AU2001231203A1 - Rc terminator and production method therefor - Google Patents

Rc terminator and production method therefor

Info

Publication number
AU2001231203A1
AU2001231203A1 AU2001231203A AU3120301A AU2001231203A1 AU 2001231203 A1 AU2001231203 A1 AU 2001231203A1 AU 2001231203 A AU2001231203 A AU 2001231203A AU 3120301 A AU3120301 A AU 3120301A AU 2001231203 A1 AU2001231203 A1 AU 2001231203A1
Authority
AU
Australia
Prior art keywords
terminator
production method
method therefor
therefor
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001231203A
Inventor
James Patrick Parkerson
Leonard W Schaper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Arkansas
Original Assignee
University of Arkansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Arkansas filed Critical University of Arkansas
Publication of AU2001231203A1 publication Critical patent/AU2001231203A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AU2001231203A 2000-01-28 2001-01-26 Rc terminator and production method therefor Abandoned AU2001231203A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17871100P 2000-01-28 2000-01-28
US60178711 2000-01-28
PCT/US2001/002730 WO2001056086A1 (en) 2000-01-28 2001-01-26 Rc terminator and production method therefor

Publications (1)

Publication Number Publication Date
AU2001231203A1 true AU2001231203A1 (en) 2001-08-07

Family

ID=22653631

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001231203A Abandoned AU2001231203A1 (en) 2000-01-28 2001-01-26 Rc terminator and production method therefor

Country Status (2)

Country Link
AU (1) AU2001231203A1 (en)
WO (1) WO2001056086A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500724B1 (en) 2000-08-21 2002-12-31 Motorola, Inc. Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4410867A (en) * 1978-12-28 1983-10-18 Western Electric Company, Inc. Alpha tantalum thin film circuit device
US4458295A (en) * 1982-11-09 1984-07-03 Raytheon Company Lumped passive components and method of manufacture
US4876176A (en) * 1987-04-20 1989-10-24 Eaton Corporation Method for fabricating quasi-monolithic integrated circuits
DE3714672A1 (en) * 1987-05-02 1988-11-17 Telefunken Electronic Gmbh RC LINE
JPH01223757A (en) * 1988-03-02 1989-09-06 Mitsubishi Electric Corp Semiconductor device
US5440174A (en) * 1992-10-20 1995-08-08 Matsushita Electric Industrial Co., Ltd. Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged

Also Published As

Publication number Publication date
WO2001056086A1 (en) 2001-08-02

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