CN110612645A - 半导体封装件 - Google Patents

半导体封装件 Download PDF

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CN110612645A
CN110612645A CN201780090706.3A CN201780090706A CN110612645A CN 110612645 A CN110612645 A CN 110612645A CN 201780090706 A CN201780090706 A CN 201780090706A CN 110612645 A CN110612645 A CN 110612645A
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frequency signal
signal line
semiconductor package
power supply
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CN110612645B (zh
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高木和久
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Mitsubishi Corp
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Abstract

在管座(1)安装有多波长集成元件(5)，该多波长集成元件(5)具有多个半导体激光器(6)以及分别对多个半导体激光器(6)的输出光进行调制的多个调制器(7)。多个引线(10)贯穿管座(1)，分别与多个半导体激光器(6)以及多个调制器(7)连接。各引线(10)是多个层以同心圆状重叠的同轴线路。同轴线路具有：高频信号线(12)，其向调制器(7)传输高频信号；GND线(14)；以及供电线(16)，其向半导体激光器(6)供给直流电流。高频信号线(12)配置在同轴线路的中央。GND线(14)以及供电线(16)配置在高频信号线(12)的外侧。

Description

半导体封装件
技术领域
本发明涉及半导体封装件。
背景技术
就单片集成化半导体元件而言，在n型InP衬底之上集成有波长彼此不同的4个分布反馈型半导体激光器和4个电场吸收型光调制器。来自各调制器的光输出经由弯曲波导通路而被MMI(Multi Mode Interferometer)合波器合波，从单一波导通路的端面输出。在激光器的背后集成有波导通路型的监视PD。
这样，通过集成多个功能元件，从而与现有的排列了4个单通道元件的构造相比，能够小型化。另外，能够削减光合波器等光学部件的数量。因此，制造工序中的光轴调整变得简单，能够廉价地提供产品。
以往的多波长集成EML(Electro-absorption Modulated Laser diode)搭载于箱型封装件，与单通道EML封装件相比，是大型的(例如，参照非专利文献1)。因此，存在不能得到集成了多个波长的EML而成的单片元件的小型化的优点这样的问题。另一方面，就单通道用EML而言，正在推进从箱形向尺寸小的CAN封装件的过渡(例如，专利文献1)。
专利文献1：日本专利第5188675号公报
非专利文献1：“NTT技術ジャーナル”2012-10p53
发明内容
在将多波长EML元件安装于CAN封装件的情况下，为了在串扰小的状态下向多个EML供给高频信号，无法对各调制器使用单一的引线管脚。为了向多个EML供给DC电压/电流，除了当前的LD电流源、针对监视PD的电压源、针对帕尔贴元件的电流源的3根引线以外，还需要对应于集成量的LD电流源、针对监视PD的电压源用引线管脚。因此，CAN封装件因管脚数量的增加而大型化，因此存在难以小型化这样的问题。
本发明就是为了解决上述这样的课题而提出的，其目的在于得到一种能够在串扰小的状态下向多个调制器供给高频信号、能够抑制引线管脚数的增加的半导体封装件。
本发明涉及的半导体封装件的特征在于，具备：管座；多波长集成元件，其安装于所述管座，该多波长集成元件具有多个半导体激光器以及分别对所述多个半导体激光器的输出光进行调制的多个调制器；以及多个引线，它们贯穿所述管座，分别与所述多个半导体激光器和所述多个调制器连接，各引线是多个层以同心圆状重叠的同轴线路，所述同轴线路具有：高频信号线，其向所述调制器传输高频信号；GND线；以及供电线，其向所述半导体激光器供给直流电流，所述高频信号线配置在所述同轴线路的中央，所述GND线以及所述供电线配置在所述高频信号线的外侧。
发明的效果
在本发明中，各引线是多个层以同心圆状重叠的同轴线路。由此，不需要针对信号线、GND线、供电线各自设置单独的引线管脚，因此能够抑制管脚数量的增加。另外，高频信号线配置在同轴线路的中央，GND线配置在高频信号线的外侧。由此，高频信号线被GND线屏蔽，因此能够以串扰小的状态向多个调制器供给高频信号。
附图说明
图1是表示本发明的实施方式1涉及的半导体封装件的侧视图。
图2是表示本发明的实施方式1涉及的半导体封装件的俯视图。
图3是表示本发明的实施方式1涉及的引线的横截面图。
图4是表示本发明的实施方式1涉及的引线的纵截面图。
图5是表示本发明的实施方式2涉及的半导体封装件的侧视图。
图6是表示本发明的实施方式2涉及的半导体封装件的俯视图。
图7是表示本发明的实施方式2涉及的引线的横截面图。
图8是表示本发明的实施方式2涉及的引线的纵截面图。
具体实施方式
参照附图，对本发明的实施方式涉及的半导体封装件进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体封装件的侧视图。图2是表示本发明的实施方式1涉及的半导体封装件的俯视图。该半导体封装件是安装了100Gb/s的CWDM传输用光源等所使用的多波长集成EML的TO-CAN封装件。
在圆形平板的管座主体1之上设置有帕尔贴元件2。在帕尔贴元件2之上设置有载体搭载部3。在载体搭载部3搭载有载体4。
在载体4安装有多波长集成元件5。帕尔贴元件2控制多波长集成元件5的温度。多波长集成元件5具有：4个半导体激光器6；4个调制器7，它们分别对4个半导体激光器6的输出光进行调制；合波器8，其将4个调制器7的输出光进行合波；以及4个监视光电二极管9，它们分别监视4个半导体激光器6。4根引线10贯穿管座主体1，分别与4个半导体激光器6、调制器7以及监视光电二极管9进行导线连接。调制器7与终端电阻11连接。
图3是表示本发明的实施方式1涉及的引线的横截面图。图4是表示本发明的实施方式1涉及的引线的纵截面图。各引线10是多个层以同心圆状重叠的同轴线路。作为同轴线路，从中央向外侧依次配置有高频信号线12、绝缘体13、GND线14、绝缘体15、供电线16、绝缘体17、供电线18以及绝缘体19。
高频信号线12向调制器7传输高频信号。供电线16向半导体激光器6供给直流电流。供电线18向监视光电二极管9供给直流电流。高频信号线12配置在同轴线路的中央。GND线14以及供电线16、18配置在高频信号线12的外侧。DC的GND线14以及供电线16、18以任何顺序配置均可。
为了将同轴线路的阻抗设为期望值，需要适当地选择绝缘体13的介电常数，但绝缘体15、17以及19的介电常数不受限制。但是，为了使高频信号不叠加至DC的GND线14以及供电线16、18，优选绝缘体15、17、19为高介电常数。
例如，需要对高频信号线12的直径d、绝缘体13的外周直径D、相对介电常数ε的值进行设计，以使得高频信号线12的阻抗为50Ω。同轴线路的阻抗Z近似地表示为Z＝138/√ε*log10(D/d)。例如，如果d为100μm、D为500μm，则绝缘体13的相对介电常数需要为3.7。在这种情况下，使用相对介电常数为3.9的SiO2、相对介电常数为3.8的氧化铝等作为绝缘体13。另外，d、D、ε的值及绝缘体13的材料的选定是设计事项，并不限定本发明的范围。
如上所述，在本实施方式中，各引线10是多个层以同心圆状重叠的同轴线路。由此，不需要针对信号线、GND线、供电线各自设置单独的引线管脚，所以能够抑制引线管脚数量的增加。另外，高频信号线12配置在同轴线路的中央，GND线14配置在高频信号线12的外侧。由此，高频信号线12被GND线14屏蔽，因此能够以串扰小的状态向多个调制器7供给高频信号。
另外，将高频信号线12、GND线14以及供电线16、18彼此绝缘的绝缘体13、15、17是聚乙烯等可塑性材料。由此，各引线10容易进行弯曲等操作。另外，同轴线路的与管座主体1接合的部分的绝缘体19是绝缘玻璃。由此，向管座主体1连接了CAN的情况下的气密性不会产生问题。
另外，也可以使同轴线路的除了高频信号线12以外的导体是以螺旋状对宽度小于或等于1mm的金属板进行卷绕而成。由此，同轴引线的柔性增加，弯曲等操作变得容易。
实施方式2.
图5是表示本发明的实施方式2涉及的半导体封装件的侧视图。图6是表示本发明的实施方式2涉及的半导体封装件的俯视图。图7是表示本发明的实施方式2涉及的引线的横截面图。图8是表示本发明的实施方式2涉及的引线的纵截面图。
作为各引线10的同轴线路，从中央向外侧依次配置有高频信号线12、绝缘体13、供电线16、绝缘体17、供电线18、绝缘体15以及GND线14。其它结构与实施方式1相同，得到与实施方式1相同的效果。DC的供电线16、18以任何顺序配置均可。
在本实施方式中，GND线14配置在同轴线路的最外周。由于管座主体1也是GND，所以不需要在引线10和管座主体1之间夹设绝缘膜，CAN封装件的气密性提高。
此外，在实施方式1、2中集成了4个波长的EML元件，但只要集成大于或等于2个EML元件即可，无论集成的元件数量如何，均得到与实施方式1、2相同的效果。
标号的说明
1管座，5多波长集成元件，6半导体激光器，7调制器，9监视光电二极管，10引线，12高频信号线，13、15、17、19绝缘体，14GND线，16、18供电线。

Claims (5)

1.一种半导体封装件，其特征在于，具备：
管座；
多波长集成元件，其安装于所述管座，该多波长集成元件具有多个半导体激光器以及分别对所述多个半导体激光器的输出光进行调制的多个调制器；以及
多个引线，它们贯穿所述管座，分别与所述多个半导体激光器和所述多个调制器连接，
各引线是多个层以同心圆状重叠的同轴线路，
所述同轴线路具有：高频信号线，其向所述调制器传输高频信号；GND线；以及供电线，其向所述半导体激光器供给直流电流，
所述高频信号线配置在所述同轴线路的中央，
所述GND线以及所述供电线配置在所述高频信号线的外侧。
2.根据权利要求1所述的半导体封装件，其特征在于，
所述同轴线路还具有：可塑性材料，其将所述高频信号线、所述GND线以及所述供电线彼此绝缘；以及绝缘玻璃，其与所述管座接合。
3.根据权利要求1所述的半导体封装件，其特征在于，
所述GND线配置在所述同轴线路的最外周。
4.根据权利要求1至3中任一项所述的半导体封装件，其特征在于，
还具备监视所述半导体激光器的监视光电二极管，
所述同轴线路还具有配置在所述高频信号线的外侧，向所述监视光电二极管供给直流电流的供电线。
5.根据权利要求1至4中任一项所述的半导体封装件，其特征在于，
所述同轴线路的除了所述高频信号线之外的导体是将金属板以螺旋状卷绕而成的。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108390255A (zh) * 2018-02-22 2018-08-10 青岛海信宽带多媒体技术有限公司 光学次模块及光模块
US20220344895A1 (en) * 2019-12-04 2022-10-27 Mitsubishi Electric Corporation Optical transmission module
JP7350646B2 (ja) * 2019-12-17 2023-09-26 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10224140A (ja) * 1997-02-04 1998-08-21 Nec Corp 筒状放射素子アンテナ
CN1313661A (zh) * 2000-03-14 2001-09-19 夏普公司 半导体激光器以及引线接合方法
CN1834662A (zh) * 2005-03-14 2006-09-20 中国科学院半导体研究所 测量光电子器件to封装座高频参数用的测试夹具
CN1890571A (zh) * 2003-10-14 2007-01-03 勒德洛有限合伙人公司 具有包括电元件的插针的电缆接头
CN101017956A (zh) * 2006-02-08 2007-08-15 中国科学院微电子研究所 高速率半导体光发射组件的封装结构及方法
CN101071808A (zh) * 2006-04-19 2007-11-14 日本光进株式会社 半导体元件安装基板和光发送模块
CN101290382A (zh) * 2008-06-06 2008-10-22 北京北邮国安宽带网络技术有限公司 同轴激光器转蝶形激光器的匹配方法
CN201887326U (zh) * 2010-04-22 2011-06-29 孙立健 可实现同轴封装的半导体激光器
CN102593712A (zh) * 2010-12-28 2012-07-18 三菱电机株式会社 非冷却光半导体装置
CN103119661A (zh) * 2010-09-23 2013-05-22 3M创新有限公司 屏蔽电缆
CN103210571A (zh) * 2010-11-02 2013-07-17 三菱电机株式会社 电动式动力转向用电源模块及使用其的电动式动力转向驱动控制装置
CN103339691A (zh) * 2011-03-04 2013-10-02 株式会社润工社 传输电缆
CN104303380A (zh) * 2012-05-01 2015-01-21 三菱电机株式会社 半导体封装件
CN106526763A (zh) * 2016-07-12 2017-03-22 深圳大学 一种同轴封装光通信器件
CN106662764A (zh) * 2014-08-29 2017-05-10 住友大阪水泥股份有限公司 光调制器及光开关

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229636A (ja) * 2002-02-06 2003-08-15 Hitachi Ltd 半導体レーザ素子及び半導体レーザ装置
US7254149B2 (en) * 2002-03-19 2007-08-07 Finisar Corporation Submount, pedestal, and bond wire assembly for a transistor outline package with reduced bond wire inductance
JP4550386B2 (ja) * 2003-03-27 2010-09-22 三菱電機株式会社 光半導体素子用パッケージ
JP5188675B2 (ja) 2005-09-28 2013-04-24 ヒーハイスト精工株式会社 球面軸受
JP2007115771A (ja) * 2005-10-18 2007-05-10 Nec System Technologies Ltd Ｌｓｉピン
JP5180176B2 (ja) 2009-11-19 2013-04-10 日本電信電話株式会社 Ｔｏ−ｃａｎ型ｔｏｓａモジュール
JP5134033B2 (ja) * 2010-03-30 2013-01-30 日本電信電話株式会社 半導体光集積素子
JP5248693B1 (ja) * 2012-03-26 2013-07-31 株式会社東芝 同軸ケーブル、同軸ケーブルの作成方法
JP2012209583A (ja) * 2012-07-12 2012-10-25 Japan Oclaro Inc レーザ素子及び光送信モジュール
JP6068210B2 (ja) * 2013-03-14 2017-01-25 日本電信電話株式会社 多チャネルレーザアレイ光源
KR101980288B1 (ko) * 2013-05-06 2019-05-20 한국전자통신연구원 고주파 광 모듈 및 이를 구비한 광 통신 장치
JP2015088641A (ja) * 2013-10-31 2015-05-07 三菱電機株式会社 光モジュール
DE102015216470A1 (de) * 2015-08-28 2017-03-02 Leoni Kabel Holding Gmbh Kabel, insbesondere Datenübertragungskabel, Ader und Verfahren zur Herstellung einer solchen Ader

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10224140A (ja) * 1997-02-04 1998-08-21 Nec Corp 筒状放射素子アンテナ
CN1313661A (zh) * 2000-03-14 2001-09-19 夏普公司 半导体激光器以及引线接合方法
CN1890571A (zh) * 2003-10-14 2007-01-03 勒德洛有限合伙人公司 具有包括电元件的插针的电缆接头
CN1834662A (zh) * 2005-03-14 2006-09-20 中国科学院半导体研究所 测量光电子器件to封装座高频参数用的测试夹具
CN101017956A (zh) * 2006-02-08 2007-08-15 中国科学院微电子研究所 高速率半导体光发射组件的封装结构及方法
CN101071808A (zh) * 2006-04-19 2007-11-14 日本光进株式会社 半导体元件安装基板和光发送模块
CN101290382A (zh) * 2008-06-06 2008-10-22 北京北邮国安宽带网络技术有限公司 同轴激光器转蝶形激光器的匹配方法
CN201887326U (zh) * 2010-04-22 2011-06-29 孙立健 可实现同轴封装的半导体激光器
CN103119661A (zh) * 2010-09-23 2013-05-22 3M创新有限公司 屏蔽电缆
CN103210571A (zh) * 2010-11-02 2013-07-17 三菱电机株式会社 电动式动力转向用电源模块及使用其的电动式动力转向驱动控制装置
CN102593712A (zh) * 2010-12-28 2012-07-18 三菱电机株式会社 非冷却光半导体装置
CN103339691A (zh) * 2011-03-04 2013-10-02 株式会社润工社 传输电缆
CN104303380A (zh) * 2012-05-01 2015-01-21 三菱电机株式会社 半导体封装件
CN106662764A (zh) * 2014-08-29 2017-05-10 住友大阪水泥股份有限公司 光调制器及光开关
CN106526763A (zh) * 2016-07-12 2017-03-22 深圳大学 一种同轴封装光通信器件

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