KR100459748B1 - 정전기 척 및 이의 제조방법 - Google Patents

정전기 척 및 이의 제조방법 Download PDF

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Publication number
KR100459748B1
KR100459748B1 KR10-2002-7007252A KR20027007252A KR100459748B1 KR 100459748 B1 KR100459748 B1 KR 100459748B1 KR 20027007252 A KR20027007252 A KR 20027007252A KR 100459748 B1 KR100459748 B1 KR 100459748B1
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KR
South Korea
Prior art keywords
metal
electrode
electrical contact
delete delete
precursor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR10-2002-7007252A
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English (en)
Korean (ko)
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KR20020059440A (ko
Inventor
디바카라메쉬
잔디모테자
Original Assignee
생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
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Application filed by 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 filed Critical 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
Publication of KR20020059440A publication Critical patent/KR20020059440A/ko
Application granted granted Critical
Publication of KR100459748B1 publication Critical patent/KR100459748B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Products (AREA)
  • Resistance Heating (AREA)
KR10-2002-7007252A 1999-12-09 2000-12-05 정전기 척 및 이의 제조방법 Expired - Lifetime KR100459748B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/457,968 US6603650B1 (en) 1999-12-09 1999-12-09 Electrostatic chuck susceptor and method for fabrication
US09/457,968 1999-12-09

Publications (2)

Publication Number Publication Date
KR20020059440A KR20020059440A (ko) 2002-07-12
KR100459748B1 true KR100459748B1 (ko) 2004-12-03

Family

ID=23818807

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7007252A Expired - Lifetime KR100459748B1 (ko) 1999-12-09 2000-12-05 정전기 척 및 이의 제조방법

Country Status (8)

Country Link
US (1) US6603650B1 (enExample)
JP (1) JP4768185B2 (enExample)
KR (1) KR100459748B1 (enExample)
CN (1) CN1275309C (enExample)
AU (1) AU4516001A (enExample)
DE (1) DE10085266B4 (enExample)
GB (1) GB2375889B (enExample)
WO (1) WO2001043183A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10312059B2 (en) 2015-09-04 2019-06-04 Samsung Electronics Co., Ltd. Ring member with air holes and substrate processing system including the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
CN1655022A (zh) * 2004-02-14 2005-08-17 鸿富锦精密工业（深圳）有限公司 基板贴合装置
TWI350394B (en) * 2004-04-16 2011-10-11 Chimei Innolux Corp Apparatus and method for connecting two substrates
JP4542485B2 (ja) 2004-12-14 2010-09-15 日本碍子株式会社 アルミナ部材及びその製造方法
JP2007258610A (ja) 2006-03-24 2007-10-04 Ngk Insulators Ltd アルミナ焼成体
JP5094863B2 (ja) * 2007-07-23 2012-12-12 株式会社クリエイティブ テクノロジー 基板吸着装置及びその製造方法
JP4469006B2 (ja) * 2007-09-25 2010-05-26 キヤノンアネルバ株式会社 表示用基板の製造方法
TWI450353B (zh) * 2008-01-08 2014-08-21 Ngk Insulators Ltd A bonding structure and a semiconductor manufacturing apparatus
DE102008035240B4 (de) * 2008-07-29 2017-07-06 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
US12198967B2 (en) * 2018-10-24 2025-01-14 Applied Materials, Inc. Substrate support designs for a deposition chamber

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944797A (ja) 1982-09-07 1984-03-13 増田　閃一 物体の静電的処理装置
JPS6278170A (ja) * 1985-10-02 1987-04-10 三菱重工業株式会社 ＳｉＣ又はＳｉ↓３Ｎ↓４と金属との接合体
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4778778A (en) 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JP3016514B2 (ja) * 1988-12-19 2000-03-06 株式会社東芝 耐熱性モリブデン線
JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
EP0506537A1 (en) 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
DE69429243T2 (de) 1993-11-18 2002-06-27 Ngk Insulators, Ltd. Elektrode zur herstellung von plasma und verfahren zur herstellung der elektrode
US5541145A (en) 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
KR100430643B1 (ko) 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 두께가 균일한 절연체 막을 갖는 정전기 척
US5834374A (en) * 1994-09-30 1998-11-10 International Business Machines Corporation Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5817406A (en) 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
EP0992470B1 (en) 1995-08-03 2006-03-08 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3670416B2 (ja) 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US6017485A (en) 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
US6255601B1 (en) * 1997-04-01 2001-07-03 Applied Materials, Inc. Conductive feedthrough for a ceramic body and method of fabricating same
JP3670444B2 (ja) 1997-06-06 2005-07-13 日本碍子株式会社 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same
JP3271601B2 (ja) * 1998-03-05 2002-04-02 ウシオ電機株式会社 管球用電気導入体およびその製造方法
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
US6723274B1 (en) * 1999-12-09 2004-04-20 Saint-Gobain Ceramics & Plastics, Inc. High-purity low-resistivity electrostatic chucks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10312059B2 (en) 2015-09-04 2019-06-04 Samsung Electronics Co., Ltd. Ring member with air holes and substrate processing system including the same

Also Published As

Publication number Publication date
WO2001043183A3 (en) 2002-05-10
AU4516001A (en) 2001-06-18
GB0215883D0 (en) 2002-08-14
WO2001043183A9 (en) 2002-11-28
CN1275309C (zh) 2006-09-13
JP2003517730A (ja) 2003-05-27
GB2375889A (en) 2002-11-27
DE10085266B4 (de) 2011-08-11
US6603650B1 (en) 2003-08-05
DE10085266T1 (de) 2002-12-12
WO2001043183A2 (en) 2001-06-14
JP4768185B2 (ja) 2011-09-07
KR20020059440A (ko) 2002-07-12
GB2375889B (en) 2004-03-10
CN1409870A (zh) 2003-04-09

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