JP7339807B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP7339807B2 JP7339807B2 JP2019144889A JP2019144889A JP7339807B2 JP 7339807 B2 JP7339807 B2 JP 7339807B2 JP 2019144889 A JP2019144889 A JP 2019144889A JP 2019144889 A JP2019144889 A JP 2019144889A JP 7339807 B2 JP7339807 B2 JP 7339807B2
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
図1は、第1の実施形態に係る半導体発光装置の平面図である。図2は、図1に示す半導体発光装置のII-II線断面図である。第1の実施形態の半導体発光装置は、差動駆動型である。半導体発光装置100は、窒化アルミニウムなどの絶縁材料の基板10上に、第1高周波線路12、第2高周波線路14及び直流線路16を有する。第2高周波線路14上には、変調器集積レーザ18が搭載されている。
図9は、第2の実施形態に係る半導体発光装置の平面図である。図10は、図9に示す半導体発光装置のX-X線断面図である。第2の実施形態は、基板210に絶縁性ブロック202が搭載されている点で第1の実施形態と異なる。絶縁性ブロック202は、チップインダクタ262と基板210の間に介在する。レーザ部224へ直流電流を印加するための直流線路216は、絶縁性ブロック202の、基板210とは反対の表面に設けられている。直流線路216は、絶縁性ブロック202とチップインダクタ262の間に介在する。また、絶縁性ブロック202は、直流線路216の少なくとも一部がチップインダクタ262の第2端子268の直下に位置するように配置されている。
図11は、第3の実施形態に係る半導体発光装置の平面図である。図12は、図11に示す半導体発光装置のXII-XII線断面図である。第3の実施形態は、チップキャパシタ354の直下に導電性ブロック304が配置されている点で、第2の実施形態と異なる。導電性ブロック304は、チップキャパシタ354と電気配線群344(第2高周波線路314)の間に介在する。導電性ブロック304の大きさは、第2高周波線路314の幅を超えない大きさに設計されている。また、図12に示すように、絶縁性ブロック302の厚さは、導電性ブロック304とチップキャパシタ354の双方の厚さに合わせて、チップインダクタ362が基板310の搭載面に対して傾かないように、調整されている。つまり、導電性ブロック304の厚さを調整することで、絶縁性ブロック302の厚さを任意に調整可能である。従って、第2の実施形態より絶縁性ブロック302を厚くすることが可能である。このため、第2端子368と裏面電極308間の実効的な距離を第2の実施形態よりも更に大きくでき、両者間の電位差に起因する寄生容量を更に低減できる。その他の内容は、第2の実施形態で説明した内容が該当する。
図13は、第4の実施形態に係る半導体発光装置の平明図である。また、図14は、に示す半導体発光装置のXIV-XIV線断面図である。本実施形態の半導体発光装置は、シングルエンド駆動型である。
図16は、第5の実施形態に係る半導体発光装置の平面図である。図17は、図16に示す半導体発光装置のXVII-XVII線断面図である。第5の実施形態は、基板510上には絶縁性ブロック502が搭載されている点で、第4の実施形態と異なる。絶縁性ブロック502は、チップインダクタ562と基板510の間に介在する。
図18は、第6の実施形態に係る半導体発光装置の平面図である。図19は、図18に示す半導体発光装置のXIX-XIX線断面図である。第6の実施形態は、チップキャパシタ654の直下に導電性ブロック604が配置されている点で、第5の実施形態と異なる。導電性ブロック604は、チップキャパシタ654と電気配線群644の間に介在する。
図20は、第7の実施形態に係る半導体発光装置の平面図である。図21は、図20に示す半導体発光装置のXXI-XXI線断面図である。第7の実施形態は、第2高周波線路714上の変調器集積レーザ718の後方に、2つのチップキャパシタ754A,754Bが搭載されている点で、第1の実施形態とは異なる。
図22は、第8の実施形態に係る半導体発光装置の平面図である。第8の実施形態は、基板810上に絶縁性ブロック802が搭載されている点で、第7の実施形態と異なる。絶縁性ブロック802は、チップインダクタ862と基板810の間に介在する。
図23は、第9の実施形態に係る半導体発光装置の平面図である。図24は、図23に示す半導体発光装置のXXIV-XXIV線断面図である。第9の実施形態は、複数のチップキャパシタ954A,954Bの一方の直下に導電性ブロック904が配置されている点で、第8の実施形態と異なる。導電性ブロック904は、チップキャパシタ954Bと電気配線群944の間に介在する。
Claims (9)
- 光を発するためのレーザと、
前記光を電界吸収効果によって変調するための変調器と、
前記レーザと電気的に並列接続されたチップキャパシタと、
前記チップキャパシタに電気的に直列接続され、前記レーザに電気的に直列接続され、第1端子及び第2端子を有するチップインダクタと、
前記チップインダクタの前記第1端子及び前記チップキャパシタの上電極を直接的に接合する半田又は導電性接着剤と、
前記レーザ、前記変調器、前記チップキャパシタ及び前記チップインダクタが電気的に接続される電気配線群と、
絶縁性ブロックと、
前記レーザ、前記変調器、前記チップキャパシタ、前記絶縁性ブロック及び前記チップインダクタが搭載された基板と、
を有し、
前記絶縁性ブロックは、前記チップインダクタと前記基板の間に介在し、
前記電気配線群は、前記変調器に高周波信号を印加するための、前記基板に搭載された第1高周波線路及び第2高周波線路を含み、
前記電気配線群は、前記レーザへ電流を注入するための直流線路を含み、
前記レーザ及び前記変調器並びに前記チップキャパシタの下電極は、前記第2高周波線路に、電気的に接続されるように搭載され、
前記チップインダクタの前記第2端子は、前記直流線路に接続されていることを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記第1高周波線路と前記第2高周波線路には、差動信号が伝達されるようになっていることを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記第2高周波線路は、接地電位になることを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記直流線路は、前記絶縁性ブロックと前記チップインダクタの間に介在して、前記第2端子に直接的に接続されていることを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記チップキャパシタと前記第2高周波線路の間に介在する導電性ブロックをさらに有することを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記上電極と前記レーザの一方電極を接続するワイヤをさらに有することを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置であって、
前記チップキャパシタは、電気的に並列接続された複数のチップキャパシタを含み、
前記チップインダクタの前記第1端子は、前記半田又は前記導電性接着剤によって、前記複数のチップキャパシタの1つに直接的に接合されていることを特徴とする半導体発光装置。 - 請求項7に記載の半導体発光装置であって、
前記複数のチップキャパシタの隣り合う一対を前記上電極で電気的に接続するワイヤをさらに有することを特徴とする半導体発光装置。 - 請求項8に記載の半導体発光装置であって、
前記チップインダクタの前記第1端子は、前記複数のチップキャパシタの前記1つが有する前記上電極に接合されていることを特徴とする半導体発光装置。
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