CN115524773A - 特别是用于表面安装结构元件(smd)的可反射的复合材料和含这种复合材料的发光装置 - Google Patents
特别是用于表面安装结构元件(smd)的可反射的复合材料和含这种复合材料的发光装置 Download PDFInfo
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- CN115524773A CN115524773A CN202211267979.XA CN202211267979A CN115524773A CN 115524773 A CN115524773 A CN 115524773A CN 202211267979 A CN202211267979 A CN 202211267979A CN 115524773 A CN115524773 A CN 115524773A
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Abstract
本发明涉及特别是用于表面安装结构元件(SMD)的可反射的复合材料和含这种复合材料的发光装置。可反射的复合材料包括由铝制成的载体、在载体上在一个侧面上的由氧化铝组成的中间层和在中间层上施加的增强反射的光学作用的多层系统。为了提供具有高反射率的复合材料,复合材料在采用表面安装技术的情况下具有更好的电接触能力,提出,由氧化铝组成的中间层的厚度在5nm至200nm的范围内,并在载体的与增强反射的光学作用的多层系统相反的侧面的表面上施加有金属层或金属合金层,其在25℃下具有的比电阻最大为1.2*10‑1Ωmm2/m,其中,所述表面施加的层的厚度在10nm至5.0μm的范围内。
Description
本申请是申请号为2018800352011(国际申请号为:PCT/EP2018/065516),申请日为2018年6月12日,发明名称为“特别是用于表面安装结构元件(SMD)的可反射的复合材料和含这种复合材料的发光装置”的发明专利申请的分案申请。
技术领域
本发明涉及一种可反射的复合材料,该复合材料包括由铝制成的载体、在该载体上的由氧化铝组成的中间层和在该中间层上施加的增强反射的光学作用的多层系统。“由铝制成的载体”还包括铝合金。
此外,本发明还涉及具有这种可反射的复合材料的发光装置。
背景技术
例如从WO 00/29784 A1中已知开头所述类型的复合材料。该申请的重点是形成位于光学作用系统表面上的保护层。也称为功能涂层的反射增强的光学有效的多层系统包含反射层,例如由铝,银,铜,金,铬,镍或它们的合金构成的层。在载体和功能涂层之间可以布置至少一个预处理层作为中间层,在载体由铝构成的情况下,该中间层例如可以是通过载体的阳极氧化产生的层。对此所实施的通常已知的是由光亮的材料制备带,例如由基于铝的纯铝,其纯度为99.8%以上,例如99.9%,或由AlMg合金制造等,以及同样地也生成具有漫反射或定向光反射的轧制表面。还已知为了增加定向反向而使这种带的表面以化学或电解方式抛光,然后通过阳极氧化产生例如1.5μm层厚的氧化铝保护层。替代地,自然地在铝上形成的氧化物层仅达到约0.005μm的厚度。
DE 103 40 005 A1描述了一种用于发射白光的发光装置,该发光装置包括未具体描述的电绝缘的基板,该电绝缘基板具有两个连接电极,该两个连接电极设置在基板的上表面和下表面上。已知的装置包括被放置在基板上并且被实施为芯片的发光二极管(LED)。该发光二极管的阴极通过粘合剂与其中一个电极连接,并且阳极通过键合线与另一电极连接。LED和基板的上表面被透明树脂覆盖。
在DE 103 40 005 A1中实施的安装方法的特征是LED芯片的所谓的表面安装,其也被称为“Die(裸片)”(立方体或小板的英文)。该安装技术在英语中称为Surface-mounting technology“SMT”。在该上下文中还使用缩写“SMD”(英语:Surface-mounteddevice)描述表面安装的结构元件,其与带有“有线的结构元件”的常规穿插安装(ThroughHole Technology,“THT”)的结构元件不同,其没有导线连接,而是借助于尤其是可焊接的连接面(但是在此在DE 103 40 005 A1中使用粘合剂)作为所谓的平面组件直接安装在电路板上。
对于这种连接电极结构,英文术语“lead frame(引线框架)”也是常见的,例如示例性地可参见US 6,407,411 B1。在其中应该提到的是,在SMD-LED的领域中,当今通常使用镀银铜作为“引线框架”的材料,但不利的是它对硫化氢的抵抗力低,并且反射率仅在93%左右的量级。
DE 103 40 005 A1中描述的安装方法还涉及所谓的“COB技术”(英语:Chip-on-Board-Technology)的使用,其也被称为裸芯片安装。这是一种将未封装的(ungehaust)半导体芯片直接安装在电路板上以生产电子组件的技术。现在人们将术语“COB”用于包括裸露半导体的所有组件,而最初被理解为仅根据所谓的芯片和导线技术制成的组件。根据该申请,基于进一步的理解,这在内容上包括如DE 103 40 005 A1中针对LED芯片内容所提供的芯片和导线技术。
LED装置的显著优势是其高发光效率ηv(英语:luminous efficacy)。发光效率应理解为是指光源发出的光通量Фv与其吸收的功率P的商。发光效率的SI单位是流明每瓦(lm/W)。对于给定的灯功率消耗,发光效率的值越大,眼睛可以使用的光通量流就越大。灯的发光效率ηv由两个因素组成:灯的辐射效率ηe和发出的辐射的光度辐射当量K
ηv=ηe*K
尽管传统白炽灯的发光效率为10至30lm/瓦,但有利地它的发光效率却是LED灯的两倍以上,即60至100lm/瓦。
在EP 2 138 761 A1中指出,可使用由铝制成的、特别是涂层的反射器来获得相对高的照明强度或发光效率ηv,即高效率。用作反射器的高反射性载体的全反射率也导致高发光效率。根据本申请,术语“高反射性”是基于与上述EP 2 138 761 A1中所阐述内容相同的理解。即,在下文中,“高反射性”材料是指根据DIN 5036,第3部分(版本11/79)具有至少85%,优选至少90%,特别优选至少95%的总反射率。
如前所述,作为用于具有高的总反射率的反射器的载体材料,使用最低纯度为99.8%的很大程度轧制的铝,在其上施加中间层作为位于其上的PVD层的基底并用作化学保护层。该保护的中间层优选在湿化学阳极氧化工艺中形成,由此实现表面具有足够低的粗糙度和足够的硬度并且形成无缺陷的,其中可以在工艺链的最后阶段中通过热收缩尽量封闭氧化铝层的可能存在的孔。通过改变纯度和/或粗糙度,可以影响全反射的水平,而漫反射的程度可以受到铝载体的轧制结构的有针对性的变化的影响。如果将尤其是带状的铝载体材料放入用于阳极氧化或湿化学阳极氧化的浴中以产生中间层,则不仅在其上侧形成氧化铝中间层而且在其下侧上形成了另一种具有基本相同构造的氧化铝层。
随后施加在中间层上的光学作用的多层系统可以例如由至少三层组成,其中上层是介电层和/或氧化层,最下层是金属层,其形成反射层。在此,金属层例如可以是高反射的纯银层,其沉积在阳极氧化层上。它是光学致密的并且在可见光范围内具有极高的全反射率。开头提到的这种类型的复合材料以名称为-Silver的表面调质的铝带广泛地用于照明技术,日光系统和装饰应用。
在DE 10 2015 114 095 A1和WO 2017/032809 A1中描述了开头提到类型的具有银反射层的其他已知的复合材料。由于它们有利的高的总反射率和出色的长期稳定性,因此希望将其与其他此类复合材料在上述表面安装技术和芯片板载技术中用作载体材料,例如作为引线框架结构,用于表面安装器件(SMD),特别是用于LED半导体芯片。因此,在DE 102015 114 095 A1和WO 2017/032809 A1中,将例如芯片形式的LED光源放置在该处所述的复合材料的表面上作为优选的应用。然而已经发现,在上述技术的背景下,特别是当使用芯片和线技术时,已知的复合材料会导致SMD的电接触的问题。
发明内容
本发明的目的是,提供开头所述类型的复合材料,其具有高反射性以及优选较高的长期稳定性,即长期的光的整体反射率损失较小,该复合材料在采用表面安装的情况下、尤其在使用芯片和线技术的情况下具有改进的电连接能力。
根据本发明,该目的通过以下方式实现,由氧化铝组成的中间层具有的厚度在5nm至200nm的范围内并且在载体的与加强反射的光学作用的多层系统相反的一侧上在表面施加金属层或金属合金层,其在25℃下具有最大为1.2*10-1Ωmm2/m的比电阻,其中,在表面施加的层的厚度在10nm至5.0μm的范围内。
根据本发明有利地,在所谓的线接合中一方面可容易地将金属线焊接、尤其将金线以超声波焊接在根据本发明的复合材料的前侧或上侧以在复合材料的上表面和通过表面安装施加在复合材料上的电子构件之间建立连接,且另一方面显示出,在根据本发明的复合材料的后侧或下侧上的接触电阻很小可忽略。由此该侧可没有问题地钎焊在印刷电路板上(英语:Printed Circuit Board-PCB)或借助类似的材料配合地作用的连接方法例如在使用导电漆或粘合剂的情况下施加。
对在表面上施加的金属层或金属合金层的材料的选择和厚度可有利地在以下不同方面彼此优化地协调,例如比电阻的值、耐热性、尤其在钎焊时的耐热性、焊料兼容性、可用性、价格等。
优选地,在这些观点下在表面上施加的金属层或金属合金层对于铜层厚度可在0.1μm至5.0μm范围内或对于银层厚度可在10nm至500nm范围内。
根据本发明的发光装置包括根据本发明的可反射的复合材料,其形成用于电子结构元件的框架支承结构(“引线框架(lead frame)”),例如构造成裸芯片(裸片(Die))的发光二极管,其中,电子结构元件在上侧置于并且被固定在框架支承结构上以及借助单独的金属线与框架支承结构电接触,并且其中,电子结构元件(作为SMD)和框架支承结构(“引线框架(lead frame)”)组成的复合体在下侧以导电的方式与印刷电路板(PCB)材料配合地连接。
通过根据本发明的复合材料代替普通的、由镀银的铜制成的框架结构在此、尤其在表面上施加的层上没有银时引起提高的耐腐蚀性、尤其相对于硫化氢具有更高的耐腐蚀性,其中在任何情况下同时提高了光输出,尤其可远远超过100lm/W的值。
本发明的其他有利的实施方式包括在从属权利要求中以及在下面的详细描述中。
附图说明
根据通过附图示出的实施例详细阐述本发明。其中,
图1示出了根据本发明的复合材料的实施方式的放大的原理性剖视图,其中,包含在其中的层厚纯粹是示意性的而并未按尺寸比例示出,
图2示出了根据本发明的发光装置的实施方式的部分区域的视图,
图3示出了用于根据本发明的发光装置的由根据本发明的复合材料形成的框架支承结构的实施方式的视图,以及
图4示出了根据本发明的发光装置的实施方式的横截面。
针对以下描述明确指出,本发明不限于示例性实施例,并且在此也不限于所描述的特征组合的全部或多个特征。而是,实施例的每个单独的局部特征也可以脱离于结合其描述的所有其他局部特征并且还与任何合适的其他特征组合而具有发明意义。
在图纸的不同附图中相同的部件始终设有相同的附图标记,从而其通常也仅相应描述一次。
具体实施方式
如首先由图1所示,根据本发明的具有由铝制成的载体1的可反射的复合材料V包括在载体1上的侧面A上存在的由氧化铝组成的中间层2和施加在中间层2上的加强反射的光学作用的多层系统3。载体1可具有卷材(Coil)的结构,其具有直至1600mm、优选1250mm的宽度以及约0.1至1.5mm、优选约0.2至0.8mm的厚度D1。因为在载体上的所有薄层、尤其是中间层2和光学作用的多层系统3的层相对小、可忽略,载体厚度D1的大小同时也代表根据本发明的复合材料V的总厚度DG。
载体1的铝可尤其具有高于99.0%的纯度,由此促进其导热性能。由此可避免产生热量峰值。但是例如载体1也可为带状的铝板Al98.3,即纯度为98.3%。也可使用铝合金,例如AlMg合金作为载体1,只要可以通过阳极氧化由其形成中间层2。
光学作用的多层系统3可示例性地如所述地由至少三个层构成,其中两个上层4、5是介电层和/或氧化层,位于下面的最下层6是金属的、例如由铝或银制成的层,其形成反射层6。
此外,在示出的情况下示出了可选存在的、用于保护的非金属的由诸如二氧化硅的低吸收性材料构成的覆盖层7。这种层结构由德国实用新型DE 2 98 12 559 U1得知,在本文中引用该实用新型全文。由此光学多层系统3的介电层和/或氧化层4、5例如分别具有的厚度D4、D5在30nm至200nm的范围内,其中厚度D4、D5分别优选地为待反射的电磁辐射的光谱范围的平均波长的四分之一,由此层4、5可用作提高反射的干涉层。保护层7的厚度D7可在0.5nm至20nm的范围内、优选在0.5nm至10nm的范围内。也可设置成,在光学多层系统3上施加氮化硅保护层被用作覆盖层7。
光学多层系统3连同覆盖层7以及有利地在下面还将描述的、尤其是构造成铜层的金属层或金属合金层9可以技术有利的方式在使用连续的真空带涂工艺的情况下被施加。尤其在此,层4、5、6、7、9可为溅射层,特别是通过反应性溅射产生的层,CVD或PECVD层,或者是通过蒸发、特别是通过电子轰击或由热源产生的层。
反射层6可以可选地经由未示出的、例如由铝、钛和/或铬氧化物构成的粘附剂层连接到中间层2上。此外,反射层6可以可选地在上侧和下侧嵌入未示出的例如由镍、镍合金或钯构成的阻挡层之间,以提高温度稳定性。
光学多层系统3的上部的介电层和/或氧化层4是比光学多层系统3的下部的介电层和/或氧化层5折射率更高的层,其中,上层4优选可由TiO2、Ta2O5、Nb2O5、MoO3和/或ZrO2构成且下层5优选地可由Al2O3和/或SiO2构成。
根据本发明设置成,由氧化铝组成的、尤其由阳极氧化的铝构成的中间层2的厚度D2在5nm至200nm的范围内,优选在10nm至100nm的范围内。如所述地,由此如在图2中所示根据本发明有利地在所谓的线接合中可在根据本发明的复合材料V的前侧或上侧A上焊接金属线D、尤其是超声波焊接金线,从而可轻松地在复合材料V的表面A和通过表面安装施加在复合材料V上的电子构件SMD之间实现电连接(焊点SP)。
在此优选地,中间层2的表面具有的算术平均粗糙度Ra在低于0.05μm的范围内、尤其低于0.01μm的范围内、特别优选低于0.005μm的范围内。这在存在前述高的光总反射率的情况下用于设定根据DIN5036确定的最小的漫射的光反射率。如果需要更高程度的光的漫反射度,则可以相应地增加粗糙度。
在载体1的与反射增强的光学作用的多层系统3相对的一侧B上具有任选地由氧化铝组成的另一层8,其例如可以在上侧A阳极氧化时由制造引起而同时出现。但是,如果需要,可以通过覆盖侧面B来避免其形成。同样,已知必要时用于去除这种层的方法。如果存在由氧化铝组成的另一层8,则其厚度D8应在与中间层2的厚度D2相同的范围内,即在5nm至200nm的范围内,优选在10nm至100nm的范围内。
根据本发明的另一特征在于,在载体1的与反射增强的光学作用的多层系统3相对的一侧B上在表面施加金属的或金属合金的层9,其在25℃下具有的比电阻最大为1.2*10-1Ωmm2/m,其中,施加在表面上的层9的厚度D9在10nm至5.0μm的范围内。
其尤其为铜层,铜层施加的厚度D9在0.1μm至5.0μm的范围内、优选在0.2μm至3.0μm的范围内、特别优选在0.5μm至1.5μm的范围内。
本发明的另一优选实施方式是,施加在表面的层9是厚度D9在10nm至500nm的范围内、尤其是厚度D9在50nm至250nm的范围内的银层。
施加在表面的金属或金属合金的层9的比电阻在25℃下可优选具有的最大值为2.7*10-2Ωmm2/m、特别优选最大值为1.8*10-2Ωmm2/m。
在此,关于不同材料的比电阻的值可参考下面的表格1,该表格基于文献中不同位置给出的值而总结。
表格1:在25℃下的比电阻ρ的值
分别具有不同组分的十种不同二元合金(Al/Cu、Al/Mg、Cu/Au、Cu/Ni、Cu/Pd、Cu/Zn、Au/Pd、Au/Ag、Fe/Ni、Ag/Pd)的比电阻ρ的概览例如来自科学文章“Electricalresistivity of ten selected binary alloys systems”,作者:Ho,C.Y.等,J.Phys.Chem.Ref.Data,第12卷第2期,1983,第183至322页。在确定根据本发明规定的层9中的特定化学组成部分时可参考这些值。
但是也可根据ASTM F390-11“Standard Test Method for Sheet Resistance ofThin Metallic Films With a Collinear Four-Probe-Array”直接测量。该标准也包含关于如何在考虑层几何结构、即其长度、宽度和厚度的情况下可将得到的单位为Ω或“Ω的平方”的面电阻(“薄膜电阻(Sheet Resistance)”)换算成比电阻的说明。
在由铝构成的载体1或可选存在的由铝构成的另一层8和铜层9之间可以优选的构造方式设有粘附剂层10,其例如由过渡金属,尤其是由钛、铬或镍构成,且其厚度D10优选在5nm至25nm的范围内,特别优选在10nm至20nm的范围内。
如所述地,这有利地使得,在根据本发明的复合材料V的后侧或下侧B上的接触电阻很小可忽略。由此可将该侧B焊接到印刷电路板PCB上或借助类似的、材料连接作用的连接方法来将该侧B施加到印刷电路板PCB上。起到材料连接作用的连接层在图1中以及图4中分别用附图标记L表示。为了焊接可有利地例如使用含锡的标准电焊、例如Sn96.5Ag3Cu0.5。
虽然相对薄的金属或金属合金的表面层9、尤其是铜层,但显示出,在根据本发明的复合材料V和焊料之间不会形成相对于层厚D9很厚的且脆的金属间的相,金属间的相由于热应力而会导致钎焊部位的机械的以及之后也导致电学的失效。由此达1000h的热时效处理仅形成小的100nm厚的金属间的相。也显示出,连接层L的钎焊连接有利地通过了典型性测试,这通过在连接的构件LF、COB之间的牵拉或剪切力在温度时效处理之后,例如在120℃且1000h的情况下仅降低少于2倍。
在施加在表面的金属或金属合金的层9上、尤其是铜层上可选地有未示出的钝化层。钝化层可以优选由Ag、Ni、Pd和/或Au(Ag/Ni/Pd/Au)构成且具有的典型厚度在10nm至500nm的范围内、优选在50nm至250nm的范围内。这种层由于贵金属表面可被焊料更好地润湿,还促进了成品SMD组件与PCB的可焊接性。
根据本发明的发光装置LV,参见图2和图4,包括根据本发明的可反射的复合材料V,复合材料可形成用于电子结构元件SMD的框架支承结构LF(“引线框架(lead frame)”),例如构造成裸芯片DIE的发光二极管。这种框架支承结构LF在图3中示出。其在示出的形式中在俯视图中具有H的形状,其中,其在称为指部F的轨道之间的横梁Q不是直角的,而是如图所示地,通常倾斜延伸。这种框架支承结构LF以技术有利的方式例如可制成冲压件或通过激光切割制成。根据需要也可另外地构造成弯件(Biegeteil),因为复合材料V可在没有质量损失的情况下轻松弯曲。
在此可首先将多个框架支承结构LF组合成一个构造成带状电路板的框架装置,在该框架装置中框架支承结构LF经由连接片结合在场中即结合成横排和竖列元件。可从框架装置中轻松除去、例如切除或冲压出框架支承结构LF,从而可以有利地轻松地尤其是自动化地批量生产根据本发明的发光装置LV。框架支承结构LF在此可在上侧已经设有电子芯片SMD。
在根据本发明的发光装置LV中,电子结构元件SMD/DIE位于上侧,即位于框架支撑结构LF上的侧面A上,并且通过至少一根单独的金属线D与框架支撑结构LF接触。除了LED芯片(附图标记:DIE)以外,在图2中还在右下角示出了齐纳二极管Z,其作为另一个表面安装的电子构件SMD。电子结构元件SMD或在示出的情况下所示的两个电子结构元件SMD(DIE和Z)和框架支承结构LF的复合体在下侧(侧B)与印刷电路板PCB导电地材料适配地连接。
不同于示出的实施例,也可使具有其他层的加强反射的其他系统3位于载体1上。对此尤其提及DE 10 2015 114 095 A1的具有加强反射的银层的系统,只要其根据本发明构造即可。而在WO2017/032809A1中描述的系统在中间层2中必须有直至5μm厚的形成有机层的漆,根据本发明应避免这种情况。根据本申请,表述“由氧化铝组成的中间层2”优选具有“唯一地由...组成”的意义,被认为是排他的,但是根据该申请,如有必要不能完全排除中间层2中的部分层的存在。然而,对此在任何情况下,整个中间层2的厚度D2都应当在5nm至200nm的范围内。
尽管光学多层系统3不只是可以具有上述层4、5、6,但是根据本发明不能设置成,在其上施加有机或有机硅的漆层作为覆盖层7,例如基于溶胶-凝胶层,如在现有技术中所描述的。
技术人员可以在权利要求的范围内提供本发明的其他的适宜的、但是没有脱离本发明的实施方式。因此例如在图4中根据本发明的发光装置LV的表面浇铸透明的物质M,例如浇铸环氧树脂。可替代地或额外地,也可在构造成LED芯片DIE的电子构件SMD上设置光学透镜系统。
如果提及银层、尤其作为反射层6,则这包括这种层可包含在0.001质量百分比至5.0质量百分比范围内、尤其在0.5质量百分比至3.0质量百分比范围内的合金元素。合金元素例如可为稀土金属,例如钕。这种元素例如可迁移到银的晶界和/或积聚在银层的表面上,使得它们在那里更容易氧化成贵的银,并在银晶粒上形成微观上薄的保护层。合金元素的作用可通过额外添加钯、铂、金和/或铜再次被提高。也由此引起扩散抑制以及抵消银微晶的聚结,特别是在较高的温度下,例如它们可能在工作状态下发生。有利地,由此导致反射层的老化的减慢,即反射率随时间和/或温度下降的延迟。
也可以将钯作为主要合金元素添加到银中,质量比例优选占合金重量的0.5质量百分比至3.0质量百分比,另外还可以较小或至多相同的比例存在元素铝,金,铂,铜,钽,铬,钛,镍,钴或硅作为第三合金成分。
也可以用钼将银层合金化,但是以相对较高的比例,特别是至多70质量百分比,优选在5质量百分比至30质量百分比的范围内。这也引起扩散抑制以及导致银更好的粘附。
也可以提供铟,钛和/或锡作为银的合金元素。就此方面例如,似乎合适的合金优选地包含在0.5质量百分比至3.0质量百分比的范围内的铟和/或锡和/或锑和/或铋,其余为银。
在EP 3 196 334 A1中还描述了一种用于在溅射工艺中产生银合金层的合适靶材。
本发明不限于独立权利要求中限定的特征组合,而是也可通过所有公开单个特征的每个任意的其他特定特征组合来限定。这意味着,原则上实际上独立权利要求1中的每个单个特征都可取消或通过本申请其他部分公开的至少一个单个特征来替代。就此而言权利要求1仅理解为本发明的第一表述方案。
附图标记列表
1 V的载体
2 在1上的V的中间层(侧面A)
3 在2上的V的光学作用的多层系统(侧面A)
4、5 3的上层(侧面A)
6 3的最下层,反射层(侧面A)
7 在3上方的V的覆盖层(侧面A)
8 在1上的V的Al2O3层(侧面B)
9 金属层或合金层(侧面B)
A 1的上侧
B 1的下侧
D 金属线
D1 1的厚度
D2 2的厚度
D3 3的厚度
D4 4的厚度
D5 5的厚度
D6 6的厚度
D7 7的厚度
D8 8的厚度
D9 9的厚度
DG V的总厚度
DIE 发光二极管,SMD的裸芯片实施方式(图2、4)
F LF的H形指部(图2、3)
L 在V和PCB之间的连接层
LF 框架支承结构(引线框架(lead frame))
LV 具有V的发光装置
M LV的透明物质(图4)
PCB 印刷电路板
Q LF的H形的横梁(图3)
SMD 电子结构元件(表面安装器件)
SP 焊点(图2)
V 复合材料
Z 齐纳二极管,SMD的实施方式(图2)
Claims (21)
1.一种可反射的复合材料(V),所述复合材料具有宽度最多达1600mm的卷材的构造,所述复合材料包括由铝制成的具有0.1至1.5mm的厚度(D1)的载体(1)、在所述载体(1)上在一个侧面(A)上的由氧化铝组成的中间层(2)和施加在所述中间层(2)上的增强反射的光学作用的多层系统(3),其中,所述由氧化铝组成的中间层(2)的厚度(D2)在5nm至200nm的范围内,并且在所述载体(1)的与所述增强反射的光学作用的多层系统(3)相反的侧面(B)的表面上施加有金属层或金属合金层(9),所述金属或金属合金在25℃下具有的比电阻最大为1.2*10-1Ωmm2/m,其中,表面上施加的层(9)的厚度(D9)在10nm至5.0μm的范围内。
2.根据权利要求1所述的复合材料(V),其特征在于,在所述载体(1)的与增强反射的光学作用的多层系统(3)相反的侧面(B)的表面上施加的金属层或金属合金层(9)在25℃下具有的比电阻最大为2.7*10-2Ωmm2/m,优选最大为1.8*10-2Ωmm2/m。
3.根据权利要求1或2所述的复合材料(V),其特征在于,所述由氧化铝组成的中间层(2)的厚度(D2)在10至100nm的范围内。
4.根据权利要求1至3中任一项所述的复合材料(V),其特征在于,在由铝构成的载体(1)和在表面上施加的金属层或金属合金层(9)之间布置有由过渡金属、尤其由钛、铬或镍构成的粘附剂层(10)。
5.根据权利要求1至4中任一项所述的复合材料(V),其特征在于,在表面上施加的金属层或金属合金层(9)是铜层,尤其具有的厚度(D9)在0.1μm至5.0μm的范围内、优选在0.2μm至3.0μm的范围内、特别优选在0.5μm至1.5μm的范围内。
6.根据权利要求1至4中任一项所述的复合材料(V),其特征在于,在表面上施加的金属层或金属合金层(9)是银层,尤其具有的厚度(D9)在10nm至500nm范围内,优选在50nm至250nm范围内。
7.根据权利要求1至6中任一项所述的复合材料(V),其特征在于,在表面上施加的金属层或金属合金层(9)上沉积有钝化层,所述钝化层优选由Ag、Ni、Pd和/或Au构成并且厚度在10nm至500nm范围内,优选在50nm至250nm范围内。
8.根据权利要求1至7中任一项所述的复合材料(V),其特征在于,作为在表面上施加的金属层或金属合金层(9)和/或作为在其上的钝化层和/或作为增强反射的光学作用的多层系统(3)的反射层(6)的银层呈合金形式,并且作为合金元素包含一种或多种稀土元素和/或钯,铂,金,铜,铟,钛,锡和/或钼。
9.根据权利要求1至8中任一项所述的复合材料(V),其特征在于,布置在所述中间层(2)上的一个或多个层(4、5、6、7),尤其是光学多层系统(3)的一个或多个层以及在表面上施加的金属层或金属合金层(9)和/或钝化层是溅射层,尤其是通过反应性溅射产生的层,CVD层或PECVD层,或通过蒸发、特别是通过电子轰击或由热源产生的层。
10.根据权利要求1至9中任一项所述的复合材料(V),其特征在于,所述载体(1)的铝具有高于99.0%的纯度。
11.根据权利要求1至10中任一项所述的复合材料(V),其特征在于,所述载体(1)的厚度(D1)为0.2至0.8mm。
12.根据权利要求1至11中任一项所述的复合材料(V),其特征在于,根据DIN 5036,第三部分(版本11/79)确定的在光学多层系统(3)的侧面(A)上的总的光反射率大于97%并且优选至少为98%。
13.根据权利要求1至12中任一项所述的复合材料(V),其特征在于,作为卷材的构造具有1250mm的宽度。
14.发光装置(LV),包括根据权利要求1至13中任一项所述的复合材料(V),所述复合材料形成用于电子构件(SMD)的引线框架(LF),其中,所述电子构件(SMD)置于并且固定在所述引线框架(LF)的上侧(A)以及借助单独的线(D)与所述引线框架(LF)电接触,并且其中,由所述电子构件(SMD)和所述引线框架(LF)构成的复合体在下侧(B)与印刷电路板(PCB)导电地材料适配的连接。
15.根据权利要求14所述的发光装置(LV),其特征在于,所述引线框架(LF)与所述印刷电路板(PCB)经由含锡的钎焊层(L)连接。
16.根据权利要求15所述的发光装置(LV),其具有根据权利要求4和5所述的复合材料(V),
其特征在于,在所述复合材料(V)和所述钎焊层(L)之间不会形成金属间的相,由于热应力该金属间的相会导致钎焊部位的机械和电失效。
17.根据权利要求14或15所述的发光装置(LV),其特征在于,所述电子构件(SMD)是构造成芯片(DIE)的发光二极管(LED)。
18.根据权利要求1至13中任一项所述的可反射的复合材料(V)在生产根据权利要求14至17中任一项所述的发光装置(LV)中的用途,其中,与通孔组装技术相比,可表面安装的电子构件(SMD)放置并固定在复合材料(V)的上侧(A)上,所述复合材料(V)通过冲压或激光切割配置为引线框架(LF),可选地额外构造为弯件,并通过单独的线(D)与引线框架(LF)电接触,其中由所述电子构件(SMD)和所述引线框架(LF)制成的复合体在下侧(B)与印刷电路板(PCB)导电地材料适配的连接。
19.根据权利要求18所述的用途,
其特征在于,单独的线(D)为金线,借由其通过超声波焊接经由焊接点(SP),在复合材料(V)的上侧(A)和通过表面安装在所述复合材料(V)上而施加的电子构件(SMD)之间形成电连接。
20.根据权利要求18或19所述的用途,
其特征在于,所述引线框架(LF)在俯视图中具有H形,其中,其横梁(Q)在由指部(F)构造的轨道之间倾斜地延伸。
21.根据权利要求18至20中任一项所述的用途,其特征在于,首先将大量引线框架(LF)组合成带状电路板形式的框架装置,其中引线框架(LF)通过连接片即以横排元件和竖列元件的形式结合在场中,其中对于发光装置(LV)的自动化批量生产,从所述框架装置上,例如切除或冲压,来除去所述引线框架(LF)。
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