JP2014042011A - 発光素子及びこれを備えた照明システム - Google Patents
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Abstract
【解決手段】第1長さを有して互いに対応する第1及び第2側壁11、12、第1及び第2側壁に隣接し、第1長さより短い第2長さを有する第3及び第4側壁13、14、上部が開放された凹部を有する胴体10、凹部に配置され凹部の底より低い深さを有する第1キャビティー25を含む第1リードフレーム21、凹部に配置され凹部の底より低い深さを有する第2キャビティー35を含む第2リードフレーム31、第1及び第2リードフレームの間に配置された間隙部19、第1キャビティーに第1発光チップ71、及び第2キャビティーに第2発光チップ72を含み、第1リードフレームは胴体の第3側壁に突出した第1リード部23、及び胴体の第2側壁に配置された支持突起27を含み、第2リードフレームは前記胴体の第4側壁に突出した第2リード部33、及び胴体の第1側壁に配置された支持突起36を含む。
【選択図】図2
Description
また、前記第1及び第2リードフレーム21、31のY軸方向の最大直線長さは前記胴体10の上部幅(Y3)よりは広いことがある。
実施形態による発光素子又は発光素子は、照明システムに適用される。前記照明システムは、複数の発光素子がアレイされた構造を含み、図32及び図33に示されている表示装置、図34に示されている照明装置とを含み、照明灯、信号灯、車両前照灯、電光板などが含まれる。
Claims (18)
- 第1長さを有し、互いに対応する第1及び第2側壁、前記第1側壁及び第2側壁に隣接し、前記第1長さより短い第2長さを有する第3及び第4側壁、上部が開放された凹部を有する胴体と、
前記凹部に配置され、前記凹部の底より低い深さを有する第1キャビティーを含む第1リードフレームと、
前記凹部に配置され、前記凹部の底より低い深さを有する第2キャビティーを含む第2リードフレームと、
前記第1及び第2リードフレームの間に配置された間隙部と、
前記第1キャビティーに配置された第1発光チップと、
前記第2キャビティーに配置された第2発光チップと、を含み、
前記第1リードフレームは前記胴体の第3側壁に突出した第1リード部及び前記胴体の第1側壁に配置された第1支持突起を含み、
前記第2リードフレームは前記胴体の第4側壁に突出した第2リード部及び前記胴体の第2側壁に配置された第2支持突起を含むことを特徴とする、発光素子。 - 前記第1リードフレームは前記凹部の底に配置され、前記第1キャビティーの側面に連結された第1支持部及び前記第1支持部から突出し、前記第2側壁に配置された第3支持突起を含むことを特徴とする、請求項1に記載の発光素子。
- 前記第2リードフレームは前記凹部の底に配置され、前記第2キャビティーの側面に連結された第2支持部、及び前記第2支持部から突出し、前記第1側壁に露出した第4支持突起を含むことを特徴とする、請求項2に記載の発光素子。
- 前記第2側壁に配置された前記第2支持突起と前記第3支持突起との間の間隔は前記間隙部の上面の幅より広いことを特徴とする、請求項2または3に記載の発光素子。
- 前記第2支持突起と前記第3支持突起との間の間隔は前記第1支持突起と第4支持突起との間の間隔と同一であることを特徴とする、請求項3に記載の発光素子。
- 前記第2支持突起と前記第3支持突起との間の間隔は前記第1発光チップと前記第2発光チップとの間の距離より狭いことを特徴とする、請求項2乃至5のうち、いずれか1項に記載の発光素子。
- 前記第2支持突起と前記第3支持突起との間の間隔は前記第3側壁に隣接した前記第1キャビティーの外側面と前記第4側壁に隣接した前記第2キャビティーの外側面とを連結する距離より短いことを特徴とする、請求項2乃至6のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2支持突起は前記胴体の底より高く、前記胴体の上部より低い位置に位置することを特徴とする、請求項1乃至7のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2支持突起は、前記第1及び第2発光チップの上面幅より狭い幅を有することを特徴とする、請求項1乃至8のうち、いずれか1項に記載の発光素子。
- 前記第1側壁及び前記第2側壁は、前記胴体の底の垂直な軸に対して傾斜し、
前記第1及び第2支持突起の上面及び下面は前記胴体に結合されることを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。 - 前記第1支持突起は前記胴体の第4側壁より前記胴体の第3側壁に一層近く配置され、前記第2支持突起は前記胴体の第3側壁より前記胴体の第4側壁に一層近く配置されることを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 前記第1長さは前記第2長さより3倍以上長い長さを有し、前記第1及び第2キャビティーの下面は前記胴体の下面のオープン領域に配置されることを特徴とする、請求項1乃至11のうち、いずれか1項に記載の発光素子。
- 前記第1支持突起は前記第1側壁に複数個が配置され、前記複数個の第1支持突起は前記胴体の底から互いに同一な高さを有することを特徴とする、請求項1乃至12のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2側壁は前記胴体の底に対して垂直な面を含み、前記第1及び第2支持突起のうちの少なくとも1つは前記垂直な面に配置されることを特徴とする、請求項1乃至13のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2支持突起の各々は50μm〜500μm範囲の幅を有し、前記第1及び第2支持突起は前記第1及び第2リードフレームの厚さと同一な厚さを有することを特徴とする、請求項1乃至14のうち、いずれか1項に記載の発光素子。
- 前記第1キャビティーと前記第2キャビティーにモールディング部材を含み、
前記第1支持突起及び前記第2支持突起は、前記胴体の底から前記第1及び第2発光チップの下面より高い高さに位置することを特徴とする、請求項1乃至15のうち、いずれか1項に記載の発光素子。 - 前記第1支持部は前記胴体の第1及び第2側壁方向に延長され、前記第1支持突起に連結された第1延長部を含み、
前記第2支持部は前記胴体の第1及び第2側壁方向に延長され、前記第2支持突起に連結された第2延長部を含むことを特徴とする、請求項16に記載の発光素子。 - 前記第1及び第2支持突起は、前記第1及び第2延長部から水平に突出することを特徴とする、請求項17に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120092594A KR101886157B1 (ko) | 2012-08-23 | 2012-08-23 | 발광 소자 및 조명시스템 |
KR10-2012-0092594 | 2012-08-23 |
Publications (2)
Publication Number | Publication Date |
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JP2014042011A true JP2014042011A (ja) | 2014-03-06 |
JP5815610B2 JP5815610B2 (ja) | 2015-11-17 |
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004534405A (ja) * | 2001-06-29 | 2004-11-11 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面に取り付け可能な放射線放出構造素子およびその製造法 |
JP2006093435A (ja) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Led装置 |
JP2006222382A (ja) * | 2005-02-14 | 2006-08-24 | Nichia Chem Ind Ltd | 半導体装置及び半導体装置の形成方法 |
JP2007027765A (ja) * | 2005-07-19 | 2007-02-01 | Samsung Electro-Mechanics Co Ltd | 側面放出型二重レンズ構造ledパッケージ |
JP2007281250A (ja) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | 半導体発光装置 |
JP2008124195A (ja) * | 2006-11-10 | 2008-05-29 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
JP2008192882A (ja) * | 2007-02-06 | 2008-08-21 | Toshiba Corp | 発光装置 |
US20080273340A1 (en) * | 2007-03-23 | 2008-11-06 | Keat Chuan Ng | Solid State Light Source Having a Variable Number of Dies |
US20080296592A1 (en) * | 2007-05-29 | 2008-12-04 | Iwatani International Corporation And Iwatani Electronics Corporation | Semiconductor Light-Emitting Device |
JP2011134902A (ja) * | 2009-12-24 | 2011-07-07 | Toyoda Gosei Co Ltd | Led発光装置 |
JP2011146709A (ja) * | 2010-01-15 | 2011-07-28 | Lg Innotek Co Ltd | 発光装置、照明システム |
US20110186873A1 (en) * | 2009-06-05 | 2011-08-04 | Emerson David T | Light emitting device packages, systems and methods |
JP2012142426A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Ledパッケージ及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635987B1 (en) | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
EP2280430B1 (en) * | 2005-03-11 | 2020-01-01 | Seoul Semiconductor Co., Ltd. | LED package having an array of light emitting cells coupled in series |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
DE102008021618A1 (de) * | 2007-11-28 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Chipanordnung, Anschlussanordnung, LED sowie Verfahren zur Herstellung einer Chipanordnung |
JP2009275196A (ja) | 2008-05-19 | 2009-11-26 | Sony Corp | 硬化性樹脂材料組成物、光学材料、発光装置及びその製造方法、並びに電子デバイス |
KR101491485B1 (ko) * | 2008-11-18 | 2015-02-11 | 삼성전자주식회사 | 측면 방출형 발광장치 및 선광원형 발광장치 |
US10431567B2 (en) * | 2010-11-03 | 2019-10-01 | Cree, Inc. | White ceramic LED package |
KR101103674B1 (ko) | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
JP2012028699A (ja) * | 2010-07-27 | 2012-02-09 | Panasonic Corp | 半導体装置、リードフレーム集合体及びその製造方法 |
KR20120022410A (ko) | 2010-09-02 | 2012-03-12 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조 방법 |
KR101812761B1 (ko) * | 2011-03-02 | 2017-12-28 | 서울반도체 주식회사 | 발광다이오드 패키지 |
-
2012
- 2012-08-23 KR KR1020120092594A patent/KR101886157B1/ko active IP Right Grant
-
2013
- 2013-07-10 US US13/938,469 patent/US9362461B2/en not_active Expired - Fee Related
- 2013-07-23 JP JP2013152170A patent/JP5815610B2/ja active Active
- 2013-07-26 EP EP13178138.7A patent/EP2701193B1/en active Active
- 2013-08-22 CN CN201310368716.2A patent/CN103633079B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004534405A (ja) * | 2001-06-29 | 2004-11-11 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面に取り付け可能な放射線放出構造素子およびその製造法 |
JP2006093435A (ja) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Led装置 |
JP2006222382A (ja) * | 2005-02-14 | 2006-08-24 | Nichia Chem Ind Ltd | 半導体装置及び半導体装置の形成方法 |
JP2007027765A (ja) * | 2005-07-19 | 2007-02-01 | Samsung Electro-Mechanics Co Ltd | 側面放出型二重レンズ構造ledパッケージ |
JP2007281250A (ja) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | 半導体発光装置 |
JP2008124195A (ja) * | 2006-11-10 | 2008-05-29 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
JP2008192882A (ja) * | 2007-02-06 | 2008-08-21 | Toshiba Corp | 発光装置 |
US20080273340A1 (en) * | 2007-03-23 | 2008-11-06 | Keat Chuan Ng | Solid State Light Source Having a Variable Number of Dies |
US20080296592A1 (en) * | 2007-05-29 | 2008-12-04 | Iwatani International Corporation And Iwatani Electronics Corporation | Semiconductor Light-Emitting Device |
US20110186873A1 (en) * | 2009-06-05 | 2011-08-04 | Emerson David T | Light emitting device packages, systems and methods |
JP2011134902A (ja) * | 2009-12-24 | 2011-07-07 | Toyoda Gosei Co Ltd | Led発光装置 |
JP2011146709A (ja) * | 2010-01-15 | 2011-07-28 | Lg Innotek Co Ltd | 発光装置、照明システム |
JP2012142426A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Ledパッケージ及びその製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014150244A (ja) * | 2013-01-11 | 2014-08-21 | Kaneka Corp | 発光素子実装用リードフレーム、樹脂成型体及び表面実装型発光装置 |
JP2019087755A (ja) * | 2014-09-29 | 2019-06-06 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
US9627597B2 (en) | 2014-12-26 | 2017-04-18 | Nichia Corporation | Package, light-emitting device, and method for manufacturing the same |
US9978920B2 (en) | 2014-12-26 | 2018-05-22 | Nichia Corporation | Package, light-emitting device, and method for manufacturing the same |
JP2017103295A (ja) * | 2015-11-30 | 2017-06-08 | 日亜化学工業株式会社 | パッケージ、パッケージ中間体、発光装置及びそれらの製造方法 |
JP2017107989A (ja) * | 2015-12-09 | 2017-06-15 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
JP2017107965A (ja) * | 2015-12-09 | 2017-06-15 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
US10847669B1 (en) | 2017-06-23 | 2020-11-24 | Panasonic Intellectual Property Management Co., Ltd. | Photodetection element including photoelectric conversion structure and avalanche structure |
JP2020526935A (ja) * | 2017-07-13 | 2020-08-31 | アラノート・ゲー・エム・ベー・ハー・ウント・コー・カー・ゲーAlanod Gmbh & Co. Kg | 特に表面実装型デバイス(smd)のための反射性の複合材料及びこの種の複合材料を有する発光デバイス |
JP7137868B2 (ja) | 2017-07-13 | 2022-09-15 | アラノート・ゲー・エム・ベー・ハー・ウント・コー・カー・ゲー | 特に表面実装型デバイス(smd)のための反射性の複合材料及びこの種の複合材料を有する発光デバイス |
Also Published As
Publication number | Publication date |
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EP2701193B1 (en) | 2018-06-27 |
US9362461B2 (en) | 2016-06-07 |
US20140054629A1 (en) | 2014-02-27 |
EP2701193A2 (en) | 2014-02-26 |
CN103633079B (zh) | 2016-10-26 |
EP2701193A3 (en) | 2015-12-16 |
KR101886157B1 (ko) | 2018-08-08 |
CN103633079A (zh) | 2014-03-12 |
KR20140026877A (ko) | 2014-03-06 |
JP5815610B2 (ja) | 2015-11-17 |
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