CN1237620C - 半导体装置和半导体装置的制造方法 - Google Patents

半导体装置和半导体装置的制造方法 Download PDF

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Publication number
CN1237620C
CN1237620C CNB031020909A CN03102090A CN1237620C CN 1237620 C CN1237620 C CN 1237620C CN B031020909 A CNB031020909 A CN B031020909A CN 03102090 A CN03102090 A CN 03102090A CN 1237620 C CN1237620 C CN 1237620C
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CN
China
Prior art keywords
layer
semiconductor substrate
semiconductor device
mentioned
gate electrode
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Expired - Fee Related
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CNB031020909A
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English (en)
Chinese (zh)
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CN1435896A (zh
Inventor
宫野清孝
大内和也
水岛一郎
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Toshiba Corp
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Toshiba Corp
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Publication of CN1435896A publication Critical patent/CN1435896A/zh
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Publication of CN1237620C publication Critical patent/CN1237620C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB031020909A 2002-01-31 2003-01-29 半导体装置和半导体装置的制造方法 Expired - Fee Related CN1237620C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP023548/2002 2002-01-31
JP2002023548A JP3657915B2 (ja) 2002-01-31 2002-01-31 半導体装置および半導体装置の製造方法

Related Child Applications (1)

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CNB2004101012197A Division CN1327498C (zh) 2002-01-31 2003-01-29 半导体装置和半导体装置的制造方法

Publications (2)

Publication Number Publication Date
CN1435896A CN1435896A (zh) 2003-08-13
CN1237620C true CN1237620C (zh) 2006-01-18

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CNB031020909A Expired - Fee Related CN1237620C (zh) 2002-01-31 2003-01-29 半导体装置和半导体装置的制造方法
CNB2004101012197A Expired - Fee Related CN1327498C (zh) 2002-01-31 2003-01-29 半导体装置和半导体装置的制造方法

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CNB2004101012197A Expired - Fee Related CN1327498C (zh) 2002-01-31 2003-01-29 半导体装置和半导体装置的制造方法

Country Status (4)

Country Link
US (2) US6891232B2 (https=)
JP (1) JP3657915B2 (https=)
CN (2) CN1237620C (https=)
TW (1) TWI284373B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100540341B1 (ko) * 2003-12-31 2006-01-11 동부아남반도체 주식회사 반도체 소자 제조방법
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
JP2006295025A (ja) * 2005-04-14 2006-10-26 Sharp Corp 半導体装置およびその製造方法
JP2007299991A (ja) * 2006-05-01 2007-11-15 Toshiba Corp 半導体装置及びその製造方法
US7874011B2 (en) * 2006-12-01 2011-01-18 International Business Machines Corporation Authenticating user identity when resetting passwords
US7482270B2 (en) * 2006-12-05 2009-01-27 International Business Machines Corporation Fully and uniformly silicided gate structure and method for forming same
KR100844933B1 (ko) * 2007-06-26 2008-07-09 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US20090004851A1 (en) * 2007-06-29 2009-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Salicidation process using electroless plating to deposit metal and introduce dopant impurities
US7772074B2 (en) * 2007-10-18 2010-08-10 Applied Materials, Inc. Method of forming conformal silicon layer for recessed source-drain
KR20090065570A (ko) * 2007-12-18 2009-06-23 삼성전자주식회사 반도체 소자의 및 이의 제조방법
US20100044804A1 (en) * 2008-08-25 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Novel high-k metal gate structure and method of making
CN115443356A (zh) 2020-04-15 2022-12-06 巴斯夫欧洲公司 含有水性聚氨酯分散体和双组分聚氨酯的层压物及其用途
KR102874702B1 (ko) * 2021-02-25 2025-10-21 주식회사 디비하이텍 알에프 스위치 소자 및 제조방법

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US5470794A (en) * 1994-02-23 1995-11-28 Advanced Micro Devices Method for forming a silicide using ion beam mixing
JPH098297A (ja) 1995-06-26 1997-01-10 Mitsubishi Electric Corp 半導体装置、その製造方法及び電界効果トランジスタ
EP0793271A3 (en) * 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
US5824586A (en) * 1996-10-23 1998-10-20 Advanced Micro Devices, Inc. Method of manufacturing a raised source/drain MOSFET
CN1125482C (zh) * 1997-10-15 2003-10-22 世界先进积体电路股份有限公司 具有p+多晶硅栅极的金属氧化物半导体晶体管的制作方法
US6071782A (en) * 1998-02-13 2000-06-06 Sharp Laboratories Of America, Inc. Partial silicidation method to form shallow source/drain junctions
US6232641B1 (en) * 1998-05-29 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor
US6559036B1 (en) * 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6395624B1 (en) * 1999-02-22 2002-05-28 International Business Machines Corporation Method for forming implants in semiconductor fabrication
US6207995B1 (en) * 1999-02-23 2001-03-27 Advanced Micro Devices, Inc. High K integration of gate dielectric with integrated spacer formation for high speed CMOS
US6174791B1 (en) * 1999-03-25 2001-01-16 United Microelectronics Corp. Method for a pre-amorphization
US6333217B1 (en) * 1999-05-14 2001-12-25 Matsushita Electric Industrial Co., Ltd. Method of forming MOSFET with channel, extension and pocket implants
US6346732B1 (en) 1999-05-14 2002-02-12 Kabushiki Kaisha Toshiba Semiconductor device with oxide mediated epitaxial layer
JP3886085B2 (ja) * 1999-05-14 2007-02-28 株式会社東芝 半導体エピタキシャル基板の製造方法
JP4010724B2 (ja) * 1999-12-28 2007-11-21 株式会社東芝 半導体装置の製造方法
US6475868B1 (en) * 1999-08-18 2002-11-05 Advanced Micro Devices, Inc. Oxygen implantation for reduction of junction capacitance in MOS transistors
JP2002124665A (ja) * 2000-10-12 2002-04-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20020192914A1 (en) * 2001-06-15 2002-12-19 Kizilyalli Isik C. CMOS device fabrication utilizing selective laser anneal to form raised source/drain areas

Also Published As

Publication number Publication date
US20030141549A1 (en) 2003-07-31
TW200405471A (en) 2004-04-01
TWI284373B (en) 2007-07-21
CN1435896A (zh) 2003-08-13
US6891232B2 (en) 2005-05-10
CN1327498C (zh) 2007-07-18
CN1638065A (zh) 2005-07-13
JP3657915B2 (ja) 2005-06-08
US20050035413A1 (en) 2005-02-17
JP2003224261A (ja) 2003-08-08

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Granted publication date: 20060118

Termination date: 20100129