CN120279967A - 存储器系统 - Google Patents
存储器系统 Download PDFInfo
- Publication number
- CN120279967A CN120279967A CN202510440484.XA CN202510440484A CN120279967A CN 120279967 A CN120279967 A CN 120279967A CN 202510440484 A CN202510440484 A CN 202510440484A CN 120279967 A CN120279967 A CN 120279967A
- Authority
- CN
- China
- Prior art keywords
- data
- output
- pad
- read
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7201—Logical to physical mapping or translation of blocks or pages
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510440484.XA CN120279967A (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510440484.XA CN120279967A (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
| CN201980098583.7A CN114127697B (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
| PCT/JP2019/036211 WO2021049033A1 (ja) | 2019-09-13 | 2019-09-13 | メモリシステム |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980098583.7A Division CN114127697B (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120279967A true CN120279967A (zh) | 2025-07-08 |
Family
ID=74867014
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202510440484.XA Pending CN120279967A (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
| CN201980098583.7A Active CN114127697B (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980098583.7A Active CN114127697B (zh) | 2019-09-13 | 2019-09-13 | 存储器系统 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11868648B2 (https=) |
| JP (1) | JPWO2021049033A1 (https=) |
| CN (2) | CN120279967A (https=) |
| TW (2) | TWI861483B (https=) |
| WO (1) | WO2021049033A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2021049033A1 (https=) * | 2019-09-13 | 2021-03-18 | ||
| KR20220142660A (ko) * | 2021-04-15 | 2022-10-24 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| KR20220157155A (ko) * | 2021-05-20 | 2022-11-29 | 에스케이하이닉스 주식회사 | 스토리지 장치 및 그 동작 방법 |
| JP7703473B2 (ja) | 2022-03-18 | 2025-07-07 | キオクシア株式会社 | 半導体記憶装置 |
| JP2024131386A (ja) * | 2023-03-16 | 2024-09-30 | キオクシア株式会社 | メモリシステム |
| US12265708B2 (en) * | 2023-06-27 | 2025-04-01 | Viavi Solutions Inc. | Timing alignment for data structure read commands |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1406987A (en) | 1971-08-04 | 1975-09-24 | Priestley T P | Hydraulic actuator |
| KR100281105B1 (ko) * | 1998-02-04 | 2001-02-01 | 김영환 | 디램의 데이타 출력 회로 |
| JP2002150789A (ja) * | 2000-11-09 | 2002-05-24 | Hitachi Ltd | 不揮発性半導体記憶装置 |
| US6788593B2 (en) * | 2001-02-28 | 2004-09-07 | Rambus, Inc. | Asynchronous, high-bandwidth memory component using calibrated timing elements |
| JP4237109B2 (ja) * | 2004-06-18 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
| KR100673903B1 (ko) * | 2005-04-30 | 2007-01-25 | 주식회사 하이닉스반도체 | 비트라인 오버 드라이빙 스킴을 가진 반도체 메모리 소자 및 그의 비트라인 감지증폭기 구동방법 |
| JP4295253B2 (ja) * | 2005-07-06 | 2009-07-15 | 富士通マイクロエレクトロニクス株式会社 | 強誘電体記憶装置 |
| JP4967452B2 (ja) * | 2006-05-18 | 2012-07-04 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| KR100764060B1 (ko) * | 2006-09-29 | 2007-10-09 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 시스템 그리고 그것을 위한메모리 셀 어레이 구조 |
| US20080086590A1 (en) | 2006-10-04 | 2008-04-10 | Masayuki Urabe | Flash Memory Control Interface |
| KR101373793B1 (ko) * | 2006-10-04 | 2014-03-13 | 마벨 월드 트레이드 리미티드 | 플래시 메모리 제어 인터페이스 |
| KR100868105B1 (ko) * | 2006-12-13 | 2008-11-11 | 삼성전자주식회사 | 저항 메모리 장치 |
| US20080273389A1 (en) * | 2007-03-21 | 2008-11-06 | Micron Technology, Inc. | Flash memory cells, NAND cell units, methods of forming NAND cell units, and methods of programming NAND cell unit strings |
| US9431091B2 (en) | 2008-06-06 | 2016-08-30 | Uniquify, Inc. | Multiple gating modes and half-frequency dynamic calibration for DDR memory controllers |
| JP2011197819A (ja) * | 2010-03-17 | 2011-10-06 | Toshiba Corp | 半導体装置 |
| KR102049306B1 (ko) * | 2011-12-12 | 2019-11-27 | 삼성전자주식회사 | 메모리 셀의 리드 또는 라이트 동작 방법 과 장치 및 이를 포함하는 메모리 시스템 |
| US8913448B2 (en) | 2012-10-25 | 2014-12-16 | Micron Technology, Inc. | Apparatuses and methods for capturing data in a memory |
| JP2014154197A (ja) * | 2013-02-13 | 2014-08-25 | Toshiba Corp | 不揮発性記憶装置 |
| KR102235521B1 (ko) | 2015-02-13 | 2021-04-05 | 삼성전자주식회사 | 특정 패턴을 갖는 저장 장치 및 그것의 동작 방법 |
| TWI579860B (zh) * | 2015-03-23 | 2017-04-21 | 國立成功大學 | 一種記憶細胞及具該記憶細胞的內容可定址記憶體 |
| CN104882157B (zh) * | 2015-05-26 | 2017-05-10 | 湖北中部慧易数据科技有限公司 | 一种磁随机存储系统及其读取操作方法 |
| JP6509711B2 (ja) * | 2015-10-29 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びメモリシステム |
| US9786359B2 (en) * | 2016-01-29 | 2017-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Static random access memory (SRAM) tracking cells and methods of forming same |
| KR102403339B1 (ko) | 2016-02-22 | 2022-06-02 | 에스케이하이닉스 주식회사 | 데이터 정렬 장치 |
| KR102902406B1 (ko) | 2017-02-14 | 2025-12-19 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
| JP6779821B2 (ja) * | 2017-03-24 | 2020-11-04 | キオクシア株式会社 | メモリシステム及びデータの読み出し方法 |
| JP2019128829A (ja) * | 2018-01-25 | 2019-08-01 | 東芝メモリ株式会社 | 半導体記憶装置及びメモリシステム |
| JP2020047340A (ja) | 2018-09-19 | 2020-03-26 | キオクシア株式会社 | 不揮発性メモリ及びメモリシステム |
| JPWO2021049033A1 (https=) * | 2019-09-13 | 2021-03-18 | ||
| JP7350644B2 (ja) | 2019-12-04 | 2023-09-26 | キオクシア株式会社 | 出力回路 |
| JP7282699B2 (ja) | 2020-01-21 | 2023-05-29 | キオクシア株式会社 | 半導体記憶装置 |
-
2019
- 2019-09-13 JP JP2021545091A patent/JPWO2021049033A1/ja active Pending
- 2019-09-13 WO PCT/JP2019/036211 patent/WO2021049033A1/ja not_active Ceased
- 2019-09-13 CN CN202510440484.XA patent/CN120279967A/zh active Pending
- 2019-09-13 CN CN201980098583.7A patent/CN114127697B/zh active Active
-
2020
- 2020-08-25 TW TW111112753A patent/TWI861483B/zh active
- 2020-08-25 TW TW109128932A patent/TWI764251B/zh active
-
2022
- 2022-01-14 US US17/575,749 patent/US11868648B2/en active Active
-
2023
- 2023-11-28 US US18/520,612 patent/US12135898B2/en active Active
-
2024
- 2024-09-27 US US18/899,647 patent/US20250021260A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20220137870A1 (en) | 2022-05-05 |
| US20240094941A1 (en) | 2024-03-21 |
| CN114127697A (zh) | 2022-03-01 |
| TWI764251B (zh) | 2022-05-11 |
| TWI861483B (zh) | 2024-11-11 |
| TW202115568A (zh) | 2021-04-16 |
| CN114127697B (zh) | 2025-04-29 |
| US20250021260A1 (en) | 2025-01-16 |
| TW202230124A (zh) | 2022-08-01 |
| US12135898B2 (en) | 2024-11-05 |
| WO2021049033A1 (ja) | 2021-03-18 |
| US11868648B2 (en) | 2024-01-09 |
| JPWO2021049033A1 (https=) | 2021-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |