JP2019110244A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2019110244A JP2019110244A JP2017243057A JP2017243057A JP2019110244A JP 2019110244 A JP2019110244 A JP 2019110244A JP 2017243057 A JP2017243057 A JP 2017243057A JP 2017243057 A JP2017243057 A JP 2017243057A JP 2019110244 A JP2019110244 A JP 2019110244A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- heat
- sealing resin
- heat radiation
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 230000017525 heat dissipation Effects 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims abstract description 36
- 238000007789 sealing Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 230000015556 catabolic process Effects 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 abstract description 26
- 238000009413 insulation Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000002923 metal particle Substances 0.000 description 4
- 239000004519 grease Substances 0.000 description 3
- 229920006122 polyamide resin Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
110:半導体素子
112:上面
114:下面
116:外縁
120、140:放熱板
130:放熱ブロック
136:外縁
150:ボンディングワイヤ
160:端子
310:放熱材
320:プライマ層
320B:プライマ層
330:封止樹脂
Claims (1)
- 半導体装置であって、
上面および下面を有する板状の半導体素子と、
前記下面にはんだ付けされた第1の金属板と、
前記半導体素子の外縁より内側において前記上面にはんだ付けされた放熱ブロックと、
前記半導体素子とは反対側において前記放熱ブロックにはんだ付けされた第2の金属板と、
少なくとも前記上面から前記放熱ブロックの外縁にわたって設けられた放熱材と、
前記第1の金属板と前記第2の金属板との間に、前記半導体素子、前記放熱ブロックおよび前記放熱材を封止する封止樹脂と、
を備えており、
前記放熱材は、前記封止樹脂の熱伝導率以上の熱伝導率を有しているとともに、前記封止樹脂の体積抵抗率以上の体積抵抗率と、前記封止樹脂の絶縁破壊耐圧以上の絶縁破壊耐圧の少なくとも一方を有している、半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017243057A JP6973023B2 (ja) | 2017-12-19 | 2017-12-19 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017243057A JP6973023B2 (ja) | 2017-12-19 | 2017-12-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019110244A true JP2019110244A (ja) | 2019-07-04 |
JP6973023B2 JP6973023B2 (ja) | 2021-11-24 |
Family
ID=67180151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017243057A Active JP6973023B2 (ja) | 2017-12-19 | 2017-12-19 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6973023B2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02288256A (ja) * | 1989-04-28 | 1990-11-28 | Hitachi Ltd | 冷却素子 |
JP2003124406A (ja) * | 2001-08-06 | 2003-04-25 | Denso Corp | 半導体装置 |
WO2011092859A1 (ja) * | 2010-02-01 | 2011-08-04 | トヨタ自動車株式会社 | 半導体装置の製造方法および半導体装置 |
JP2012146929A (ja) * | 2011-01-14 | 2012-08-02 | Aron Kasei Co Ltd | 放熱構造体及びその製造方法 |
-
2017
- 2017-12-19 JP JP2017243057A patent/JP6973023B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02288256A (ja) * | 1989-04-28 | 1990-11-28 | Hitachi Ltd | 冷却素子 |
JP2003124406A (ja) * | 2001-08-06 | 2003-04-25 | Denso Corp | 半導体装置 |
WO2011092859A1 (ja) * | 2010-02-01 | 2011-08-04 | トヨタ自動車株式会社 | 半導体装置の製造方法および半導体装置 |
JP2012146929A (ja) * | 2011-01-14 | 2012-08-02 | Aron Kasei Co Ltd | 放熱構造体及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6973023B2 (ja) | 2021-11-24 |
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