KR101005961B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR101005961B1
KR101005961B1 KR1020030044804A KR20030044804A KR101005961B1 KR 101005961 B1 KR101005961 B1 KR 101005961B1 KR 1020030044804 A KR1020030044804 A KR 1020030044804A KR 20030044804 A KR20030044804 A KR 20030044804A KR 101005961 B1 KR101005961 B1 KR 101005961B1
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South Korea
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region
semiconductor substrate
high resistance
inductor element
resistance region
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KR1020030044804A
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English (en)
Korean (ko)
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KR20040004153A (ko
Inventor
요시무라데쯔오
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후지쯔 세미컨덕터 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
KR1020030044804A 2002-07-04 2003-07-03 반도체 장치 및 반도체 장치의 제조 방법 Expired - Fee Related KR101005961B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00196118 2002-07-04
JP2002196118A JP4355128B2 (ja) 2002-07-04 2002-07-04 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20040004153A KR20040004153A (ko) 2004-01-13
KR101005961B1 true KR101005961B1 (ko) 2011-01-05

Family

ID=29997038

Family Applications (1)

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KR1020030044804A Expired - Fee Related KR101005961B1 (ko) 2002-07-04 2003-07-03 반도체 장치 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US6867475B2 (enExample)
JP (1) JP4355128B2 (enExample)
KR (1) KR101005961B1 (enExample)
CN (1) CN1262009C (enExample)
TW (1) TWI286819B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4651920B2 (ja) * 2003-07-15 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置
SE0302107D0 (sv) * 2003-07-18 2003-07-18 Infineon Technologies Ag Electromagnetic device and method of operating the same
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
CN1591788A (zh) * 2003-08-27 2005-03-09 上海宏力半导体制造有限公司 多晶硅层的处理方法
CN1282246C (zh) * 2003-09-01 2006-10-25 上海宏力半导体制造有限公司 可阻断寄生损失电流的高功率射频集成电路及其制造方法
SE526360C2 (sv) * 2004-01-09 2005-08-30 Infineon Technologies Ag Monolitiskt integrerad krets
US20060097346A1 (en) * 2004-11-10 2006-05-11 Advanpack Solutions Pte Ltd Structure for high quality factor inductor operation
US7501690B2 (en) * 2005-05-09 2009-03-10 International Business Machines Corporation Semiconductor ground shield method
JP4661715B2 (ja) * 2006-07-21 2011-03-30 セイコーエプソン株式会社 アンテナ装置
US8860544B2 (en) * 2007-06-26 2014-10-14 Mediatek Inc. Integrated inductor
US7943857B2 (en) * 2008-01-16 2011-05-17 Ralink Technology Corporation Sliced electromagnetic cage for inductors
US8106479B1 (en) * 2008-10-01 2012-01-31 Qualcomm Atheros, Inc. Patterned capacitor ground shield for inductor in an integrated circuit
JP2010118471A (ja) * 2008-11-12 2010-05-27 Panasonic Corp 半導体装置
JP2010160142A (ja) 2008-12-09 2010-07-22 Renesas Electronics Corp 信号送受信方法、半導体装置の製造方法、半導体装置、およびテスタ装置
US20100295150A1 (en) * 2009-05-22 2010-11-25 Chan Kuei-Ti Semiconductor device with oxide define dummy feature
US8108803B2 (en) * 2009-10-22 2012-01-31 International Business Machines Corporation Geometry based electrical hotspot detection in integrated circuit layouts
CN102820286A (zh) * 2012-07-16 2012-12-12 昆山华太电子技术有限公司 一种提高功率集成电路无源器件性能的结构
US8652934B1 (en) * 2012-12-26 2014-02-18 Micron Technology, Inc. Semiconductor substrate for photonic and electronic structures and method of manufacture
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
CN104979200B (zh) * 2014-04-03 2018-04-27 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN105575959B (zh) * 2014-11-21 2018-06-15 威盛电子股份有限公司 集成电路装置
US11139239B2 (en) * 2019-10-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed inductor structure to reduce step height
CN114556553B (zh) * 2019-10-29 2025-10-28 华为技术有限公司 一种半导体器件及其制造方法
FR3142603A1 (fr) * 2022-11-28 2024-05-31 Stmicroelectronics (Crolles 2) Sas Circuit intégré comportant un composant passif dans une partie d’interconnexion, procédé de fabrication correspondant.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JPH09270515A (ja) * 1996-04-01 1997-10-14 Matsushita Electric Ind Co Ltd 半導体装置
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
JP2001267320A (ja) 2000-03-14 2001-09-28 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7575969B2 (en) * 2000-03-02 2009-08-18 Texas Instruments Incorporated Buried layer and method
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2002056381A1 (ja) * 2001-01-16 2004-05-20 ソニー株式会社 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JPH09270515A (ja) * 1996-04-01 1997-10-14 Matsushita Electric Ind Co Ltd 半導体装置
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
JP2001267320A (ja) 2000-03-14 2001-09-28 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TWI286819B (en) 2007-09-11
JP2004039924A (ja) 2004-02-05
KR20040004153A (ko) 2004-01-13
CN1485919A (zh) 2004-03-31
TW200401407A (en) 2004-01-16
US6867475B2 (en) 2005-03-15
US20040004255A1 (en) 2004-01-08
CN1262009C (zh) 2006-06-28
JP4355128B2 (ja) 2009-10-28

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