TWI861483B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI861483B
TWI861483B TW111112753A TW111112753A TWI861483B TW I861483 B TWI861483 B TW I861483B TW 111112753 A TW111112753 A TW 111112753A TW 111112753 A TW111112753 A TW 111112753A TW I861483 B TWI861483 B TW I861483B
Authority
TW
Taiwan
Prior art keywords
data
output
signal
signals
dqs
Prior art date
Application number
TW111112753A
Other languages
English (en)
Chinese (zh)
Other versions
TW202230124A (zh
Inventor
山本健介
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202230124A publication Critical patent/TW202230124A/zh
Application granted granted Critical
Publication of TWI861483B publication Critical patent/TWI861483B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
TW111112753A 2019-09-13 2020-08-25 半導體記憶裝置 TWI861483B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2019/036211 2019-09-13
PCT/JP2019/036211 WO2021049033A1 (ja) 2019-09-13 2019-09-13 メモリシステム

Publications (2)

Publication Number Publication Date
TW202230124A TW202230124A (zh) 2022-08-01
TWI861483B true TWI861483B (zh) 2024-11-11

Family

ID=74867014

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111112753A TWI861483B (zh) 2019-09-13 2020-08-25 半導體記憶裝置
TW109128932A TWI764251B (zh) 2019-09-13 2020-08-25 記憶體系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW109128932A TWI764251B (zh) 2019-09-13 2020-08-25 記憶體系統

Country Status (5)

Country Link
US (3) US11868648B2 (https=)
JP (1) JPWO2021049033A1 (https=)
CN (2) CN120279967A (https=)
TW (2) TWI861483B (https=)
WO (1) WO2021049033A1 (https=)

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JPWO2021049033A1 (https=) * 2019-09-13 2021-03-18
KR20220142660A (ko) * 2021-04-15 2022-10-24 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
KR20220157155A (ko) * 2021-05-20 2022-11-29 에스케이하이닉스 주식회사 스토리지 장치 및 그 동작 방법
JP7703473B2 (ja) 2022-03-18 2025-07-07 キオクシア株式会社 半導体記憶装置
JP2024131386A (ja) * 2023-03-16 2024-09-30 キオクシア株式会社 メモリシステム
US12265708B2 (en) * 2023-06-27 2025-04-01 Viavi Solutions Inc. Timing alignment for data structure read commands

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TWI298161B (en) * 2005-07-06 2008-06-21 Fujitsu Ltd Ferroelectric storage device
TWI357082B (en) * 2005-04-30 2012-01-21 Hynix Semiconductor Inc Semiconductor memory device and method for stably
JP2013050996A (ja) * 2006-10-04 2013-03-14 Marvell World Trade Ltd フラッシュメモリデバイスを指定する集積回路
TWI463492B (zh) * 2006-12-13 2014-12-01 Samsung Electronics Co Ltd 電阻式記憶體裝置
TWI579860B (zh) * 2015-03-23 2017-04-21 國立成功大學 一種記憶細胞及具該記憶細胞的內容可定址記憶體
US20170125092A1 (en) * 2015-10-29 2017-05-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and memory system
TWI585774B (zh) * 2011-12-12 2017-06-01 三星電子股份有限公司 記憶體元件以及用於記憶體元件之感測及閂鎖電路
CN107025931A (zh) * 2016-01-29 2017-08-08 台湾积体电路制造股份有限公司 静态随机存取存储器阵列、追踪单元以及阵列配置方法
JP2018163440A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリシステム

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KR100281105B1 (ko) * 1998-02-04 2001-02-01 김영환 디램의 데이타 출력 회로
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
US6788593B2 (en) * 2001-02-28 2004-09-07 Rambus, Inc. Asynchronous, high-bandwidth memory component using calibrated timing elements
JP4237109B2 (ja) * 2004-06-18 2009-03-11 エルピーダメモリ株式会社 半導体記憶装置及びリフレッシュ周期制御方法
JP4967452B2 (ja) * 2006-05-18 2012-07-04 富士通セミコンダクター株式会社 半導体メモリ
KR100764060B1 (ko) * 2006-09-29 2007-10-09 삼성전자주식회사 불휘발성 메모리 장치 및 시스템 그리고 그것을 위한메모리 셀 어레이 구조
US20080086590A1 (en) 2006-10-04 2008-04-10 Masayuki Urabe Flash Memory Control Interface
US20080273389A1 (en) * 2007-03-21 2008-11-06 Micron Technology, Inc. Flash memory cells, NAND cell units, methods of forming NAND cell units, and methods of programming NAND cell unit strings
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KR102235521B1 (ko) 2015-02-13 2021-04-05 삼성전자주식회사 특정 패턴을 갖는 저장 장치 및 그것의 동작 방법
CN104882157B (zh) * 2015-05-26 2017-05-10 湖北中部慧易数据科技有限公司 一种磁随机存储系统及其读取操作方法
KR102403339B1 (ko) 2016-02-22 2022-06-02 에스케이하이닉스 주식회사 데이터 정렬 장치
KR102902406B1 (ko) 2017-02-14 2025-12-19 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
JP2019128829A (ja) * 2018-01-25 2019-08-01 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
JP2020047340A (ja) 2018-09-19 2020-03-26 キオクシア株式会社 不揮発性メモリ及びメモリシステム
JPWO2021049033A1 (https=) * 2019-09-13 2021-03-18
JP7350644B2 (ja) 2019-12-04 2023-09-26 キオクシア株式会社 出力回路
JP7282699B2 (ja) 2020-01-21 2023-05-29 キオクシア株式会社 半導体記憶装置

Patent Citations (9)

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Publication number Priority date Publication date Assignee Title
TWI357082B (en) * 2005-04-30 2012-01-21 Hynix Semiconductor Inc Semiconductor memory device and method for stably
TWI298161B (en) * 2005-07-06 2008-06-21 Fujitsu Ltd Ferroelectric storage device
JP2013050996A (ja) * 2006-10-04 2013-03-14 Marvell World Trade Ltd フラッシュメモリデバイスを指定する集積回路
TWI463492B (zh) * 2006-12-13 2014-12-01 Samsung Electronics Co Ltd 電阻式記憶體裝置
TWI585774B (zh) * 2011-12-12 2017-06-01 三星電子股份有限公司 記憶體元件以及用於記憶體元件之感測及閂鎖電路
TWI579860B (zh) * 2015-03-23 2017-04-21 國立成功大學 一種記憶細胞及具該記憶細胞的內容可定址記憶體
US20170125092A1 (en) * 2015-10-29 2017-05-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and memory system
CN107025931A (zh) * 2016-01-29 2017-08-08 台湾积体电路制造股份有限公司 静态随机存取存储器阵列、追踪单元以及阵列配置方法
JP2018163440A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリシステム

Also Published As

Publication number Publication date
US20220137870A1 (en) 2022-05-05
CN120279967A (zh) 2025-07-08
US20240094941A1 (en) 2024-03-21
CN114127697A (zh) 2022-03-01
TWI764251B (zh) 2022-05-11
TW202115568A (zh) 2021-04-16
CN114127697B (zh) 2025-04-29
US20250021260A1 (en) 2025-01-16
TW202230124A (zh) 2022-08-01
US12135898B2 (en) 2024-11-05
WO2021049033A1 (ja) 2021-03-18
US11868648B2 (en) 2024-01-09
JPWO2021049033A1 (https=) 2021-03-18

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