CN1252831C - 沟槽栅费米阈值场效应晶体管及其制造方法 - Google Patents

沟槽栅费米阈值场效应晶体管及其制造方法 Download PDF

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Publication number
CN1252831C
CN1252831C CNB018222072A CN01822207A CN1252831C CN 1252831 C CN1252831 C CN 1252831C CN B018222072 A CNB018222072 A CN B018222072A CN 01822207 A CN01822207 A CN 01822207A CN 1252831 C CN1252831 C CN 1252831C
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China
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depth
degree
effect transistor
field
conduction type
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Expired - Fee Related
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CNB018222072A
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English (en)
Chinese (zh)
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CN1488173A (zh
Inventor
M·W·登宁
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Thunderbird Technologies Inc
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Thunderbird Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB018222072A 2000-11-22 2001-11-08 沟槽栅费米阈值场效应晶体管及其制造方法 Expired - Fee Related CN1252831C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/718,816 2000-11-22
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors

Publications (2)

Publication Number Publication Date
CN1488173A CN1488173A (zh) 2004-04-07
CN1252831C true CN1252831C (zh) 2006-04-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018222072A Expired - Fee Related CN1252831C (zh) 2000-11-22 2001-11-08 沟槽栅费米阈值场效应晶体管及其制造方法

Country Status (7)

Country Link
US (1) US6555872B1 (https=)
EP (1) EP1344257A2 (https=)
JP (1) JP2004526295A (https=)
KR (1) KR100840630B1 (https=)
CN (1) CN1252831C (https=)
AU (1) AU2002230624A1 (https=)
WO (1) WO2002043117A2 (https=)

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Publication number Publication date
KR100840630B1 (ko) 2008-06-24
CN1488173A (zh) 2004-04-07
EP1344257A2 (en) 2003-09-17
AU2002230624A1 (en) 2002-06-03
US6555872B1 (en) 2003-04-29
JP2004526295A (ja) 2004-08-26
KR20030074626A (ko) 2003-09-19
WO2002043117A3 (en) 2002-10-10
WO2002043117A2 (en) 2002-05-30

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