CN106328641B - 具有螺旋电感的可见光通信led及其制备方法 - Google Patents

具有螺旋电感的可见光通信led及其制备方法 Download PDF

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CN106328641B
CN106328641B CN201610886147.4A CN201610886147A CN106328641B CN 106328641 B CN106328641 B CN 106328641B CN 201610886147 A CN201610886147 A CN 201610886147A CN 106328641 B CN106328641 B CN 106328641B
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core particles
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meander line
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visible light
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CN106328641A (zh
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孙慧卿
杨晛
郭志友
黄涌
黄鸿勇
孙杰
黄晶
张柱定
刘洋
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South China Normal University
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Abstract

本发明公开一种具有螺旋电感线圈与圆形芯粒的可见光通信LED，包括蓝宝石衬底，所述蓝宝石衬底上焊有正极焊点和负极焊点，所述蓝宝石衬底上沉积了若干个发光LED芯粒，前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点，其特征在于，每个发光LED芯粒的外围都围绕着一个螺旋电感线圈，该螺旋电感线圈的一端引脚通过连接线与所相邻的发光LED芯粒的n极连接，另一端直接与其所围绕的发光LED芯粒的p极连接。

Description

具有螺旋电感的可见光通信LED及其制备方法
技术领域
本发明涉及可见光光通信技术领域，具体涉及一种具有螺旋电感的可见光通信LED及其制备方法。
背景技术
可见光是电磁波谱中人眼可以感知的部分，可见光谱没有精确的范围，一般情况下人眼睛可以感知电磁波波长400nm ~700nm，正常视力的人眼对波长约为555nm电磁波最为敏感，这种电磁波处于光学频谱的绿光区域。
可见光通信(visible light communication)技术是随着白光发光二极管(lightemitting diode，LED) 照明技术的发展而兴起的无线光通信技术。与传统的有线传输相比，可见光通信具有发射功率高、无电磁干扰、节约能源等优点，因此在世界范围内得到了广泛关注和研究。可见光通信发射系统需要满足室内照明和通信双重要求，而通信信号强度的大小与光照度成正比，因此，良好的通信和室内照明舒适度均要求室内光照度均匀分布。
LED芯粒的调制带宽(modulation bandwidth)是可见光通信系统信道容量和传输速率的决定性因素，受器件的调制深度、伏安特性等因素的多方面影响，目前的可见光通信器件还不完善，单个LED芯粒的功率较小；芯粒自身发光不均匀；高频电路产生的寄生电容加速信号衰减，导致器件的响应频率较低，调制带宽不能满足可见光通信的需求。
发明内容
本发明的目的是解决现有技术的缺陷，提供一种具有螺旋电感线圈与圆形芯粒的可见光通信LED，采用的技术方案如下：
一种具有螺旋电感线圈与圆形芯粒的可见光通信LED，包括蓝宝石衬底，所述蓝宝石衬底上焊有正极焊点和负极焊点，所述蓝宝石衬底上沉积了若干个发光LED芯粒，前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点，其特征在于，每个发光LED芯粒的外围都围绕着一个螺旋电感线圈，所述螺旋电感线圈的一端与其所围绕的发光LED芯粒的负电极连接，另一端与相邻的发光LED芯粒的正电极连接。
作为优选，本发明包括16个发光LED芯粒，所述16个发光LED芯粒排列成4×4的矩阵。
16个芯粒通过串联形式连构，单颗芯粒电压约为3V，通过电流约为5~30mA,电压16×3V=48V，16个芯粒串联在一起，虽然增加了整个器件的电阻R，但是同样比例缩小了整个器件的电容C，降低了电路中的时间常数，相比单个环形结构的芯粒，其整体响应频率得到提升，同时也便于螺旋电感的排布和制作。
作为优选，所述发光LED芯粒包括GaN/InGaN外延片，所述GaN/InGaN外延片的p型层上设置了透明导电层，所述透明导电层上设置了环形正电极，所述环形正电极将芯粒分隔成内环发光区，中环发光区和外环发光区。
作为优选，所述发光LED芯粒的内环发光区，中环发光区和外环发光区，共三个发光区面积相等。
作为优选，所述GaN/InGaN外延片包括由下至上依次设置的缓冲层、n型层、多量子阱层和p型层。
作为优选，所述螺旋电感线圈的电感数值的范围为20 nH ~200nH。
本发明的实验结果表明在频率为10MHz ~ 100MHz的电路中，添加一个范围是20~200nH的电感，可以有效降低电路中的阻抗，减缓输出信号的衰减，提高可见光发射器件响应频率，增加调制带宽，且随着频率的提高，电路产生的电容增大，谐振所需的电感逐渐减小。
作为优选，所述螺旋电感线圈的规格为外径300μm×300μm，内径170μm×170μm，线宽5μm，线距10μm。
上述具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，包括以下步骤：
在蓝宝石衬底上生长若干个独立的GaN/InGaN外延片，并在衬底上焊正极焊点和负极焊点；
通过磁控溅射法在外延片的p型层上沉积一层透明导电层，并在透明导电层上设置N个环形正电极和负电极，制作成若干个发光LED芯粒；
将若干个芯粒排列成矩阵，并将若干个芯粒串联起来，具体为：将前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点；
在每个芯粒外围蒸镀螺旋电感线圈；
将螺旋电感线圈的一端直接与其所围绕的发光LED芯粒的负电极连接，另一端的引脚与相邻的发光LED芯粒的正电极连接。
作为优选，所述在蓝宝石衬底上生长GaN/InGaN外延片具体包括以下步骤：
在蓝宝石衬底上，使用三甲基镓、三甲基铟、NH3分别作为Ga源、In源和N源，SiH4和CP2Mg分别作为n型和p型掺杂源，先在1100℃、H2环境下热处理，在550℃下生长缓冲层，然后升到1070℃生长所述GaN/InGaN外延片的n型层，再降温至760℃生长量子阱层，最后升至970℃生长p型层，生长完成后在750℃和N2环境中退火。
作为优选，在芯粒外围蒸镀螺旋电感线圈具体包括以下步骤：
按预设要安装螺旋电感线圈的位置，在衬底反面溅射一层金属，作为套刻标记；
在衬底正面溅射上一层种子层，甩上光刻胶，曝光显影后进行螺旋电感线圈和环形电极的蒸镀；
去除光刻胶，用干法刻蚀去除种子层；
在衬底正面再溅射上一层种子层，甩上光刻胶，曝光显影后电镀螺旋电感线圈的引脚，然后再次除去光刻胶，用干法刻蚀去除种子层；
覆上一层绝缘保护层，但保证电感线圈的引脚露出；
在绝缘保护层上蒸镀金属连接线，分别连接前一个LED芯粒的n极和后一个螺旋电感线圈的外端引脚；
作为优选，所述绝缘保护层为二氧化硅绝缘保护层。
与现有技术相比，本发明的有益效果：
1、螺旋电感线圈的加入可以减少发光LED芯粒容性电路中产生的阻抗，起到补偿电容、滤波和保护电路的作用。
2、螺旋电感线圈结构微小，和环形电极一起刻蚀制成并和芯粒连接，不需要外接补偿电路。
3、环形正电极采用双环设计，将发光区分成面积相等的3个部分，有利于提高载流子复合和均匀的发光。
4、采用16个芯粒环形串联连接，弥补了单颗型光电器件照明能力不足，同时也能实现均匀的发光和较好的散热。
附图说明
图1是本发明实施例1的可见光通信LED器件的结构示意图；
图2是发光LED芯粒的结构俯视图；
图3是发光LED芯粒的结构侧视图。
图中，1、外延片的蓝宝石衬底，2、发光LED芯粒，3、螺旋电感线圈，4、器件的正极焊点，5、器件的负极焊点，6、二氧化硅绝缘保护层，7，螺旋电感线圈与芯粒负极的连接线，8、环形正电极，9、透明导电层，10、环形负电极，11、内环发光区，12、中环发光区，13、外环发光区，14、外延片缓冲层，15、外延片n层，16、外延片的多量子阱层，17、外延片p层，18、螺旋电感线圈外圈引脚,19、连接线入口，20、连接线出口。
具体实施方式
下面结合附图和实施例对本发明做进一步详细描述。
实施例1：
如图1所示，一种具有螺旋电感线圈与圆形芯粒的可见光通信LED，包括蓝宝石衬底1，所述蓝宝石衬底上焊有正极焊点4和负极焊点5，所述蓝宝石衬底上沉积了若干个发光LED芯粒2，前一个芯粒的负电极10和后一个芯粒的正电极8连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点，每个发光LED芯粒的外围都围绕着一个螺旋电感线圈3，所述螺旋电感线圈的一端与其所围绕的发光LED芯粒的负电极连接，另一端与相邻的发光LED芯粒的正电极连接。
本实施例包括16个发光LED芯粒，所述16个发光LED芯粒排列成4×4的矩阵。
16个芯粒通过串联形式连构，单颗芯粒电压约为3V，通过电流约为5~30mA,电压16×3V=48V，16个芯粒串联在一起，虽然增加了整个器件的电阻R，但是同样比例缩小了整个器件的电容C，降低了电路中的时间常数，相比单个环形结构的芯粒，其整体响应频率得到提升，同时也便于螺旋电感的排布和制作。
所述发光LED芯粒包括GaN/InGaN外延片，所述GaN/InGaN外延片的p型层上设置了透明导电层9，所述透明导电层上设置了环形正电极8，所述环形正电极将芯粒分隔成内环发光区11，中环发光区12和外环发光区13。
所述GaN/InGaN外延片包括由下至上依次设置的缓冲层14、n型层15、多量子阱层16和p型层17。
所述螺旋电感线圈的电感数值的范围为20 nH ~200nH。
本实施例的实验结果表明在频率为10MHz ~ 100MHz的电路中，添加一个范围是20~200nH的电感，可以有效降低电路中的阻抗，提高可见光发射器件响应频率，且随着频率的提高，谐振所需的电感逐渐减小。
所述螺旋电感线圈的规格为外径300μm×300μm，内径170μm×170μm，线宽5μm，线距10μm。
实施例2：
具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，包括以下步骤：
在蓝宝石衬底上生长若干个独立的GaN/InGaN外延片，并在衬底上焊正电极焊点和负电极焊点；
通过磁控溅射法在外延片的p型层上沉积一层透明导电层，并在透明导电层上设置N个环形正电极，制作成发光LED芯粒；
将若干个芯粒排列成矩阵，并将若干个芯粒串联起来，具体为：将前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点；
在每个芯粒外围蒸镀螺旋电感线圈；
该螺旋电感线圈的一端直接与其所围绕的发光LED芯粒的负电极连接，另一端的引脚通过连接线从连接线出口到连接线入口与相邻的发光LED芯粒的正电极连接。
所述在蓝宝石衬底上生长GaN/InGaN外延片具体包括以下步骤：
在蓝宝石衬底上，使用三甲基镓、三甲基铟、NH3分别作为Ga源、In源和N源，SiH4和CP2Mg作为n型和p型掺杂源，先在1100℃、H2环境下热处理，在550℃下生长缓冲层，然后升到1070℃生长所述GaN/InGaN外延片的n型层，再降温至760℃生长量子阱层，最后升至970℃生长p型层，生长完成后在750℃和N2环境中退火。
在芯粒外围蒸镀螺旋电感线圈具体包括以下步骤：
按预设要安装螺旋电感线圈的位置，在衬底反面溅射一层金属，作为套刻标记；
在衬底正面溅射上一层种子层，甩上光刻胶，曝光显影后进行螺旋电感线圈和环形电极的蒸镀；
去除光刻胶，用干法刻蚀去除种子层；
在衬底正面再溅射上一层种子层，甩上光刻胶，曝光显影后电镀螺旋电感线圈的引脚，然后再次除去光刻胶，用干法刻蚀去除种子层；
覆上一层绝缘保护层，但保证电感线圈的引脚露出；
在绝缘保护层上蒸镀金属连接线，分别连接前一个LED芯粒的n极和后一个螺旋电感线圈的外端引脚。
所述绝缘保护层为二氧化硅绝缘保护层。

Claims (10)

1.具有螺旋电感线圈与圆形芯粒的可见光通信LED，包括蓝宝石衬底，所述蓝宝石衬底上焊有正极焊点和负极焊点，所述蓝宝石衬底上沉积了若干个发光LED芯粒，前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点，其特征在于，每个发光LED芯粒的外围都围绕着一个螺旋电感线圈，所述螺旋电感线圈的一端与其所围绕的发光LED芯粒的负电极连接，另一端与相邻的发光LED芯粒的正电极连接。
2.根据权利要求1所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED，其特征在于，包括16个发光LED芯粒，所述16个发光LED芯粒排列成4×4的矩阵。
3.根据权利要求1所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED，其特征在于，所述发光LED芯粒包括GaN/InGaN外延片，所述GaN/InGaN外延片的p型层上设置了透明导电层，所述透明导电层上设置了环形正电极，所述环形正电极将芯粒分隔成内环发光区，中环发光区和外环发光区。
4.根据权利要求3所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED，其特征在于，所述GaN/InGaN外延片包括由下至上依次设置的缓冲层、n型层、多量子阱层和p型层。
5.根据权利要求1所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED，其特征在于，所述螺旋电感线圈的电感数值的范围为20 nH ~200nH。
6.根据权利要求1所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED，其特征在于，所述螺旋电感线圈的规格为外径为300μm×300μm，内径为170μm×170μm，线宽为5μm，线距为10μm。
7.具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，其特征在于，包括以下步骤：
在蓝宝石衬底上生长若干个独立的GaN/InGaN外延片，并在衬底上焊正极焊点和负极焊点；
通过磁控溅射法在外延片的p型层上沉积一层透明导电层，并在透明导电层上设置N个环形正电极，制作成若干个发光LED芯粒；
将若干个芯粒排列成矩阵，并将若干个芯粒串联起来，具体为：将前一个芯粒的负电极和后一个芯粒的正电极连接，第一个芯粒的正电极和最后一个芯粒的负电极分别连接到衬底上的正极焊点和负极焊点；
在每个芯粒外围蒸镀螺旋电感线圈；
将螺旋电感线圈的一端直接与其所围绕的发光LED芯粒的负电极连接，另一端的引脚与相邻的发光LED芯粒的正电极连接。
8.根据权利要求7所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，其特征在于，所述在蓝宝石衬底上生长GaN/InGaN外延片具体包括以下步骤：
在蓝宝石衬底上，使用三甲基镓、三甲基铟、NH3分别作为Ga源、In源和N源，SiH4和CP2Mg分别作为n型和p型掺杂源，先在1100℃、H2环境下热处理，再在550℃下生长缓冲层，然后升到1070℃生长所述GaN/InGaN外延片的n型层，再降温至760℃生长量子阱层，最后升至970℃生长p型层，生长完成后在750℃和N2环境中退火。
9.根据权利要求7所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，其特征在于，在芯粒外围蒸镀螺旋电感线圈具体包括以下步骤：
按预设要安装螺旋电感线圈的位置，在衬底反面溅射一层金属，作为套刻标记；
在衬底正面溅射上一层种子层，甩上光刻胶，曝光显影后进行螺旋电感线圈和环形电极的蒸镀；
去除光刻胶，用干法刻蚀去除种子层；
在衬底正面再溅射上一层种子层，甩上光刻胶，曝光显影后电镀螺旋电感线圈的引脚，然后再次除去光刻胶，用干法刻蚀去除种子层；
覆上一层绝缘保护层，但保证电感线圈的引脚露出；
在绝缘保护层上蒸镀金属连接线，分别连接前一个LED芯粒的n极和后一个螺旋电感线圈的外端引脚。
10.根据权利要求9所述的具有螺旋电感线圈与圆形芯粒的可见光通信LED的制备方法，其特征在于，所述绝缘保护层为二氧化硅绝缘保护层。
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