CN1217388C - 等离子体处理装置及排气环 - Google Patents

等离子体处理装置及排气环 Download PDF

Info

Publication number
CN1217388C
CN1217388C CN018160131A CN01816013A CN1217388C CN 1217388 C CN1217388 C CN 1217388C CN 018160131 A CN018160131 A CN 018160131A CN 01816013 A CN01816013 A CN 01816013A CN 1217388 C CN1217388 C CN 1217388C
Authority
CN
China
Prior art keywords
exhaust ring
plasma processing
exhaust
holes
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN018160131A
Other languages
English (en)
Chinese (zh)
Other versions
CN1461494A (zh
Inventor
小笠原正宏
加藤和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1461494A publication Critical patent/CN1461494A/zh
Application granted granted Critical
Publication of CN1217388C publication Critical patent/CN1217388C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
CN018160131A 2000-11-10 2001-11-02 等离子体处理装置及排气环 Expired - Fee Related CN1217388C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP343178/2000 2000-11-10
JP2000343178A JP4602532B2 (ja) 2000-11-10 2000-11-10 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN1461494A CN1461494A (zh) 2003-12-10
CN1217388C true CN1217388C (zh) 2005-08-31

Family

ID=18817585

Family Applications (1)

Application Number Title Priority Date Filing Date
CN018160131A Expired - Fee Related CN1217388C (zh) 2000-11-10 2001-11-02 等离子体处理装置及排气环

Country Status (7)

Country Link
US (2) US6878234B2 (enExample)
JP (1) JP4602532B2 (enExample)
KR (1) KR100890654B1 (enExample)
CN (1) CN1217388C (enExample)
AU (1) AU2002212705A1 (enExample)
TW (1) TW508697B (enExample)
WO (1) WO2002039493A1 (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Cvd装置とこれを用いた処理方法
US20040129218A1 (en) * 2001-12-07 2004-07-08 Toshiki Takahashi Exhaust ring mechanism and plasma processing apparatus using the same
JP4141234B2 (ja) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 プラズマ処理装置
USD494551S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD494552S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD496008S1 (en) 2002-12-12 2004-09-14 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
US6907841B2 (en) * 2002-12-27 2005-06-21 Korea Institute Of Science And Technology Apparatus and method for synthesizing spherical diamond powder by using chemical vapor deposition method
US6844260B2 (en) * 2003-01-30 2005-01-18 Micron Technology, Inc. Insitu post atomic layer deposition destruction of active species
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
US7001491B2 (en) * 2003-06-26 2006-02-21 Tokyo Electron Limited Vacuum-processing chamber-shield and multi-chamber pumping method
JP2007073539A (ja) * 2003-12-18 2007-03-22 Tokyo Electron Ltd 成膜方法およびプラズマ発生方法、基板処理装置
WO2005083766A1 (ja) * 2004-02-27 2005-09-09 Hitachi Kokusai Electric Inc. 基板処理装置
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
CN1983518B (zh) * 2004-06-21 2011-06-08 东京毅力科创株式会社 等离子体处理装置和方法
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
KR101248691B1 (ko) * 2004-06-21 2013-04-03 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置
US8608851B2 (en) * 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
CN100416757C (zh) * 2005-12-07 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置排气环
US7699957B2 (en) * 2006-03-03 2010-04-20 Advanced Display Process Engineering Co., Ltd. Plasma processing apparatus
JP4885585B2 (ja) * 2006-03-23 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4885586B2 (ja) * 2006-03-23 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置
US8141514B2 (en) 2006-03-23 2012-03-27 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, and storage medium
US8104428B2 (en) 2006-03-23 2012-01-31 Tokyo Electron Limited Plasma processing apparatus
KR100994469B1 (ko) * 2006-04-04 2010-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치의 배플 구조
US7884026B2 (en) * 2006-07-20 2011-02-08 United Microelectronics Corp. Method of fabricating dual damascene structure
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
CN101541140B (zh) * 2008-03-17 2012-08-22 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理装置及其屏蔽环
US7987814B2 (en) 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
KR100992392B1 (ko) * 2008-05-09 2010-11-05 주식회사 디엠에스 플라즈마 반응장치
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
JP5323628B2 (ja) * 2009-09-17 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置
WO2011052463A1 (ja) * 2009-11-02 2011-05-05 東レ株式会社 プラズマcvd装置、および、シリコン薄膜の製造方法
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5782293B2 (ja) * 2011-05-10 2015-09-24 東京エレクトロン株式会社 プラズマ生成用電極およびプラズマ処理装置
JP1438745S (enExample) * 2011-09-20 2015-04-06
JP1438319S (enExample) 2011-09-20 2015-04-06
USD709536S1 (en) * 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709537S1 (en) * 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709538S1 (en) * 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709539S1 (en) * 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
US20130153149A1 (en) * 2011-12-20 2013-06-20 Intermolecular, Inc. Substrate Processing Tool with Tunable Fluid Flow
CN103377979B (zh) * 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
US10103018B2 (en) 2012-07-31 2018-10-16 Semes Co., Ltd. Apparatus for treating substrate
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN103794459B (zh) * 2012-10-29 2016-04-06 中微半导体设备(上海)有限公司 用于等离子处理腔室的气体喷淋头及其涂层形成方法
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104112639B (zh) * 2013-04-22 2016-09-28 中微半导体设备(上海)有限公司 一种实现反应气体快速切换的等离子体反应室及其方法
KR101445226B1 (ko) * 2013-04-23 2014-09-29 피에스케이 주식회사 배기 링 어셈블리 및 이를 포함하는 기판 처리 장치
JP6220183B2 (ja) * 2013-08-07 2017-10-25 株式会社ディスコ プラズマエッチング装置
JP6151605B2 (ja) * 2013-08-14 2017-06-21 株式会社ディスコ プラズマエッチング装置
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
JP6656809B2 (ja) * 2015-02-20 2020-03-04 宏興 王 マイクロ波プラズマcvd装置
JP2017025389A (ja) * 2015-07-24 2017-02-02 株式会社ユーテック プラズマcvd装置及び成膜方法
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
JP1584784S (enExample) * 2017-01-31 2017-08-28
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
KR102414617B1 (ko) * 2017-08-17 2022-07-01 삼성전자주식회사 기판 처리 장치 및 이의 세정 방법
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
CN108303216B (zh) * 2018-01-02 2020-03-06 京东方科技集团股份有限公司 一种气体检测装置
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN114300336B (zh) * 2021-12-28 2024-02-23 拓荆科技股份有限公司 一种等离子体反应器
CN116031131B (zh) * 2022-11-25 2025-02-07 拓荆科技股份有限公司 抽气环结构及等离子体处理装置
CN119121183A (zh) * 2024-10-31 2024-12-13 拓荆科技(上海)有限公司 抽气环件、工艺腔体、薄膜沉积设备及抽气环件安装方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
US5522932A (en) * 1993-05-14 1996-06-04 Applied Materials, Inc. Corrosion-resistant apparatus
US5891253A (en) * 1993-05-14 1999-04-06 Applied Materials, Inc. Corrosion resistant apparatus
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
TW323387B (enExample) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JPH1027784A (ja) * 1996-05-08 1998-01-27 Tokyo Electron Ltd 減圧処理装置
US6071372A (en) * 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6106630A (en) * 1997-08-07 2000-08-22 Applied Materials, Inc. Ceramic-coated heating assembly for high temperature processing chamber
US6051100A (en) * 1997-10-24 2000-04-18 International Business Machines Corporation High conductance plasma containment structure
JP3350433B2 (ja) * 1998-02-16 2002-11-25 シャープ株式会社 プラズマ処理装置
JPH11243079A (ja) * 1998-02-24 1999-09-07 Toshiba Corp プラズマ処理装置
JP4217299B2 (ja) * 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
KR100265288B1 (ko) * 1998-04-22 2000-10-02 윤종용 반도체소자 제조용 식각장치의 배플
US6461970B1 (en) * 1998-06-10 2002-10-08 Micron Technology, Inc. Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6444083B1 (en) * 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US6790242B2 (en) * 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
US7128804B2 (en) * 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
KR100431660B1 (ko) * 2001-07-24 2004-05-17 삼성전자주식회사 반도체 장치의 제조를 위한 건식 식각 장치
US20040129218A1 (en) * 2001-12-07 2004-07-08 Toshiki Takahashi Exhaust ring mechanism and plasma processing apparatus using the same
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system

Also Published As

Publication number Publication date
AU2002212705A1 (en) 2002-05-21
US7255773B2 (en) 2007-08-14
KR20030057551A (ko) 2003-07-04
JP2002151471A (ja) 2002-05-24
KR100890654B1 (ko) 2009-03-26
CN1461494A (zh) 2003-12-10
JP4602532B2 (ja) 2010-12-22
WO2002039493A1 (en) 2002-05-16
US6878234B2 (en) 2005-04-12
TW508697B (en) 2002-11-01
US20040025788A1 (en) 2004-02-12
US20050126488A1 (en) 2005-06-16

Similar Documents

Publication Publication Date Title
CN1217388C (zh) 等离子体处理装置及排气环
JP5211332B2 (ja) プラズマcvd装置、dlc膜及び薄膜の製造方法
JP3192370B2 (ja) プラズマ処理装置
TWI559357B (zh) Electrode generation electrode and plasma processing device
CN1501452A (zh) 等离子加工装置
US8671882B2 (en) Plasma processing apparatus
TWI478203B (zh) A plasma processing device and its constituent parts
JP2003197615A (ja) プラズマ処理装置およびそのクリーニング方法
JP4286576B2 (ja) プラズマ処理装置
US20090314435A1 (en) Plasma processing unit
JP4754609B2 (ja) 処理装置およびそのクリーニング方法
CN100570818C (zh) 等离子体处理装置
US20060011213A1 (en) Substrate transfer device and cleaning method thereof and substrate processing system and cleaning method thereof
JP3195535B2 (ja) プラズマエッチング用電極及びプラズマエッチング装置
TWI722495B (zh) 電漿處理裝置
JP2006253733A (ja) プラズマ処理装置およびそのクリーニング方法
JP4902054B2 (ja) スパッタリング装置
WO2023275958A1 (ja) 内壁部材の再生方法
JP2006310883A (ja) プラズマ処理装置およびそのクリーニング方法
WO2023228232A1 (ja) 内壁部材の再生方法
JPH06120140A (ja) 半導体製造方法および装置
JPH0379026A (ja) ドライエッチング装置
JPH0590229A (ja) プラズマ処理装置
JPH03211726A (ja) プラズマ処理装置
JP2000188280A (ja) プラズマプロセス装置及びプラズマプロセス

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050831

Termination date: 20181102

CF01 Termination of patent right due to non-payment of annual fee