CN1211833C - 具有无源元件的半导体器件及其制备方法 - Google Patents
具有无源元件的半导体器件及其制备方法 Download PDFInfo
- Publication number
- CN1211833C CN1211833C CNB018144950A CN01814495A CN1211833C CN 1211833 C CN1211833 C CN 1211833C CN B018144950 A CNB018144950 A CN B018144950A CN 01814495 A CN01814495 A CN 01814495A CN 1211833 C CN1211833 C CN 1211833C
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- Prior art keywords
- layer
- capacitor
- dielectric layer
- copper layer
- resistor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title description 7
- 239000002184 metal Substances 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000003990 capacitor Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 150000001879 copper Chemical class 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 95
- 238000005530 etching Methods 0.000 description 14
- 238000009413 insulation Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/642,680 | 2000-08-21 | ||
US09/642,680 US6500724B1 (en) | 2000-08-21 | 2000-08-21 | Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1478294A CN1478294A (zh) | 2004-02-25 |
CN1211833C true CN1211833C (zh) | 2005-07-20 |
Family
ID=24577572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018144950A Expired - Fee Related CN1211833C (zh) | 2000-08-21 | 2001-08-17 | 具有无源元件的半导体器件及其制备方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6500724B1 (zh) |
EP (1) | EP1314190A2 (zh) |
JP (1) | JP4937489B2 (zh) |
KR (1) | KR100794155B1 (zh) |
CN (1) | CN1211833C (zh) |
AU (1) | AU2001283445A1 (zh) |
TW (1) | TW503575B (zh) |
WO (1) | WO2002017367A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100413094C (zh) * | 2005-08-09 | 2008-08-20 | 中国科学院物理研究所 | 一种基于碘化铝的电解质及其应用 |
CN105226044A (zh) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | 集成电路及形成集成电路的方法 |
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US7531417B2 (en) * | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
US8421158B2 (en) | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
US6303423B1 (en) | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US8178435B2 (en) | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US20010013660A1 (en) * | 1999-01-04 | 2001-08-16 | Peter Richard Duncombe | Beol decoupling capacitor |
DE19956904C2 (de) * | 1999-11-26 | 2003-08-07 | United Monolithic Semiconduct | Integrierter Amplitudenbegrenzer bzw. Limiter und Verfahren zur Herstellung eines integrierten Limiters |
KR100350675B1 (ko) * | 2000-01-26 | 2002-08-28 | 삼성전자 주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
US6548389B2 (en) * | 2000-04-03 | 2003-04-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6500724B1 (en) * | 2000-08-21 | 2002-12-31 | Motorola, Inc. | Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material |
US6596579B1 (en) * | 2001-04-27 | 2003-07-22 | Lsi Logic Corporation | Method of forming analog capacitor dual damascene process |
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US20040012043A1 (en) * | 2002-07-17 | 2004-01-22 | Gealy F. Daniel | Novel dielectric stack and method of making same |
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US7022246B2 (en) * | 2003-01-06 | 2006-04-04 | International Business Machines Corporation | Method of fabrication of MIMCAP and resistor at same level |
KR100539198B1 (ko) * | 2003-03-10 | 2005-12-27 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조 방법 |
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JP3180768B2 (ja) * | 1998-07-14 | 2001-06-25 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
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TW389993B (en) * | 1998-11-18 | 2000-05-11 | United Microelectronics Corp | Method for producing thin film resistance of dual damascene interconnect |
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US6259128B1 (en) * | 1999-04-23 | 2001-07-10 | International Business Machines Corporation | Metal-insulator-metal capacitor for copper damascene process and method of forming the same |
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JP3967544B2 (ja) * | 1999-12-14 | 2007-08-29 | 株式会社東芝 | Mimキャパシタ |
AU2001231203A1 (en) | 2000-01-28 | 2001-08-07 | The Board Of Trustees Of The University Of Arkansas | Rc terminator and production method therefor |
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-
2000
- 2000-08-21 US US09/642,680 patent/US6500724B1/en not_active Expired - Lifetime
-
2001
- 2001-08-17 WO PCT/US2001/025875 patent/WO2002017367A2/en not_active Application Discontinuation
- 2001-08-17 CN CNB018144950A patent/CN1211833C/zh not_active Expired - Fee Related
- 2001-08-17 KR KR1020037002545A patent/KR100794155B1/ko not_active IP Right Cessation
- 2001-08-17 AU AU2001283445A patent/AU2001283445A1/en not_active Abandoned
- 2001-08-17 EP EP01962250A patent/EP1314190A2/en not_active Withdrawn
- 2001-08-17 JP JP2002521340A patent/JP4937489B2/ja not_active Expired - Fee Related
- 2001-08-20 TW TW090120390A patent/TW503575B/zh not_active IP Right Cessation
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2002
- 2002-09-13 US US10/243,587 patent/US6825092B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100413094C (zh) * | 2005-08-09 | 2008-08-20 | 中国科学院物理研究所 | 一种基于碘化铝的电解质及其应用 |
CN105226044A (zh) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | 集成电路及形成集成电路的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20030017699A1 (en) | 2003-01-23 |
CN1478294A (zh) | 2004-02-25 |
AU2001283445A1 (en) | 2002-03-04 |
KR20040000397A (ko) | 2004-01-03 |
JP2004507105A (ja) | 2004-03-04 |
US6825092B2 (en) | 2004-11-30 |
WO2002017367A3 (en) | 2003-01-23 |
US6500724B1 (en) | 2002-12-31 |
EP1314190A2 (en) | 2003-05-28 |
KR100794155B1 (ko) | 2008-01-14 |
JP4937489B2 (ja) | 2012-05-23 |
WO2002017367A2 (en) | 2002-02-28 |
TW503575B (en) | 2002-09-21 |
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