Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32816—Pressure
  • H01J37/32834—Exhausting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

• the present invention relates to a plasma processing apparatus.
• a plasma processing apparatus in which an upper electrode and a lower electrode are arranged opposite to each other in an airtight processing chamber has been widely used.
• high-frequency power is applied to the upper electrode to convert the processing gas introduced into the processing chamber into plasma, and a predetermined plasma process is applied to the object to be processed. It is configured to apply.
• an exhaust ring is attached between the side surface of the lower electrode and the inner wall surface of the processing vessel so as to surround the periphery of the lower electrode. Is separated into a processing space in which is disposed and an exhaust path communicating with the exhaust mechanism.
• the exhaust ring has a plurality of through holes, and the penetrator L connects the processing space and the exhaust path. Therefore, during processing, the gas in the processing space is guided to the exhaust path through the through-hole, and the gas in the processing space and the exhaust space are exhausted. The conductance in the air path is maintained at a predetermined state, and the processing space can be exhausted stably. The plasma is confined in the processing space, and a y-ground area is secured by the inner wall surface of the processing vessel and the exhaust ring maintained at the ground potential.
• the exhaust ring is made of metal such as aluminum alloy to keep it at the ground potential, and is damaged by plasma generated in the processing vessel.
• an object of the present invention is to provide a plasma processing apparatus provided with an exhaust ring having high plasma resistance and capable of suppressing abnormal discharge. It is in.
• a processing chamber a first electrode on which an object to be processed can be placed in the processing chamber, and a first electrode in the processing chamber.
• a second electrode disposed to face, a processing gas supply system capable of introducing a processing gas into the processing chamber, an exhaust system capable of evacuating the processing chamber, and at least one of the first and second electrodes
• a high-frequency power supply system for applying a high-frequency power to convert the processing gas into plasma to perform predetermined plasma processing on the object to be processed, and to provide a new and improved plasma processing apparatus.
• a new and improved exhaust ring provided between the plasma processing space and the exhaust space in the processing chamber is provided.
• an invention according to a first aspect of the present invention is a plasma processing apparatus, wherein a plasma processing space in a processing chamber and an exhaust space are defined around the first electrode.
• the exhaust ring is provided with a through hole and an uneven portion.
• the invention according to a second aspect of the present invention is a plasma processing apparatus, wherein a plurality of through holes are formed around the first electrode so as to partition a plasma processing space and an exhaust space in the processing chamber.
• the formed exhaust ring is provided, and an insulating coating is applied to a surface of the exhaust ring on the side of the plasma processing space.
• an invention according to a third aspect of the present invention is an exhaust ring, wherein a through hole and an uneven portion are formed.
• the invention according to a fourth aspect of the present invention is characterized in that the exhaust ring is provided with an insulating coating on the surface on the plasma processing space side. More specifically, the feature of the present invention is as follows. May be included.
• the number of the through holes may be larger than the number of the stop holes.
• the insulating coating may be at least one of Y 2 0 3 and AI 2 0 3.
• the processing chamber-side opening of the through hole and the Z or the blind hole may have a wide opening formed with a paper. According to the configuration of the present invention, since not only the through-hole but also the uneven portion is formed in the exhaust ring, plasma leakage can be suppressed and a ground area can be secured. Also, by applying an insulating coating, plasma leakage can be more effectively suppressed.
• Y 2 O 3 and AI 2 0 3 has a high resistance to plasma erosion resistance, if these were the insulation to be covered, hardly caused damage in the processing container, metal contamination Ya Hatsu ⁇ is reduced, improving the yield At the same time, the frequency of maintenance for the processing equipment can be reduced. If the opening on the processing chamber side of the hole is tapered to a wide mouth, the ground area can be further secured, and the inner diameter of the hole is reduced even if the deposits generated during processing adhere to the opening on the processing chamber side. The time required for maintenance can be extended, and the maintenance cycle can be extended.
• FIG. 1 is a schematic sectional view showing an etching apparatus to which the present invention can be applied.
• 2 (a) is a plan view of the exhaust ring according to the embodiment of the present invention as viewed from the processing space side, and y and (b) are cross-sectional views taken along line AA.
• FIG. 3 is a cross-sectional view of a modified example of the exhaust ring according to the embodiment of the present invention.
• FIG. 4 is a cross-sectional view of an exhaust ring according to another embodiment of the present invention.
• FIG. 5 is a cross-sectional view of an exhaust ring according to another embodiment of the present invention.
• the processing chamber 100 includes a ceiling 110 and a substantially cylindrical conductive container 120 with an open top.
• the ceiling 110 is removably fixed to the container 120 by a locking mechanism 130 and can be opened and closed freely.
• Ceiling section 1 An upper electrode 112 is arranged at 10 so as to face the lower electrode 122.
• the upper electrode 112 has a plurality of electrodes for discharging a processing gas to the plasma processing space 102.
• the gas discharge holes 1 1 2a are formed.
• the gas supply source 140 is connected to a gas supply source 140 through a gas supply path 114. Therefore, the processing gas is supplied from the gas supply source 140 to the plasma processing space 102 via the discharge holes 112a.
• An exhaust ring 126 is provided below the lower electrode 122. The exhaust ring 126 separates the plasma processing space 102 from the exhaust space 104. As will be described in detail later, the exhaust ring 126 has a plurality of through holes 126a and a stop hole (non-through hole) 126b. The plasma processing space 102 above the exhaust ring 126 and the exhaust space 104 below the exhaust ring 126 are connected by the through hole 126a.
• the gas in the plasma processing space 102 passes through the through-hole 126a of the exhaust ring 126, passes through the opening / closing valve 150, and the exhaust molecular adjustment valve 1552, and passes through the turbo molecular pump 1524. It is evacuated as appropriate.
• the high-frequency power output from the high-frequency power supply 160 is applied to the lower electrode 122 via the matching unit 162.
• the high-frequency power output from the high-frequency power supply 164 is applied to the upper electrode 112 via the matching unit 166.
• the processing gas introduced into the processing chamber 100 is turned into plasma, and the wafer W is subjected to a predetermined etching process by the plasma.
• the plasma processing space 1 0 2 of the vessel 1 2 0 inner wall, Y 2 0 3 deposition shield 1 2 4 coating, such as is applied is disposed on the surface.
• a conductive O-ring 132 is inserted between the ceiling 110 and the container 120.
• a grounding path is formed from the upper electrode 112 through the container 120, and the conductive O-ring 132 is part of the grounding path.
• FIG. 2A is a plan view of the exhaust ring 126 viewed from the processing space side.
• FIG. 2B is a cross-sectional view of the exhaust ring 126 taken along the line A-A.
• the exhaust ring 126 has a plurality of radially extending through holes 126a.
• One through three of the through holes 1 26a are sealed by attaching a sealing member to the exhaust space 104 side.
• the sealed hole forms a stop hole 126b that opens to the plasma processing space 102 side.
• a napton tape 126c is used here.
• the ground area can be increased by reducing the number of penetrating mosquitoes L 126a and forming a non-penetrating blind hole 126b.
• Y 2 0 3 coating 1 2 6 d is applied as an insulating coating on the processing space side of the surface of the exhaust ring 1 2 6. ⁇ 20 3 coat 1 2 6 d thick Here, it is 50 to 1 OO jtim.
• Y 2 0 3 is plasma-resistant erotic - has high John resistance, hardly occurs damage in the processing container, metal contamination and dust is reduced. Therefore, the yield can be improved, and at the same time, the frequency of maintenance for the device can be reduced.
• the stop hole 1 26 b is not limited to the above.
• the exhaust ring 1 26 formed so that all the holes are the through holes 1 26 a is provided with the through holes 1 26 b.
• a through-hole may be made only in part a, and the blind hole 1 26 may be made by attaching a plate of another member without a hole in part b.
• an exhaust ring provided with through holes 1 26a and blind holes 1 26b from the beginning may be used by integral molding or cutting. In order to secure a surface area for the ground, it is preferable to increase the inner area of the blind hole as much as possible.
• FIG. 4 is a cross-sectional view of an exhaust ring according to another embodiment.
• This embodiment is characterized in that the taper portion 126 e is formed so that the opening on the processing chamber side of the through hole 126 a and the stopper L 126 b becomes wide. .
• Other configurations are the same as those of the above-described embodiment.
• a through hole 126a and an uneven portion 126f are formed.
• the uneven portion 126 f has a diameter of about 12 of the through hole 126 a and a non-through hole 126 e having a depth of about 15 by plasma processing. It is formed by forming a large number on the space side. Compared to the non-through hole 1 26 b shown in Figs. 2 and 3, the diameter and depth are smaller, but the number of holes is increased to secure the desired ground area. .
• the processing space side of the surface of the exhaust ring 1 2 6, the same Y 2 0 3 coating 1 2 6 d in the embodiments described above is applied.
• the surface area on the processing space side has a concavo-convex shape, so that the ground area can be increased, and the non-through hole 126e has a shallow depth, which facilitates processing.
• an uneven portion 126g having a step-like uneven shape is formed instead of the uneven portion 126f of FIG. 5 (a).
• Other configurations are the same as those in FIG. 5 (a).
• the same effect as in the embodiment shown in FIG. 5 (a) is obtained.
• a taper portion 126e is formed so that the opening of the through hole 126a on the processing chamber side is wide.
• the uneven portion 126 g having the step-like uneven shape may have a smooth curve.
• the present invention is also applicable to those.
• the shape of the through hole and the blind hole in the plan view is a circular round hole.
• the present invention is not limited to this, and may be a long hole or a short shape (slit shape). You may.
• the example in which the number of the blind holes is set to 1Z3 of the total number of the through holes is described as an example, but the present invention is not limited to this.
• the present invention is not limited to the above parallel plate type apparatus, but can be applied to various processing apparatuses such as a magnetron type plasma etching apparatus and a plasma CVD apparatus.
• the present invention by providing the exhaust ring with the through-holes and the uneven portions, it is possible to suppress plasma leakage and increase the ground area, thereby suppressing abnormal discharge. As a result, damage to the object to be processed can be reduced, the yield can be improved compared to the past, and damage to the inner wall of the processing chamber and the exhaust ring can also be reduced. Further, by applying an insulating coating such as Y 2 0 3 in the exhaust ring, hardly caused damage in the processing container, metal contamination and dust is reduced, and at the same time it is possible to improve the yield, the frequency of maintenance Can be reduced.
• the through hole and the stopper hole into a tapered shape with a wide opening on the processing chamber side, even if the deposits generated during processing adhere to the opening on the processing chamber side, the deposits on the tapered surface. Sequentially Therefore, the time required for the inner diameter of the hole to be reduced can be extended, the continuous processing time and the maintenance cycle of the exhaust ring can be extended, and the throughput can be improved.
• the present invention is applicable to a plasma processing apparatus used in a semiconductor device manufacturing process and an exhaust ring provided in the plasma processing apparatus.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Plasma Technology (AREA)
• Drying Of Semiconductors (AREA)
• Chemical Vapour Deposition (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)

Priority Applications (4)

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Related Child Applications (2)

Publications (1)

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Cited By (2)

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Citations (4)

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• 2000
  • 2000-11-10 JP JP2000343178A patent/JP4602532B2/ja not_active Expired - Fee Related
• 2001
  • 2001-11-02 KR KR1020037006324A patent/KR100890654B1/ko not_active Expired - Fee Related
  • 2001-11-02 AU AU2002212705A patent/AU2002212705A1/en not_active Abandoned
  • 2001-11-02 WO PCT/JP2001/009634 patent/WO2002039493A1/ja not_active Ceased
  • 2001-11-02 US US10/416,235 patent/US6878234B2/en not_active Expired - Lifetime
  • 2001-11-02 CN CN018160131A patent/CN1217388C/zh not_active Expired - Fee Related
  • 2001-11-08 TW TW090127746A patent/TW508697B/zh not_active IP Right Cessation
• 2005
  • 2005-02-02 US US11/047,595 patent/US7255773B2/en not_active Expired - Fee Related

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