CN1307719C - 半导体设备及其制造方法 - Google Patents
半导体设备及其制造方法 Download PDFInfo
- Publication number
- CN1307719C CN1307719C CNB011251395A CN01125139A CN1307719C CN 1307719 C CN1307719 C CN 1307719C CN B011251395 A CNB011251395 A CN B011251395A CN 01125139 A CN01125139 A CN 01125139A CN 1307719 C CN1307719 C CN 1307719C
- Authority
- CN
- China
- Prior art keywords
- thin film
- resistance
- semiconductor device
- conductor
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims abstract description 155
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 106
- 229920005591 polysilicon Polymers 0.000 claims abstract description 106
- 239000010409 thin film Substances 0.000 claims abstract description 72
- 239000012535 impurity Substances 0.000 claims abstract description 53
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 229910018594 Si-Cu Inorganic materials 0.000 description 3
- 229910008465 Si—Cu Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP260803/2000 | 2000-08-30 | ||
JP260803/00 | 2000-08-30 | ||
JP2000260803A JP2002076281A (ja) | 2000-08-30 | 2000-08-30 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1340829A CN1340829A (zh) | 2002-03-20 |
CN1307719C true CN1307719C (zh) | 2007-03-28 |
Family
ID=18748757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011251395A Expired - Lifetime CN1307719C (zh) | 2000-08-30 | 2001-08-30 | 半导体设备及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6844599B2 (zh) |
JP (1) | JP2002076281A (zh) |
KR (2) | KR20020018148A (zh) |
CN (1) | CN1307719C (zh) |
TW (1) | TW516045B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6532568B1 (en) * | 2000-10-30 | 2003-03-11 | Delphi Technologies, Inc. | Apparatus and method for conditioning polysilicon circuit elements |
US7408218B2 (en) * | 2001-12-14 | 2008-08-05 | Renesas Technology Corporation | Semiconductor device having plural dram memory cells and a logic circuit |
CN100365786C (zh) * | 2002-12-31 | 2008-01-30 | 上海贝岭股份有限公司 | 双极集成电路中硅材料质量的检测方法 |
JP4609985B2 (ja) * | 2004-06-30 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 半導体チップおよびその製造方法ならびに半導体装置 |
US7253074B2 (en) * | 2004-11-05 | 2007-08-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Temperature-compensated resistor and fabrication method therefor |
JP4880939B2 (ja) | 2005-07-29 | 2012-02-22 | セイコーインスツル株式会社 | 半導体装置 |
JP5089194B2 (ja) * | 2007-02-26 | 2012-12-05 | セイコーインスツル株式会社 | 半導体装置及びその製造方法 |
JP4458129B2 (ja) * | 2007-08-09 | 2010-04-28 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP5008543B2 (ja) | 2007-12-18 | 2012-08-22 | セイコーインスツル株式会社 | 半導体装置 |
JP2009266868A (ja) * | 2008-04-22 | 2009-11-12 | Oki Semiconductor Co Ltd | Mosfetおよびmosfetの製造方法 |
US8159040B2 (en) * | 2008-05-13 | 2012-04-17 | International Business Machines Corporation | Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor |
JP2010182954A (ja) | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | 半導体装置 |
DE102010016556A1 (de) * | 2009-04-24 | 2010-11-25 | Intersil Americas Inc., Milpitas | Widerstands-Feineinstellung für Polysilizium |
JP5029654B2 (ja) * | 2009-05-27 | 2012-09-19 | 株式会社デンソー | 電子制御装置 |
JP2012174999A (ja) * | 2011-02-23 | 2012-09-10 | Asahi Kasei Electronics Co Ltd | 半導体装置及びその製造方法 |
DE102011100779B4 (de) * | 2011-05-06 | 2022-10-06 | Texas Instruments Deutschland Gmbh | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
JP2013122947A (ja) * | 2011-12-09 | 2013-06-20 | Seiko Instruments Inc | 半導体装置の製造方法 |
KR20130139103A (ko) * | 2012-06-12 | 2013-12-20 | 페어차일드코리아반도체 주식회사 | 저항 소자 및 그 제조 방법 |
JP6073705B2 (ja) * | 2013-02-26 | 2017-02-01 | エスアイアイ・セミコンダクタ株式会社 | ヒューズ回路及び半導体集積回路装置 |
US9252292B2 (en) * | 2013-09-16 | 2016-02-02 | Infineon Technologies Ag | Semiconductor device and a method for forming a semiconductor device |
US9553139B2 (en) * | 2015-01-30 | 2017-01-24 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US10643990B2 (en) * | 2018-02-28 | 2020-05-05 | Globalfoundries Singapore Pte. Ltd. | Ultra-high voltage resistor |
EP3598505B1 (en) * | 2018-07-19 | 2023-02-15 | Mitsubishi Electric R&D Centre Europe B.V. | Temperature estimation of a power semiconductor device |
CN110767711B (zh) * | 2019-02-28 | 2022-05-06 | 云谷(固安)科技有限公司 | Oled阵列基板、显示面板及显示装置 |
JP7361567B2 (ja) * | 2019-10-25 | 2023-10-16 | ローム株式会社 | 電子部品 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1125899A (zh) * | 1994-08-19 | 1996-07-03 | 精工电子工业株式会社 | 半导体集成电路 |
JPH09321229A (ja) * | 1995-08-24 | 1997-12-12 | Seiko Instr Inc | 半導体装置およびその製造方法 |
JP2000021896A (ja) * | 1998-07-03 | 2000-01-21 | Sony Corp | 半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04258175A (ja) * | 1991-02-12 | 1992-09-14 | Mitsubishi Electric Corp | シリコン半導体加速度センサの製造方法 |
KR940008374B1 (ko) * | 1991-09-03 | 1994-09-12 | 금성일렉트론 주식회사 | 반도체 소자의 금속배선 방법 |
CA2093111C (en) * | 1993-03-31 | 1997-03-18 | Thomas W. Macelwee | High value resistive load for an integrated circuit |
JP2581411B2 (ja) * | 1993-09-14 | 1997-02-12 | 日本電気株式会社 | 半導体記憶回路装置及びその製造方法 |
US5489547A (en) * | 1994-05-23 | 1996-02-06 | Texas Instruments Incorporated | Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient |
JP3279453B2 (ja) * | 1995-03-20 | 2002-04-30 | シャープ株式会社 | 不揮発性ランダムアクセスメモリ |
DE19531629C1 (de) * | 1995-08-28 | 1997-01-09 | Siemens Ag | Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur |
JP3000524B2 (ja) * | 1998-01-30 | 2000-01-17 | セイコーインスツルメンツ株式会社 | 半導体装置の製造方法 |
US6372585B1 (en) * | 1998-09-25 | 2002-04-16 | Texas Instruments Incorporated | Semiconductor device method |
-
2000
- 2000-08-30 JP JP2000260803A patent/JP2002076281A/ja not_active Withdrawn
-
2001
- 2001-07-04 TW TW090116387A patent/TW516045B/zh not_active IP Right Cessation
- 2001-07-27 US US09/916,527 patent/US6844599B2/en not_active Expired - Lifetime
- 2001-08-30 CN CNB011251395A patent/CN1307719C/zh not_active Expired - Lifetime
- 2001-08-30 KR KR1020010052888A patent/KR20020018148A/ko active Search and Examination
-
2004
- 2004-12-03 US US11/004,786 patent/US20050106830A1/en not_active Abandoned
-
2008
- 2008-10-09 KR KR1020080099123A patent/KR100878924B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1125899A (zh) * | 1994-08-19 | 1996-07-03 | 精工电子工业株式会社 | 半导体集成电路 |
JPH09321229A (ja) * | 1995-08-24 | 1997-12-12 | Seiko Instr Inc | 半導体装置およびその製造方法 |
JP2000021896A (ja) * | 1998-07-03 | 2000-01-21 | Sony Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20020018148A (ko) | 2002-03-07 |
US20020047183A1 (en) | 2002-04-25 |
US6844599B2 (en) | 2005-01-18 |
CN1340829A (zh) | 2002-03-20 |
US20050106830A1 (en) | 2005-05-19 |
JP2002076281A (ja) | 2002-03-15 |
TW516045B (en) | 2003-01-01 |
KR100878924B1 (ko) | 2009-01-15 |
KR20080095227A (ko) | 2008-10-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160307 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20070328 |