AU2001283445A1 - Semiconductor device having passive elements and method of making same - Google Patents
Semiconductor device having passive elements and method of making sameInfo
- Publication number
- AU2001283445A1 AU2001283445A1 AU2001283445A AU8344501A AU2001283445A1 AU 2001283445 A1 AU2001283445 A1 AU 2001283445A1 AU 2001283445 A AU2001283445 A AU 2001283445A AU 8344501 A AU8344501 A AU 8344501A AU 2001283445 A1 AU2001283445 A1 AU 2001283445A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- making same
- passive elements
- passive
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/642,680 | 2000-08-21 | ||
US09/642,680 US6500724B1 (en) | 2000-08-21 | 2000-08-21 | Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material |
PCT/US2001/025875 WO2002017367A2 (en) | 2000-08-21 | 2001-08-17 | Semiconductor device having passive elements and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001283445A1 true AU2001283445A1 (en) | 2002-03-04 |
Family
ID=24577572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001283445A Abandoned AU2001283445A1 (en) | 2000-08-21 | 2001-08-17 | Semiconductor device having passive elements and method of making same |
Country Status (8)
Country | Link |
---|---|
US (2) | US6500724B1 (zh) |
EP (1) | EP1314190A2 (zh) |
JP (1) | JP4937489B2 (zh) |
KR (1) | KR100794155B1 (zh) |
CN (1) | CN1211833C (zh) |
AU (1) | AU2001283445A1 (zh) |
TW (1) | TW503575B (zh) |
WO (1) | WO2002017367A2 (zh) |
Families Citing this family (86)
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---|---|---|---|---|
US8178435B2 (en) | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US8421158B2 (en) | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
US7531417B2 (en) * | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
US6303423B1 (en) | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US20010013660A1 (en) * | 1999-01-04 | 2001-08-16 | Peter Richard Duncombe | Beol decoupling capacitor |
DE19956904C2 (de) * | 1999-11-26 | 2003-08-07 | United Monolithic Semiconduct | Integrierter Amplitudenbegrenzer bzw. Limiter und Verfahren zur Herstellung eines integrierten Limiters |
KR100350675B1 (ko) * | 2000-01-26 | 2002-08-28 | 삼성전자 주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
US6548389B2 (en) * | 2000-04-03 | 2003-04-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6500724B1 (en) * | 2000-08-21 | 2002-12-31 | Motorola, Inc. | Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material |
US6596579B1 (en) * | 2001-04-27 | 2003-07-22 | Lsi Logic Corporation | Method of forming analog capacitor dual damascene process |
US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
US20040012043A1 (en) * | 2002-07-17 | 2004-01-22 | Gealy F. Daniel | Novel dielectric stack and method of making same |
KR100478480B1 (ko) * | 2002-07-30 | 2005-03-28 | 동부아남반도체 주식회사 | 반도체 소자 및 그 제조 방법 |
US6730573B1 (en) * | 2002-11-01 | 2004-05-04 | Chartered Semiconductor Manufacturing Ltd. | MIM and metal resistor formation at CU beol using only one extra mask |
US6709918B1 (en) * | 2002-12-02 | 2004-03-23 | Chartered Semiconductor Manufacturing Ltd. | Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology |
US7022246B2 (en) * | 2003-01-06 | 2006-04-04 | International Business Machines Corporation | Method of fabrication of MIMCAP and resistor at same level |
KR100539198B1 (ko) * | 2003-03-10 | 2005-12-27 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조 방법 |
US6734076B1 (en) * | 2003-03-17 | 2004-05-11 | Texas Instruments Incorporated | Method for thin film resistor integration in dual damascene structure |
JP2004303908A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100487563B1 (ko) * | 2003-04-30 | 2005-05-03 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR100524963B1 (ko) * | 2003-05-14 | 2005-10-31 | 삼성전자주식회사 | 금속 배선 및 금속 저항을 포함하는 반도체 소자 및 그제조 방법 |
KR100604816B1 (ko) * | 2003-05-19 | 2006-07-28 | 삼성전자주식회사 | 집적 회로 소자 리세스 트랜지스터의 제조 방법 및 이에의해 제조된 집적회로 소자 리세스 트랜지스터 |
US6838332B1 (en) | 2003-08-15 | 2005-01-04 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having electrical contact from opposite sides |
US6964908B2 (en) * | 2003-08-19 | 2005-11-15 | International Business Machines Corporation | Metal-insulator-metal capacitor and method of fabricating same |
DE10344389A1 (de) * | 2003-09-25 | 2005-05-19 | Infineon Technologies Ag | Verfahren zur Herstellung einer multifunktionellen Dielektrikumschicht auf einem Substrat |
JP3987847B2 (ja) * | 2003-10-17 | 2007-10-10 | Necエレクトロニクス株式会社 | Mim構造抵抗体を搭載した半導体装置 |
US7080896B2 (en) * | 2004-01-20 | 2006-07-25 | Lexmark International, Inc. | Micro-fluid ejection device having high resistance heater film |
US7535079B2 (en) * | 2005-06-09 | 2009-05-19 | Freescale Semiconductor, Inc. | Semiconductor device comprising passive components |
US6919244B1 (en) * | 2004-03-10 | 2005-07-19 | Motorola, Inc. | Method of making a semiconductor device, and semiconductor device made thereby |
JP4308691B2 (ja) * | 2004-03-19 | 2009-08-05 | 富士通マイクロエレクトロニクス株式会社 | 半導体基板および半導体基板の製造方法 |
US7582901B2 (en) * | 2004-03-26 | 2009-09-01 | Hitachi, Ltd. | Semiconductor device comprising metal insulator metal (MIM) capacitor |
US7239006B2 (en) * | 2004-04-14 | 2007-07-03 | International Business Machines Corporation | Resistor tuning |
US20050255664A1 (en) * | 2004-05-12 | 2005-11-17 | Ching-Hung Kao | Method of forming a metal-insulator-metal capacitor |
US7397087B2 (en) * | 2004-08-06 | 2008-07-08 | International Business Machines Corporation | FEOL/MEOL metal resistor for high end CMOS |
US7355282B2 (en) | 2004-09-09 | 2008-04-08 | Megica Corporation | Post passivation interconnection process and structures |
US8008775B2 (en) | 2004-09-09 | 2011-08-30 | Megica Corporation | Post passivation interconnection structures |
DE502005005467D1 (de) * | 2005-03-16 | 2008-11-06 | Dyconex Ag | Verfahren zum Herstellen eines elektrischen Verbindungselementes, sowie Verbindungselement |
US8384189B2 (en) | 2005-03-29 | 2013-02-26 | Megica Corporation | High performance system-on-chip using post passivation process |
US7345573B2 (en) * | 2005-05-24 | 2008-03-18 | Texas Instruments Incorporated | Integration of thin film resistors having different TCRs into single die |
KR100717813B1 (ko) * | 2005-06-30 | 2007-05-11 | 주식회사 하이닉스반도체 | 나노믹스드 유전막을 갖는 캐패시터 및 그의 제조 방법 |
TWI305951B (en) | 2005-07-22 | 2009-02-01 | Megica Corp | Method for forming a double embossing structure |
US7381981B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Phase-change TaN resistor based triple-state/multi-state read only memory |
CN100413094C (zh) * | 2005-08-09 | 2008-08-20 | 中国科学院物理研究所 | 一种基于碘化铝的电解质及其应用 |
US7485540B2 (en) * | 2005-08-18 | 2009-02-03 | International Business Machines Corporation | Integrated BEOL thin film resistor |
US20070057305A1 (en) | 2005-09-13 | 2007-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | MIM capacitor integrated into the damascene structure and method of making thereof |
US7768055B2 (en) * | 2005-11-30 | 2010-08-03 | International Business Machines Corporation | Passive components in the back end of integrated circuits |
US7310282B2 (en) * | 2005-12-30 | 2007-12-18 | Lexmark International, Inc. | Distributed programmed memory cell overwrite protection |
US7964470B2 (en) * | 2006-03-01 | 2011-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flexible processing method for metal-insulator-metal capacitor formation |
US7422954B2 (en) * | 2006-03-14 | 2008-09-09 | United Microelectronics Corp. | Method for fabricating a capacitor structure |
TWI302027B (en) | 2006-03-17 | 2008-10-11 | Ind Tech Res Inst | A wafer level packaging structure with inductors and manufacture method thereof |
US20070235880A1 (en) * | 2006-03-30 | 2007-10-11 | Chin-Sheng Yang | Semiconductor device and method of fabricating the same |
US20070232014A1 (en) * | 2006-04-03 | 2007-10-04 | Honeywell International Inc. | Method of fabricating a planar MIM capacitor |
JP5027441B2 (ja) | 2006-05-11 | 2012-09-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TWI326908B (en) * | 2006-09-11 | 2010-07-01 | Ind Tech Res Inst | Packaging structure and fabricating method thereof |
US8124490B2 (en) * | 2006-12-21 | 2012-02-28 | Stats Chippac, Ltd. | Semiconductor device and method of forming passive devices |
US8629529B2 (en) | 2006-12-27 | 2014-01-14 | Nec Corporation | Semiconductor device and its manufacturing method |
US7608538B2 (en) * | 2007-01-05 | 2009-10-27 | International Business Machines Corporation | Formation of vertical devices by electroplating |
US7605458B1 (en) * | 2007-02-01 | 2009-10-20 | Xilinx, Inc. | Method and apparatus for integrating capacitors in stacked integrated circuits |
US7488630B2 (en) * | 2007-03-06 | 2009-02-10 | International Business Machines Corporation | Method for preparing 2-dimensional semiconductor devices for integration in a third dimension |
US20100006976A1 (en) * | 2007-03-19 | 2010-01-14 | Ippei Kume | Semiconductor device and manufacturing method thereof |
US20080233704A1 (en) * | 2007-03-23 | 2008-09-25 | Honeywell International Inc. | Integrated Resistor Capacitor Structure |
US8013394B2 (en) * | 2007-03-28 | 2011-09-06 | International Business Machines Corporation | Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method |
US7968929B2 (en) * | 2007-08-07 | 2011-06-28 | International Business Machines Corporation | On-chip decoupling capacitor structures |
US7816762B2 (en) * | 2007-08-07 | 2010-10-19 | International Business Machines Corporation | On-chip decoupling capacitor structures |
JPWO2009122496A1 (ja) * | 2008-03-31 | 2011-07-28 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US20100224960A1 (en) * | 2009-03-04 | 2010-09-09 | Kevin John Fischer | Embedded capacitor device and methods of fabrication |
US7951663B2 (en) * | 2009-05-26 | 2011-05-31 | Stats Chippac, Ltd. | Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer |
US8426745B2 (en) * | 2009-11-30 | 2013-04-23 | Intersil Americas Inc. | Thin film resistor |
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JP2015195337A (ja) | 2014-03-28 | 2015-11-05 | ローム株式会社 | ディスクリートキャパシタおよびその製造方法 |
US20150294970A1 (en) * | 2014-04-14 | 2015-10-15 | Qualcomm Incorporated | Capacitor, resistor and resistor-capacitor components |
CN105226044B (zh) * | 2014-05-29 | 2018-12-18 | 联华电子股份有限公司 | 集成电路及形成集成电路的方法 |
JP6451601B2 (ja) * | 2015-11-11 | 2019-01-16 | 三菱電機株式会社 | 半導体装置 |
US10090378B1 (en) | 2017-03-17 | 2018-10-02 | International Business Machines Corporation | Efficient metal-insulator-metal capacitor |
CN106997880A (zh) * | 2017-04-05 | 2017-08-01 | 矽力杰半导体技术(杭州)有限公司 | 一种半导体结构及其制备方法 |
US10340330B2 (en) | 2017-10-13 | 2019-07-02 | International Business Machines Corporation | Precision BEOL resistors |
US20190148370A1 (en) * | 2017-11-13 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device including mim capacitor and resistor |
CN115360164A (zh) | 2017-11-13 | 2022-11-18 | 台湾积体电路制造股份有限公司 | 包括mim电容器和电阻器的器件 |
US10410966B2 (en) | 2017-12-19 | 2019-09-10 | International Business Machines Corporation | BEOL embedded high density vertical resistor structure |
US20190206786A1 (en) * | 2017-12-28 | 2019-07-04 | Intel Corporation | Thin film passive devices integrated in a package substrate |
CN108231749B (zh) * | 2018-02-28 | 2024-07-02 | 安徽安努奇科技有限公司 | 一种无源器件堆叠结构及其制作方法 |
US10867903B2 (en) * | 2018-07-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package and method of forming the same |
KR20200091192A (ko) | 2019-01-22 | 2020-07-30 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US11587865B2 (en) * | 2020-06-15 | 2023-02-21 | Semiconductor Device Including Capacitor And Resistor | Semiconductor device including capacitor and resistor |
US11270938B2 (en) * | 2020-06-24 | 2022-03-08 | Globalfoundries Singapore Pte. Ltd. | Semiconductor devices and methods of forming semiconductor devices |
US11637100B2 (en) * | 2021-08-11 | 2023-04-25 | Globalfoundries Singapore Pte. Ltd. | Semiconductor device having capacitor and resistor and a method of forming the same |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69017802T2 (de) | 1989-08-30 | 1995-09-07 | Nippon Electric Co | Dünnfilmkondensator und dessen Herstellungsverfahren. |
JP2705476B2 (ja) * | 1992-08-07 | 1998-01-28 | ヤマハ株式会社 | 半導体装置の製造方法 |
US5440174A (en) | 1992-10-20 | 1995-08-08 | Matsushita Electric Industrial Co., Ltd. | Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged |
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US5801065A (en) | 1994-02-03 | 1998-09-01 | Universal Semiconductor, Inc. | Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection |
US5576240A (en) | 1994-12-09 | 1996-11-19 | Lucent Technologies Inc. | Method for making a metal to metal capacitor |
US5708559A (en) * | 1995-10-27 | 1998-01-13 | International Business Machines Corporation | Precision analog metal-metal capacitor |
US5912044A (en) | 1997-01-10 | 1999-06-15 | International Business Machines Corporation | Method for forming thin film capacitors |
JPH10303372A (ja) | 1997-01-31 | 1998-11-13 | Sanyo Electric Co Ltd | 半導体集積回路およびその製造方法 |
JP3180768B2 (ja) * | 1998-07-14 | 2001-06-25 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
US5985731A (en) | 1998-08-17 | 1999-11-16 | Motorola, Inc. | Method for forming a semiconductor device having a capacitor structure |
TW389993B (en) * | 1998-11-18 | 2000-05-11 | United Microelectronics Corp | Method for producing thin film resistance of dual damascene interconnect |
US6346454B1 (en) | 1999-01-12 | 2002-02-12 | Agere Systems Guardian Corp. | Method of making dual damascene interconnect structure and metal electrode capacitor |
US6180976B1 (en) | 1999-02-02 | 2001-01-30 | Conexant Systems, Inc. | Thin-film capacitors and methods for forming the same |
US6259128B1 (en) * | 1999-04-23 | 2001-07-10 | International Business Machines Corporation | Metal-insulator-metal capacitor for copper damascene process and method of forming the same |
US6117747A (en) | 1999-11-22 | 2000-09-12 | Chartered Semiconductor Manufacturing Ltd. | Integration of MOM capacitor into dual damascene process |
JP3967544B2 (ja) * | 1999-12-14 | 2007-08-29 | 株式会社東芝 | Mimキャパシタ |
WO2001056086A1 (en) | 2000-01-28 | 2001-08-02 | The Board Of Trustees Of The University Of Arkansas | Rc terminator and production method therefor |
US6500724B1 (en) * | 2000-08-21 | 2002-12-31 | Motorola, Inc. | Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material |
-
2000
- 2000-08-21 US US09/642,680 patent/US6500724B1/en not_active Expired - Lifetime
-
2001
- 2001-08-17 KR KR1020037002545A patent/KR100794155B1/ko not_active IP Right Cessation
- 2001-08-17 CN CNB018144950A patent/CN1211833C/zh not_active Expired - Fee Related
- 2001-08-17 WO PCT/US2001/025875 patent/WO2002017367A2/en not_active Application Discontinuation
- 2001-08-17 EP EP01962250A patent/EP1314190A2/en not_active Withdrawn
- 2001-08-17 JP JP2002521340A patent/JP4937489B2/ja not_active Expired - Fee Related
- 2001-08-17 AU AU2001283445A patent/AU2001283445A1/en not_active Abandoned
- 2001-08-20 TW TW090120390A patent/TW503575B/zh not_active IP Right Cessation
-
2002
- 2002-09-13 US US10/243,587 patent/US6825092B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20040000397A (ko) | 2004-01-03 |
JP4937489B2 (ja) | 2012-05-23 |
WO2002017367A3 (en) | 2003-01-23 |
US20030017699A1 (en) | 2003-01-23 |
WO2002017367A2 (en) | 2002-02-28 |
KR100794155B1 (ko) | 2008-01-14 |
CN1478294A (zh) | 2004-02-25 |
TW503575B (en) | 2002-09-21 |
EP1314190A2 (en) | 2003-05-28 |
JP2004507105A (ja) | 2004-03-04 |
CN1211833C (zh) | 2005-07-20 |
US6825092B2 (en) | 2004-11-30 |
US6500724B1 (en) | 2002-12-31 |
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