CN1299341C - 树脂密封半导体器件、树脂密封的方法和成型模具 - Google Patents
树脂密封半导体器件、树脂密封的方法和成型模具 Download PDFInfo
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Abstract
在制造树脂密封半导体器件的方法中,半导体器件被置于铸模模腔内,树脂通过铸模的入口被注射到模腔中,在引线部分的一部分暴露的状态下用树脂密封半导体器件。只在面对半导体芯片的表面的模腔表面中布置入口。树脂通过入口向半导体芯片的表面注射。
Description
相关申请的交叉引用
本申请以2003年4月8日提交的日本专利申请No.2003-103862的内容为基础,要求其优先权,并引用其内容以供参考。
技术领域
本发明涉及到一种通过用树脂密封半导体器件形成的树脂密封半导体器件、制造该树脂密封半导体器件的方法和应用于制造方法中的树脂密封工艺的成型模具。
背景技术
通常,树脂密封的半导体器件是通过将半导体芯片安装在引线框架的岛状部分上、用多条接合线将半导体芯片的一侧连接到引线框架的引线部分而形成集成半导体器件,然后用树脂密封半导体器件从而将半导体器件包封起来而形成的。
特别地,树脂密封半导体器件可通过进行树脂密封工艺(转移模)制造,其中半导体器件首先被放置在作为成型模具的铸模的模腔中、通过入口注射熔融的树脂到模腔中充满模腔并使树脂固化。
图4A和4B是描述树脂密封半导体器件的相关技术中的树脂密封工艺的结构图。图4A是半导体器件100放置在下模910中的状态下,从上看的平面示意图。图4B是沿图4A的IVB-IVB线的横截面示意图。
用作成型模具的铸模900通过将上模920和下模910对准形成。铸模900包括连接到流道970的末端的模腔940,流道970从用作树脂容器的剔料池(cull)960引出。
半导体器件100被置于铸模900的模腔940内部。半导体器件100是通过将安装在引线框架的岛状部分20的一侧上的半导体芯片10的表面用包括金线的多条接合线连接到位于半导体芯片10周围的引线框架的引线部分30形成的。
如图4B所示,树脂容器950中的熔融树脂60通过柱塞被挤向剔料池960,流过流道970,并通过入口980被注射到模腔940中。这样,模腔940中充满树脂60。流道970可沿着引线框架的引线部分30的表面形成,树脂60沿位于流道970中的引线部分30流动,并被通过入口980注射到模腔940中。
已被注射到模腔940中的树脂60随后沿半导体芯片10的表面(即接合表面)流动。当发生这种情况时,树脂60沿图4A中箭头所示的布线40的排列方向流动。结果,接触树脂60的布线40被树脂60推动,并沿毗邻布线40的方向流动。由此,布线40彼此接触而发生短路。
特别地,在如图5A中所示的布线40之间的间距已变窄的半导体器件中,或在如图5B所示布线40排列不规则的半导体器件中,存在相对长的布线40。因此,布线40之间的间隔变窄的趋势值得注意,很容易由于布线40彼此接触导致发生短路。
为了抑制该问题,提出了布置多个入口和多个从树脂容器延伸的流道的方法,从而减少熔融流动树脂的压力损失,并提高填充效率,由此抑制接合线的变形(例如,参见JP-A No.2-297946和2000-58573)。
例如,如图6A、6B和6C所示,通过使用相对于一个模腔940设置两个入口980的铸模,可以使流过模腔940的树脂60的流动速度减少约1/2,而不改变相对于单入口型铸模的填充量。因此,可使布线流动变小,并可减少由此导致的布线变形和布线之间的短路故障。
但是,对于这种多入口型铸模,树脂60按照图6A、6B和6C中虚线指示的顺序被填充,容易由于在树脂60流汇合处的进气口而产生空隙B。
当在完成的树脂密封半导体器件中的树脂60中存在这种空隙B时,树脂60中的裂纹容易在空隙B部分出现,这对器件的可靠性有不利影响。
而且,如结合图4A和4B所描述的,流道970沿引线框架的引线部分30的表面形成,并且树脂60沿位于流道970中的引线部分30流动并通过入口980被注射到模腔940中。
由于这个原因,如图4B所示,去除铸模900后,容易在位于入口980和引线部分30的流道970附近的位置K1和K2处留有树脂毛刺。这种树脂毛刺容易吸附灰尘和外来物质,并由此导致引线部分30的破坏或成为后续工艺如成型工艺中的问题。
发明内容
考虑到上述问题,本发明的一个目的是在避免树脂中的空隙和避免树脂密封半导体器件中接合线间的短路之间获得适当的平衡。
为了达到这个目的,本发明的第一方面提供一种制造树脂密封半导体器件的方法,其中通过将半导体芯片的下表面放置在引线框架的岛状部分的一侧上,并用多个接合线将半导体芯片的表面连接到布置在半导体芯片周围的引线框架的引线部分而形成的半导体器件被放置在成型模具的模腔内部,树脂通过成型模具的入口被注射到模腔内,从而在引线部分的一些部分暴露的状态下用树脂密封半导体器件。成型模具的入口只设置在和半导体芯片的表面相对的模腔的表面中。树脂通过入口向半导体芯片的表面注射。
根据本发明的第一方面,可以将树脂从半导体芯片的表面(即接合表面)上方注射到模腔中,由此使树脂流动并用树脂填充模腔。
通过这样做,可以避免树脂在相邻布线的方向流动,因为树脂在基本上和半导体芯片表面上存在的多条接合线排列方向相互垂直的方向流动。为此,即使不使用容易产生空隙的具有多个入口的成型模具进行树脂成型,也可避免由于布线流动产生的短路。
而且,在本发明的成型模具中,因为入口布置在和半导体芯片的表面面对的表面中,和入口相连的流道没有沿引线框架的引线部分的表面设置。为此,很难出现粘附在引线部分的树脂毛刺。
因而,根据本发明,可以在避免树脂中的空隙和避免树脂密封半导体器件中接合线间的短路之间获得适当的平衡。
本发明的第二方面提供制造第一方面的树脂密封半导体器件的方法,其中用于避免岛状部分在树脂注射时由于树脂注射方向的树脂压力发生弯曲的支撑板布置在岛状部分的另一侧的半导体器件用作该半导体器件。
当树脂注射并使其从半导体芯片的表面上方流动时,岛状部分由于在树脂注射方向的树脂压力受压并弯曲,此时半导体芯片和引线部分之间的位置关系随着弯曲发生变化,连接半导体芯片和引线部分的接合线产生变形。
关于这一点,根据本发明,通过放置在岛状部分的另一侧的支撑板抑制岛状部分的弯曲。因而,可避免随弯曲产生的布线变形,更优选的是结果可因此避免布线破坏。
本发明的第三方面提供一种成型模具,该模具应用于其中用树脂密封半导体器件以包封半导体器件的工艺,该半导体器件通过将半导体芯片的下表面放置在引线框架的岛状部分的一侧,并用多条接合线将半导体芯片的表面连接到布置在半导体芯片周围的引线框架的引线部分而形成;成型模具包括其中放置半导体器件的模腔和用于将树脂注射到模腔中的入口,其中入口只开设在面对半导体芯片表面的模腔表面中,并且树脂通过入口向半导体芯片的表面注射。
根据本发明,可提供一种能够适当应用于第一和第二方面的制造方法中的成型模具。
本发明的第四方面提供一种树脂密封半导体器件,其中,半导体器件在引线部分的一些部分暴露状态下用树脂密封;该半导体器件通过将半导体芯片的下表面放置在引线框架的岛状部分的一侧,并用多条接合线将半导体芯片的表面连接到布置在芯片周围的引线框架的引线部分而形成,其中树脂的注射标记位于和半导体芯片的表面面对的树脂端面。
该发明可通过第一方面的制造方法适当制造,其效果和第一方面的发明的效果相同。
本发明的第五方面提供第四方面的树脂密封半导体器件,其中在岛状部分的另一侧放置支撑岛状部分的支撑板。
该发明可通过第二方面的制造方法适当制造,其效果和第二方面的发明的效果相同。
附图说明
从以下参考附图的详细描述中,本发明的上述和其它目的、特点和优势将更加清楚。在附图中:
图1A和1B是关于本发明的一个实施例的树脂密封半导体器件的结构图,图1A是横截面示意图,图1B是平面示意图;
图2A和2B是制造树脂密封半导体器件的方法中使用的铸模的结构图,图2A是铸模的横截面示意图,图2B是铸模的下模的平面示意图。
图3A和3B是在树脂密封半导体器件制造方法中使用的铸模的结构图,图3A是铸模的中间模的平面示意图,图3B是铸模的上模的平面示意图。
图4A和4B是描述相关技术树脂密封工艺的结构图,图4A是在半导体器件放置在下模内的状态下,从上看时的平面示意图;图4B是沿图4A中IVB-IVB线的横截面示意图。
图5A是表示接合线之间的间隔间距已变窄的半导体器件的平面示意图;图5B是表示接合线为不规则排列的半导体器件的平面图。
图6A、6B和6C是示意性说明在相关技术多入口型铸模中树脂的流动的示意图。
具体实施方式
以下将以附图所示的实施例为基础描述本发明。图1A和1B是关于本发明的优选实施例的树脂密封半导体器件200的结构图。图1A是树脂密封半导体器件200的横截面示意图;图1B是从上看的树脂密封半导体器件200的平面示意图。应该注意图1B是通过树脂60看到的视图。
在树脂密封半导体器件200中,除树脂60之外的组成部分构成半导体器件100。在半导体器件100中,半导体芯片10的下表面侧被安装在引线框架的岛状部分的一侧上。半导体器件100可以是树脂密封半导体器件,其中,半导体芯片被安装在引线框架上,并且半导体芯片和引线框架通过接合线连接,诸如方形平面封装(QFP)或小尺寸封装(SOP)。
普通的包括诸如形成于硅芯片上的晶体管的元件的IC芯片可用作半导体芯片10。此处,半导体芯片10的下表面通过粘接剂,如模具膏,被粘附到岛状部分20的一侧。
引线框架的引线部分30围绕半导体芯片10和岛状部分20的周边布置。此处,引线部分30多个地围绕扁平半导体芯片10的端面侧的周边布置。普通的引线框架,如其中的岛状部分20和引线部分30通过对包括铜、铜合金或包括镍的合金的平板材料进行冲孔和刻蚀形成的引线框架可用作引线框架。
半导体芯片10的表面和围绕半导体芯片10的周边布置的引线部分30通过多个接合线40连接。普通接合线,如通过引线接合包括金或铝的引线材料而形成的接合线,可用作接合线40。
散热器50布置在引线框架的岛状部分20的另一侧。散热器50是包括具有优异热导率的材料如铜或钼的平板材料,并且散热器50和岛状部分20通过压紧或粘接在一起而被整体固定。
虽然散热器50优选不构成半导体器件100的一部分,但本实施例的半导体器件100优选和散热器50布置在一起。由于散热器50,半导体芯片10产生的热量被散发出去。而且散热器50构成支撑岛状部分20的支撑板。
在引线部分30的一些部分暴露的状态下用树脂密封半导体器件100,从而将其包封起来。此处,位于树脂60内部的引线部分30的一些部分为内引线,而位于树脂60外部的引线30的一些部分为外引线。
应该注意在本实施例中,为了进一步提高散热效率,散热器50的下表面通过树脂60暴露出来。但是,散热器50不必一定通过树脂60暴露出来,而是也可被树脂60覆盖。
普通密封树脂可用作树脂60。所用的树脂60的例子包括含甲酚酚醛骨架的环氧树脂和含联苯骨架的环氧树脂。
通过将半导体器件100放置在成型模具的模腔内部,并通过成型模具中的入口将树脂注射到模腔内而密封半导体器件100形成树脂密封半导体器件200。
如图1A和1B所示,树脂60的注射标记62处于面对半导体芯片10的树脂60的端面61(即面对半导体芯片10的接合表面)。
注射标记在对应于成型模具的入口的位置处形成。注射标记62是在半导体器件100已用树脂密封后,从成型模具中移去树脂密封半导体器件200时作为毛刺保留的标记。
其次,将参考图2A、2B、3A和3B具体描述制造树脂密封半导体器件200的方法。
图2A、2B、3A和3B是表示在制造树脂密封半导体器件200的方法中用作成型模具的铸模300的结构的示图。铸模300包括叠加并对准的下模310、中间模320和上模330。
图2A是铸模300的横截面示意图,图2B是铸模300的下模310的平面示意图。图2B表示半导体器件100已放置在下模310中的状态。图3A是中间模320的平面示意图,图3B是上模330的平面示意图。
图2A中所示的横截面对应于沿图2B、3A和3B的IIA-IIA线的横截面。为了表示组成元件之间的位置关系,为方便起见,在图3B中用虚线表示不在上模330中形成的树脂容器350和入口380。
首先,参考图2A、2B、3A和3B描述铸模300的结构。铸模300的下模310、中间模320和上模330中的每个均通过切割形成,从而三个铸模310、320和330可对准。
模腔340由形成于下模310和中间模320中的凹陷部分形成。此处表示出两个模腔340,但实际上形成更多的模腔340,因为由多重引线框架形成的多个半导体器件100用树脂一次密封。
和普通的转移模相似,已从树脂容器350注射并被软化的树脂60被加压、输送到剔料池360,通过流道370,并通过入口380被注射到模腔340中。
在本实施例的铸模300中,对于一个模腔340设置一个入口380。入口380布置在面对半导体芯片10的表面(接合面)的模腔340的表面381中,并且树脂60通过入口380向半导体芯片10的表面注射。
特别地,在本实施例中,入口380被设置成圆锥孔,它穿透中间模320,从流道370侧到模腔340侧,并且向模腔340侧变窄。流道370在上模330中形成,从而连接入口380。
本实施例的树脂密封半导体器件200通过下列步骤使用铸模300制造。
首先,制备引线框架。虽然未表示出引线框架,但该引线框架的岛状部分20和引线部分30通过引线框架的框架部分或连杆被整体连接。然后,通过压紧或将它们粘接在一起,使散热器50固定到引线框架的岛状部分20。
其次,半导体芯片10的下表面侧被安装在引线框架的岛状部分20上,通过进行引线接合,将半导体芯片10的表面通过接合线40连接到引线框架的引线部分30。由此,形成半导体器件100。
其次,如图2B所示,半导体器件100被放置在下模310中。然后,如图2A所示,将下模310、中间模320和上模330对准并闭合。这样,将半导体器件100放置在铸模300的模腔340内部。
然后,如图2A所示,进行树脂密封工艺。通过围绕铸模300的外围布置加热器,将铸模300加热到等于或大于树脂60熔化温度的温度。
其次,通过树脂容器350的活塞390对熔化的树脂60加压,而将树脂60输送到剔料池360。从这里,通过流道370和入口380将树脂60注射到模腔340中。这样,树脂60从半导体芯片10的接合面上方注入到模腔340中并流动填充模腔340。
然后,在用树脂60填充模腔340结束且树脂60固化后,从铸模300中移去半导体器件100。树脂60一固化后即刻,填充入口380内部的树脂60和填充模腔340内部的树脂60连成整体,但当移去铸模300时,在入口380和模腔340之间的边界处,树脂60破裂。
这样,在树脂60中形成图1A和1B所示的注射标记62。之后,通过进行诸如分离引线框架的引线部分和连杆的工艺以及成型的工艺完成如图1A和1B所示的树脂密封半导体器件200。
在本实施例中,用作铸模300的是其中入口380布置在和半导体芯片10的表面面对的模腔340的表面381中并且树脂60通过入口380向半导体芯片10的表面注射的铸模。
这样,如上所述,能够从半导体芯片10的表面(即接合面)上方将树脂60注射到模腔340中,使树脂60流动并用树脂60充满模腔340。
通过这样做,可防止布线40在相邻布线40的方向流动,因为树脂60沿基本上和存在于半导体芯片10的表面上的多条接合线40的排列方向正交的方向流动。由于这个原因,即使不用其中容易产生空隙的具有多个入口的成型模具进行树脂成型,也可防止布线流动所导致的短路。
而且,在本实施例的铸模300中,由于入口380布置在面对半导体芯片10的表面的表面中,和入口380相连的流道并不象在相关技术中一样沿引线框架的引线部分30的表面设置。因此,很难出现粘附到引线部分30的树脂毛刺。
而且,虽然树脂60的注射标记62存在于面对半导体芯片10的表面的树脂60的端面61处,但凹陷部分63布置在如图1A所示的端面61中,并且使注射标记62的顶端低于端面61,由此即使注射标记62处于这样的位置,也不明显影响后续工艺。
这样,根据本实施例,在树脂密封半导体器件200中,能够在防止树脂60中的空隙和防止接合线40间的短路之间保持适当平衡。
而且,在本实施例中,半导体器件100优选包括布置在引线框架的岛状部分20的另一侧的散热器50,它用作支撑岛状部分20的支撑板。
一般,因为引线框架具有薄而扁平的形状,当树脂60注射并从半导体芯片10的表面上流动时,岛状部分20有被树脂60注射方向上的树脂60的压力压迫并弯曲的可能。当岛状部分20因此方式而弯曲时,半导体芯片10和引线部分30间的位置关系由于弯曲而改变,并且连接半导体芯片10和引线部分30的接合线40产生变形。
针对这一点,用作支撑板50的散热器50被布置在岛状部分20的另一侧,从而通过散热器50抑制岛状部分20的弯曲。这样,可抑制伴随弯曲产生的布线40的变形,并且最终可防止布线40的破坏,这是优选的。
应该注意,除散热器50外,可用比引线框架的岛状部分20刚性更大的材料如金属做支撑板。而且根据具体情况,可使用没有配置支撑板的半导体器件。
本发明的描述实质上只是示例性的,因此不背离本发明的宗旨的变型意在属于本发明的范围之内。这样的变型将不被认为背离本发明的宗旨和范围。
Claims (2)
1.一种树脂密封半导体器件,其中在引线部分的一部分暴露的状态下用树脂密封半导体器件,该半导体器件通过将半导体芯片的下表面放置在引线框架的岛状部分的一侧上并用多条接合线将半导体芯片的表面连接到围绕半导体芯片布置的引线框架的引线部分而形成,该树脂密封半导体器件包括:
位于面对半导体芯片表面的树脂端面处的注射标记;和
布置在树脂端面内的凹陷部分,其中,使注射标记的顶部低于端面。
2.根据权利要求1的树脂密封半导体器件,进一步包括布置在岛状部分的另一侧用于支撑岛状部分的支撑板。
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KR (1) | KR100591718B1 (zh) |
CN (1) | CN1299341C (zh) |
DE (1) | DE102004017197A1 (zh) |
TW (1) | TWI244706B (zh) |
Families Citing this family (11)
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JP2007243146A (ja) * | 2006-02-09 | 2007-09-20 | Sharp Corp | 半導体装置の製造方法、および、半導体装置の製造装置 |
JP4741383B2 (ja) * | 2006-02-17 | 2011-08-03 | 富士通セミコンダクター株式会社 | 電子部品の樹脂封止方法 |
EP2269800B1 (en) * | 2008-03-28 | 2013-08-14 | Konica Minolta Opto, Inc. | Injection-molding method and injection-molding die |
JP5251791B2 (ja) * | 2009-08-31 | 2013-07-31 | 株式会社デンソー | 樹脂封止型半導体装置およびその製造方法 |
US9070679B2 (en) | 2009-11-24 | 2015-06-30 | Marvell World Trade Ltd. | Semiconductor package with a semiconductor die embedded within substrates |
TWI445139B (zh) * | 2010-06-11 | 2014-07-11 | Advanced Semiconductor Eng | 晶片封裝結構、晶片封裝模具與晶片封裝製程 |
WO2013129543A1 (ja) | 2012-02-28 | 2013-09-06 | 株式会社村田製作所 | 高周波モジュール |
JP2014036119A (ja) * | 2012-08-09 | 2014-02-24 | Apic Yamada Corp | 樹脂モールド装置 |
KR101432380B1 (ko) * | 2012-11-23 | 2014-08-20 | 삼성전기주식회사 | 전력반도체용 모듈 |
DE102018122515B4 (de) * | 2018-09-14 | 2020-03-26 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiteroxid- oder Glas-basierten Verbindungskörpers mit Verdrahtungsstruktur |
CN113276359B (zh) * | 2020-02-19 | 2022-11-08 | 长鑫存储技术有限公司 | 注塑模具及注塑方法 |
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JPH05226396A (ja) * | 1992-02-10 | 1993-09-03 | Nec Corp | 樹脂モールド型半導体装置の製造方法 |
CN1206494A (zh) * | 1996-10-17 | 1999-01-27 | 精工爱普生株式会社 | 薄膜载带和半导体装置及其制造方法和电路板 |
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JP2000077444A (ja) * | 1998-08-31 | 2000-03-14 | Mitsui High Tec Inc | 半導体装置の製造方法 |
JP2002079554A (ja) * | 2000-09-07 | 2002-03-19 | Nec Kyushu Ltd | 樹脂封止装置及び離型方法 |
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FR2598258B1 (fr) * | 1986-04-30 | 1988-10-07 | Aix Les Bains Composants | Procede d'encapsulation de circuits integres. |
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CA2350747C (en) * | 2001-06-15 | 2005-08-16 | Ibm Canada Limited-Ibm Canada Limitee | Improved transfer molding of integrated circuit packages |
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- 2003-04-08 JP JP2003103862A patent/JP4039298B2/ja not_active Expired - Fee Related
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2004
- 2004-04-01 US US10/814,180 patent/US20040203194A1/en not_active Abandoned
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- 2004-04-07 KR KR1020040023850A patent/KR100591718B1/ko not_active IP Right Cessation
- 2004-04-07 DE DE102004017197A patent/DE102004017197A1/de not_active Ceased
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Patent Citations (5)
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JPH05226396A (ja) * | 1992-02-10 | 1993-09-03 | Nec Corp | 樹脂モールド型半導体装置の製造方法 |
CN1206494A (zh) * | 1996-10-17 | 1999-01-27 | 精工爱普生株式会社 | 薄膜载带和半导体装置及其制造方法和电路板 |
CN1242105A (zh) * | 1996-12-26 | 2000-01-19 | 株式会社日立制作所 | 模制塑料型半导体器件及其制造工艺 |
JP2000077444A (ja) * | 1998-08-31 | 2000-03-14 | Mitsui High Tec Inc | 半導体装置の製造方法 |
JP2002079554A (ja) * | 2000-09-07 | 2002-03-19 | Nec Kyushu Ltd | 樹脂封止装置及び離型方法 |
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CN1536633A (zh) | 2004-10-13 |
JP4039298B2 (ja) | 2008-01-30 |
JP2004311748A (ja) | 2004-11-04 |
US20040203194A1 (en) | 2004-10-14 |
KR20040087924A (ko) | 2004-10-15 |
TW200501282A (en) | 2005-01-01 |
DE102004017197A1 (de) | 2004-10-28 |
TWI244706B (en) | 2005-12-01 |
KR100591718B1 (ko) | 2006-06-22 |
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