CN1306600C - 压装功率半导体模块 - Google Patents

压装功率半导体模块 Download PDF

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CN1306600C
CN1306600C CNB03822870XA CN03822870A CN1306600C CN 1306600 C CN1306600 C CN 1306600C CN B03822870X A CNB03822870X A CN B03822870XA CN 03822870 A CN03822870 A CN 03822870A CN 1306600 C CN1306600 C CN 1306600C
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module
top board
metal
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CN1685499A (zh
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萨蒂什·贡图里
丹尼尔·施奈德
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Hitachi Energy Ltd
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Abstract

大功率压装半导体模块(1)包括层(3，4)，其直接接触Si半导体芯片(2)的一个或两个主电极，所述层由金属基体复合材料制造，该材料的热膨胀系数可调节为接近或匹配Si的值。

Description

压装功率半导体模块
发明领域
本发明涉及功率电子技术领域。其涉及大功率压装半导体模块，具体是IGBT(绝缘栅极双极型晶体管)或晶闸管(Thyristor)模块。
技术背景
包括晶闸管或IGBT半导体器件的压装模块被用于开关应用的功率电子领域，如HVDC-转换器(高压直流转换器)。为了获得比单个器件更高的闭塞电压，在彼此之上串联堆叠压装模块。对该组堆施加压力以保证在单独的压装模块之间具有合适的电和热接触。
当该组堆的压力接触的半导体器件之一产生故障时，当电流流过时，半导体器件的Si(硅)芯片首先局部熔融，形成跨越器件整个厚度的导电通道(热点)。有故障半导体器件在理论上形成稳定的短路并且承受该组堆的全部额定电流。引入组堆的多余半导体器件承受由于故障器件失效所致的额外负载。因此，单个故障器件将不会导致整个组堆失效。故障器件将保留在组堆中，直至在常规维护工作期间进行更换。
短路失效模式(SCFM)发生在标准晶闸管压装器件中，其中大Si面积的半导体芯片被插入到Mo(钼)板之间，与封装的密封一起帮助维护相对稳定的形成短路的化合物。
然而，当压装器件未密封并且采用具有更小机械接触面积的IGBT时，由于多种因素，少量列举包括氧化、由时效所致热点合金(因而Si半导体芯片)的快速消耗、金相的不相容，导致所形成的短路不够稳定。
在US 6,426,561中介绍了一种具有进一步改进的SCFM(短路失效模式)行为的新型功率半导体模块。将由适当材料构成的金属层与Si半导体芯片的一个或两个主电极直接接触。该金属层的材料与Si形成共熔混合物。当发生故障时，整个夹层结构被加热，并且一旦达到该共熔混合物的熔点，导电熔体就开始在所述层和Si之间的接触表面上形成。随后，该熔融区展开跨越Si半导体芯片的整个厚度，形成金属性导电通道，其提供更稳定的热点，因此提供模块的更长SCFM寿命。
然而，在半导体器件中引起更高温度梯度的大功率级正常操作条件下，由于热循环以及在Si半导体芯片和接触的金属层之间热膨胀系数(CTE)的差异，引入与芯片接触的金属层引起热机械疲劳(也已知为间歇操作负载，IOL)和微振磨损(fretting)的问题。这可能导致Si半导体芯片的早期损坏。
美国专利4,196,442公开了一种半导体器件，其中半导体衬底被粘接在支撑电极的至少一个电极表面上，其为包括嵌入在导电基体中的石墨纤维的复合体。该专利公开了得自使用环状结构的纤维来获得与半导体衬底的所需CTE匹配的优点，并且由于加热至300℃膨胀所遇到的问题从而不鼓励使用2维随机排列的短纤维。此处的金属基体主要包括Cu和形成碳化物的元素，同时提到Al的合金、Ag以及它们的合金也是适用的。
发明内容
因此，本发明的目的在于提供一种新型大功率压装半导体模块，其既满足间歇操作负载又满足短路失效模式的要求，同时拥有更好的机械性能以阻止高温蠕变。通过具有独立权利要求特征的大功率压装半导体模块来达到本目标。
根据本发明，大功率压装半导体模块包括直接与Si半导体芯片一个或两个主电极接触的层，所述层由MMC(金属基复合材料)材料制成，该材料采用2维的、在接触界面平面内随机取向的短石墨纤维，其CTE可调节到接近或匹配Si的CTE的值。
当使用具有更高热导率的MMC时，由于与半导体的CTE相容性和正常操作期间降低的功率损耗，本发明模块具有增强的IOL能力。由于在热点中减少了功率损耗，因此还具有改进的SCFM性能。即使在制造或组装过程(包括加热以利于接合工艺，如焊接)期间发生板弯曲，通过使用包含Al、Ag及其合金的基体，在工作中组堆所承受的提供在包括复合材料界面之间良好接触的压力下，弯曲被展平。
由于金属基复合材料，相比于形成基体的纯金属材料，压装半导体模块还增强了机械强度和抗蠕变能力，从而提高了模块在使用中的可靠性。
为了进一步改善SCFM要求，其中组堆的全部额定电流通过由热点合金形成的短路承担，并且导致半导体模块更稳定和具有更长的工作寿命，优选使用具有易于与来自芯片的Si合金化并形成共熔体的高金属含量的金属基复合材料。
同样的复合材料(如：Al-石墨)可被用在Si半导体芯片的任一面上，由于在SCFM条件下材料的连接和接合产生输送连续电流的通路。由于在任一面上使用同样的材料，从而使形成有害金相，如具有低的热导率和电导率的金属间化合物的可能性最小化。
然而，在功率损耗低以及由此导致的金属间化合物的形成速率低的条件下，可以使用两种不同的复合材料，或者在一面上具有匹配的CTE的金属和在另一面上的复合材料的组合。
为了在Si半导体芯片和金属接触表面之间获得足够的电接触，在Si半导体芯片的任一面上的接触表面可为自由浮接或通过多种技术(焊接、用金属粉末烧结、扩散接合或导电粘合剂)接合到芯片上。
金属基复合材料底板和包括Al-石墨的顶板的制造已被证明比用于传统基底和接触板的材料更容易也更便宜。
为了改善接触性能和摩擦，Si半导体芯片的接触表面和金属基复合材料层可镀覆传统材料和涂料。
附图说明
结合附图，从以下详细描述中将更清晰地浮现出本发明地其它特征和优点，其中：
图1示意性示出具有安置在顶板和底板之间的半导体器件的根据本发明的大功率压装半导体模块，和
图2示出图1配置的半导体器件的放大图。
具体实施方案
现在参照附图，图1示出根据本发明的大功率压装半导体模块的优选示例性实施方案的截面图。在普通外壳内相互隔离且并排放置数个独立的Si半导体芯片2，如IGBT或二极管。将这些芯片并联电连接，以这种方式，大电流所需的有效半导体面积由大量独立表面组成。图1未示出用来激活半导体组件的正常接合的栅连接。
Si半导体芯片2在上表面和下表面具有金属化的主电极，其与金属的接触面形成电接触。该芯片被安装在导电底板4上并且将导电顶板3直接安置在每个芯片上方。接触活塞5正在将顶板和Si半导体芯片向底板压紧。将具有接触活塞、顶板、Si半导体芯片和底板的排列压到由电绝缘外壳元件13结合在一起的两个模块电源接头11和12之间。在两个模块电源接头之间所施加的压力要确保足够压平由于制造或加工条件所致的任何弯曲。
底板4和顶板3由金属基复合材料制造，其CTE可被调节到接近或匹配Si半导体芯片的值。
可以设计许多复合材料来满足CTE要求并且由此具有足够的IOL相容性。然而，为了具有所要求的电导率，其由于电流通道而能够获得更低的功率损耗，基质应为金属的(如Ag(银)、Al(铝)、Cu(铜)或Au(金))，同时增强材料可以为任意其它类型的材料(非金属如石墨，陶瓷如SiC；或其它金属如嵌入在金属基质中的Mo纤维或小片)。该金属基复合材料的一些例子是Al-石墨、Cu-石墨、Cu-Mo、Al-SiC和Be-BeO。导电聚合物、聚合物复合材料和陶瓷也可成为选择。然而，给定的SCFM要求，其中组堆的全部额定电流通过由热点合金形成的短路承担，金属基复合材料导致在更大功率的额定值下更长的工作时间。具有易于与来自芯片的Si形成合金的高金属含量的复合材料导致更稳定和更长的工作寿命。
对于选择用作MMC材料的Al-石墨的特定情况，将Si半导体芯片插入到包括具有含量在共熔组成范围内的Si的两块Al-石墨板之间，获得了良好的SCFM性能。Al-石墨MMC材料可商业购得，其中在浇铸期间已将Si加入，由于共熔反应从而改善熔融金属的流动性，并且还在Al-石墨铸件的情况下防止形成有害的碳化铝并促进石墨纤维的润湿。
Al基质合金的组成被设计为含有尽可能低的Si含量，而不影响浇铸性、石墨纤维的润湿性以及防止形成有害的碳化铝。商业可获得的该基质合金的实例为A356(近似组成：7％Si、0.3％Mg和余量的Al)，其可被用来制造含有石墨纤维的复合材料。相比于如美国专利6,426,561中所声称的采用Mo底基板和Al或Ag的顶板的设计，该复合材料提供了更好的SCFM性能。将基质合金中的Si含量改变到低于共熔点将进一步改善具有最低Si含量、成为最佳选择的SCFM性能。用其中基质金属能够与Si形成合金的其它复合材料，如Ag-石墨也获得了相似的结果。基质中Si含量的选择取决于Si半导体芯片的尺寸和厚度，以下简单解释在模块应用中所需的复合材料的电导率和热导率。
导致短路失效模式的主要损坏故障是单个半导体芯片中的短路，短路后全部额定电流都流经该芯片。包括半导体芯片、电极和顶和底板的夹心结构被加热直到基质合金中的金属与来自芯片的Si形成导电合金。该合金的大部分由来自复合材料基质的Al和Si以及来自芯片的Si构成。当在热点中的所得Si含量低于共熔组成时，Si被以微小形式分散，与热点合金中Si含量高的情况相比，其对电流通道提供相对更低的阻抗。对于具有高于共熔组成的Si含量的热点组成，取决于由操作期间功率损耗所致的热点中的主要温度情况，Si将沉淀为本体小片。在热点合金中的Si含量越高，对电流通道的阻力就越大以及所损耗的功率也就越大，从而由于占主导地位的高温导致合金的更快老化和氧化。因此，在复合材料基体中Si含量越高，尤其是高于约10-15％的共熔组成，或者甚至高于20％，导致更低的SCFM寿命，而Si含量越低则提供更长的寿命。
由于与基质中的高Si含量相比，降低基质合金中的Si含量导致更低的电压降，并且由此导致SCFM之前正常操作期间更低的功率损耗。
上述说明并未描述半导体芯片本身的特性和内部结构。总得来说，如果模块代表IGBT模块，则内部结构对应于IGBT或二极管的结构，尽管本发明也可应用于其它半导体组件，如晶闸管。
显然，根据上述教导可以对本发明进行大量改动和变化。因此可以理解，在所附权利要求的范围内，可以不同于本文所具体描述的方式来实施本发明。
附图标记表
1        压装模块
2        半导体器件，芯片
3        复合材料顶板
4        复合材料底板
5        接触活塞(contact piston)
6        接合介质，焊料
11，12   模块外壳电源接头
13       外壳元件

Claims (9)

1.一种大功率压装半导体模块(1)包括：
-导电底板(4)；
-至少一个导电顶板(3)；
-至少一个半导体芯片(2)，包括半导体材料、与底板接触形成平面界面的第一主电极和与顶板接触的第二主电极；
-外壳(11、12、13)，容纳底板、顶板和半导体芯片。
其中提供材料与所述第一或第二主电极的至少其一接触，该材料与半导体材料一起形成共熔合金或熔点低于半导体材料的合金，特征在于
-所述底板(4)或顶板(3)的至少其一由金属基复合材料制造，所述复合材料包括在Al或Ag基体中的界面平面上二维随机分布的石墨短纤维，其热膨胀系数与半导体材料匹配，所述金属基复合材料包含所述形成合金的材料。
2.权利要求1的模块，特征在于
-所述底板(4)和顶板(3)由相同的金属基复合材料制造。
3.权利要求1的模块，特征在于
-所述金属基复合材料具有至少25体积％的金属含量。
4.权利要求3的模块，特征在于
-所述金属基复合材料包含含有半导体材料的金属基质合金。
5.权利要求4的模块，特征在于
-所述金属基质合金的半导体材料含量最高为共熔组成的半导体含量。
6.权利要求5的模块，特征在于
-所述基质包括Si含量最高为13％的Ag、Al、Au或Cu。
7.权利要求4的模块，特征在于
-所述金属基质合金的半导体材料含量根据半导体材料厚度来调节，使得热点合金处于共熔范围内，而没有本体沉淀。
8.权利要求1的模块，特征在于
-所述底板(4)或顶板(3)中至少一个的厚度至少为半导体材料的厚度。
9.权利要求1的模块，特征在于
-所述底板(4)和所述顶板(3)均由金属基复合材料制造，和
-所述底板(4)和顶板(3)具有至少为半导体材料厚度的组合厚度。
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