CN1200430C - 具有集成的半导体器件的mram - Google Patents

具有集成的半导体器件的mram Download PDF

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Publication number
CN1200430C
CN1200430C CNB001352547A CN00135254A CN1200430C CN 1200430 C CN1200430 C CN 1200430C CN B001352547 A CNB001352547 A CN B001352547A CN 00135254 A CN00135254 A CN 00135254A CN 1200430 C CN1200430 C CN 1200430C
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CN
China
Prior art keywords
layer
ferromagnetic
magnetic
ferromagnetic layer
semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB001352547A
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English (en)
Chinese (zh)
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CN1300077A (zh
Inventor
赛德·特兰尼
晶·史
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Freescale Semiconductor Inc
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Publication of CN1300077A publication Critical patent/CN1300077A/zh
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Publication of CN1200430C publication Critical patent/CN1200430C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB001352547A 1999-12-13 2000-12-12 具有集成的半导体器件的mram Expired - Fee Related CN1200430C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/460,056 1999-12-13
US09/460,056 US6285581B1 (en) 1999-12-13 1999-12-13 MRAM having semiconductor device integrated therein

Publications (2)

Publication Number Publication Date
CN1300077A CN1300077A (zh) 2001-06-20
CN1200430C true CN1200430C (zh) 2005-05-04

Family

ID=23827246

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB001352547A Expired - Fee Related CN1200430C (zh) 1999-12-13 2000-12-12 具有集成的半导体器件的mram

Country Status (7)

Country Link
US (1) US6285581B1 (https=)
EP (1) EP1109169B1 (https=)
JP (1) JP2001203332A (https=)
KR (1) KR20010062244A (https=)
CN (1) CN1200430C (https=)
DE (1) DE60021997T2 (https=)
SG (1) SG88806A1 (https=)

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JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
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US6636436B2 (en) 2001-10-25 2003-10-21 Hewlett-Packard Development Company, L.P. Isolation of memory cells in cross point arrays
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JP4157707B2 (ja) * 2002-01-16 2008-10-01 株式会社東芝 磁気メモリ
DE10209508B4 (de) * 2002-03-05 2009-01-15 Forschungszentrum Jülich GmbH Verfahren zur Speicherung von Daten in einem MRAM-Datenspeicher
US6927073B2 (en) * 2002-05-16 2005-08-09 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP3643823B2 (ja) 2002-09-30 2005-04-27 株式会社東芝 磁気抵抗効果素子
US6809388B2 (en) * 2002-10-31 2004-10-26 Hewlett-Packard Development Company, L.P. Magnetic sensor based on efficient spin injection into semiconductors
US20040089905A1 (en) * 2002-10-31 2004-05-13 Ossipov Viatcheslav V. Magnetic sensor using spin injection through a semiconductor with a graded doping profile
CN100533589C (zh) * 2002-11-26 2009-08-26 株式会社东芝 磁单元和磁存储器
JP2004179483A (ja) * 2002-11-28 2004-06-24 Hitachi Ltd 不揮発性磁気メモリ
KR100681379B1 (ko) * 2003-03-07 2007-02-12 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 의존 전달 특성을 갖는 전계 효과 트랜지스터 및그것을 이용한 비휘발성 메모리
JP2004319587A (ja) * 2003-04-11 2004-11-11 Sharp Corp メモリセル、メモリ装置及びメモリセル製造方法
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
JP2005109263A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US6947333B2 (en) * 2003-10-30 2005-09-20 Hewlett-Packard Development Company, L.P. Memory device
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
EP1662510B1 (en) * 2004-11-30 2010-07-21 Kabushiki Kaisha Toshiba Arrangement of write lines in an MRAM device
CN100459149C (zh) * 2005-03-24 2009-02-04 株式会社日立制作所 导电控制器件
EP1934984B1 (en) 2005-09-30 2011-05-18 Nxp B.V. Nanowire magnetic random access memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
JP5072392B2 (ja) * 2007-03-08 2012-11-14 株式会社東芝 縦型スピントランジスタ及びその製造方法
JP2009064826A (ja) * 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
WO2009107780A1 (ja) * 2008-02-28 2009-09-03 日本電気株式会社 磁気抵抗記憶装置及びその動作方法
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP4908540B2 (ja) 2009-03-25 2012-04-04 株式会社東芝 スピンｍｏｓｆｅｔおよびリコンフィギャラブルロジック回路
US7986572B2 (en) * 2009-08-17 2011-07-26 Magic Technologies, Inc. Magnetic memory capable of minimizing gate voltage stress in unselected memory cells
JP2013089890A (ja) * 2011-10-21 2013-05-13 Toshiba Corp 磁気記憶素子
TWI559450B (zh) * 2014-04-18 2016-11-21 力晶科技股份有限公司 記憶體結構及其操作方法
RU2573200C2 (ru) * 2014-11-20 2016-01-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Магниторезистивная ячейка памяти и способ ее использования
CN109859785B (zh) * 2019-01-11 2020-11-06 中电海康集团有限公司 一种时钟自适应访问mram的装置
WO2020160358A1 (en) * 2019-01-31 2020-08-06 Northwestern University Magnetic memory device using doped semiconductor layer

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US4780848A (en) 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
DE4320514A1 (de) * 1993-06-22 1995-01-05 Forschungszentrum Juelich Gmbh Neues optisches Schreibverfahren und Schichtsystem für magnetooptische Datenspeicher
US5745408A (en) * 1996-09-09 1998-04-28 Motorola, Inc. Multi-layer magnetic memory cell with low switching current
US5734605A (en) 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
JP3655445B2 (ja) * 1996-09-17 2005-06-02 株式会社東芝 光半導体装置
DE69723963T2 (de) * 1996-12-02 2004-06-17 Koninklijke Philips Electronics N.V. Seitliche magento-elektronische vorrichtung unter ausnutzung eines quasi zwei-dimensionalen elektrogases
US5774394A (en) * 1997-05-22 1998-06-30 Motorola, Inc. Magnetic memory cell with increased GMR ratio
US5838608A (en) * 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
US6069820A (en) * 1998-02-20 2000-05-30 Kabushiki Kaisha Toshiba Spin dependent conduction device
US5943574A (en) 1998-02-23 1999-08-24 Motorola, Inc. Method of fabricating 3D multilayer semiconductor circuits
DE69923386T2 (de) * 1998-05-13 2005-12-22 Sony Corp. Bauelement mit magnetischem Material und Adressierverfahren dafür
JPH11330387A (ja) * 1998-05-13 1999-11-30 Sony Corp 磁化制御方法、情報記録方法及び情報記録素子
JP4076197B2 (ja) * 1999-05-19 2008-04-16 株式会社東芝 磁性素子、記憶装置、磁気再生ヘッド、３端子素子、及び磁気ディスク装置

Also Published As

Publication number Publication date
CN1300077A (zh) 2001-06-20
KR20010062244A (ko) 2001-07-07
US6285581B1 (en) 2001-09-04
EP1109169B1 (en) 2005-08-17
DE60021997T2 (de) 2006-01-26
EP1109169A3 (en) 2001-09-19
DE60021997D1 (de) 2005-09-22
EP1109169A2 (en) 2001-06-20
SG88806A1 (en) 2002-05-21
JP2001203332A (ja) 2001-07-27

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