CN1154125C - 抗电磁干扰元件及拥有该元件的有源器件 - Google Patents
抗电磁干扰元件及拥有该元件的有源器件 Download PDFInfo
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Abstract
一种抗电磁干扰元件,对有源器件设置,不损害原有器件的功能,对向外辐射的电磁波的穿透具有屏蔽效果,而且可以抑制因与周围元件之间的相互干扰和对信号线的电磁感应引起的误动作。抗电磁干扰元件由包含表面具有氧化膜的软磁粉末和有机粘接剂的复合磁性体构成,因该复合磁性体具有复导磁系数的关系,所以,将不需要的高频电磁辐射转换成热,使之消灭。
Description
技术领域
本发明涉及抗电磁干扰(EMI:Electro-Magnetic Interference)元件及拥有该元件的有源器件,特别涉及能抑制由高频区杂散电磁波产生的向外辐射、性能降低和异常共振等电磁波干扰的抗电磁干扰元件及拥有该元件的有源器件。
背景技术
近年来,以数字电子仪器为首,高频电子仪器趋于小型化。而且,在印刷电路板元件安装密度高的数字电子仪器中,将中央处理器(CPU)、图象处理算术逻辑运算器(IPLU)等LsI和IC安装在印刷电路板上。这些LSI和IC由很多半导体器件构成,因为这些半导体器件接受外部供给的能量进行放大或振荡等工作,故一般称之为有源器件。而且这样的有源器件多数会产生感应噪声。该感应噪声在印刷电路板的元件安装面和背面感应出高频磁场。这里的问题是,因由静电耦合和电磁耦合产生的线间耦合的增大以及由辐射噪声产生的电磁干扰引起的性能降低和异常共振等现象。
以往,对于这样的所谓电磁波干扰,通过采取在电路中插入低通滤波器、将有问题的电路离得远些或进行屏蔽等手段来抑制成为电磁波干扰原因的电磁耦合和不需要的辐射噪声。
但是,在先有的对付电磁波干扰的方法中,插入噪声滤波器的方法和进行屏蔽的方法都必须占用安装空间,这在实现高密度化这一点上很难说是有效的方法。同样,将有问题的电路离得远些的方法也是与高密度化背道而驰的。再有,以往所采用方法还有所谓遮蔽的方法,用金属板或镀上金属的导体将有问题的电路围起来,其目的是使内部产生的噪声不向外部泄漏同时不使外部噪声侵入内部,假如用于遮蔽的金属板的距离太近,虽然可以得到较好的穿透衰减,但却助长了因杂散辐射源的反射引起的电磁耦合,其结果,多数情况会引起二次电磁干扰。
因此,本发明的课题是提供一种抗电磁干扰元件及拥有该元件的有源器件,不损害原有电路的功能,对向外辐射电磁波的穿透具有足够的遮蔽效果,而且可以抑制因与周围元件之间的相互干扰和对信号线的电磁感应而引起的误动作。
发明内容
若按照本发明,可以得到一种能抑制从有源器件辐射的感应噪声的抗电磁干扰元件,其特征在于,该抗电磁干扰元件是由包含表面具有氧化膜的软磁粉末和有机粘接剂的复合磁性体构成的;上述表面具有氧化膜的软磁粉末呈扁平状和(或)针状;上述呈扁平状和(或)针状的软磁粉末在上述复合磁性体中呈定向排列。
若按照本发明的一个形式,一种上述抗电磁干扰元件,为了使上述有源器件散热,形成开口,使上述有源器件表面的一部分露出来。
若按照本发明,可以得到具有抗电磁干扰元件的有源器件,其特征在于上述任何一种抗电磁干扰元件配置在有源器件上面。
若按照本发明,可以得到具有抗电磁干扰元件的有源器件,其特征在于,上述任何一种抗电磁干扰元件配置在有源器件的侧面。
上述抗电磁干扰元件的有源器件,从上述有源器件的上面到侧面都配置有上述抗电磁干扰元件,使上述抗电磁干扰元件将引线的上方包围起来,该引线是将上述有源器件和安装该有源器件的印刷电路板连接的导线。
若按照本发明的其他实施例,上述抗电磁干扰元件的有源器件,配置上述抗电磁干扰元件使得上述抗电磁干扰元件将引线包围起来,该引线是将上述有源器件和安装该有源器件的印刷电路板连接的导线。
若按照本发明,可以得到一种抗电磁干扰的方法,其特征在于,通过使用上述任何一种抗电磁干扰元件,以抑制从有源器件辐射的感应噪声。
从半导体器件等有源器件发出的杂散辐射噪声经过包含表面具有氧化膜的软磁粉末和有机粘接剂的复合磁性体大大地被吸收抑制了。该软磁粉末是将本来是导电物质的软磁金属变成细微的粉末、与绝缘的有机粘接剂混合后、通过使软磁金属粉末分散在有机粘接剂中而形成绝缘膜的。特别是,若软磁粉末的形状至少是扁平状和针状中的一种形状,则出现形状上的磁各向异性,根据高频区内的磁共振现象,复导磁系数增大,由此可以有效地吸收抑制不需要的辐射成分。
附图说明
图1是表示具有由本发明一个实施形态的复合磁性体构成的抗电磁干扰元件的LSI的第1实施形态的透视图。
图2是表示具有由本发明一个实施形态的复合磁性体构成的抗电磁干扰元件的LSI的第2实施形态的透视图。
图3是表示具有由本发明一个实施形态的复合磁性体构成的抗电磁干扰元件的LSI的第3实施形态的透视图。
图4是构成图1至图3所示的抗电磁干扰元件的复合磁性体的局部放大截面图。
图5是表示未装上复合磁性体的LSI(有源器件)的上面一侧电磁场强度的频率特性的图。
图6是表示如第1图所示装有抗电磁干扰元件的LSI(有源器件)的上面一侧电磁场强度的频率特性的图。
图7是表示如第2图所示装有抗电磁干扰元件的LSI(有源器件)的上面一侧电磁场强度的频率特性的图。
图8是用来说明验证构成抗电磁干扰元件的复合磁性体的特性的测试方法的图、是表示耦合电平评估系统的概略图。
图9是表示使用图8的评估系统进行特性测试的结果的图、是耦合电平频率特性的图。
具体实施方式
下面,参照附图说明实施本发明的最佳形态、即一种抗电磁干扰元件及拥有该元件的有源器件。
参照图1,图中的有源器件具有LSI1和将从其上面到侧面引线(pin)1a的上部都覆盖了的抗电磁干扰元件2。抗电磁干扰元件2由复合磁性体构成,该复合磁性体由表面具有氧化膜的软磁粉末和有机粘接剂形成。
参照图2,图中的有源器件具有LSI1和将从其上面周边部分到侧面引线(pin)1a的上部都覆盖了的抗电磁干扰元件2’。与上述情况同样,抗电磁干扰元件2’由复合磁性体构成,该复合磁性体由表面具有氧化膜的软磁粉末和有机粘接剂形成。
配置在LSI 1上面的抗电磁干扰元件2’与图1的抗电磁干扰元件2不同,其中的一部分具有开口2a,由此,使LSI1的一部分表面露出,可以不损害散热而使感应辐射噪声得到抑制。
参照图3,图中的有源器件具有LsI1和配设成将其侧面引线(pin)1a包围的抗电磁干扰元件2”。该抗电磁干扰元件2”也由复合磁性体构成,该复合磁性体由表面具有氧化膜的软磁粉末和有机粘接剂形成。这时,抗电磁干扰元件2”相对图2的抗电磁干扰元件2’具有不同的结构,即以一定的间隔形成引线1a的出口2b,该间隔可以使其与LSI1的引线1a成为非接触状态。此外,复合磁性体的表面电阻很高,为106~108Ω,故有可能使其与LSI1一体成型。
如上所述,若设置抗电磁干扰元件2、2’、2”,则各抗电磁干扰元件从LSI 1的背面和引线(pin)1a发生的高频磁场的磁通因构成各抗电磁干扰元件的复合磁性体所具有的虚导磁系数μ”而变成热并消失。结果,LSI1和安装LSI的印刷电路板以及无源元件等周围元件的感应耦合变弱,可以有效地抑制不需要的电磁波。
在此,参照图4就构成上述抗电磁干扰元件2、2’、2”的复合磁性体3进行说明。该复合磁性体3是用有机粘接剂32将表面具有氧化膜的软磁粉末31粘起来形成的。具体地说,软磁粉末31均匀地分散在有机粘接剂32中。这里,软磁粉末的形状呈扁平状或(和)针状。
作为扁平状(或针状)的软磁粉末31,有代表性的材料可以举出高频导磁系数高的铁铝硅合金(Sendust)和铁镍合金(坡莫合金)。再有,希望软磁粉末3的纵横比足够大(大约在5∶1以上)。
作为有机粘接剂32,可以举出聚酯类树脂、聚氯乙烯类树脂、聚乙烯醇缩丁醛树脂、聚氨基甲酸乙酯树脂、纤维素类树脂、腈基丁二烯橡胶、丁苯橡胶等热可塑性树脂或它们的合成物、环氧树脂、酚醛树脂、酰胺树脂、亚胺树脂等热硬化树脂等。
再有,复合磁性体3的厚度和构成材料根据有源元件的使用状态和电磁场强度等因素决定,以便实现最合适的电磁环境。
为了验证上述实施形态的抗电磁干扰元件及拥有该元件的LSI对电磁干扰的抵抗效果,以下面表1的配方调和成软磁性体膏,用刮刀片将其制成薄膜,热压后在85℃的温度下进行24小时的烘干,作成厚度1mm的第1试验材料,并对其特性进行了评估。
再有,使用振动型磁力仪和扫描电子显微镜对得到的第1试验材料进行分析后,发现容易磁化的轴和磁性粒子的取向都在各层的平面内。进而,测定其表面电阻为4×107Ω。
表1
扁平状软磁性体粉末组成:Fe-Al-Si合金平均粒径:10μm纵横比:>5 | 90个重量单位 |
有机粘接剂聚氨基甲酸乙酯树脂硬化剂(异氰酸盐化合物) | 8个重量单位2个重量单位 |
溶剂环己酮和甲苯的化合物乙基溶纤剂 | 40个重量单位65个重量单位 |
将上述第1试验材料的复合磁性体成形为图1、图2和图3所示的抗电磁干扰元件2、2’和2”的各个形状,分别装在LSI上,然后利用测试电路使LSI工作,用谱分析仪测定LSI上部的电磁场强度,确认了它的效果。
再有,对于未装上抗电磁干扰元件的状态也根据与上述相同的条件进行了测定。
图5、图6和图7表示该测定的结果。图5示出未装上抗电磁干扰元件的LSI上部电磁场强度的频率特性。图6示出装上了图1所示的抗电磁干扰元件2的LSI上部电磁场强度的频率特性。图7示出装上了图1所示的抗电磁干扰元件2’的LSI上部电磁场强度的频率特性。图6和图7的测定位置都和图5相同。
从上述结果可知,从装上了抗电磁干扰元件的LSI发出的辐射噪声大大地衰减了。
进而,在图8所示的试验装置中,对上述复合磁性体的第1试验材料的电磁耦合电平进行了测定。此外,作为比较试验材料使用了第2试验材料的35μm的铜箔。
试验装置是将电磁波场源用的振荡器5和电磁场强度测试仪(接收元件)6分别用环路直径2mm以下的电磁波发射用微型环路天线7和电磁波接收用的微型环路天线8连接起来的装置。测试是通过将电磁波发射用微型环路天线7和电磁波接收用的微型环路天线8在第1或第2试验材料9的一个面上面对面放置来进行的。再有,电磁场强度测试仪6与图中未示出的谱分析仪连接。测定值是以试验材料不存在状态下的电磁场强度为基准的。
图9示出了图8的测定结果。
与第2试验材料(35μm的铜箔)相比,由表面具有氧化膜的软磁粉末和有机粘接剂形成的复合磁性体、即第1试验材料未见到有电磁耦合电平的增大。
这样一来,通过安装使用由表面具有氧化膜的软磁粉末和有机粘接剂形成的复合磁性体构成的抗电磁干扰元件,可以有效地抑制从半导体器件等有源器件辐射出来的感应噪声。
工业上利用的可能性
如以上说明的那样,通过将由本发明的复合磁性体构成的抗电磁干扰元件安装在半导体器件等有源器件上,可以有效地抑制因电磁感应和杂散电磁波引起的相互干扰,而且因不需要占用安装空间故可以实现小型化,所以,对于以移动通信设备为首的高频电子仪器的抗电磁干扰是十分有效的。
Claims (7)
1、一种抗电磁干扰元件,能抑制从有源器件辐射的感应噪声,其特征在于,该抗电磁干扰元件由包含表面具有氧化膜的软磁粉末和有机粘接剂的复合磁性体构成;
上述表面具有氧化膜的软磁粉末呈扁平状和/或针状;
上述呈扁平状和/或针状的软磁粉末在上述复合磁性体中呈定向排列。
2、权利要求1记载的抗电磁干扰元件,其特征在于,形成使有上述有源器件表面的一部分露出的开口,用于使上述有源器件散热。
3、一种具有抗电磁干扰元件的有源器件,其特征在于,将权利要求1或权利要求2记载的任何一种抗电磁干扰元件配置在有源器件上面。
4、一种具有抗电磁干扰元件的有源器件,其特征在于,将权利要求1或权利要求2记载的任何一种抗电磁干扰元件配置在有源器件的侧面。
5、一种具有权利要求3记载的抗电磁干扰元件的有源器件,其特征在于,从上述有源器件的上面到侧面都配置有上述抗电磁干扰元件,使上述抗电磁干扰元件将引线的上方包围起来,该引线是将上述有源器件和安装该有源器件的印刷电路板连接的导线。
6、一种具有权利要求4记载的抗电磁干扰元件的有源器件,其特征在于,配置上述抗电磁干扰元件使得上述抗电磁干扰元件将引线包围起来,该引线是将上述有源器件和安装该有源器件的印刷电路板连接的导线。
7、一种抗电磁干扰的方法,其特征在于,通过使用权利要求1或权利要求2记载的任何一种抗电磁干扰元件,以抑制从有源器件辐射的感应噪声。
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JP222437/1996 | 1996-08-23 | ||
JP22243796A JP3608063B2 (ja) | 1996-08-23 | 1996-08-23 | Emi対策部品及びそれを備えた能動素子 |
JP222437/96 | 1996-08-23 |
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CN1199494A CN1199494A (zh) | 1998-11-18 |
CN1154125C true CN1154125C (zh) | 2004-06-16 |
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CNB971911215A Expired - Lifetime CN1154125C (zh) | 1996-08-23 | 1997-08-25 | 抗电磁干扰元件及拥有该元件的有源器件 |
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US (1) | US6310285B1 (zh) |
EP (1) | EP0859378B1 (zh) |
JP (1) | JP3608063B2 (zh) |
KR (1) | KR100453982B1 (zh) |
CN (1) | CN1154125C (zh) |
DE (1) | DE69719950T2 (zh) |
TW (1) | TW354843B (zh) |
WO (1) | WO1998008234A1 (zh) |
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JP2001168575A (ja) * | 1999-12-08 | 2001-06-22 | Sony Corp | 電波吸収体及びその製造方法 |
JP2001210518A (ja) * | 2000-01-24 | 2001-08-03 | Tokin Corp | 磁気損失材料とその製造方法およびそれを用いた高周波電流抑制体 |
JP2001223493A (ja) * | 2000-02-08 | 2001-08-17 | Sony Corp | 電波吸収体 |
JP2001291989A (ja) * | 2000-04-04 | 2001-10-19 | Tokin Corp | 金属筐体を備えた電子部品 |
JP4271825B2 (ja) * | 2000-04-04 | 2009-06-03 | Necトーキン株式会社 | 半導体ベアチップおよび半導体ウエーハ |
JP4398056B2 (ja) * | 2000-04-04 | 2010-01-13 | Necトーキン株式会社 | 樹脂モールド体 |
JP2002319787A (ja) | 2001-02-15 | 2002-10-31 | Sumitomo Electric Ind Ltd | 電磁波吸収材料 |
JP4883855B2 (ja) * | 2001-09-03 | 2012-02-22 | 京セラ株式会社 | 電磁波吸収体の製造方法および電磁波吸収体 |
US6906256B1 (en) * | 2002-01-22 | 2005-06-14 | Nanoset, Llc | Nanomagnetic shielding assembly |
JP2003273571A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 素子間干渉電波シールド型高周波モジュール |
JP2005128771A (ja) * | 2003-10-23 | 2005-05-19 | Fujitsu Ltd | データファイルシステム、データアクセスサーバ、およびデータアクセスプログラム |
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CN101521193A (zh) * | 2008-02-28 | 2009-09-02 | 乾坤科技股份有限公司 | 电子封装结构 |
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1996
- 1996-08-23 JP JP22243796A patent/JP3608063B2/ja not_active Expired - Lifetime
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1997
- 1997-08-25 CN CNB971911215A patent/CN1154125C/zh not_active Expired - Lifetime
- 1997-08-25 US US09/065,030 patent/US6310285B1/en not_active Expired - Lifetime
- 1997-08-25 KR KR10-1998-0702877A patent/KR100453982B1/ko not_active IP Right Cessation
- 1997-08-25 DE DE69719950T patent/DE69719950T2/de not_active Expired - Lifetime
- 1997-08-25 WO PCT/JP1997/002940 patent/WO1998008234A1/ja active IP Right Grant
- 1997-08-25 EP EP97935870A patent/EP0859378B1/en not_active Expired - Lifetime
- 1997-09-05 TW TW086112823A patent/TW354843B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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DE69719950D1 (de) | 2003-04-24 |
DE69719950T2 (de) | 2003-11-06 |
JPH1064714A (ja) | 1998-03-06 |
TW354843B (en) | 1999-03-21 |
EP0859378A4 (en) | 2000-04-12 |
KR100453982B1 (ko) | 2005-04-08 |
KR20000064288A (ko) | 2000-11-06 |
JP3608063B2 (ja) | 2005-01-05 |
EP0859378B1 (en) | 2003-03-19 |
CN1199494A (zh) | 1998-11-18 |
EP0859378A1 (en) | 1998-08-19 |
WO1998008234A1 (fr) | 1998-02-26 |
US6310285B1 (en) | 2001-10-30 |
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