CN1306600C - 压装功率半导体模块 - Google Patents
压装功率半导体模块 Download PDFInfo
- Publication number
- CN1306600C CN1306600C CNB03822870XA CN03822870A CN1306600C CN 1306600 C CN1306600 C CN 1306600C CN B03822870X A CNB03822870X A CN B03822870XA CN 03822870 A CN03822870 A CN 03822870A CN 1306600 C CN1306600 C CN 1306600C
- Authority
- CN
- China
- Prior art keywords
- module
- top board
- metal
- semi
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- 239000000835 fiber Substances 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000011156 metal matrix composite Substances 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000374 eutectic mixture Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- ZBZHVBPVQIHFJN-UHFFFAOYSA-N trimethylalumane Chemical compound C[Al](C)C.C[Al](C)C ZBZHVBPVQIHFJN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01012—Magnesium [Mg]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20020405836 EP1403923A1 (en) | 2002-09-27 | 2002-09-27 | Press pack power semiconductor module |
EP02405836.4 | 2002-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685499A CN1685499A (zh) | 2005-10-19 |
CN1306600C true CN1306600C (zh) | 2007-03-21 |
Family
ID=31970515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03822870XA Expired - Lifetime CN1306600C (zh) | 2002-09-27 | 2003-09-29 | 压装功率半导体模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7538436B2 (zh) |
EP (2) | EP1403923A1 (zh) |
JP (1) | JP2006500774A (zh) |
CN (1) | CN1306600C (zh) |
AU (1) | AU2003264223A1 (zh) |
WO (1) | WO2004030093A1 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005050534B4 (de) * | 2005-10-21 | 2008-08-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
JP2008066379A (ja) * | 2006-09-05 | 2008-03-21 | Sumitomo Electric Ind Ltd | 複合材料 |
FR2951047B1 (fr) * | 2009-10-07 | 2011-12-09 | Valeo Etudes Electroniques | Module d'electronique de puissance et de procede de fabrication de ce module |
EP2330740B1 (en) * | 2009-12-03 | 2016-05-25 | ABB Technology AG | System and method for controlling at least two power semiconductors connected in parallel |
EP2622705B1 (en) | 2010-09-30 | 2015-11-04 | ABB Research Ltd. | Coordinated control of multi-terminal hvdc systems |
DE102010062556A1 (de) * | 2010-12-07 | 2012-06-14 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterschaltungsanordnung |
DE102011002458A1 (de) | 2011-01-05 | 2012-07-05 | Robert Bosch Gmbh | Elektronische Baugruppe mit verbessertem Thermo-Management |
EP2528092A1 (en) | 2011-05-27 | 2012-11-28 | ABB Research Ltd. | Semiconductor device |
CN103370786B (zh) * | 2011-02-08 | 2016-09-14 | Abb研究有限公司 | 功率半导体模块 |
EP2503595A1 (en) * | 2011-02-18 | 2012-09-26 | ABB Research Ltd. | Power semiconductor module and method of manufacturing a power semiconductor module |
US20140055888A1 (en) | 2011-05-10 | 2014-02-27 | Abb Research Ltd | Power module and method of operating a power module |
EP2560203A1 (en) * | 2011-08-17 | 2013-02-20 | ABB Technology AG | Power semiconductor arrangement |
WO2013057172A1 (en) * | 2011-10-21 | 2013-04-25 | Abb Technology Ag | Power semiconducter module and power semiconductor module assembly with multiple power semiconducter modules |
US9761506B2 (en) * | 2012-02-23 | 2017-09-12 | Rohm Co., Ltd. | Semiconductor device and fabrication method for the same |
WO2013156078A1 (en) | 2012-04-20 | 2013-10-24 | Abb Research Ltd | Passive circuit for improved failure mode handling in power electronics modules |
US9035448B2 (en) * | 2012-06-29 | 2015-05-19 | Materion Corporation | Semiconductor packages having metal composite base plates |
EP2790217A1 (de) | 2013-04-09 | 2014-10-15 | ABB Technology AG | Leistungshalbleitermodul |
DE102013216709B4 (de) * | 2013-08-22 | 2021-03-25 | Infineon Technologies Ag | Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung |
DE102013217801B4 (de) * | 2013-09-05 | 2019-07-18 | Infineon Technologies Ag | Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung |
DE102013217802B4 (de) * | 2013-09-05 | 2020-01-09 | Infineon Technologies Ag | Halbleiteranordnung, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung |
US10103085B2 (en) | 2014-07-01 | 2018-10-16 | Siemens Aktiengesellschaft | Clamping assembly having a pressure element |
CN105336723B (zh) | 2014-07-28 | 2018-09-14 | 通用电气公司 | 半导体模块、半导体模块组件及半导体装置 |
CN106575591B (zh) * | 2014-08-06 | 2019-12-06 | 西门子公司 | 具有金属泡沫材料的电气保险装置和用于通过电气保险装置中断电流的方法 |
DE102014115909B4 (de) * | 2014-10-31 | 2017-06-01 | Infineon Technologies Ag | Press-Pack-Zelle und Verfahren zum Betrieb einer Press-Pack-Zelle |
WO2016074727A1 (de) | 2014-11-13 | 2016-05-19 | Siemens Aktiengesellschaft | Spannverband sowie ein submodul für einen umrichter mit dem spannverband |
JP6407422B2 (ja) * | 2015-05-26 | 2018-10-17 | 三菱電機株式会社 | 圧接型半導体装置 |
JP6696576B2 (ja) | 2016-09-07 | 2020-05-20 | 三菱電機株式会社 | 半導体装置 |
EP3513432B1 (en) | 2016-09-15 | 2021-04-07 | RISE Research Institutes of Sweden AB | Press-pack power module |
EP3352213B1 (en) * | 2017-01-23 | 2021-10-06 | ABB Power Grids Switzerland AG | Semiconductor power module comprising graphene |
CN106876357A (zh) * | 2017-01-24 | 2017-06-20 | 东莞市阿甘半导体有限公司 | 用于芯片封装的电极以及使用该电极的芯片封装结构 |
CN106783787A (zh) * | 2017-01-24 | 2017-05-31 | 东莞市阿甘半导体有限公司 | 用于芯片封装的电极以及使用该电极的芯片封装结构 |
EP3566246B1 (en) * | 2017-02-01 | 2020-11-18 | ABB Power Grids Switzerland AG | Power semiconductor module with short circuit failure mode |
CN113369872A (zh) * | 2021-07-20 | 2021-09-10 | 安徽富信半导体科技有限公司 | 一种半导体元件装配用压装装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196442A (en) * | 1977-06-03 | 1980-04-01 | Hitachi, Ltd. | Semiconductor device |
JPH0415985A (ja) * | 1990-05-09 | 1992-01-21 | Mitsubishi Heavy Ind Ltd | ハイブリットic用ベース基板 |
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CN2403178Y (zh) * | 2000-01-21 | 2000-10-25 | 北京市科通电子继电器总厂 | 大功率交流固体继电器 |
JP2000303155A (ja) * | 1999-04-20 | 2000-10-31 | Furukawa Electric Co Ltd:The | 炭素繊維を分散したアルミニウム基複合材料 |
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- 2002-09-27 EP EP20020405836 patent/EP1403923A1/en not_active Withdrawn
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2003
- 2003-09-29 JP JP2004538637A patent/JP2006500774A/ja active Pending
- 2003-09-29 US US10/527,993 patent/US7538436B2/en not_active Expired - Lifetime
- 2003-09-29 EP EP03798031A patent/EP1543555A1/en not_active Withdrawn
- 2003-09-29 WO PCT/CH2003/000646 patent/WO2004030093A1/en active Application Filing
- 2003-09-29 CN CNB03822870XA patent/CN1306600C/zh not_active Expired - Lifetime
- 2003-09-29 AU AU2003264223A patent/AU2003264223A1/en not_active Abandoned
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US4196442A (en) * | 1977-06-03 | 1980-04-01 | Hitachi, Ltd. | Semiconductor device |
JPH0415985A (ja) * | 1990-05-09 | 1992-01-21 | Mitsubishi Heavy Ind Ltd | ハイブリットic用ベース基板 |
US5437921A (en) * | 1990-10-09 | 1995-08-01 | Mitsubishi Denki Kabushiki Kaisha | Electronic components mounting base material |
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CN2403178Y (zh) * | 2000-01-21 | 2000-10-25 | 北京市科通电子继电器总厂 | 大功率交流固体继电器 |
Also Published As
Publication number | Publication date |
---|---|
EP1403923A1 (en) | 2004-03-31 |
US20060118816A1 (en) | 2006-06-08 |
AU2003264223A1 (en) | 2004-04-19 |
EP1543555A1 (en) | 2005-06-22 |
US7538436B2 (en) | 2009-05-26 |
JP2006500774A (ja) | 2006-01-05 |
CN1685499A (zh) | 2005-10-19 |
WO2004030093A1 (en) | 2004-04-08 |
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