CN1819200A - 半导体器件和用于制造半导体器件的方法 - Google Patents
半导体器件和用于制造半导体器件的方法 Download PDFInfo
- Publication number
- CN1819200A CN1819200A CN200610006642.8A CN200610006642A CN1819200A CN 1819200 A CN1819200 A CN 1819200A CN 200610006642 A CN200610006642 A CN 200610006642A CN 1819200 A CN1819200 A CN 1819200A
- Authority
- CN
- China
- Prior art keywords
- grid
- electrode
- gate electrode
- dielectric film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000010410 layer Substances 0.000 claims description 77
- 239000000463 material Substances 0.000 claims description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 229910005883 NiSi Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 48
- 229920005591 polysilicon Polymers 0.000 description 48
- 229910052759 nickel Inorganic materials 0.000 description 27
- 230000000694 effects Effects 0.000 description 22
- 238000001020 plasma etching Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- -1 as shown in Figure 7 Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241000027294 Fusi Species 0.000 description 1
- 229910006137 NiGe Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28105—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005019293 | 2005-01-27 | ||
JP2005019293A JP4473741B2 (ja) | 2005-01-27 | 2005-01-27 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1819200A true CN1819200A (zh) | 2006-08-16 |
CN100448008C CN100448008C (zh) | 2008-12-31 |
Family
ID=36695875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100066428A Active CN100448008C (zh) | 2005-01-27 | 2006-01-27 | 半导体器件和用于制造半导体器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US20060163662A1 (zh) |
JP (1) | JP4473741B2 (zh) |
CN (1) | CN100448008C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226931B (zh) * | 2007-01-18 | 2010-06-02 | 国际商业机器公司 | 完全硅化区域以提高性能的结构及其方法 |
CN103000518A (zh) * | 2011-09-09 | 2013-03-27 | 联华电子股份有限公司 | 形成非平面晶体管的方法 |
CN103854980A (zh) * | 2012-11-29 | 2014-06-11 | 中国科学院微电子研究所 | 形成半导体器件替代栅的方法以及制造半导体器件的方法 |
CN103000518B (zh) * | 2011-09-09 | 2016-12-14 | 联华电子股份有限公司 | 形成非平面晶体管的方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4440080B2 (ja) * | 2004-11-12 | 2010-03-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2007081249A (ja) * | 2005-09-15 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
CN1945852A (zh) * | 2005-10-06 | 2007-04-11 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US20070090417A1 (en) * | 2005-10-26 | 2007-04-26 | Chiaki Kudo | Semiconductor device and method for fabricating the same |
JP2007173347A (ja) * | 2005-12-20 | 2007-07-05 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US20080237743A1 (en) * | 2007-03-30 | 2008-10-02 | Texas Instruments Incorporated | Integration Scheme for Dual Work Function Metal Gates |
US7482270B2 (en) * | 2006-12-05 | 2009-01-27 | International Business Machines Corporation | Fully and uniformly silicided gate structure and method for forming same |
US20080173950A1 (en) * | 2007-01-18 | 2008-07-24 | International Business Machines Corporation | Structure and Method of Fabricating Electrical Structure Having Improved Charge Mobility |
WO2009101763A1 (ja) * | 2008-02-12 | 2009-08-20 | Panasonic Corporation | 半導体装置及びその製造方法 |
US9934976B2 (en) * | 2008-12-18 | 2018-04-03 | Intel Corporation | Methods of forming low interface resistance rare earth metal contacts and structures formed thereby |
JP2010258124A (ja) * | 2009-04-23 | 2010-11-11 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
US8642371B2 (en) * | 2011-04-06 | 2014-02-04 | Shamsoddin Mohajerzadeh | Method and system for fabricating ion-selective field-effect transistor (ISFET) |
JP2014524673A (ja) * | 2011-08-22 | 2014-09-22 | 1366 テクノロジーズ インク. | シリコンウェーハを酸性ウェット化学エッチングする配合 |
US8629512B2 (en) | 2012-03-28 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate stack of fin field effect transistor with slanted sidewalls |
US9111783B2 (en) * | 2012-04-13 | 2015-08-18 | Renesas Electronics Corporation | Semiconductor devices with self-aligned source drain contacts and methods for making the same |
US8921178B2 (en) * | 2012-05-16 | 2014-12-30 | Renesas Electronics Corporation | Semiconductor devices with self-aligned source drain contacts and methods for making the same |
WO2015047313A1 (en) * | 2013-09-27 | 2015-04-02 | Intel Corporation | Non-planar i/o and logic semiconductor devices having different workfunction on common substrate |
US9520500B1 (en) * | 2015-12-07 | 2016-12-13 | International Business Machines Corporation | Self heating reduction for analog radio frequency (RF) device |
US10096596B2 (en) * | 2015-12-15 | 2018-10-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure having a plurality of gate structures |
US20220052041A1 (en) * | 2020-08-12 | 2022-02-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335254B1 (en) * | 2000-08-09 | 2002-01-01 | Micron Technology, Inc. | Methods of forming transistors |
JP2002141420A (ja) * | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR100495023B1 (ko) * | 2000-12-28 | 2005-06-14 | 가부시끼가이샤 도시바 | 반도체 장치 및 그 제조 방법 |
US6372640B1 (en) * | 2001-07-31 | 2002-04-16 | Macronix International Co., Ltd. | Method of locally forming metal silicide layers |
KR20050084382A (ko) * | 2002-12-20 | 2005-08-26 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 장치의 제조 방법 및 그 제조 방법으로 얻어진반도체 장치 |
-
2005
- 2005-01-27 JP JP2005019293A patent/JP4473741B2/ja active Active
- 2005-08-26 US US11/211,746 patent/US20060163662A1/en not_active Abandoned
-
2006
- 2006-01-27 CN CNB2006100066428A patent/CN100448008C/zh active Active
-
2008
- 2008-08-18 US US12/193,668 patent/US20080308877A1/en not_active Abandoned
-
2009
- 2009-11-13 US US12/618,402 patent/US8357580B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226931B (zh) * | 2007-01-18 | 2010-06-02 | 国际商业机器公司 | 完全硅化区域以提高性能的结构及其方法 |
CN103000518A (zh) * | 2011-09-09 | 2013-03-27 | 联华电子股份有限公司 | 形成非平面晶体管的方法 |
CN103000518B (zh) * | 2011-09-09 | 2016-12-14 | 联华电子股份有限公司 | 形成非平面晶体管的方法 |
CN103854980A (zh) * | 2012-11-29 | 2014-06-11 | 中国科学院微电子研究所 | 形成半导体器件替代栅的方法以及制造半导体器件的方法 |
CN103854980B (zh) * | 2012-11-29 | 2016-05-11 | 中国科学院微电子研究所 | 形成半导体器件替代栅的方法以及制造半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
US8357580B2 (en) | 2013-01-22 |
US20060163662A1 (en) | 2006-07-27 |
CN100448008C (zh) | 2008-12-31 |
JP4473741B2 (ja) | 2010-06-02 |
US20100062575A1 (en) | 2010-03-11 |
JP2006210555A (ja) | 2006-08-10 |
US20080308877A1 (en) | 2008-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1819200A (zh) | 半导体器件和用于制造半导体器件的方法 | |
CN1320654C (zh) | 具有多样的金属硅化物的半导体元件及其制造方法 | |
CN1235291C (zh) | 半导体器件和半导体器件的制造方法 | |
CN1246909C (zh) | 半导体器件及其制造方法 | |
CN1222986C (zh) | 半导体装置的制造方法和半导体装置 | |
CN100352020C (zh) | 场效应晶体管器件及其制造方法 | |
CN1738060A (zh) | 半导体器件 | |
CN1215554C (zh) | 互补型金属氧化物半导体器件及其制造方法 | |
CN1670965A (zh) | 源极及漏极中聚含掺质金属的晶体管 | |
CN1956219A (zh) | 半导体装置及其制造方法 | |
CN1240131C (zh) | 半导体装置及其制造方法 | |
CN1841771A (zh) | p沟道MOS晶体管、半导体集成电路器件及其制造工艺 | |
CN1282230C (zh) | 半导体装置的制造方法及半导体装置 | |
CN1716542A (zh) | 在半导体装置的多栅极晶体管上形成栅极电极的方法 | |
CN1599961A (zh) | 半导体装置及其制造方法 | |
CN1879209A (zh) | 半导体装置及其制造方法 | |
CN1227745C (zh) | 垂直金属-氧化物-半导体晶体管及其制造方法 | |
CN1828937A (zh) | 单一金属闸极互补式金氧半导体元件 | |
CN1624932A (zh) | 半导体器件 | |
CN1838430A (zh) | Mis半导体器件和互补mis半导体器件 | |
CN1893114A (zh) | 具有铁电膜作为栅极绝缘膜的半导体器件及其制造方法 | |
CN1933158A (zh) | 半导体装置及其制造方法 | |
CN1881614A (zh) | Mos型半导体器件及其制造方法 | |
CN1540757A (zh) | 具应变通道的互补式金氧半导体及其制作方法 | |
CN1828901A (zh) | 半导体大规模集成电路及半导体大规模集成电路制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170801 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211122 Address after: Tokyo Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |