CN1275309C - 静电吸盘,基座及其制造方法 - Google Patents

静电吸盘,基座及其制造方法 Download PDF

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Publication number
CN1275309C
CN1275309C CNB008169276A CN00816927A CN1275309C CN 1275309 C CN1275309 C CN 1275309C CN B008169276 A CNB008169276 A CN B008169276A CN 00816927 A CN00816927 A CN 00816927A CN 1275309 C CN1275309 C CN 1275309C
Authority
CN
China
Prior art keywords
metal
electrode
electrostatic chuck
electrical contact
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB008169276A
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English (en)
Chinese (zh)
Other versions
CN1409870A (zh
Inventor
R·迪瓦卡尔
M·赞迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Industrial Ceramics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Industrial Ceramics Inc filed Critical Saint Gobain Industrial Ceramics Inc
Publication of CN1409870A publication Critical patent/CN1409870A/zh
Application granted granted Critical
Publication of CN1275309C publication Critical patent/CN1275309C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Products (AREA)
  • Resistance Heating (AREA)
CNB008169276A 1999-12-09 2000-12-05 静电吸盘,基座及其制造方法 Expired - Lifetime CN1275309C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/457,968 US6603650B1 (en) 1999-12-09 1999-12-09 Electrostatic chuck susceptor and method for fabrication
US09/457,968 1999-12-09

Publications (2)

Publication Number Publication Date
CN1409870A CN1409870A (zh) 2003-04-09
CN1275309C true CN1275309C (zh) 2006-09-13

Family

ID=23818807

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008169276A Expired - Lifetime CN1275309C (zh) 1999-12-09 2000-12-05 静电吸盘,基座及其制造方法

Country Status (8)

Country Link
US (1) US6603650B1 (enExample)
JP (1) JP4768185B2 (enExample)
KR (1) KR100459748B1 (enExample)
CN (1) CN1275309C (enExample)
AU (1) AU4516001A (enExample)
DE (1) DE10085266B4 (enExample)
GB (1) GB2375889B (enExample)
WO (1) WO2001043183A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101399175B (zh) * 2007-09-25 2010-06-23 佳能安内华股份有限公司 显示基板制造方法

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US6744618B2 (en) * 1999-12-09 2004-06-01 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks with flat film electrode
CN1655022A (zh) * 2004-02-14 2005-08-17 鸿富锦精密工业(深圳)有限公司 基板贴合装置
TWI350394B (en) * 2004-04-16 2011-10-11 Chimei Innolux Corp Apparatus and method for connecting two substrates
JP4542485B2 (ja) 2004-12-14 2010-09-15 日本碍子株式会社 アルミナ部材及びその製造方法
JP2007258610A (ja) 2006-03-24 2007-10-04 Ngk Insulators Ltd アルミナ焼成体
JP5094863B2 (ja) * 2007-07-23 2012-12-12 株式会社クリエイティブ テクノロジー 基板吸着装置及びその製造方法
TWI450353B (zh) * 2008-01-08 2014-08-21 Ngk Insulators Ltd A bonding structure and a semiconductor manufacturing apparatus
DE102008035240B4 (de) * 2008-07-29 2017-07-06 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
KR102382823B1 (ko) 2015-09-04 2022-04-06 삼성전자주식회사 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치
WO2020086122A1 (en) * 2018-10-24 2020-04-30 Applied Materials, Inc. Substrate support designs for a deposition chamber

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US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
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JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
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US5834374A (en) * 1994-09-30 1998-11-10 International Business Machines Corporation Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
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US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
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JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3670416B2 (ja) 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US6017485A (en) 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6255601B1 (en) * 1997-04-01 2001-07-03 Applied Materials, Inc. Conductive feedthrough for a ceramic body and method of fabricating same
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
JP3670444B2 (ja) 1997-06-06 2005-07-13 日本碍子株式会社 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same
JP3271601B2 (ja) * 1998-03-05 2002-04-02 ウシオ電機株式会社 管球用電気導入体およびその製造方法
US6744618B2 (en) * 1999-12-09 2004-06-01 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks with flat film electrode
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101399175B (zh) * 2007-09-25 2010-06-23 佳能安内华股份有限公司 显示基板制造方法

Also Published As

Publication number Publication date
JP4768185B2 (ja) 2011-09-07
DE10085266T1 (de) 2002-12-12
WO2001043183A9 (en) 2002-11-28
KR20020059440A (ko) 2002-07-12
WO2001043183A2 (en) 2001-06-14
JP2003517730A (ja) 2003-05-27
GB2375889B (en) 2004-03-10
AU4516001A (en) 2001-06-18
GB2375889A (en) 2002-11-27
KR100459748B1 (ko) 2004-12-03
DE10085266B4 (de) 2011-08-11
US6603650B1 (en) 2003-08-05
WO2001043183A3 (en) 2002-05-10
GB0215883D0 (en) 2002-08-14
CN1409870A (zh) 2003-04-09

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Granted publication date: 20060913

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