CN1218284A - 集成电路布线工艺 - Google Patents

集成电路布线工艺 Download PDF

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CN1218284A
CN1218284A CN98123994A CN98123994A CN1218284A CN 1218284 A CN1218284 A CN 1218284A CN 98123994 A CN98123994 A CN 98123994A CN 98123994 A CN98123994 A CN 98123994A CN 1218284 A CN1218284 A CN 1218284A
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西普里安·阿莫克·乌泽
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Abstract

在集成电路中通过在半导体衬底的籽晶层上溅射镀膜实现金属布线;淀积光刻胶和光刻;在光刻胶开口处用电镀或化学镀方法淀积金属;剥离剩余光刻胶;和以比刻蚀电镀或化学镀方法淀积的金属快的速率优先刻蚀铜籽晶层的刻蚀方法刻蚀铜籽晶层。

Description

集成电路布线工艺
本发明涉及集成电路中的金属布线生产工艺。本发明尤其涉及用于芯片互连与芯片封装的铜布线工艺。本发明中使用透模(thru-mask)工艺代替镶嵌技术(damascene type technique)来防止大面积金属区的凹陷问题和邻近于较大面积金属区的绝缘体腐蚀问题。
半导体芯片的金属化研究已使用了各种技术。这些技术包括剥离(lift-off)法、透模法、金属反应离子刻蚀(RIE)法和金属与绝缘体的镶嵌法以及以上方法的各种组合。剥离法和透模法对于芯片封装中遇到的大面积情况很有用处。与剥离法和透模法不同，金属反应离子刻蚀法和镶嵌法已被选择成为芯片金属化中基本尺寸(ground rules)小于1微米时的工艺。
在镶嵌工艺中，金属膜淀积到整个构图衬底以填充表面的沟槽和通孔。接下来的过程是去掉多余的金属而使金属表面平整化、隔离并确定布线图形。当用电镀或化学镀工艺进行金属淀积时，要事先在整个构图晶片或衬底表面上镀基底镀层或籽晶层。并且，在基底镀层或籽晶层与绝缘层之间，淀积可提高粘附性和防止导体/绝缘体互连或互扩散的层。
在金属反应离子刻蚀法中，通过刻蚀覆盖金属膜以形成导体图形。然后在金属线和通孔之间的间隙填满绝缘体。在高性能应用中，要对绝缘介质进行平整化以形成平整的金属层。镶嵌工艺与金属反应离子刻蚀法相比，其主要优点之一在于，刻蚀绝缘体常常比刻蚀金属更容易。而且，绝缘体间隙填充和平整化可能会更成问题。然而，最后一层布线层，被称为顶金属(Mlast)，可不需要平面金属/绝缘体层，并且一般情况下会有较少的密纹(dense pitch)。相应的，由于化学机械抛光工艺步骤的低生产率，使用镶嵌工艺并不能为最后的布线层提供明显优势。
而且，最后布线层一般包含非常宽的用于电源总线的金属线和用于引线键合(wirebond)或C4球焊的大焊点。对于化学机械抛光工艺，这些较大的金属结构容易发生凹陷(见图1)。邻近于大金属区的绝缘体的腐蚀也是产量损耗的一个原因，尤其是在较低层发生时。
目前迫切需要的是能够使用包含减蚀法或子蚀法的工艺。例如，用于合适籽晶层上淀积金属膜的透模法。然而，透模工艺最困难的方面是籽晶层的刻蚀。
在芯片封装的布线尺寸中，重要的特征尺寸是纵向约为5至30微米，横向尺寸约为40至200微米。基底镀层或籽晶层厚度一般约为200至600纳米。因此，对于50至100微米的特征尺寸来说，500纳米的损失对产量或性能是无关紧要的。
与封装特征尺寸形成鲜明对比的是，在芯片互连的顶金属层，重要的尺寸是纵向约为500至3000纳米。籽晶层必须比在封装中使用的薄，一般约为30至100纳米。然而在籽晶层刻蚀步骤中，因为金属刻蚀是各向同性的，小尺寸(亚微米级)结构的轮廓比较大尺寸结构的轮廓相应要小，说明见图2。在700纳米的互连结构中，100纳米的损失是对于基本规则的违背，是有害的(见图2)。所以，为了使这种透模方法在芯片布线中有效，尤其在亚微米范围，迫切需要提供一种方法，用来去除籽晶层而又不明显破坏重要镀层结构的轮廓。
本发明目的在于提供一种工艺，允许优先去除基底镀层或籽晶层而又不会明显地刻蚀或破坏重要的镀层区。本发明目的还在于提供一种工艺，其中，在金属淀积之前首先形成所需要的籽晶层。
更重要的是，本发明涉及建立互连结构的方法，以通过透模法满足高性能超大规模集成电路芯片布线基本规则的要求。本发明中芯片布线金属包括电镀或化学镀淀积的金属：铜，镍，金，铬，钴，铑，铝，铂，银，钯，和他们的合金。
本发明中，具有或不具有半导体器件的适当的衬底上覆盖一层晶粒精细、应力高和高度定向的籽晶层，如通过金属蒸发或金属溅射形成的约20至100纳米的铜层。接着在金属籽晶层上面淀积光刻胶，刻光刻胶图形确定导电路径。通过电镀或化学镀方法，铜或其它适当金属被淀积在光刻胶定义出的凹陷处。剥离光刻胶暴露下面的籽晶层。未被电镀的籽晶层被选择性的刻蚀而不会明显破坏纵横比变化大的金属区的电镀轮廓。
本发明的其它目的和优点通过以下详细描述对熟练技术人员而言将更明显。其中，它简明地通过执行本发明构思的最好模式的图示来阐明本发明的优选实施方式。可以预见，本发明能够有其它不同的实施方式，在许多明显的地方其细节能够进行修改，而不偏离本发明。相应的，本发明被认为是示意性的说明，而不是限制性的说明。
图1说明现有技术在使用化学物理抛光工艺时产生凹陷的工艺问题。
图2说明现有技术在刻蚀工艺中产生的工艺问题，涉及了宽度不同的结构，其结果为高度有较大的差别和结构的破坏。
图3-6是根据本发明的步骤序列图解。
根据本发明，薄的铜籽晶层2(见图3)被溅射到半导体衬底1上。一般半导体衬底包含硅和Ⅲ-Ⅴ族半导体。使用100℃以下的温度，最好低于60℃，例如约50℃至-10℃，将铜溅射到半导体衬底上。溅射最好在惰性气体环境中进行，例如氩气。溅射的目的在于产生一层约20至100纳米，最好是30至70纳米，典型值为50纳米的籽晶层。溅射产生的铜籽晶层其细微晶粒约为300埃或更小，较好的是50至300埃，最好是100至150埃。籽晶的应力较高，如至少为5×109达因，较好的是5×109至2×1010达因，最好是8×109至1×1010达因，本发明重要的成功之处就在于获得这种细微晶粒的高应力膜和高定向的<111>籽晶层，同时，使相对于随后刻蚀电镀铜而优先刻蚀籽晶层成为可能。
下一步，光刻胶3被淀积到铜籽晶层上，然后使用传统刻版技术图形化。所有业界知名的光刻胶材料都可以使用。光刻胶一般通过旋转法或喷溅法使用。所用的光刻胶可以是正光刻胶也可以是负光刻胶。正光刻胶材料当暴露于成象辐射下时，能够在溶剂中溶解，而未曝光的光刻胶不会溶解。负光刻胶材料，当暴露于成象辐射下时，聚合和/或不溶解。光刻胶材料的一个实例是，基于酚醛的聚合物。一个特别的例子是例如希普利AZ-1350(Shipley AZ-1350)是一种间-甲酚酚醛聚合物。这是一种正光刻胶，其中包含重氮酮，如二重氮基-1-萘酚-5-磺酸酯(2-diazo-1-naphthol-5-sulfonic acid ester)。
在光刻胶形成图形后，通过电镀或化学镀方法将金属如铜4镀在光刻胶图形的开口处(见图4)。其它金属如金，镍，钴，铑，铝，钯，银和/或铂以及他们的合金，也能用来代替铜或作为铜的添加物质。电镀或化学镀的金属镀层晶粒相对较大，例如约大于1微米，并且应力相对低。例如，电镀铜其晶粒相对较大，大于1微米，应力较低，在-5×108(压应力)到+5×108达因每平方厘米的范围之间。金属层4一般约为0.5至3微米厚。铜籽晶层使能够在光刻胶的开口处而不是其顶面上形成镀层。可以在酸性的铜镀液中镀铜。镀液包括二价铜离子源材料和无机矿物酸，如硫酸。二价铜离子的首选材料是五水硫酸铜。一般的铜镀液中包含的二价铜离子源材料浓度约为10-2到0.5摩尔。加无机酸到镀液中，使其离子浓度约为5到9摩尔，更一般的值是1.5到2.5摩尔。
此外，镀液可包含其它添加剂，如含有氯离子的抛光剂，例如其量约为30-70ppm，和有机抛光剂如聚烷基乙二醇。有机抛光剂添加量通常约为镀液重量的0.5％到1.25％。首选的是聚烷基乙二醇，包括聚乙烯乙二醇和聚丙烯乙二醇。更一般的聚乙烯乙二醇和聚丙烯乙二醇其分子量约为400到1000，更典型的是600至700。而且，也可以使用多种组分的有机添加剂，如那些包含聚烷基乙二醇和含硫的有机化合物，如苯硫酸、藏红类染色剂和有机硫化脂肪化合物(包含二硫化物)和/或含氧化合物如酰胺。酰胺的实例包括丙烯酰胺和丙基酰胺。
在镀层工艺中，被镀结构和可溶解的铜阳极被放在镀层液中。铜的籽晶层作为阴极，在这上面用电镀法淀积铜。用24℃时Cu+2/Cu参考电极测量，电压一般约为-0.05至-0.3伏，更一般的值约为-0.5至-0.2伏。
电镀过程将持续到布线层达到所需厚度。同样，淀积金属也可使用化学镀法。
接下来，剩余的光刻胶层在能溶解它的溶剂中除去。见图5
在除去光刻胶材料后，暴露的铜籽晶层5那部分必须被除去。而且，同时在一定范围内不刻蚀或不影响电镀或化学镀的镀层金属，如铜。换句话说，用相对于电镀或化学镀的镀层金属优先刻蚀籽晶层铜的方法，必须用刻蚀剂除去暴露的铜籽晶层5。依照本发明中发现的特殊的腐蚀剂，将导致在电镀区之间除去铜籽晶层，而不会严重腐蚀该区，其中他们自己是一种包含过硫酸氨和一种商业名称为Alkanol ACN和杜邦公司生产的MERPOL-SH的有效表面活化剂。这些表面活化剂包含体积约25％到50％的脂肪族胺类乙氧基化合物、体积约10至30％的异乙醇，其余是水。在混合物中含有的Alkanol ACN或MERPOL-SH的量一般约为100至800ppm，一般约为250ppm。此外，过硫酸氨一般约为0.5至10％。钾或钠的过硫酸盐或他们的氢化硫酸盐可以代替过硫酸氨。
刻蚀剂也含有少量如1至5％体积的酸，例如HCl和/或稳定的过氧化氢。
以上的刻蚀混合物优先刻蚀溅射的铜籽晶层2，与电镀的铜层相比，其速率为6∶1。例如厚度为50纳米的籽晶层可在0.7微米×0.7微米的铜线间除去，而不会严重减小线的横截面。
而且，以上表面活性剂的存在使铜钝化并使其表面具有疏水性，所以能防止铜表面生锈或被腐蚀。同时刻蚀剂成分也防止表面粒子的再沉淀。
以下非限定性实例是对本发明的进一步说明。
实例
Alkanol ACN溶解于去离子水，形成2000ppm的贮备溶液。搅拌约30分钟使Alkanol ACN在去离子水中充分溶解。准备5克/升的过硫酸氨去离子水溶液，然后用硫酸酸化使PH为4。Alkanol ACN贮备溶液添加到酸化的过硫酸氨溶液，以形成250ppm的Alkanol ACN溶液。溶液在使用前搅拌20分钟。
在合适的溶液中除去电镀衬底的光刻胶。下一步，在流动的冷去离子水中充分清洗衬底。然后，将衬底浸入盛有以上Alkanol ACN/过硫酸氨溶液的容器中刻蚀，并伴随适当的搅动。5分钟后取出。然后在快速流动的去离子水中清洗衬底。
当Alkanol ACN浓缩液被加至500ppm时，在过硫酸氨溶液中铜的腐蚀速度将降低。
通过现有描述阐明了本发明。另外，它揭示的仅是本发明的优选实施例。通过以上叙述，我们可以理解本发明能够应用于与以上的教导和/或相关工艺的技术或知识相称的不同的其它组合、修正和环境中，也能够以这里表达的本发明的概念为基础进行改变和修正。在这里和以上描述的实施例的目的还有，解释已知的实施本发明的最好模式和使本发明工艺中的其它技术能够在这里或别的地方利用，以及某些特殊应用或本发明的应用所需要的各种改变。相应的，以上描述的目的并不限制于本发明在这里揭示的方式。它的目的也在于说明它的附加权利要求所包括的可选择性实施例。

Claims (16)

1．用于提供集成电路中金属线的方法，包括在半导体衬底上溅射镀敷铜以提供约20至100nm的铜籽晶层；在上述铜籽晶层上淀积光刻胶和图形化所述光刻胶；
在图形化光刻胶开口处裸露的铜籽晶层上电镀或化学镀金属；除去剩余的光刻胶；和使用比刻蚀电镀或化学镀的金属快的速率优先刻蚀上述铜籽晶层的刻蚀剂，刻蚀没有被电镀或化学镀的金属覆盖而暴露的铜籽晶层。
2．权利要求1的方法，其特征在于上述铜籽晶层的晶粒约小于300埃并且应力最小约为5×109达因；
3．权利要求1的方法，其特征在于上述铜籽晶层的晶粒约50至300埃并且应力约为5×109至2×1010达因/厘米2。
4．权利要求1的方法，其特征在于上述溅射镀敷执行温度低于100℃而不需要退火；
5．权利要求1的方法，其特征在于上述溅射镀敷执行温度低于60℃而不需要退火；
6．权利要求1的方法，其特征在于上述金属是铜；
7．权利要求1的方法，其特征在于电镀或化学镀层金属的厚度约为0.5至3μm；
8．权利要求1的方法，其特征在于上述刻蚀剂包括过硫酸盐；
9．权利要求1的方法，其特征在于上述刻蚀剂最小以3倍于电镀或化学镀层金属被刻蚀的速率优先刻蚀上述铜籽晶层；
10．权利要求6的方法，其特征在于上述刻蚀剂还同时进行上述铜的钝化和防止粒子重淀积到刻蚀表面上；
11．权利要求8的方法，其特征在于上述刻蚀剂还包括脂肪胺乙氧基化合物和异丁烯醇；
12．权利要求9的方法，其特征在于上述刻蚀剂还包括1-5％的HCl；
13．权利要求9的方法，其特征在于上述刻蚀剂还包括稳定的1-5％的过氧化氢；
14．权利要求1的方法，其特征在于上述金属是铜，镍，金，铬，钴，铑，铝，铂，银，钯和它们的合金组成的组中的至少一种金属；
15．权利要求1的方法，其特征在于上述金属是电镀铜；
16．权利要求1的方法，其特征在于上述刻蚀剂包括过硫酸铵。
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CN1110080C (zh) 2003-05-28
JP3184803B2 (ja) 2001-07-09
TW471081B (en) 2002-01-01
KR19990045243A (ko) 1999-06-25
US6117784A (en) 2000-09-12
SG71867A1 (en) 2000-04-18
KR100279323B1 (ko) 2001-02-01

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