CN1262009C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1262009C
CN1262009C CNB031462588A CN03146258A CN1262009C CN 1262009 C CN1262009 C CN 1262009C CN B031462588 A CNB031462588 A CN B031462588A CN 03146258 A CN03146258 A CN 03146258A CN 1262009 C CN1262009 C CN 1262009C
Authority
CN
China
Prior art keywords
region
inductor element
high resistance
semiconductor substrate
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031462588A
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English (en)
Chinese (zh)
Other versions
CN1485919A (zh
Inventor
吉村鉄夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of CN1485919A publication Critical patent/CN1485919A/zh
Application granted granted Critical
Publication of CN1262009C publication Critical patent/CN1262009C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
CNB031462588A 2002-07-04 2003-07-04 半导体器件 Expired - Fee Related CN1262009C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002196118A JP4355128B2 (ja) 2002-07-04 2002-07-04 半導体装置およびその製造方法
JP196118/2002 2002-07-04

Publications (2)

Publication Number Publication Date
CN1485919A CN1485919A (zh) 2004-03-31
CN1262009C true CN1262009C (zh) 2006-06-28

Family

ID=29997038

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031462588A Expired - Fee Related CN1262009C (zh) 2002-07-04 2003-07-04 半导体器件

Country Status (5)

Country Link
US (1) US6867475B2 (enExample)
JP (1) JP4355128B2 (enExample)
KR (1) KR101005961B1 (enExample)
CN (1) CN1262009C (enExample)
TW (1) TWI286819B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4651920B2 (ja) * 2003-07-15 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置
SE0302107D0 (sv) * 2003-07-18 2003-07-18 Infineon Technologies Ag Electromagnetic device and method of operating the same
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
CN1591788A (zh) * 2003-08-27 2005-03-09 上海宏力半导体制造有限公司 多晶硅层的处理方法
CN1282246C (zh) * 2003-09-01 2006-10-25 上海宏力半导体制造有限公司 可阻断寄生损失电流的高功率射频集成电路及其制造方法
SE526360C2 (sv) * 2004-01-09 2005-08-30 Infineon Technologies Ag Monolitiskt integrerad krets
US20060097346A1 (en) * 2004-11-10 2006-05-11 Advanpack Solutions Pte Ltd Structure for high quality factor inductor operation
US7501690B2 (en) * 2005-05-09 2009-03-10 International Business Machines Corporation Semiconductor ground shield method
JP4661715B2 (ja) * 2006-07-21 2011-03-30 セイコーエプソン株式会社 アンテナ装置
US8860544B2 (en) * 2007-06-26 2014-10-14 Mediatek Inc. Integrated inductor
US7943857B2 (en) * 2008-01-16 2011-05-17 Ralink Technology Corporation Sliced electromagnetic cage for inductors
US8106479B1 (en) * 2008-10-01 2012-01-31 Qualcomm Atheros, Inc. Patterned capacitor ground shield for inductor in an integrated circuit
JP2010118471A (ja) * 2008-11-12 2010-05-27 Panasonic Corp 半導体装置
US7935549B2 (en) 2008-12-09 2011-05-03 Renesas Electronics Corporation Seminconductor device
US20100295150A1 (en) * 2009-05-22 2010-11-25 Chan Kuei-Ti Semiconductor device with oxide define dummy feature
US8108803B2 (en) * 2009-10-22 2012-01-31 International Business Machines Corporation Geometry based electrical hotspot detection in integrated circuit layouts
CN102820286A (zh) * 2012-07-16 2012-12-12 昆山华太电子技术有限公司 一种提高功率集成电路无源器件性能的结构
US8652934B1 (en) * 2012-12-26 2014-02-18 Micron Technology, Inc. Semiconductor substrate for photonic and electronic structures and method of manufacture
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
CN104979200B (zh) * 2014-04-03 2018-04-27 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN107658288B (zh) * 2014-11-21 2020-02-07 威锋电子股份有限公司 集成电路装置
US11139239B2 (en) * 2019-10-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed inductor structure to reduce step height
CN114556553B (zh) * 2019-10-29 2025-10-28 华为技术有限公司 一种半导体器件及其制造方法
FR3142603B1 (fr) * 2022-11-28 2026-01-02 Stmicroelectronics Crolles 2 Sas Circuit intégré comportant un composant passif dans une partie d’interconnexion, procédé de fabrication correspondant.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JPH09270515A (ja) * 1996-04-01 1997-10-14 Matsushita Electric Ind Co Ltd 半導体装置
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
US7575969B2 (en) * 2000-03-02 2009-08-18 Texas Instruments Incorporated Buried layer and method
JP3715502B2 (ja) 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
KR20020084177A (ko) * 2001-01-16 2002-11-04 소니 가부시끼 가이샤 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JP2004039924A (ja) 2004-02-05
JP4355128B2 (ja) 2009-10-28
US6867475B2 (en) 2005-03-15
TWI286819B (en) 2007-09-11
CN1485919A (zh) 2004-03-31
KR20040004153A (ko) 2004-01-13
US20040004255A1 (en) 2004-01-08
KR101005961B1 (ko) 2011-01-05
TW200401407A (en) 2004-01-16

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Effective date of registration: 20081219

Address after: Tokyo, Japan

Patentee after: Fujitsu Microelectronics Ltd.

Address before: Kanagawa, Japan

Patentee before: Fujitsu Ltd.

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Effective date: 20081219

C56 Change in the name or address of the patentee

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CP01 Change in the name or title of a patent holder

Address after: Kanagawa

Patentee after: FUJITSU MICROELECTRONICS Ltd.

Address before: Kanagawa

Patentee before: Fujitsu Microelectronics Ltd.

CP02 Change in the address of a patent holder

Address after: Kanagawa

Patentee after: FUJITSU MICROELECTRONICS Ltd.

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060628

Termination date: 20160704