CN1193430C - 使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 - Google Patents
使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 Download PDFInfo
- Publication number
- CN1193430C CN1193430C CNB01122021XA CN01122021A CN1193430C CN 1193430 C CN1193430 C CN 1193430C CN B01122021X A CNB01122021X A CN B01122021XA CN 01122021 A CN01122021 A CN 01122021A CN 1193430 C CN1193430 C CN 1193430C
- Authority
- CN
- China
- Prior art keywords
- tube
- carbon nano
- vertical
- source
- insulating barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052799 carbon Inorganic materials 0.000 title 1
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 100
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 100
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000001962 electrophoresis Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000012528 membrane Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 239000012811 non-conductive material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 abstract description 10
- 230000010354 integration Effects 0.000 abstract 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000002071 nanotube Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/723—On an electrically insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
提供使用碳纳米管能够实现高密度集成,即万亿比特规模集成的竖直纳米尺寸晶体管,及其制造方法。在使用碳纳米管的竖直纳米尺寸晶体管中,具有几个纳米直径的孔形成在诸如间隔几个纳米的矾土的绝缘层中,以通过CVD,电泳或机械压缩,在纳米尺寸的孔中竖直排列碳纳米管,以用作沟道。而且,使用普通半导体制造方法,在碳纳米管附近形成栅,然后源和漏形成在每个碳纳米管的上下部分,从而制做出具有电子开关特征的竖直纳米尺寸晶体管。
Description
技术领域
本发明涉及一种使用碳纳米管能够实现高密度集成,即万亿比特规模集成的竖直纳米尺寸晶体管及其制造方法。
背景技术
使用常规硅衬底生产的开关器件基本上被构造成使得杂质扩散区,隔离区和沟道区水平连接。由多个开关器件组成的集成电路也被构造成使得水平排列每一个开关器件,以高密度集成。在杂质扩散区和隔离区形成在硅衬底上的情况中,在加工精度和集成中存在着限制。
金属氧化物半导体场效应晶体管(MOSFET)是一种最典型使用的精细开关器件。实际上,最小图形尺寸为0.25μm的256兆DRAM的面积大约为0.72μm2,最小图形尺寸为0.18μm的1千兆DRAM的面积大约为0.32μm2,最小图形尺寸为0.13μm的4千兆DRAM的面积大约为0.18μm2,并且最小图形尺寸为0.1μm的16千兆DRAM的面积大约为0.1μm2。
为克服小型化常规开关器件中存在的问题,已提议使用碳纳米管的开关器件。然而,提议的器件仍具有与其它常规开关器件相似的水平结构,并且难以控制各个碳纳米管。
因此,难以实现使用碳纳米管的器件的高密度集成。
发明内容
为解决上述问题,本发明提供一种尺寸范围为几十纳米到一个微米的竖直晶体管,其使用万亿比特(tera-bit)规模的碳纳米管作为沟道,每一个碳纳米管具有几纳米的直径,并通过竖直生长和选择沉积生长在具有纳米尺寸孔的非传导衬底上。每一个碳纳米管的下上部分分别连接到源和漏上,栅插入到它们之间,用于执行开关转换。而且,本发明提供一种竖直纳米尺寸晶体管的制造方法。
具体地,提供一种使用碳纳米管的竖直纳米尺寸晶体管,纳米管包括具有纳米尺寸直径孔的绝缘层,提供在孔中竖直排列的碳纳米管,在碳纳米管附近的绝缘层上形成的栅,沉积在栅上以填充孔的非传导薄膜,在非传导薄膜和碳纳米管上形成的漏,在绝缘层和碳纳米管下形成的源。
在本发明中,绝缘层优选由Al2O3和Si中选出的一种材料形成,并且源和沟道优选由金属薄膜形成。
根据本发明的另一方面,提供使用碳纳米管的竖直纳米尺寸晶体管的制造方法,包括(a)在半导体衬底上形成源的步骤,(b)使用非传导材料形成绝缘层和在与间隔几个纳米的源对应的部分上形成具有纳米尺寸直径孔的步骤,(c)在孔中的源上竖直生长碳纳米管的步骤,(d)在碳纳米管附近形成栅的步骤,(e)在栅上沉积非传导薄膜以填充孔的步骤,以及(f)在非传导薄膜和碳纳米管上形成漏的步骤。
在步骤(b),绝缘材料是从Al2O3和Si中优选出的一种材料,并且通过从化学气相沉积,电泳和机械压缩方法中选出的一种方法,优选执行步骤(c)。
而且,本发明提供一种使用碳纳米管的竖直纳米尺寸晶体管,纳米管包括具有纳米尺寸直径孔的绝缘层,提供在孔中竖直排列的碳纳米管,在绝缘层和碳纳米管上形成的漏,沉积在漏上的非传导薄膜,在非传导薄膜上形成的栅,在绝缘层和碳纳米管下形成的源。
在本发明的实施方案中,绝缘层优选由Al2O3和Si中选出的一种材料形成,并且源和沟道优选由金属薄膜形成。
或者,本发明提供一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法,包括(a)在半导体衬底上形成源的步骤,(b)使用非传导材料形成绝缘层和在与间隔几个纳米的源对应的部分上形成具有纳米尺寸直径孔的步骤,(c)在孔中的源上竖直生长碳纳米管的步骤,(d)在非传导薄膜和碳纳米管上形成漏的步骤,(e)在漏上沉积非传导薄膜的步骤,以及(f)在非传导薄膜上形成栅的步骤。
根据本发明的该实施方案,在步骤(b)中非传导材料是从Al2O3和Si中优选出的一种材料,并且通过从化学气相沉积,电泳和机械压缩方法中选出的一种方法,优选执行步骤(c)。
附图说明
参考附图,通过详细描述本发明优选实施方案,本发明上述目标和优点将变得更加明白,其中:
图1是根据本发明第一实施方案,使用碳纳米管的竖直纳米尺寸晶体管的竖直横截面视图;
图2是图1示出的竖直纳米尺寸晶体管的平面图;
图3A至3F是竖直横截面视图,示出了根据本发明使用碳纳米管的竖直纳米尺寸晶体管的制造方法中的加工步骤;
图4A和4B是根据本发明第二实施方案,使用碳纳米管的竖直纳米尺寸晶体管的竖直横截面视图和透视图;
图5A和5B是根据本发明,在竖直的纳米尺寸晶体管生产过程中,竖直生长的碳纳米管的透射电子显微镜(TEM)照片,其中图5A示出了直径大约为50nm的碳纳米管,并且图5B示出了直径大约为20nm的碳纳米管;
图6A是使用竖直生长的碳纳米管,利用电子束光刻法形成的电极图形的TEM照片,并且图6B是图6A的放大图;
图7是根据本发明,使用碳纳米管的竖直纳米尺寸晶体管的I-V特征曲线;
图8A和8B是根据本发明第二实施方案,在竖直的纳米尺寸晶体管的栅上施加偏压时的I-V特征曲线;以及
图9A和9B是直径大约为20nm的碳纳米管样品的I-V特征曲线,该碳纳米管在大约400℃至大约800℃退火。
具体实施方式
根据附图,将详细描述根据本发明使用碳纳米管的竖直纳米尺寸晶体管及其制造方法。
首先解释根据本发明第一实施方案使用碳纳米管的竖直纳米尺寸晶体管。如图1所示,竖直排列的碳纳米管的单元构造如下。
首先,通过竖直生长和选择沉积,碳纳米管100布置在具有纳米尺寸孔10′的非传导衬底10上。栅20形成在碳纳米管100附近的非传导10上,绝缘薄膜30沉积在其上以填充孔10′。这里,诸如矾土的绝缘薄膜被用作非传导衬底10,并且孔的尺寸和相邻孔的距离可被调节到几个纳米的尺寸。以如此方式,可以得到高密度集成,即万亿比特规模集成。
换句话说,具有纳米尺寸直径的竖直生长的碳纳米管100被用作沟道,并且被构造得其下上部分分别连接到源40和漏50上,栅20插入到其间,使得可以执行开关。由于晶体管的尺寸可以做到几十纳米到大约一微米或更小的范围,因此可以得到高密度集成。参考图2,该图是图1示出的竖直的纳米尺寸晶体管的平面图,碳纳米管的直径范围为1至200nm,优选1-50nm,并且非传导薄膜30的宽度范围为50至500nm,优选50-100nm。
使用如此构造碳纳米管的竖直纳米尺寸晶体管,其特征在于电子由源40提供,以根据施加到栅20的电压精密地控制电流,然后电子被发射到漏50。由于单元是纳米尺寸的,可以控制电流具有小的负荷,即,纳米尺寸的晶体管具有低功率特征的优点。
图3A至3F是竖直横截面视图,示出了根据本发明使用碳纳米管的竖直纳米尺寸晶体管的制造方法中的加工步骤。参考该图,现在讨论使用碳纳米管的竖直纳米尺寸晶体管的制造方法的加工步骤。
如图3A所示,源40形成在半导体衬底200上。
然后,如图3B所示,使用诸如Al2O3或Si的非传导体形成绝缘层10,并且孔10′形成在源40上的绝缘层10的一部分中。
如图3C所示,通过CVD,电泳或机械压缩碳纳米管100被竖直生长在孔10′中的源40上。换句话说,形成孔10′,然后碳纳米管100只选择生长在孔10′中。
接下来,如图3D所示,栅20形成在碳纳米管100附近。
如图3E所示,非传导薄膜30沉积在栅20上以填充孔10′。
最后,如图3F所示,漏50形成在非传导薄膜30和碳纳米管100上,从而完成竖直的纳米尺寸晶体管。
根据图4A和4B,现在讨论根据本发明第二实施方案使用碳纳米管的竖直纳米尺寸的晶体管,除了栅20形成在漏50上之外,该晶体管与根据第一实施方案的竖直纳米尺寸的晶体管相同。
首先,通过竖直生长和选择沉积,碳纳米管100生长在具有纳米尺寸孔(未示出)的非传导衬底10上并被排列。源40和漏50连接到碳纳米管100的下上部分。非传导薄膜30形成在漏50上,栅20形成在非传导薄膜30上。这里,非传导薄膜30优选由SiO2形成。
使用具有纳米尺寸直径的如此竖直生长的碳纳米管100作为沟道,其下上部分分别连接到源40和漏50上,栅20设置在漏50上,于是可以执行开关。
图4B是图4A示出的使用碳纳米管的竖直纳米尺寸晶体管的透视图,其中源线和漏线在碳纳米管生长的位置交叉,以形成单元。而且,栅线在其不接触漏线的状态中打开或关闭电流。
根据本发明第一和第二实施方案使用碳纳米管竖直纳米尺寸晶体管的制造方法与碳纳米管100的生长步骤相似,但在栅20和漏50之间的位置关系上不同。也就是说,根据第二实施方案,在绝缘层10中形成碳纳米管后,漏50形成在绝缘层10和碳纳米管100上,这是由于栅20形成在漏50上,与第一实施方案不同。
形成漏50后,非传导层30形成在其上面。最后,栅20形成在非传导层30上,从而完成竖直的纳米尺寸晶体管。
图5A和5B是根据本发明,在竖直的纳米尺寸晶体管生产过程中,竖直生长的碳纳米管的TEM照片,其中图5A示出了直径大约为50nm的碳纳米管,并且图5B示出了直径大约为20nm的碳纳米管。
图6A是使用竖直生长的碳纳米管,利用电子束光刻法形成的电极图案的TEM照片,并且图6B是图6A的放大图。参考这些图,应当理解在电极图案中竖直生长的碳纳米管和金属电极连接。
图7是根据本发明,使用碳纳米管的竖直纳米尺寸晶体管的I-V特征曲线,从其中应当理解在低温电导测量中存在能量带隙,并且碳纳米管显示为晶体管的特征。
图8A和8B是根据本发明第二实施方案,在竖直纳米尺寸晶体管的栅上施加偏压时的I-V特征曲线,其中图8A示出了施加正偏压的情况,图8B示出了施加负偏压的情况。参考图8A和8B,应当理解电流只在一个方向流动。
图9A和9B是直径大约为20nm的碳纳米管样品的I-V特征曲线,该碳纳米管在大约400℃至大约800℃退火。具体地,图9A示出了在碳纳米管下面存在氧化层的情况,图9B示出了碳纳米管下面不存在氧化层的情况。应当理解碳纳米管可充当晶体管。
如上所述,在根据本发明使用碳纳米管的竖直纳米尺寸晶体管中,具有几纳米直径的孔被形成在诸如间隔几个纳米的矾土的绝缘层中,以通过CVD,电泳和机械压缩在纳米尺寸的孔中竖直排列碳纳米管,以用作沟道。而且,使用普通半导体制造方法,栅形成在碳纳米管附近,然后源和漏被形成在每个碳纳米管的下上部分,从而制作出具有电子开关特征的竖直纳米尺寸晶体管。
因此,利用碳纳米管的本质特征形成万亿比特规模的竖直类型晶体管,以克服常规半导体技术的限制。而且,根据本发明使用碳纳米管的竖直纳米尺寸晶体管具有低功率消耗。
Claims (12)
1.一种使用碳纳米管的竖直纳米尺寸晶体管包含:
具有孔的绝缘层;
竖直排列在孔中的碳纳米管;
在碳纳米管附近形成在绝缘层上的栅;
沉积在栅上以填充孔的非传导薄膜;
在非传导薄膜和碳纳米管上形成的漏;以及
在绝缘层和碳纳米管下形成的源。
2.如权利要求1使用碳纳米管的竖直纳米尺寸晶体管,其中绝缘层是由Al2O3和Si中选出的一种材料形成。
3.如权利要求1使用碳纳米管的竖直纳米尺寸晶体管,其中源和漏由金属薄膜形成。
4.一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法,包含以下步骤:
(a)在半导体衬底上形成源;
(b)在衬底和源上使用非传导材料形成绝缘层和在绝缘层中形成孔以暴露源;
(c)在孔中的源上竖直生长碳纳米管;
(d)在碳纳米管附近形成栅;
(e)在栅上沉积非传导薄膜以填充孔;以及
(f)在非传导薄膜和碳纳米管上形成漏。
5.如权利要求4的方法,其中在步骤(b)中,非传导材料是选自Al2O3和Si的一种材料。
6.如权利要求4的方法,其中通过从化学汽相沉积,电泳和机械压缩方法中选出的一种方法,执行步骤(c)。
7.一种使用碳纳米管的竖直纳米尺寸晶体管包含:
具有孔的绝缘层;
竖直排列在孔中的碳纳米管;
在绝缘层和碳纳米管上形成的漏;
沉积在漏上的非传导薄膜;
在非传导薄膜上形成的栅;以及
在绝缘层和碳纳米管下形成的源。
8.如权利要求7使用碳纳米管的竖直纳米尺寸晶体管,其中绝缘层是由Al2O3和Si中选出的一种材料形成。
9.如权利要求7使用碳纳米管的竖直纳米尺寸晶体管,其中源和漏由金属薄膜形成。
10.一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法,包含以下步骤:
(a)在半导体衬底上形成源;
(b)在衬底和源上使用非传导材料形成绝缘层和在绝缘层中形成孔以暴露源;(c)在孔中的源上竖直生长碳纳米管;
(d)在非传导薄膜和碳纳米管上形成漏;
(e)在漏上沉积非传导薄膜;以及
(f)在非传导薄膜上形成栅。
11.如权利要求10的方法,其中在步骤(b)中,非传导材料是选自Al2O3和Si的一种材料。
12.如权利要求10的方法,其中通过从化学汽相沉积,电泳和机械压缩方法中选出的一种方法,执行步骤(c)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR35703/2000 | 2000-06-27 | ||
KR1020000035703A KR100360476B1 (ko) | 2000-06-27 | 2000-06-27 | 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1330412A CN1330412A (zh) | 2002-01-09 |
CN1193430C true CN1193430C (zh) | 2005-03-16 |
Family
ID=19674222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01122021XA Expired - Lifetime CN1193430C (zh) | 2000-06-27 | 2001-06-22 | 使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (4) | US6566704B2 (zh) |
JP (1) | JP4338910B2 (zh) |
KR (1) | KR100360476B1 (zh) |
CN (1) | CN1193430C (zh) |
Families Citing this family (210)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10036897C1 (de) * | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors |
US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
JP2003017508A (ja) * | 2001-07-05 | 2003-01-17 | Nec Corp | 電界効果トランジスタ |
KR100450825B1 (ko) * | 2002-02-09 | 2004-10-01 | 삼성전자주식회사 | 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법 |
US6515325B1 (en) | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
US7392230B2 (en) * | 2002-03-12 | 2008-06-24 | Knowmtech, Llc | Physical neural network liquid state machine utilizing nanotechnology |
US7412428B2 (en) | 2002-03-12 | 2008-08-12 | Knowmtech, Llc. | Application of hebbian and anti-hebbian learning to nanotechnology-based physical neural networks |
US9269043B2 (en) | 2002-03-12 | 2016-02-23 | Knowm Tech, Llc | Memristive neural processor utilizing anti-hebbian and hebbian technology |
US7398259B2 (en) | 2002-03-12 | 2008-07-08 | Knowmtech, Llc | Training of a physical neural network |
US6889216B2 (en) | 2002-03-12 | 2005-05-03 | Knowm Tech, Llc | Physical neural network design incorporating nanotechnology |
US20040039717A1 (en) * | 2002-08-22 | 2004-02-26 | Alex Nugent | High-density synapse chip using nanoparticles |
US8156057B2 (en) * | 2003-03-27 | 2012-04-10 | Knowm Tech, Llc | Adaptive neural network utilizing nanotechnology-based components |
US7049625B2 (en) * | 2002-03-18 | 2006-05-23 | Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. | Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell |
US6891227B2 (en) * | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
KR100451084B1 (ko) * | 2002-04-11 | 2004-10-02 | 학교법인 선문학원 | 탄소나노튜브 가스센서의 제조방법 |
US7752151B2 (en) * | 2002-06-05 | 2010-07-06 | Knowmtech, Llc | Multilayer training in a physical neural network formed utilizing nanotechnology |
JP2004040844A (ja) * | 2002-06-28 | 2004-02-05 | Shinano Kenshi Co Ltd | 整流子およびこれを用いた回転電機 |
US6979947B2 (en) | 2002-07-09 | 2005-12-27 | Si Diamond Technology, Inc. | Nanotriode utilizing carbon nanotubes and fibers |
US7827131B2 (en) * | 2002-08-22 | 2010-11-02 | Knowm Tech, Llc | High density synapse chip using nanoparticles |
US7012266B2 (en) | 2002-08-23 | 2006-03-14 | Samsung Electronics Co., Ltd. | MEMS-based two-dimensional e-beam nano lithography device and method for making the same |
AU2003304297A1 (en) * | 2002-08-23 | 2005-01-21 | Sungho Jin | Article comprising gated field emission structures with centralized nanowires and method for making the same |
JP4547852B2 (ja) * | 2002-09-04 | 2010-09-22 | 富士ゼロックス株式会社 | 電気部品の製造方法 |
TW560042B (en) * | 2002-09-18 | 2003-11-01 | Vanguard Int Semiconduct Corp | ESD protection device |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
CN1745468B (zh) * | 2002-09-30 | 2010-09-01 | 纳米系统公司 | 大面积纳米启动宏电子衬底及其用途 |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
AU2003283973B2 (en) * | 2002-09-30 | 2008-10-30 | Oned Material Llc | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7619562B2 (en) * | 2002-09-30 | 2009-11-17 | Nanosys, Inc. | Phased array systems |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
CN102569349A (zh) * | 2002-09-30 | 2012-07-11 | 纳米系统公司 | 使用纳米线晶体管的集成显示器 |
US7507987B2 (en) * | 2002-10-11 | 2009-03-24 | Massachusetts Institute Of Technology | Method of making packets of nanostructures |
US7466069B2 (en) * | 2002-10-29 | 2008-12-16 | President And Fellows Of Harvard College | Carbon nanotube device fabrication |
DE10250984A1 (de) * | 2002-10-29 | 2004-05-19 | Hahn-Meitner-Institut Berlin Gmbh | Feldeffekttransistor sowie Verfahren zu seiner Herstellung |
US7253434B2 (en) * | 2002-10-29 | 2007-08-07 | President And Fellows Of Harvard College | Suspended carbon nanotube field effect transistor |
DE10250830B4 (de) * | 2002-10-31 | 2015-02-26 | Qimonda Ag | Verfahren zum Herstellung eines Schaltkreis-Arrays |
DE10250868B8 (de) * | 2002-10-31 | 2008-06-26 | Qimonda Ag | Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors |
DE10250834A1 (de) * | 2002-10-31 | 2004-05-19 | Infineon Technologies Ag | Speicherzelle, Speicherzellen-Anordnung, Strukturier-Anordnung und Verfahren zum Herstellen einer Speicherzelle |
DE10250829B4 (de) * | 2002-10-31 | 2006-11-02 | Infineon Technologies Ag | Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle |
KR100790859B1 (ko) * | 2002-11-15 | 2008-01-03 | 삼성전자주식회사 | 수직 나노튜브를 이용한 비휘발성 메모리 소자 |
JP4251268B2 (ja) * | 2002-11-20 | 2009-04-08 | ソニー株式会社 | 電子素子及びその製造方法 |
KR100489800B1 (ko) * | 2002-11-26 | 2005-05-16 | 한국전자통신연구원 | 캐패시터 및 그 제조방법 |
TWI220162B (en) * | 2002-11-29 | 2004-08-11 | Ind Tech Res Inst | Integrated compound nano probe card and method of making same |
US6870361B2 (en) * | 2002-12-21 | 2005-03-22 | Agilent Technologies, Inc. | System with nano-scale conductor and nano-opening |
US7183568B2 (en) * | 2002-12-23 | 2007-02-27 | International Business Machines Corporation | Piezoelectric array with strain dependant conducting elements and method therefor |
KR100493166B1 (ko) | 2002-12-30 | 2005-06-02 | 삼성전자주식회사 | 수직나노튜브를 이용한 메모리 |
US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
KR20040066270A (ko) * | 2003-01-17 | 2004-07-27 | 삼성에스디아이 주식회사 | 카본계 물질로 이루어진 도전층이 형성된 애노드 기판을갖는 평판 디스플레이 장치 |
WO2004070712A1 (ja) * | 2003-02-06 | 2004-08-19 | Fujitsu Limited | 磁気記録媒体及びその製造方法、磁気記録媒体に用いられる磁気媒体基板、並びに磁気記憶装置 |
DE10307815B3 (de) * | 2003-02-24 | 2004-11-11 | Infineon Technologies Ag | Integriertes elektronisches Bauelement mit gezielt erzeugten Nanoröhren in vertikalen Strukturen und dessen Herstellungsverfahren |
KR100988080B1 (ko) * | 2003-02-27 | 2010-10-18 | 삼성전자주식회사 | 파묻힌 게이트 구조를 갖는 탄소나노튜브 트랜지스터 및그 제조 방법 |
EP1609176A2 (en) * | 2003-03-21 | 2005-12-28 | North Carolina State University | Method and systems for single- or multi-period edge definition lithography |
US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
TWI220163B (en) * | 2003-04-24 | 2004-08-11 | Ind Tech Res Inst | Manufacturing method of high-conductivity nanometer thin-film probe card |
WO2004105140A1 (ja) | 2003-05-22 | 2004-12-02 | Fujitsu Limited | 電界効果トランジスタ及びその製造方法 |
US7095645B2 (en) | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US7199498B2 (en) | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US7148579B2 (en) * | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
KR101015498B1 (ko) * | 2003-06-14 | 2011-02-21 | 삼성전자주식회사 | 수직 카본나노튜브 전계효과트랜지스터 및 그 제조방법 |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
DE10331528A1 (de) * | 2003-07-11 | 2005-02-03 | Infineon Technologies Ag | DRAM-Halbleiterspeicherzelle sowie Verfahren zu deren Herstellung |
US7426501B2 (en) | 2003-07-18 | 2008-09-16 | Knowntech, Llc | Nanotechnology neural network methods and systems |
DE10335813B4 (de) * | 2003-08-05 | 2009-02-12 | Infineon Technologies Ag | IC-Chip mit Nanowires |
DE10339529A1 (de) * | 2003-08-21 | 2005-03-24 | Hahn-Meitner-Institut Berlin Gmbh | Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung |
DE10339531A1 (de) * | 2003-08-21 | 2005-03-31 | Hahn-Meitner-Institut Berlin Gmbh | Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung |
FR2860780B1 (fr) * | 2003-10-13 | 2006-05-19 | Centre Nat Rech Scient | Procede de synthese de structures filamentaires nanometriques et composants pour l'electronique comprenant de telles structures |
JP4762522B2 (ja) * | 2003-10-28 | 2011-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5250615B2 (ja) * | 2003-10-28 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7374793B2 (en) * | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
US7038299B2 (en) | 2003-12-11 | 2006-05-02 | International Business Machines Corporation | Selective synthesis of semiconducting carbon nanotubes |
US7932549B2 (en) * | 2003-12-18 | 2011-04-26 | International Business Machines Corporation | Carbon nanotube conductor for trench capacitors |
KR20060109956A (ko) * | 2003-12-23 | 2006-10-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 이종접합을 포함하는 반도체 장치 |
US8013359B2 (en) * | 2003-12-31 | 2011-09-06 | John W. Pettit | Optically controlled electrical switching device based on wide bandgap semiconductors |
US20050145838A1 (en) * | 2004-01-07 | 2005-07-07 | International Business Machines Corporation | Vertical Carbon Nanotube Field Effect Transistor |
JP3997991B2 (ja) * | 2004-01-14 | 2007-10-24 | セイコーエプソン株式会社 | 電子装置 |
DE102004003374A1 (de) * | 2004-01-22 | 2005-08-25 | Infineon Technologies Ag | Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren |
US7211844B2 (en) | 2004-01-29 | 2007-05-01 | International Business Machines Corporation | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
US20050167655A1 (en) * | 2004-01-29 | 2005-08-04 | International Business Machines Corporation | Vertical nanotube semiconductor device structures and methods of forming the same |
US8025960B2 (en) * | 2004-02-02 | 2011-09-27 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US20110039690A1 (en) * | 2004-02-02 | 2011-02-17 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US7553371B2 (en) * | 2004-02-02 | 2009-06-30 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US7829883B2 (en) | 2004-02-12 | 2010-11-09 | International Business Machines Corporation | Vertical carbon nanotube field effect transistors and arrays |
KR101050468B1 (ko) * | 2004-02-14 | 2011-07-19 | 삼성에스디아이 주식회사 | 바이오 칩 및 이를 이용한 바이오 분자 검출 시스템 |
US7456482B2 (en) * | 2004-03-22 | 2008-11-25 | Cabot Microelectronics Corporation | Carbon nanotube-based electronic switch |
US7115971B2 (en) | 2004-03-23 | 2006-10-03 | Nanosys, Inc. | Nanowire varactor diode and methods of making same |
EP1747577A2 (en) * | 2004-04-30 | 2007-01-31 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US20060086994A1 (en) * | 2004-05-14 | 2006-04-27 | Susanne Viefers | Nanoelectromechanical components |
EP1774575A2 (en) * | 2004-05-17 | 2007-04-18 | Cambrios Technology Corp. | Biofabrication of transistors including field effect transistors |
US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
GB0413310D0 (en) * | 2004-06-15 | 2004-07-14 | Koninkl Philips Electronics Nv | Nanowire semiconductor device |
US7109546B2 (en) | 2004-06-29 | 2006-09-19 | International Business Machines Corporation | Horizontal memory gain cells |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
AU2005325265A1 (en) * | 2004-07-07 | 2006-07-27 | Nanosys, Inc. | Systems and methods for harvesting and integrating nanowires |
US7194912B2 (en) * | 2004-07-13 | 2007-03-27 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon nanotube-based sensor and method for continually sensing changes in a structure |
WO2007024204A2 (en) | 2004-07-19 | 2007-03-01 | Ambient Systems, Inc. | Nanometer-scale electrostatic and electromagnetic motors and generators |
KR100666187B1 (ko) * | 2004-08-04 | 2007-01-09 | 학교법인 한양학원 | 나노선을 이용한 수직형 반도체 소자 및 이의 제조 방법 |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US20080020499A1 (en) * | 2004-09-10 | 2008-01-24 | Dong-Wook Kim | Nanotube assembly including protective layer and method for making the same |
US7943418B2 (en) * | 2004-09-16 | 2011-05-17 | Etamota Corporation | Removing undesirable nanotubes during nanotube device fabrication |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7462890B1 (en) | 2004-09-16 | 2008-12-09 | Atomate Corporation | Nanotube transistor integrated circuit layout |
US7776307B2 (en) * | 2004-09-16 | 2010-08-17 | Etamota Corporation | Concentric gate nanotube transistor devices |
US20060060863A1 (en) * | 2004-09-22 | 2006-03-23 | Jennifer Lu | System and method for controlling nanostructure growth |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7233071B2 (en) | 2004-10-04 | 2007-06-19 | International Business Machines Corporation | Low-k dielectric layer based upon carbon nanostructures |
JP2008515654A (ja) * | 2004-10-12 | 2008-05-15 | ナノシス・インク. | 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス |
US7473943B2 (en) * | 2004-10-15 | 2009-01-06 | Nanosys, Inc. | Gate configuration for nanowire electronic devices |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
WO2006046178A1 (en) * | 2004-10-27 | 2006-05-04 | Koninklijke Philips Electronics N.V. | Semiconductor device with tunable energy band gap |
US20080012461A1 (en) * | 2004-11-09 | 2008-01-17 | Nano-Proprietary, Inc. | Carbon nanotube cold cathode |
CN101263078B (zh) | 2004-11-24 | 2012-12-26 | 奈米系统股份有限公司 | 适用于纳米线薄膜的接触掺杂和退火系统以及工艺 |
US20060113524A1 (en) * | 2004-12-01 | 2006-06-01 | Colin Bill | Polymer-based transistor devices, methods, and systems |
US7560366B1 (en) | 2004-12-02 | 2009-07-14 | Nanosys, Inc. | Nanowire horizontal growth and substrate removal |
US7202173B2 (en) * | 2004-12-20 | 2007-04-10 | Palo Alto Research Corporation Incorporated | Systems and methods for electrical contacts to arrays of vertically aligned nanorods |
US7535016B2 (en) * | 2005-01-31 | 2009-05-19 | International Business Machines Corporation | Vertical carbon nanotube transistor integration |
US7502769B2 (en) * | 2005-01-31 | 2009-03-10 | Knowmtech, Llc | Fractal memory and computational methods and systems based on nanotechnology |
US7409375B2 (en) * | 2005-05-23 | 2008-08-05 | Knowmtech, Llc | Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream |
US20100065820A1 (en) * | 2005-02-14 | 2010-03-18 | Atomate Corporation | Nanotube Device Having Nanotubes with Multiple Characteristics |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
KR100688542B1 (ko) | 2005-03-28 | 2007-03-02 | 삼성전자주식회사 | 수직형 나노튜브 반도체소자 및 그 제조방법 |
TWI420628B (zh) * | 2005-03-28 | 2013-12-21 | 奈米碳管結合墊結構及其方法 | |
WO2007084163A2 (en) * | 2005-04-06 | 2007-07-26 | President And Fellows Of Harvard College | Molecular characterization with carbon nanotube control |
US7989349B2 (en) * | 2005-04-15 | 2011-08-02 | Micron Technology, Inc. | Methods of manufacturing nanotubes having controlled characteristics |
CN101484997B (zh) * | 2005-05-09 | 2011-05-18 | 南泰若股份有限公司 | 使用具有可重新编程电阻的纳米管制品的存储器阵列 |
US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
CA2609042A1 (en) * | 2005-06-02 | 2006-12-07 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
US7278324B2 (en) * | 2005-06-15 | 2007-10-09 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon nanotube-based sensor and method for detection of crack growth in a structure |
US7420396B2 (en) * | 2005-06-17 | 2008-09-02 | Knowmtech, Llc | Universal logic gate utilizing nanotechnology |
US7599895B2 (en) | 2005-07-07 | 2009-10-06 | Knowm Tech, Llc | Methodology for the configuration and repair of unreliable switching elements |
US7838943B2 (en) * | 2005-07-25 | 2010-11-23 | International Business Machines Corporation | Shared gate for conventional planar device and horizontal CNT |
US7352607B2 (en) * | 2005-07-26 | 2008-04-01 | International Business Machines Corporation | Non-volatile switching and memory devices using vertical nanotubes |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
EP1755137A1 (en) * | 2005-08-18 | 2007-02-21 | University of Teheran | A method of forming a carbon nanotube emitter, carbon nanotube emitter with applications in nano-printing and use thereof |
US7491962B2 (en) | 2005-08-30 | 2009-02-17 | Micron Technology, Inc. | Resistance variable memory device with nanoparticle electrode and method of fabrication |
KR100682952B1 (ko) * | 2005-08-31 | 2007-02-15 | 삼성전자주식회사 | 나노탄성 메모리 소자 및 그 제조 방법 |
JP2009513368A (ja) * | 2005-09-23 | 2009-04-02 | ナノシス・インコーポレイテッド | ナノ構造体のドーピング方法 |
DE102005046427B4 (de) * | 2005-09-28 | 2010-09-23 | Infineon Technologies Ag | Leistungstransistor mit parallelgeschalteten Nanodrähten |
FR2891664B1 (fr) * | 2005-09-30 | 2007-12-21 | Commissariat Energie Atomique | Transistor mos vertical et procede de fabrication |
JP5037804B2 (ja) * | 2005-09-30 | 2012-10-03 | 富士通株式会社 | 垂直配向カーボンナノチューブを用いた電子デバイス |
FR2895572B1 (fr) * | 2005-12-23 | 2008-02-15 | Commissariat Energie Atomique | Materiau a base de nanotubes de carbone et de silicium utilisable dans des electrodes negatives pour accumulateur au lithium |
EP1804286A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Elongate nanostructure semiconductor device |
CA2624778A1 (en) * | 2005-12-29 | 2007-11-22 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
US8394664B2 (en) * | 2006-02-02 | 2013-03-12 | William Marsh Rice University | Electrical device fabrication from nanotube formations |
US20070183189A1 (en) * | 2006-02-08 | 2007-08-09 | Thomas Nirschl | Memory having nanotube transistor access device |
US8785058B2 (en) * | 2006-04-07 | 2014-07-22 | New Jersey Institute Of Technology | Integrated biofuel cell with aligned nanotube electrodes and method of use thereof |
US8679630B2 (en) * | 2006-05-17 | 2014-03-25 | Purdue Research Foundation | Vertical carbon nanotube device in nanoporous templates |
US20080002755A1 (en) * | 2006-06-29 | 2008-01-03 | Raravikar Nachiket R | Integrated microelectronic package temperature sensor |
US8101984B2 (en) * | 2006-07-07 | 2012-01-24 | The Regents Of The University Of California | Spin injector |
US20080135892A1 (en) * | 2006-07-25 | 2008-06-12 | Paul Finnie | Carbon nanotube field effect transistor and method of making thereof |
KR100749751B1 (ko) | 2006-08-02 | 2007-08-17 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
KR100806129B1 (ko) | 2006-08-02 | 2008-02-22 | 삼성전자주식회사 | 탄소 나노 튜브의 형성 방법 |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
US8643087B2 (en) * | 2006-09-20 | 2014-02-04 | Micron Technology, Inc. | Reduced leakage memory cells |
EP2082419A4 (en) * | 2006-11-07 | 2014-06-11 | SYSTEMS AND METHODS FOR NANOWIL GROWTH | |
US7786024B2 (en) * | 2006-11-29 | 2010-08-31 | Nanosys, Inc. | Selective processing of semiconductor nanowires by polarized visible radiation |
WO2008069485A1 (en) * | 2006-12-05 | 2008-06-12 | Electronics And Telecommunications Research Institute | The electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof |
KR100820174B1 (ko) | 2006-12-05 | 2008-04-08 | 한국전자통신연구원 | 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법 |
US8168495B1 (en) | 2006-12-29 | 2012-05-01 | Etamota Corporation | Carbon nanotube high frequency transistor technology |
US9806273B2 (en) * | 2007-01-03 | 2017-10-31 | The United States Of America As Represented By The Secretary Of The Army | Field effect transistor array using single wall carbon nano-tubes |
DE102007001130B4 (de) * | 2007-01-04 | 2014-07-03 | Qimonda Ag | Verfahren zum Herstellen einer Durchkontaktierung in einer Schicht und Anordnung mit einer Schicht mit Durchkontaktierung |
US7930257B2 (en) * | 2007-01-05 | 2011-04-19 | Knowm Tech, Llc | Hierarchical temporal memory utilizing nanotechnology |
US9487877B2 (en) * | 2007-02-01 | 2016-11-08 | Purdue Research Foundation | Contact metallization of carbon nanotubes |
US7858918B2 (en) * | 2007-02-05 | 2010-12-28 | Ludwig Lester F | Molecular transistor circuits compatible with carbon nanotube sensors and transducers |
US7838809B2 (en) * | 2007-02-17 | 2010-11-23 | Ludwig Lester F | Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials |
US7839028B2 (en) | 2007-04-03 | 2010-11-23 | CJP IP Holding, Ltd. | Nanoelectromechanical systems and methods for making the same |
US20080272361A1 (en) * | 2007-05-02 | 2008-11-06 | Atomate Corporation | High Density Nanotube Devices |
US8546027B2 (en) * | 2007-06-20 | 2013-10-01 | New Jersey Institute Of Technology | System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane |
US7736979B2 (en) * | 2007-06-20 | 2010-06-15 | New Jersey Institute Of Technology | Method of forming nanotube vertical field effect transistor |
US7964143B2 (en) | 2007-06-20 | 2011-06-21 | New Jersey Institute Of Technology | Nanotube device and method of fabrication |
FR2920252A1 (fr) * | 2007-08-24 | 2009-02-27 | Commissariat Energie Atomique | Procede de realisation d'un transistor comportant une connexion electrique a base de nanotubes ou de nanofils. |
EP2205522B1 (en) * | 2007-10-02 | 2019-03-13 | President and Fellows of Harvard College | Carbon nanotube synthesis for nanopore devices |
US7960713B2 (en) * | 2007-12-31 | 2011-06-14 | Etamota Corporation | Edge-contacted vertical carbon nanotube transistor |
KR101410930B1 (ko) * | 2008-01-17 | 2014-06-23 | 삼성전자주식회사 | 탄소나노튜브 상의 금속 산화막 형성방법 및 이를 이용한탄소나노튜브 트랜지스터 제조방법 |
US20090194424A1 (en) * | 2008-02-01 | 2009-08-06 | Franklin Aaron D | Contact metallization of carbon nanotubes |
KR101002336B1 (ko) * | 2008-02-04 | 2010-12-20 | 엘지디스플레이 주식회사 | 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법 |
DE102008015118A1 (de) * | 2008-03-10 | 2009-09-24 | Ohnesorge, Frank, Dr. | Raumtemperatur-Quantendraht-(array)-Feldeffekt-(Leistungs-) Transistor "QFET", insbesondere magnetisch "MQFET", aber auch elektrisch oder optisch gesteuert |
US8912654B2 (en) * | 2008-04-11 | 2014-12-16 | Qimonda Ag | Semiconductor chip with integrated via |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
DE102009031481A1 (de) | 2008-07-03 | 2010-02-11 | Ohnesorge, Frank, Dr. | Konzept für optische (Fernfeld-/Fresnel-Regime aber auch Nahfeld-) Mikroskopie/Spektroskopie unterhalb/jenseits des Beugungslimits - Anwendungen für optisches (aber auch elektronisches) schnelles Auslesen von ultrakleinen Speicherzellen in Form von lumineszierenden Quantentrögen - sowie in der Biologie/Kristallographie |
KR101018294B1 (ko) * | 2008-09-19 | 2011-03-04 | 한국과학기술원 | 수직형 트랜지스터 소자 |
US9494615B2 (en) * | 2008-11-24 | 2016-11-15 | Massachusetts Institute Of Technology | Method of making and assembling capsulated nanostructures |
KR101539669B1 (ko) * | 2008-12-16 | 2015-07-27 | 삼성전자주식회사 | 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법 |
US8715981B2 (en) * | 2009-01-27 | 2014-05-06 | Purdue Research Foundation | Electrochemical biosensor |
US8872154B2 (en) * | 2009-04-06 | 2014-10-28 | Purdue Research Foundation | Field effect transistor fabrication from carbon nanotubes |
DK2433475T3 (da) | 2009-05-19 | 2021-05-10 | Oned Mat Inc | Nanostrukturerede materialer til batterianvendelser |
DE102009041642A1 (de) | 2009-09-17 | 2011-03-31 | Ohnesorge, Frank, Dr. | Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle |
DE102010007676A1 (de) | 2010-02-10 | 2011-08-11 | Ohnesorge, Frank, Dr., 91054 | Konzept für lateral aufgelöste Fourier Transformations Infrarot Spektroskopie unterhalb/jenseits des Beugungslimits - Anwendungen für optisches (aber auch elektronisches) schnelles Auslesen von ultrakleinen Speicherzellen in Form von lumineszierenden Quantentrögen - sowie in der Biologie/Kristallographie |
CN102214577B (zh) * | 2010-04-09 | 2012-12-26 | 中国科学院微电子研究所 | 一种制作纳米开关的方法 |
US8476637B2 (en) | 2010-06-08 | 2013-07-02 | Sundiode Inc. | Nanostructure optoelectronic device having sidewall electrical contact |
US8431817B2 (en) | 2010-06-08 | 2013-04-30 | Sundiode Inc. | Multi-junction solar cell having sidewall bi-layer electrical interconnect |
US8659037B2 (en) | 2010-06-08 | 2014-02-25 | Sundiode Inc. | Nanostructure optoelectronic device with independently controllable junctions |
FR2962595B1 (fr) | 2010-07-06 | 2015-08-07 | Commissariat Energie Atomique | Dispositif microélectronique a niveaux métalliques d'interconnexion connectes par des vias programmables |
KR101008026B1 (ko) * | 2010-07-12 | 2011-01-14 | 삼성전자주식회사 | 파묻힌 게이트 구조를 갖는 탄소나노튜브 트랜지스터 |
US8288759B2 (en) * | 2010-08-04 | 2012-10-16 | Zhihong Chen | Vertical stacking of carbon nanotube arrays for current enhancement and control |
TWI476948B (zh) * | 2011-01-27 | 2015-03-11 | Hon Hai Prec Ind Co Ltd | 外延結構及其製備方法 |
US8633055B2 (en) | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
US9024367B2 (en) * | 2012-02-24 | 2015-05-05 | The Regents Of The University Of California | Field-effect P-N junction |
EP2892859A2 (en) | 2012-09-04 | 2015-07-15 | OCV Intellectual Capital, LLC | Dispersion of carbon enhanced reinforcement fibers in aqueous or non-aqueous media |
US9406888B2 (en) * | 2013-08-07 | 2016-08-02 | GlobalFoundries, Inc. | Carbon nanotube device |
EP2947045B1 (en) | 2014-05-19 | 2019-08-28 | IMEC vzw | Low defect-density vertical nanowire semiconductor structures and method for making such structures |
US9515179B2 (en) | 2015-04-20 | 2016-12-06 | Semiconductor Components Industries, Llc | Electronic devices including a III-V transistor having a homostructure and a process of forming the same |
US9472773B1 (en) | 2015-12-09 | 2016-10-18 | International Business Machines Corporation | Stacked carbon nanotube multiple threshold device |
US10340459B2 (en) * | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
RU175418U1 (ru) * | 2016-12-12 | 2017-12-04 | Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (ФГКУ "В/ч" 68240) | Полевой транзистор на углеродной пленке с вертикальным каналом проводимости |
CN108269802B (zh) * | 2017-01-04 | 2020-11-06 | 上海新昇半导体科技有限公司 | 一种碳纳米管束场效应晶体管阵列及其制造方法 |
KR102324232B1 (ko) | 2020-06-03 | 2021-11-08 | 연세대학교 산학협력단 | 게이트-올-어라운드 구조의 수직형 트랜지스터 및 그 제조 방법 |
RU204091U1 (ru) * | 2020-12-25 | 2021-05-06 | Общество с ограниченной ответственностью "Сенсор Микрон" | Полевой транзистор с вертикальным каналом для СВЧ - техники |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6038060A (en) * | 1997-01-16 | 2000-03-14 | Crowley; Robert Joseph | Optical antenna array for harmonic generation, mixing and signal amplification |
US6034389A (en) * | 1997-01-22 | 2000-03-07 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
WO1998048456A1 (en) * | 1997-04-24 | 1998-10-29 | Massachusetts Institute Of Technology | Nanowire arrays |
US6069380A (en) * | 1997-07-25 | 2000-05-30 | Regents Of The University Of Minnesota | Single-electron floating-gate MOS memory |
KR100277881B1 (ko) * | 1998-06-16 | 2001-02-01 | 김영환 | 트랜지스터 |
US6472705B1 (en) * | 1998-11-18 | 2002-10-29 | International Business Machines Corporation | Molecular memory & logic |
US6459095B1 (en) * | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6062931A (en) * | 1999-09-01 | 2000-05-16 | Industrial Technology Research Institute | Carbon nanotube emitter with triode structure |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
US6444256B1 (en) * | 1999-11-17 | 2002-09-03 | The Regents Of The University Of California | Formation of nanometer-size wires using infiltration into latent nuclear tracks |
US7335603B2 (en) * | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
JP5013650B2 (ja) * | 2000-08-22 | 2012-08-29 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ドープされた細長い半導体、そのような半導体の成長、そのような半導体を含んだデバイス、およびそのようなデバイスの製造 |
US6525453B2 (en) * | 2001-05-02 | 2003-02-25 | Huang Chung Cheng | Field emitting display |
JP2003018544A (ja) * | 2001-06-29 | 2003-01-17 | Nec Corp | ディジタル放送用記録装置 |
-
2000
- 2000-06-27 KR KR1020000035703A patent/KR100360476B1/ko active IP Right Grant
-
2001
- 2001-06-22 CN CNB01122021XA patent/CN1193430C/zh not_active Expired - Lifetime
- 2001-06-26 JP JP2001192414A patent/JP4338910B2/ja not_active Expired - Lifetime
- 2001-06-27 US US09/891,240 patent/US6566704B2/en not_active Expired - Lifetime
-
2003
- 2003-03-13 US US10/386,536 patent/US6833567B2/en not_active Expired - Lifetime
- 2003-03-14 US US10/387,561 patent/US6855603B2/en not_active Expired - Lifetime
- 2003-03-17 US US10/388,450 patent/US6815294B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20020001260A (ko) | 2002-01-09 |
JP2002110977A (ja) | 2002-04-12 |
KR100360476B1 (ko) | 2002-11-08 |
US20030227015A1 (en) | 2003-12-11 |
JP4338910B2 (ja) | 2009-10-07 |
US20030230782A1 (en) | 2003-12-18 |
US6815294B2 (en) | 2004-11-09 |
US20020001905A1 (en) | 2002-01-03 |
US6855603B2 (en) | 2005-02-15 |
CN1330412A (zh) | 2002-01-09 |
US20030230760A1 (en) | 2003-12-18 |
US6833567B2 (en) | 2004-12-21 |
US6566704B2 (en) | 2003-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1193430C (zh) | 使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 | |
JP5487421B2 (ja) | トランジスタの構造及びその製造方法 | |
CN1317768C (zh) | 利用垂直纳米管的非易失性存储装置 | |
EP1485958B1 (en) | Self-aligned nanotube field effect transistor and method of fabricating same | |
US7659165B2 (en) | Method of fabricating a field effect transistor | |
US8664657B2 (en) | Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure | |
US6648711B1 (en) | Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter | |
CN1828894A (zh) | 混合半导体结构及其制造方法 | |
CN1755942A (zh) | N型碳纳米管场效应晶体管及其制备方法 | |
US7799633B2 (en) | Semiconductor device and method of manufacturing the same | |
US7176147B2 (en) | Combination insulator and organic semiconductor formed from self-assembling block co-polymers | |
CN1992198A (zh) | 生长碳纳米管的方法及形成半导体器件的导电线的方法 | |
KR20020001259A (ko) | 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법 | |
KR100858930B1 (ko) | 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터 | |
CN1251247C (zh) | 一种提高纳米材料电性能的方法 | |
KR101010115B1 (ko) | 반도체 소자 및 그 형성 방법 | |
KR100886723B1 (ko) | 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터 | |
KR100376201B1 (ko) | 탄소 나노튜브막을 구비하는 능동행렬형 전계방출 표시소자 및 그의 제조방법 | |
Luo et al. | Field emission characteristics of BN nanofilms grown on GaN substrates | |
CN1236496C (zh) | 利用碳纳米管制作的逻辑“非”门器件 | |
CN115224191A (zh) | 一种铁电超晶格多值存储器件及其制作方法 | |
Krauser et al. | Tetrahedral Amorphous Carbon: Conducting Ion Tracks | |
KR100858929B1 (ko) | 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050316 |