CN1196177C - 加热炉与半导体基板装载治具的组合及半导体装置的制造方法 - Google Patents

加热炉与半导体基板装载治具的组合及半导体装置的制造方法 Download PDF

Info

Publication number
CN1196177C
CN1196177C CNB021269165A CN02126916A CN1196177C CN 1196177 C CN1196177 C CN 1196177C CN B021269165 A CNB021269165 A CN B021269165A CN 02126916 A CN02126916 A CN 02126916A CN 1196177 C CN1196177 C CN 1196177C
Authority
CN
China
Prior art keywords
wafer
semiconductor substrate
loading tool
combination
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021269165A
Other languages
English (en)
Other versions
CN1416153A (zh
Inventor
高木干夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHONGYUE SCIENCE AND TECHNOLOGY Co Ltd
Ftl Corp
Original Assignee
CHONGYUE SCIENCE AND TECHNOLOGY Co Ltd
Ftl Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHONGYUE SCIENCE AND TECHNOLOGY Co Ltd, Ftl Corp filed Critical CHONGYUE SCIENCE AND TECHNOLOGY Co Ltd
Publication of CN1416153A publication Critical patent/CN1416153A/zh
Application granted granted Critical
Publication of CN1196177C publication Critical patent/CN1196177C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种加热炉与半导体基板装载治具的组合，其为由耐火断热材料所构成的炉体及含有配置于炉体之内侧面的加热体所构成直立炉或横置炉，以及在其反应管的均热区内可将一片或二片之半导体基板以其面与炉的长轴方向一致，且可自由前进后退的方式装载的基板装载治具所构成的组合。此组合的特征为加热体与半导体基板的面成实质上平行。依照本发明的加热炉与半导与基板装载治具的组合进行RTP的话，加热炉之床占有面积(footprint)可变小。

Description

加热炉与半导体基板装载治具的组合及半导体装置的制造方法
技术领域
本发明系有关于CVD、扩散等各种半导体制程所使用的热壁型加热炉(hotwall heating furnace)及半导体基板装载治具的组合，以及半导体装置的制造方法。
背景技术
使用热壁型加热炉的半导体制造装置为习知者，例如在下述的学术演讲中已提出。
在1994年9月19日-22日在日本名古屋的第55次应用物理学会之发表会(发表号21a-ZE-6)中提到在直立炉(vertical furnace)的上下二处设置低温区及高温而将晶圆于此区间移动而进行快速热退火(Rapid Thermal Annealing)的话，在晶圆面内部的片电阻(sheet resistance)分布比一般的快速热退火为佳。
而在1995年8月30日-9月1日在荷兰阿姆斯特丹举行的第3届国际快速热退火处理研讨会，RTP‘95中之报告，The effects of rapid thermalprocessing on quarter micron CMOS device，pp101-103)中提出了于使用上述形式的直立炉的RTP(Rapid Thermal processing)中对5片的晶圆进行1000℃5秒的处理以制造CMOS，同样型式的炉适用于回流(reflow)制程亦有报告(4th int conf on Thermal Processing of Semiconductors-RTP‘96 pp30-33)及此型式的炉适用于千兆位DRAM的退火制程亦有报告。(4th Int conf Onadvanced Thermal processing of Semiconductor-RTP‘96)。
图1显示处理温度分布优良的1片晶圆的直立式单片式加热炉构造的主要部份。图中，1为由耐火、断热材料所制成的炉体，2为加热体，3为石英制反应管，4为于反应管3的顶部开口而从炉的下部将气体导入炉内的气体导入管，5为炉底板，6为在处理前后在炉内升降且在处理中旋转的支持棒，7为从支持棒6向上成斜面而分开的晶圆支承部，8为晶圆，9为支撑晶圆背部之爪，10为O型环，11为开口于反应管下部的排气管。以此构造的加热炉加热的晶圆8的温度分布会受到至加热体2的距离的影响而呈周围温度高而中心低。
为了使此种晶圆面内的温度分布均一，本案申请人在其美国专利NO.6,159,873中提出了在炉内配置与晶圆有几乎相同形状的蓄热板，并预先加热，并移至晶圆的近傍，而藉由加热体与蓄热板双方的热源来使晶圆急速升温并使温度分布均一化的方法。本发明的发明人在1998年春季应用物理学会研讨会的发表论文中，对于蓄热板的上述效果以模拟方法作研究及考察。
再者，于该美国专利中对于使用蓄热板作为加热体的构想亦具体的揭示，而且在该专利的第12图中亦揭示了将晶圆之面尽量接近在平坦状的炉顶部配置的加热体的方法。依此方法，由于晶圆与加热体之面互相成近距离面对面，因而晶圆面的温度分布可显著的改善。
于前述美国专利所揭示的使晶圆尽量接近炉顶及加热体的方法虽可改善晶圆的温度分布，但由于加热之断面为圆形，因此炉的占有床面积(footprint)大。
由于半导体制造用的加热炉的每单位体积及每单位容积需高价的建设成本来设置无尘屋(clean room)，所以能够缩减该床占有面积或无尘室容积极具意义。
发明内容
本发明的加热炉与半导体基板装载治具的组合乃为由耐火，断热材所构成的炉体及含有配置于炉体内侧面的加热体所构成的直立炉或横置炉，以及其在炉的反应管的均热区内将一片或二片的半导体基板以其面与炉之长轴方向一致，且可自由前进后退的方式所支持的基板装载治具所构成的组合，其将征在于加热体之面与半导体基板的面平行。
本发明另提供一种半导体基板装载治具，其特征在于：于直立炉或横置炉的长轴方向的延伸方向设置，且具有中空部的气体导入管的前端区设置半导体基板的装载治具，而于该装载治具所设的半导基板的装载部，形成喷出由前述气体导入管送来而与该半导体基板不作化学反应的不活性气体的喷出孔。
再者，本发明乃以使用上述加热炉与半导体基板的装载治具之为组合进行快速热制程(Rapid Thermal Processing，RTP)为其特征。RTP之方法如下述所示：
(1)RTA(Rapid Thermal Annealing)：以10-150℃/sec之速度升温降温，并保持在处理温度0-20秒。
(2)RTO(Rapid Thermal Oxidation)：以与(1)同样之条件于硅之表面形成薄的氧化膜。
(3)RTN(Rapid Thermal Nitriding)：以与(1)同样之条件在硅表面形成薄的氮化膜。
(4)RTCVD(Rapid Thermal Chemical Vapor Deposition)：以与(1)同样之条件于CVD气体之气氛中成长CVD膜。
(5)RT-Wet Reflowing：以与(1)同样的条件在高温水蒸气中回流BPSG。
依照本发明，可于8～12英寸CVD上施行上述RTP。
于直立炉内将晶圆槽置时，炉床占有面积较半导体基板(以下称晶圆)之面积为大。而在横置炉内将晶圆面与炉的长轴方向成交叉而直立装载的话，同样地炉床占有面积较晶圆面积为大。因此不论何种情况，加热炉变大。因此一般将晶圆与炉的长轴方向，亦即直立炉之纵轴或横置炉之水平方向轴一致以构成加热炉与基板装载治具之组合。此种构造的本身为习知，但依照本发明，藉由将炉之内侧面与晶圆面成实质的平行而变更炉之断面轮廓的话就可达成所预期的目的，以下参照本发明之图式具体说明本发明。
附图说明
图1为显示习知的单片式直立热壁型加热炉之一例的剖面图；
图2为显示本发明立直之炉与直立装载的晶圆装载治具的组合之一例之图，为图3的A-A剖面图(但气体导入管4，排气管11省略)；
图3为图2之炉的纵剖面图；
图4为显示本发明的直立炉，晶圆装载治具及蓄热板的组合之一例的横剖面图；
图5为图4的A-A剖面图；
图6为显示本发明的横置炉与直立装载晶圆的装载治具的组合之一例，为图7的A-A剖面图；
图7为图6的B-B剖面图；
图8为显示晶圆装载治具之爪部构造之一例之图，而为图7的C-C剖面图；
图9为显示晶圆装载治具爪部构造之另一例的图7之B-B剖面图；
图10a及图10b为横置于横置炉内装载晶圆的治具之图；
图10c为说明依照本发明进行硅晶圆加热的示意图；
图11为显示依照本发明的横置炉与横置的晶圆的横装载治具的组合之侧面图；
图12为图11之平面图；
图13为显示图11及图12之框架的断面2图。
具体实施方式
请参阅图2及图3。于图2及图3中与图1所示之先前技术相同的部份乃使用相同的图式编号。晶圆8乃成直立地置于直立炉内。而此加热炉的加热体2乃装设于炉体1之侧面而且并非习知之圆形，而是成直线与圆弧相连接之形状(见图2)。其结果，晶圆内的温度分布均一性可提高，而且炉的床占有面积(footprint)小。图中，W为晶圆的直径，W＝12英寸时，Lo(反应管之长径)＝400mm，L1(加热体2之最大内径)＝410mm，L2(加热体2之最小内径)＝70mm，t(管的最小内径)≈50mm，T(炉壁之厚度)＝70mm，亦即，在图2中，虽只显示1片之晶圆，亦可并列二片晶圆或于图中，d.D及D2分别近似地表示本发明及习知之炉的床占有面积。亦即本发明之床占有面积的减少率为d/D，亦即30-50％。图4及图5为于图2及图3图的构造中附加前述美国专利中公知的蓄热板12而同时处理二片之晶圆的改良型。亦即，蓄热板12与晶圆的装载无关，乃安装于加热炉的均热区内，而相互成对向直立装载的二片晶圆8之中间与该美国专利相同配置有蓄热板12。蓄热板12与晶圆8具有相同的形状。蓄热板12如果比晶圆为大，会于蓄热板产生温度的不均匀而不能达到晶圆的温度分布之均一化。蓄热板12乃支持于在反应管3之上部成凹状凹陷之部份3a之中。依照图4及与图5的构造，二片之晶圆可以与图1相同的温度分布进行热处理。而且每一晶圆片数之床面积占有率为图2的二倍。
于图6及图7中，晶圆8乃直立地装载于横置炉内。炉体1及加热体2乃分为进行反应的高温均热部及反应前将晶圆8保持在低温之低温均热部。13为排气管，14为将加热炉之入口侧关闭的盖子，20为开有如蜂巢之多数之孔而将反应空间内的气流均一化的整流板。
图6及图7为横置炉的炉体1a及1b间的宽度，较习知的炉可大幅减少1/2以下，床占有面积可降低。
图7所示的基板装载治具16乃用来装载晶圆8，乃由可在低温均热部及高温均热部之间可前进及后退之中空棒17及在其前端固接之弧状腕部19所构成。15为间隔片。中空棒17兼具晶圆移动治具及气体导引管的功能。固接于中空棒17之弧状腕部19乃支持住晶圆8之下部而成约120°展开之基部。而从此基部三个爪19a、19b伸出。二个爪19a乃对铅直线成约60°的展开位置的配置，主要用来防止晶圆倒下。亦即爪19a将晶圆8之边缘部把持住以防止晶圆倒下，而在其前端内部成叉状分开以将晶圆挟住。爪19b乃于铅直线上将晶圆8支持着。于中空棒17内之贯通的中心孔内气体流动防止晶圆12与爪19之附着。此将于后文详述。
图8为显示上述气体在爪19a流动的构造。爪19a支持晶圆8不向右侧倒下。爪19a乃固接于中空棒17之前端而同时具有挟持晶圆8及喷出气体之构造。在爪19a之外侧壳体21，于其内部形成与中空棒17内的气体的流通空间连通的空间23。而且上部成逆U字形弯曲，形成凹部27。另一方面，在外一侧壳体21的内部，配置有U字形的内侧构件22，且固接于前者。U字形内部构件22乃为凹部27的一部份。晶圆8之硅与爪19a之石英在1000℃左右起烧结反应而附着。附着的晶圆8与21，22间之磨擦力变大，有产生粒子(Particle)的危险。再者，将完全附着之8与22分离时亦会发生粒子。系照本发明，于U用形内侧构件22与外侧壳体22之间形成空隙24。所以气体从空间22流至U字形内侧构形22所围起之空间内，而从晶圆8与石英的接触部所存在的微小空隙间逸出。其结果，晶圆8与爪部磨擦而可防止粒子的产生。由于气体之比热小，在炉内先充份预加热至高温气体会从空隙24喷出，因而不会有损晶圆8内部的温度分布。
于图9中，于铅直方向之爪部19b形成气体喷出机构。25为与中空棒的气体流动空间连通的爪部19a的内部空间。26则为不活性气性或N2等与晶圆不易反应之气体流出之气体喷出孔。
本发明与可于晶圆成横置的横置炉实施。其具体实施例虽未图示，但图6之炉体12的侧面1a，1b乃成上下面。图10a及图10b为使用此具体例之基板装载治具之图。图10显示与图7所示者不同的晶圆装载治具。
亦即，于炉内前进后退之棒32之前端，固接有支持部30。于此支持部突出有八个销33。此销33之内侧之四个从晶圆8的下侧将其支撑住。在炉内的高温部，有支持框架31被安装着，同样地有八个销34突出。支持部30在移至支持框架31之上方后，一直下降至晶圆8与销34相接触，然后，后退之。
于图11所示的二片成横置的晶圆的横置炉中，如果成一段放置时占有体积少，而成多段堆积时实质上占有面积可更小。依此方式采用的基板装载治具(图未示)乃成上下分别装载1片晶圆于其分叉的叉部，而且于上下分开之棚架上支持住晶圆8。
于图11中另外图示了防止晶圆与石英烧结的其它方法。二片之晶圆藉由图示的基板装载治具装载于晶圆棚架之上。晶圆18藉由成90°展开的四个爪19(图12)从其底面支持着。爪19乃固接于平面轮廓成短形的框架42上。框架42介着图未示之基台设置于石英反应管3的平坦面3a之上。气体导管40从石英制反应管3的入口侧伸入框架42的区域内，而为了防止烧结的气体则从爪19之前端的气体喷出孔19c喷出。构成框架之管41(图13)的内部气体可通过而从喷出孔19c将气体喷出而使晶圆8被稍稍举起，因而防止烧结。
另外，请参阅图10c，依照本发明，在加热硅晶圆时，如果高温区在700℃以下的话，可不必预备加热立即将晶圆插入高温部，但是如果高温部在800℃以上时，如第10c图所示，先于均热区进行准备加热之后再将晶圆急速移至高温部以进行急速加热的话，较不易在晶圆产生应力。
如图7及图11所示，当使用横置炉时当然亦可如图10c所示先于均一加热的低温部均一加热之后移至高温部进行急速加热。
如以上说明，依照本发明，除了晶圆的温度分布良好外，亦可抑制半导体制造设备的高价投资。

Claims (4)

1、一种加热炉与半导体基板装载治具的组合，其为由耐火、断热材料所构成的炉体及含有配置于炉体内侧面的加热体所构成的直立炉或横置炉，以及在其反应管的均热区内可将一片或二片的半导体基板以其面与炉的长轴方向一致，且可自由前进后退的方式装载的基板装载治具，所构成的组合，其特征为前述加热体与前述半导体基板的面平行。
2、如权利要求1所述的加热炉与半导体基板装载治具的组合，其特征在于：其中一具有与前述一片或二片的半导体基板相同的形状且比该半导体基板的尺寸为小的蓄热板于前述均热区内，成与前述一片或二片半导体基板平行地设置。
3、一种使用权利要求1或2的加热炉与半导体基板装载治具的组合以对半导体基板进行快速热制程的半导体的制造方法。
4、一种半导体基板装载治具，其特征在于：于直立炉或横置炉的长轴方向的延伸方向设置，且具有中空部的气体导入管的前端区设置半导体基板的装载治具，而于该装载治具所设的半导基板的装载部，形成喷出由前述气体导入管送来而与该半导体基板不作化学反应的不活性气体的喷出孔。
CNB021269165A 2001-07-26 2002-07-25 加热炉与半导体基板装载治具的组合及半导体装置的制造方法 Expired - Fee Related CN1196177C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001225713 2001-07-26
JP2001-225713 2001-07-26
JP2001225713A JP3554297B2 (ja) 2001-07-26 2001-07-26 半導体基板熱処理装置及び半導体素子の製造方法

Publications (2)

Publication Number Publication Date
CN1416153A CN1416153A (zh) 2003-05-07
CN1196177C true CN1196177C (zh) 2005-04-06

Family

ID=19058657

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021269165A Expired - Fee Related CN1196177C (zh) 2001-07-26 2002-07-25 加热炉与半导体基板装载治具的组合及半导体装置的制造方法

Country Status (5)

Country Link
US (2) US6793734B2 (zh)
JP (1) JP3554297B2 (zh)
KR (1) KR100524390B1 (zh)
CN (1) CN1196177C (zh)
TW (1) TW554419B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135659B2 (en) * 2001-03-05 2006-11-14 Tokyo Electron Limited Heat treatment method and heat treatment system
JP3554297B2 (ja) * 2001-07-26 2004-08-18 株式会社エフティーエル 半導体基板熱処理装置及び半導体素子の製造方法
JP2004260174A (ja) * 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 半導体素子製造装置
JP4560660B2 (ja) * 2003-03-14 2010-10-13 三井造船株式会社 半導体熱処理装置および方法
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
JP4534619B2 (ja) * 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
US20070281086A1 (en) * 2006-06-05 2007-12-06 Hon Hai Precision Industry Co., Ltd. Apparatus and method for producing carbon nanotubes
JP5205737B2 (ja) * 2006-10-13 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの保持方法および保持治具
JP5173225B2 (ja) * 2007-03-30 2013-04-03 三井造船株式会社 加熱システム
US7977258B2 (en) * 2007-04-06 2011-07-12 Mattson Technology, Inc. Method and system for thermally processing a plurality of wafer-shaped objects
US8007275B2 (en) * 2008-01-25 2011-08-30 Micron Technology, Inc. Methods and apparatuses for heating semiconductor wafers
US8603246B2 (en) 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
US8754381B2 (en) * 2011-11-09 2014-06-17 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for inspecting UV illuminance in multi-level bake furnace for TFT-LCD manufacturing process and pickup assembly device for performing the method
DE102011056211B3 (de) * 2011-12-09 2013-02-07 Degudent Gmbh Verfahren und Vorrichtung zum Sintern von Sintergut
CN104233460B (zh) * 2013-06-09 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及设置有该反应腔室的mocvd设备
US9808891B2 (en) 2014-01-16 2017-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool and method of reflow
DE102018204107A1 (de) * 2018-03-17 2019-09-19 centrotherm international AG Heizeinheit für Horizontalofen

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
US4819579A (en) * 1981-01-14 1989-04-11 Northern Telecom Limited Coating of semiconductor wafers and apparatus therefor
CA1158109A (en) * 1981-01-14 1983-12-06 George M. Jenkins Coating of semiconductor wafers and apparatus therefor
JPS58116724A (ja) * 1981-12-29 1983-07-12 Pioneer Electronic Corp 半導体製造装置
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
JPS62299017A (ja) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd 熱処理装置
JPH088220B2 (ja) * 1988-09-05 1996-01-29 株式会社日立製作所 半導体ウェハの熱処理装置、及び熱処理方法
JPH0744159B2 (ja) * 1987-09-11 1995-05-15 株式会社日立製作所 半導体ウエハの熱処理装置および熱処理方法
JPS6471118A (en) * 1987-09-11 1989-03-16 Hitachi Ltd Thermal treatment equipment for semiconductor wafer
JP2728488B2 (ja) * 1989-02-17 1998-03-18 株式会社日立製作所 半導体ウエハの熱処理装置
US4911638A (en) * 1989-05-18 1990-03-27 Direction Incorporated Controlled diffusion environment capsule and system
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
JP3292540B2 (ja) * 1993-03-03 2002-06-17 東京エレクトロン株式会社 熱処理装置
JP3190165B2 (ja) * 1993-04-13 2001-07-23 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP3249240B2 (ja) * 1993-06-15 2002-01-21 三洋電機株式会社 電子レンジ
KR100297282B1 (ko) * 1993-08-11 2001-10-24 마쓰바 구니유키 열처리장치 및 열처리방법
JP3824675B2 (ja) * 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
TW291589B (zh) * 1995-03-30 1996-11-21 Ftl Co Ltd
US5743967A (en) * 1995-07-13 1998-04-28 Semiconductor Energy Laboratory Co. Low pressure CVD apparatus
JPH09260364A (ja) * 1996-03-26 1997-10-03 Tokyo Electron Ltd 熱処理方法および熱処理装置
JP3501601B2 (ja) * 1996-10-31 2004-03-02 東京エレクトロン株式会社 縦型熱処理装置およその熱処理炉のメンテナンス方法
JP4071315B2 (ja) * 1996-12-18 2008-04-02 株式会社山形信越石英 ウエーハ熱処理装置
JPH11176822A (ja) * 1997-12-05 1999-07-02 Hitachi Ltd 半導体処理装置
JP2000286200A (ja) * 1999-03-31 2000-10-13 Kokusai Electric Co Ltd 熱処理方法および熱処理装置
KR20010058712A (ko) * 1999-12-30 2001-07-06 강웅식 반도체 웨이퍼의 고속 열처리 시스템
JP3554297B2 (ja) * 2001-07-26 2004-08-18 株式会社エフティーエル 半導体基板熱処理装置及び半導体素子の製造方法
US6753506B2 (en) * 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing

Also Published As

Publication number Publication date
US6793734B2 (en) 2004-09-21
KR100524390B1 (ko) 2005-10-28
TW554419B (en) 2003-09-21
US20040175878A1 (en) 2004-09-09
JP3554297B2 (ja) 2004-08-18
CN1416153A (zh) 2003-05-07
KR20030011617A (ko) 2003-02-11
JP2002110686A (ja) 2002-04-12
US20030031974A1 (en) 2003-02-13

Similar Documents

Publication Publication Date Title
CN1196177C (zh) 加热炉与半导体基板装载治具的组合及半导体装置的制造方法
US5178639A (en) Vertical heat-treating apparatus
US6108937A (en) Method of cooling wafers
US8216422B2 (en) Substrate support bushing
CN102163573B (zh) 支承体机构、负载锁定装置、处理装置及搬送机构
KR100260120B1 (ko) 열처리 장치
US6276072B1 (en) Method and apparatus for heating and cooling substrates
US6991684B2 (en) Heat-treating apparatus and heat-treating method
JPH05152224A (ja) 急速熱処理装置
CN101866825B (zh) 衬底处理设备、衬底退火方法及半导体器件制造方法
CN1992192A (zh) 半导体处理用的立式晶舟及立式热处理装置
US20030136341A1 (en) Wafer lift pin for manufacturing a semiconductor device
JP2001284276A (ja) 基板処理装置
KR0139026B1 (ko) 보우트 반송방법 및 열처리 장치
JP2000150403A (ja) 保温筒および縦型熱処理装置
JP2002313796A (ja) 基板熱処理装置
US6957690B1 (en) Apparatus for thermal treatment of substrates
US6709470B2 (en) Benchtop processing
JP2639435B2 (ja) 熱処理装置
JPH07183359A (ja) 基板搬送装置
JPH0964158A (ja) 試料昇降装置
JPH02263454A (ja) 熱処理装置
TWI850438B (zh) 基板處理方法及基板處理裝置
JPH04120724A (ja) 縦型熱処理装置
JPH11233447A (ja) 半導体基板に対する縦型表面処理装置の構造

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050406

Termination date: 20120725