JP2020526935A - 特に表面実装型デバイス(smd)のための反射性の複合材料及びこの種の複合材料を有する発光デバイス - Google Patents
特に表面実装型デバイス(smd)のための反射性の複合材料及びこの種の複合材料を有する発光デバイス Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 53
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910002065 alloy metal Inorganic materials 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000005275 alloying Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000010944 silver (metal) Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000003698 laser cutting Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 143
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
2 1上のVの中間層(面A)
3 2上のVの光学活性多層系(面A)
4、5 3の上側層(面A)
6 3の下側層、反射層(面A)
7 3を覆うVの被覆層(面A)
8 1上のVのAl2O3層(面B)
9 金属層又は金属合金層(面B)
A 1の上側面
B 1の下側面
D ワイヤ
D1 1の厚さ
D2 2の厚さ
D3 3の厚さ
D4 4の厚さ
D5 5の厚さ
D6 6の厚さ
D7 7の厚さ
D8 8の厚さ
D9 9の厚さ
DG Vの総厚さ
DIE 発光ダイオード、SMDの裸チップ実施形態(図2、4)
F LFのHフィンガー(図2、3)
L VとPCBとの間の接合層
LF フレーム支持構造(リードフレーム)
LV Vを有する発光デバイス
M LVの透明な物質(図4)
PCB プリント基板
Q LFのHクロスバー(図3)
SMD 電子デバイス(表面実装デバイス)
SP 溶接点(図2)
V 複合材料
Z ツェナーダイオード、SMDの実施形態(図2)
Claims (18)
- アルミニウムからなるキャリア(1)と、前記キャリア(1)の一方の面(A)上に配された酸化アルミニウムからなる中間層(2)と、前記中間層(2)上に被着された反射増幅光学活性多層系(3)とを有する反射性の複合材料(V)であって、
酸化アルミニウムからなる前記中間層(2)は5nm〜200nmの範囲内の厚さ(D2)を有し、前記キャリア(1)の、前記反射増幅光学活性多層系(3)とは反対側の当該面(B)の表面には、25℃にて、最大1.2*10−1Ωmm2/mの比電気抵抗を有する金属層又は合金金属層(9)が被着され、その際、表面に被着された前記層(9)の当該厚さ(D9)は10nm〜5.0μmの範囲内にあることを特徴とする複合材料(V)。 - 前記キャリア(1)の、前記反射増幅光学活性多層系(3)とは反対側の当該面(B)の表面に被着された前記金属層又は合金金属層(9)は、25℃にて、最大2.7*10−2Ωmm2/m、好ましくは、最大1.8*10−2Ωmm2/mの比電気抵抗を有することを特徴とする、請求項1に記載の複合材料(V)。
- 酸化アルミニウムからなる前記中間層(2)は10〜100nmの範囲内の厚さ(D2)を有することを特徴とする、請求項1又は2に記載の複合材料(V)。
- アルミニウムからなる前記キャリア(1)と表面被着された前記金属層又は金属合金層(9)との間に、遷移金属、特にチタン、クロム又はニッケルからなる接着促進層(10)が配置されていることを特徴とする、請求項1から3のいずれか一項に記載の複合材料(V)。
- 表面被着された前記金属層又は金属合金層(9)は、特に、0.1μm〜5.0μmの範囲内、好ましくは0.2μm〜3.0μmの範囲内、特に好ましくは0.5μm〜1.5μmの範囲内の厚さ(D9)を有する銅層であることを特徴とする、請求項1から4のいずれか一項に記載の複合材料(V)。
- 表面被着された前記金属層又は金属合金層(9)は、特に、10nm〜500nmの範囲内、好ましくは50nm〜250nmの範囲内の厚さ(D9)を有する銀層であることを特徴とする、請求項1から4のいずれか一項に記載の複合材料(V)。
- 表面被着された前記金属層又は金属合金層(9)上に、好ましくはAg、Ni、Pd及び/又はAuからなり、10nm〜500nmの範囲内、好ましくは50nm〜250nmの範囲内の厚さを有する不動態層が堆積されていることを特徴とする、請求項1から6のいずれか一項に記載の複合材料(V)。
- 銀層は、表面被着された金属層又は金属合金層(9)として及び/又はその上に位置する不動態層として及び/又は前記反射増幅光学活性多層系(3)の一つの反射層(6)として合金化され、合金元素として一つ又は複数の希土類元素及び/又はパラジウム、白金、金、銅、インジウム、チタン、スズ及び/又はモリブデンを含むことを特徴とする、請求項1から7のいずれか一項に記載の複合材料(V)。
- 前記中間層(2)の上方に配置された、特に前記光学的多層系(3)の、一つ又は複数の層(4、5、6、7)並びに表面被着された前記金属層又は金属合金層(9)及び/又は前記不動態層は、スパッタリング層、特に反応性スパッタリングによって生成された層、CVD層若しくはPECVD層、又は、特に電子衝撃によるか又は熱源からの蒸発によって生成された層であることを特徴とする、請求項1から8のいずれか一項に記載の複合材料(V)。
- 前記キャリア(1)の当該アルミニウムは99.0%を上回る純度を有することを特徴とする、請求項1から9のいずれか一項に記載の複合材料(V)。
- 前記キャリア(1)は、0.1〜1.5mm、好ましくは0.2〜0.8mmの厚さ(D1)を有することを特徴とする、請求項1から10のいずれか一項に記載の複合材料(V)。
- 前記光学多層系(3)の前記面(A)上の、DIN5036、Teil3(11/79版)に準拠した光全反射率は97%を超え、好ましくは少なくとも98%であることを特徴とする、請求項1から11のいずれか一項に記載の複合材料(V)。
- 表面実装されたデバイス(SMD)のためのフレーム支持構造(LF)として形成され、その際、前記フレーム支持構造(LF)は、特に平面図で見て、H字状の形を有し、そのクロスバー(Q)は、フィンガー(F)として形成されたシート間を、好ましくは斜めに延び、その際、前記フレーム支持構造(LF)は、好ましくは、打ち抜き部品・部材及び/又は曲げ部品・部材として又はレーザカッティングによって製造されていることを特徴とする、請求項1から12のいずれか一項に記載の複合材料(V)。
- 多数のフレーム支持構造(LF)がウェブを介して行要素及び列要素として区画状に一体化されている、ストリップ状のシートバーの形のフレームデバイスとして形成されていることを特徴とする、請求項13に記載の複合材料(V)。
- 1600mmまでの幅、好ましくは1250mmの幅を有するコイルとして形成されていることを特徴とする、請求項1から12のいずれか一項に記載の複合材料(V)。
- 請求項1から15のいずれか一項に記載の複合材料(V)を含み、電子デバイス(SMD)のためのフレーム支持構造(LF)を形成する、発光デバイス(LV)であって、
その際、前記電子デバイス(SMD)は前記フレーム支持構造(LF)の当該上側面(A)に載設されて固定されていると共に、別個のワイヤ(D)によって前記フレーム支持構造(LF)と電気的に接触させられ、その際、前記電子デバイス(SMD)と前記フレーム支持構造(LF)とからなる当該複合体は、当該下側面(B)において、プリント基板(PCB)と導電物質一体化接合されているように構成した発光デバイス(LV)。 - 前記フレーム支持構造(LF)は、スズ含有はんだ層(L)を介して、前記基板(PCB)と接合されていることを特徴とする、請求項16に記載の発光デバイス(LV)。
- 前記電子デバイス(SMD)はチップ(DIE)として形成された発光ダイオード(LED)であることを特徴とする、請求項15又は16に記載の発光デバイス(LV)。
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08292308A (ja) * | 1995-04-24 | 1996-11-05 | Toshiba Lighting & Technol Corp | 反射体およびこれを用いた反射形照明装置 |
JP2008016797A (ja) * | 2006-07-07 | 2008-01-24 | Lg Electronics Inc | 発光素子実装用サブマウント及び発光素子パッケージ |
JP2011146741A (ja) * | 2008-12-26 | 2011-07-28 | Furukawa Electric Co Ltd:The | 光半導体装置用リードフレーム、その製造方法および光半導体装置 |
JP2013008721A (ja) * | 2011-06-22 | 2013-01-10 | Panasonic Corp | 実装基板および発光モジュール |
JP2013062490A (ja) * | 2011-08-23 | 2013-04-04 | Dainippon Printing Co Ltd | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、および光半導体装置 |
JP2013143559A (ja) * | 2012-01-13 | 2013-07-22 | Nichia Chem Ind Ltd | 発光装置及び照明装置 |
CN203277501U (zh) * | 2013-05-14 | 2013-11-06 | 李刚 | 带光反射层的基板结构及半导体发光光源 |
JP2014042011A (ja) * | 2012-08-23 | 2014-03-06 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
US20150069438A1 (en) * | 2013-09-09 | 2015-03-12 | Luminus, Inc. | Distributed bragg reflector on an aluminum package for an led |
JP2015126137A (ja) * | 2013-12-26 | 2015-07-06 | アピックヤマダ株式会社 | リードフレーム、ledパッケージ用基板、リフレクタ部材、ledパッケージ、発光装置、発光システム、並びに、ledパッケージ用基板及びledパッケージの製造方法 |
JP2015201608A (ja) * | 2014-04-10 | 2015-11-12 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
US20150349221A1 (en) * | 2014-05-30 | 2015-12-03 | Bridgelux, Inc. | Light-emitting device package |
WO2017032807A2 (de) * | 2015-08-25 | 2017-03-02 | Alanod Gmbh & Co. Kg | Reflektierendes verbundmaterial mit einem aluminium-träger und mit einer silber-reflexionsschicht |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE58909875D1 (de) | 1989-05-31 | 2000-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Montieren eines oberflächenmontierbaren Opto-Bauelements |
DE29812559U1 (de) | 1998-07-15 | 1999-11-25 | Alanod Aluminium Veredlung Gmb | Verbundmaterial für Reflektoren |
ATE247797T1 (de) | 1998-11-12 | 2003-09-15 | Alcan Tech & Man Ag | Reflektor mit resistenter oberfläche |
SE0000751D0 (sv) | 2000-03-07 | 2000-03-07 | Swetree Genomics Ab | Transgenic trees and methods for their production |
US6407411B1 (en) | 2000-04-13 | 2002-06-18 | General Electric Company | Led lead frame assembly |
DE20021660U1 (de) * | 2000-12-20 | 2002-05-02 | Alanod Aluminium Veredlung Gmb | Verbundmaterial |
DE10126100A1 (de) | 2001-05-29 | 2002-12-05 | Linde Ag | Verfahren und Vorrichtung zum Kaltgasspritzen |
DE10148567A1 (de) | 2001-10-01 | 2003-07-31 | Basf Ag | Verfahren und Vorrichtung zur Untersuchung der Härtung härtbarer Formulierungen |
JP4360788B2 (ja) | 2002-08-29 | 2009-11-11 | シチズン電子株式会社 | 液晶表示板用のバックライト及びそれに用いる発光ダイオードの製造方法 |
JP5262136B2 (ja) | 2008-01-28 | 2013-08-14 | 株式会社村田製作所 | 電子部品の製造方法 |
US20110095310A1 (en) | 2008-03-26 | 2011-04-28 | Shimane Prefectural Government | Semiconductor light emitting module and method of manufacturing the same |
DE102008029743A1 (de) | 2008-06-25 | 2009-12-31 | Manfred Grimm | Verfahren zur Herstellung eines Downlight-Reflektors |
KR101077264B1 (ko) * | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 |
EP2416389A4 (en) * | 2009-03-31 | 2012-08-01 | Toshiba Lighting & Technology | LIGHT-EMITTING DEVICE AND LIGHTING DEVICE |
TWI557933B (zh) | 2010-03-30 | 2016-11-11 | Dainippon Printing Co Ltd | A manufacturing method of a wire frame or a substrate for a light emitting diode, a semiconductor device, and a wire frame or a substrate for a light emitting diode |
DE102010013865B4 (de) * | 2010-04-01 | 2015-12-31 | Alanod Gmbh & Co. Kg | Reflektor mit hoher Resistenz gegen Witterungs- und Korrosionseinflüsse und Verfahren zu seiner Herstellung |
KR101890084B1 (ko) * | 2010-11-02 | 2018-08-20 | 다이니폰 인사츠 가부시키가이샤 | 리드 프레임 및 반도체 장치 |
TWI580075B (zh) * | 2010-11-12 | 2017-04-21 | 三菱綜合材料股份有限公司 | 適用發光元件之反射膜用組成物、發光元件及發光元件之製造方法 |
DE202011050976U1 (de) * | 2011-08-12 | 2012-11-15 | Alanod Aluminium-Veredlung Gmbh & Co. Kg | Hochreflektierendes Trägermaterial für lichtemittierende Dioden und lichtemittierende Vorrichtung mit einem derartigen Trägermaterial |
US9102851B2 (en) | 2011-09-15 | 2015-08-11 | Trillion Science, Inc. | Microcavity carrier belt and method of manufacture |
US8739391B2 (en) * | 2011-09-21 | 2014-06-03 | HGST Netherlands B.V. | Silver alloy electrical lapping guides (ELGs) for fabrication of disk drive sliders with magnetoresistive sensors |
DE202011051927U1 (de) * | 2011-11-10 | 2013-02-11 | Alanod Aluminium-Veredlung Gmbh & Co. Kg | Laserschweißbares Verbundmaterial |
US20150077982A1 (en) | 2012-05-31 | 2015-03-19 | Panasonic Corporation | Led module, lighting device, and lamp |
DE102012108719A1 (de) * | 2012-09-17 | 2014-03-20 | Alanod Gmbh & Co. Kg | Reflektor, Beleuchtungskörper mit einem derartigen Reflektor und Verwendung eines Basismaterials zu dessen Herstellung |
TW201427113A (zh) * | 2012-12-21 | 2014-07-01 | Ind Tech Res Inst | 發光二極體封裝的固晶方法和固晶結構 |
US10295124B2 (en) * | 2013-02-27 | 2019-05-21 | Cree, Inc. | Light emitter packages and methods |
JP6291713B2 (ja) * | 2013-03-14 | 2018-03-14 | 日亜化学工業株式会社 | 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム |
JP6032086B2 (ja) * | 2013-03-25 | 2016-11-24 | 豊田合成株式会社 | 発光装置 |
DE102013218541A1 (de) * | 2013-09-16 | 2015-03-19 | Osram Gmbh | Leuchtmodul mit Halbleiterlichtquellen und Trägerplatte |
EP3084850B1 (en) | 2013-12-19 | 2022-03-09 | Lumileds LLC | Light emitting device package |
JP2015169677A (ja) | 2014-03-04 | 2015-09-28 | コニカミノルタ株式会社 | 偏光性積層フィルムの製造方法及び偏光板の製造方法 |
JP6366337B2 (ja) * | 2014-04-23 | 2018-08-01 | シチズン電子株式会社 | Led発光装置及びその製造方法 |
JP5975186B1 (ja) | 2015-02-27 | 2016-08-23 | 三菱マテリアル株式会社 | Ag合金スパッタリングターゲット及びAg合金膜の製造方法 |
US10559731B1 (en) * | 2015-03-04 | 2020-02-11 | Bridgelux Inc. | Highly reliable and reflective LED substrate |
CN107405673B (zh) | 2015-03-06 | 2020-12-01 | 艾森鲍.克莱默有限责任公司 | 在制造多层重型管期间施加包覆层的方法和敷层装置 |
DE102015004633B4 (de) | 2015-04-10 | 2017-07-13 | Ellenberger & Poensgen Gmbh | Stromverteilungssystem zum Anschluss an ein Wechselspannungsnetz |
DE202015008952U1 (de) | 2015-04-13 | 2016-05-19 | Jürgen Buchstaller | Vorrichtung zur Halterung eines Köders |
DE202015009414U1 (de) | 2015-06-05 | 2017-07-05 | Johann Borgers GmbH | Kraftfahrzeuginnenraumverkleidungsmaterial und Kraftfahrzeuginnenraumverkleidungsbauteil |
DE102015211843A1 (de) * | 2015-06-25 | 2016-12-29 | Conti Temic Microelectronic Gmbh | Elektronische Komponente und Verfahren zur Herstellung einer elektronischen Komponente |
DE102015114094A1 (de) | 2015-08-25 | 2017-03-02 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial mit lackiertem Aluminium-Träger und mit einer Silber-Reflexionsschicht und Verfahren zu dessen Herstellung |
DE202015008045U1 (de) | 2015-10-09 | 2015-12-09 | Clariant International Ltd. | Universelle Pigmentdispersionen auf Basis von N-Alkylglukaminen |
KR102486032B1 (ko) * | 2015-11-04 | 2023-01-11 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 장치 |
CN106328641B (zh) * | 2016-10-11 | 2018-12-28 | 华南师范大学 | 具有螺旋电感的可见光通信led及其制备方法 |
KR102238351B1 (ko) * | 2017-03-28 | 2021-04-09 | 도시바 마테리알 가부시키가이샤 | 반도체 발광 소자 |
DE102017115798A1 (de) | 2017-07-13 | 2019-01-17 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial |
-
2017
- 2017-07-13 DE DE102017115798.0A patent/DE102017115798A1/de not_active Withdrawn
- 2017-10-12 EP EP17196142.8A patent/EP3428696B9/de active Active
- 2017-10-12 ES ES17196142T patent/ES2928618T3/es active Active
- 2017-10-12 PL PL17196142.8T patent/PL3428696T3/pl unknown
- 2017-11-17 TW TW106139933A patent/TWI661153B/zh active
- 2017-12-08 CN CN201780093051.5A patent/CN110870085B/zh active Active
- 2017-12-08 US US16/629,846 patent/US11444226B2/en active Active
- 2017-12-08 DE DE112017007738.9T patent/DE112017007738A5/de active Pending
- 2017-12-08 WO PCT/EP2017/081991 patent/WO2019011456A1/de active Application Filing
-
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- 2018-06-15 TW TW107120783A patent/TW201909457A/zh unknown
-
2020
- 2020-01-10 PH PH12020500088A patent/PH12020500088A1/en unknown
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08292308A (ja) * | 1995-04-24 | 1996-11-05 | Toshiba Lighting & Technol Corp | 反射体およびこれを用いた反射形照明装置 |
JP2008016797A (ja) * | 2006-07-07 | 2008-01-24 | Lg Electronics Inc | 発光素子実装用サブマウント及び発光素子パッケージ |
JP2011146741A (ja) * | 2008-12-26 | 2011-07-28 | Furukawa Electric Co Ltd:The | 光半導体装置用リードフレーム、その製造方法および光半導体装置 |
JP2013008721A (ja) * | 2011-06-22 | 2013-01-10 | Panasonic Corp | 実装基板および発光モジュール |
JP2013062490A (ja) * | 2011-08-23 | 2013-04-04 | Dainippon Printing Co Ltd | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、および光半導体装置 |
JP2013143559A (ja) * | 2012-01-13 | 2013-07-22 | Nichia Chem Ind Ltd | 発光装置及び照明装置 |
JP2014042011A (ja) * | 2012-08-23 | 2014-03-06 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
CN203277501U (zh) * | 2013-05-14 | 2013-11-06 | 李刚 | 带光反射层的基板结构及半导体发光光源 |
US20150069438A1 (en) * | 2013-09-09 | 2015-03-12 | Luminus, Inc. | Distributed bragg reflector on an aluminum package for an led |
JP2015126137A (ja) * | 2013-12-26 | 2015-07-06 | アピックヤマダ株式会社 | リードフレーム、ledパッケージ用基板、リフレクタ部材、ledパッケージ、発光装置、発光システム、並びに、ledパッケージ用基板及びledパッケージの製造方法 |
JP2015201608A (ja) * | 2014-04-10 | 2015-11-12 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
US20150349221A1 (en) * | 2014-05-30 | 2015-12-03 | Bridgelux, Inc. | Light-emitting device package |
WO2017032807A2 (de) * | 2015-08-25 | 2017-03-02 | Alanod Gmbh & Co. Kg | Reflektierendes verbundmaterial mit einem aluminium-träger und mit einer silber-reflexionsschicht |
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Publication number | Publication date |
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EP3428696A1 (de) | 2019-01-16 |
CN115524773A (zh) | 2022-12-27 |
TWI661153B (zh) | 2019-06-01 |
KR20200026195A (ko) | 2020-03-10 |
US11469357B2 (en) | 2022-10-11 |
KR102592772B1 (ko) | 2023-10-20 |
DE102017115798A1 (de) | 2019-01-17 |
US20210167262A9 (en) | 2021-06-03 |
ES2928618T3 (es) | 2022-11-21 |
WO2019011554A1 (de) | 2019-01-17 |
EP3652569B1 (de) | 2024-08-14 |
US20200194641A1 (en) | 2020-06-18 |
CN110678784A (zh) | 2020-01-10 |
PH12020500088A1 (en) | 2020-09-14 |
EP3428696B9 (de) | 2022-09-28 |
WO2019011456A1 (de) | 2019-01-17 |
US20210367111A1 (en) | 2021-11-25 |
EP3428696B1 (de) | 2022-07-20 |
DE112017007738A5 (de) | 2020-04-09 |
CN110870085B (zh) | 2023-05-12 |
US11444226B2 (en) | 2022-09-13 |
TW201909457A (zh) | 2019-03-01 |
CN110870085A (zh) | 2020-03-06 |
PL3428696T3 (pl) | 2022-11-14 |
JP7137868B2 (ja) | 2022-09-15 |
EP3652569A1 (de) | 2020-05-20 |
TW201908645A (zh) | 2019-03-01 |
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