JP6696576B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6696576B2 JP6696576B2 JP2018537921A JP2018537921A JP6696576B2 JP 6696576 B2 JP6696576 B2 JP 6696576B2 JP 2018537921 A JP2018537921 A JP 2018537921A JP 2018537921 A JP2018537921 A JP 2018537921A JP 6696576 B2 JP6696576 B2 JP 6696576B2
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- 239000004065 semiconductor Substances 0.000 title claims description 90
- 239000004020 conductor Substances 0.000 claims description 148
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
図1は、実施の形態1に係る半導体装置の断面図である。この半導体装置1は、下電極10を備えている。下電極10の上に半導体チップ12が設けられている。半導体チップ12は例えばIGBT又はダイオードである。半導体チップ12の上にはスパイラル導体20が設けられている。スパイラル導体20は、下側スパイラル導体22と、上側スパイラル導体24を有している。
図7は、実施の形態2に係る半導体装置のスパイラル導体の断面図である。上側スパイラル導体24の最も幅が小さい部分と、下側スパイラル導体22の最も幅が小さい部分が接触している。すなわち、下側スパイラル導体22の中央と上側スパイラル導体24の中央が接触している。この場合、電流はプレート30の外側から上側スパイラル導体24の外側に入り、上側スパイラル導体24の中心に達し、下側スパイラル導体22の中心から外側に向かって流れ、半導体チップ12に進入する。
図8は、実施の形態3に係る半導体装置の下側スパイラル導体41と上側スパイラル導体42を示す図である。左上の図が下側スパイラル導体41の平面図であり、この図の破線に沿った断面図が左下の図である。右上の図が上側スパイラル導体42の平面図であり、この図の破線に沿った断面図が右下の図である。下側スパイラル導体41と上側スパイラル導体42は同一の形状を有している。すなわち、下側スパイラル導体41を表裏反転させることで上側スパイラル導体42と同じ形状となる。下側スパイラル導体41の上端と上側スパイラル導体42の下端が接続されてスパイラル導体が構成されている。
図9は、実施の形態4に係る半導体装置の断面図である。半導体チップ12と下電極10の間にスパイラル導体50が設けられている。スパイラル導体50は、下電極10の上に設けられた下側スパイラル導体52と、下側スパイラル導体52の上に設けられた上側スパイラル導体54を備えている。スパイラル導体50の構造はスパイラル導体20の構造と同じである。
Claims (9)
- 下電極と、
前記下電極の上方に設けられた上電極と、
前記下電極と前記上電極の間に設けられた半導体チップと、
前記下電極と前記上電極の間に前記半導体チップと重ねて設けられたプレッシャパッドと、
前記下電極と前記上電極の間に前記半導体チップおよび前記プレッシャパッドと重ねて設けられたスパイラル導体と、を備え、
前記スパイラル導体は、上側スパイラル導体と、前記上側スパイラル導体の下端に接し前記上側スパイラル導体に対向する下側スパイラル導体とを有し、
前記上側スパイラル導体と前記下側スパイラル導体に溝を形成することで、平面視で、前記上側スパイラル導体を流れる電流の向きと、前記下側スパイラル導体を流れる電流の向きを一致させたことを特徴とする半導体装置。 - 前記上側スパイラル導体の最も幅が大きい部分と、前記下側スパイラル導体の最も幅が大きい部分を接触させたことを特徴とする請求項1に記載の半導体装置。
- 前記溝は曲線的に形成されたことを特徴とする請求項1又は2に記載の半導体装置。
- 前記上側スパイラル導体の最も幅が小さい部分と、前記下側スパイラル導体の最も幅が小さい部分を接触させたことを特徴とする請求項1に記載の半導体装置。
- 前記溝は直線的に形成されたことを特徴とする請求項1、2、4のいずれか1項に記載の半導体装置。
- 前記スパイラル導体を、前記下電極と上電極の間に重ねて複数設けたことを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
- 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜6のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料又はダイヤモンドであることを特徴とする請求項7に記載の半導体装置。
- 前記上側スパイラル導体と前記下側スパイラル導体は、上に凸又は下に凸となる厚みが均一な板であることを特徴とする請求項1から8のいずれか1項に記載の半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2016/076331 WO2018047257A1 (ja) | 2016-09-07 | 2016-09-07 | 半導体装置 |
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JPWO2018047257A1 JPWO2018047257A1 (ja) | 2019-02-28 |
JP6696576B2 true JP6696576B2 (ja) | 2020-05-20 |
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US (1) | US10770420B2 (ja) |
JP (1) | JP6696576B2 (ja) |
CN (1) | CN109690767B (ja) |
DE (1) | DE112016007203T5 (ja) |
WO (1) | WO2018047257A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2000260287A (ja) * | 1999-03-11 | 2000-09-22 | Mitsubishi Electric Corp | 接点開閉装置 |
JP3708779B2 (ja) * | 1999-03-29 | 2005-10-19 | セイコーエプソン株式会社 | 液晶表示装置、平面型表示装置及びこれを備えた電子機器 |
EP1263045A1 (en) | 2001-06-01 | 2002-12-04 | ABB Schweiz AG | High power semiconductor module |
JP3669971B2 (ja) * | 2002-05-21 | 2005-07-13 | 三菱電機株式会社 | 半導体モジュール |
EP1403923A1 (en) | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
JP2006287101A (ja) * | 2005-04-04 | 2006-10-19 | Toyota Motor Corp | パワーモジュール、及び、その製造方法 |
JP4802210B2 (ja) * | 2008-05-13 | 2011-10-26 | 株式会社東芝 | マルチチップ圧接型半導体装置 |
JP2010251079A (ja) * | 2009-04-15 | 2010-11-04 | Mitsubishi Electric Corp | 開閉器 |
WO2013057172A1 (en) * | 2011-10-21 | 2013-04-25 | Abb Technology Ag | Power semiconducter module and power semiconductor module assembly with multiple power semiconducter modules |
EP2929562B1 (en) | 2012-12-07 | 2021-04-28 | ABB Power Grids Switzerland AG | Semiconductor assembly |
JP5930070B2 (ja) * | 2012-12-28 | 2016-06-08 | 富士電機株式会社 | 半導体装置 |
JP6101507B2 (ja) | 2013-02-15 | 2017-03-22 | 富士電機株式会社 | 半導体装置の製造方法 |
-
2016
- 2016-09-07 DE DE112016007203.1T patent/DE112016007203T5/de active Pending
- 2016-09-07 JP JP2018537921A patent/JP6696576B2/ja active Active
- 2016-09-07 WO PCT/JP2016/076331 patent/WO2018047257A1/ja active Application Filing
- 2016-09-07 CN CN201680088933.8A patent/CN109690767B/zh active Active
- 2016-09-07 US US16/095,387 patent/US10770420B2/en active Active
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Publication number | Publication date |
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DE112016007203T5 (de) | 2019-06-06 |
US20200035640A1 (en) | 2020-01-30 |
CN109690767A (zh) | 2019-04-26 |
JPWO2018047257A1 (ja) | 2019-02-28 |
US10770420B2 (en) | 2020-09-08 |
WO2018047257A1 (ja) | 2018-03-15 |
CN109690767B (zh) | 2022-08-26 |
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