CN115380369B - 半导体装置的制造装置 - Google Patents

半导体装置的制造装置

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Publication number
CN115380369B
CN115380369B CN202180026419.2A CN202180026419A CN115380369B CN 115380369 B CN115380369 B CN 115380369B CN 202180026419 A CN202180026419 A CN 202180026419A CN 115380369 B CN115380369 B CN 115380369B
Authority
CN
China
Prior art keywords
chip
target chip
distance
target
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180026419.2A
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English (en)
Chinese (zh)
Other versions
CN115380369A (zh
Inventor
瀬山耕平
清水孝寛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN115380369A publication Critical patent/CN115380369A/zh
Application granted granted Critical
Publication of CN115380369B publication Critical patent/CN115380369B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B41/00—Arrangements for controlling or monitoring lamination processes; Safety arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/028—Treatment by energy or chemical effects using vibration, e.g. sonic or ultrasonic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1132—Using vacuum directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
    • Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
  • Dicing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN202180026419.2A 2021-01-19 2021-12-13 半导体装置的制造装置 Active CN115380369B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2021/001678 2021-01-19
PCT/JP2021/001678 WO2022157830A1 (ja) 2021-01-19 2021-01-19 半導体装置の製造装置
PCT/JP2021/045830 WO2022158166A1 (ja) 2021-01-19 2021-12-13 半導体装置の製造装置

Publications (2)

Publication Number Publication Date
CN115380369A CN115380369A (zh) 2022-11-22
CN115380369B true CN115380369B (zh) 2025-09-12

Family

ID=82549593

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180026419.2A Active CN115380369B (zh) 2021-01-19 2021-12-13 半导体装置的制造装置

Country Status (6)

Country Link
US (1) US12131921B2 (https=)
JP (1) JP7523823B2 (https=)
KR (1) KR102891252B1 (https=)
CN (1) CN115380369B (https=)
TW (2) TW202230595A (https=)
WO (2) WO2022157830A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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KR20250105390A (ko) * 2022-10-27 2025-07-08 도쿄엘렉트론가부시키가이샤 옮겨 싣기 장치, 기판 처리 장치, 옮겨 싣기 방법 및 기판 처리 방법
KR20250105403A (ko) * 2022-12-06 2025-07-08 파나소닉 아이피 매니지먼트 가부시키가이샤 픽업 시스템 및 픽업 방법
TW202507896A (zh) * 2023-08-03 2025-02-16 日商松下知識產權經營股份有限公司 拾取系統、接合裝置、分類裝置及拾取方法
TW202520412A (zh) * 2023-10-12 2025-05-16 日商松下知識產權經營股份有限公司 拾取系統、接合裝置、分類裝置及控制方法
JP2025095916A (ja) * 2023-12-15 2025-06-26 ヤマハロボティクスホールディングス株式会社 半導体装置の製造装置および半導体装置の製造方法
WO2025243968A1 (ja) * 2024-05-22 2025-11-27 パナソニックＩｐマネジメント株式会社 接合装置および制御方法

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KR20140064255A (ko) * 2012-11-20 2014-05-28 한미반도체 주식회사 전자부품 실장장치 및 이의 인포지션 판정 방법
KR20190009742A (ko) * 2017-06-12 2019-01-29 유니카르타, 인크. 개별 부품들의 기판 상으로의 병렬적 조립
KR20190131311A (ko) * 2018-05-16 2019-11-26 (주)포인트엔지니어링 마이크로 led 흡착체
KR20210000438A (ko) * 2019-06-25 2021-01-05 세메스 주식회사 반도체 소자들을 픽업하기 위한 장치 및 방법

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JP3526802B2 (ja) * 2000-01-21 2004-05-17 旭化成ケミカルズ株式会社 半導体ウエハー固定用の粘着剤ならびに加工方法
JP2004072037A (ja) * 2002-08-09 2004-03-04 Renesas Technology Corp 半導体装置の製造方法
JP4704017B2 (ja) 2004-12-09 2011-06-15 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2006324373A (ja) * 2005-05-18 2006-11-30 Matsushita Electric Ind Co Ltd チップのピックアップ装置およびピックアップ方法
JP4624931B2 (ja) * 2006-01-19 2011-02-02 キヤノンマシナリー株式会社 ピックアップ装置及びピックアップ方法
JP2008130742A (ja) 2006-11-20 2008-06-05 Sekisui Chem Co Ltd 半導体チップの製造方法
JP5847410B2 (ja) * 2011-03-22 2016-01-20 ファスフォードテクノロジ株式会社 ダイボンダ及び半導体製造方法
TWI553721B (zh) * 2012-12-26 2016-10-11 日立化成股份有限公司 擴展方法、以及半導體裝置的製造方法
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TWI744850B (zh) * 2019-04-15 2021-11-01 日商新川股份有限公司 封裝裝置
TWI747225B (zh) 2019-04-15 2021-11-21 日商新川股份有限公司 搬送裝置
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KR20140064255A (ko) * 2012-11-20 2014-05-28 한미반도체 주식회사 전자부품 실장장치 및 이의 인포지션 판정 방법
KR20190009742A (ko) * 2017-06-12 2019-01-29 유니카르타, 인크. 개별 부품들의 기판 상으로의 병렬적 조립
KR20190131311A (ko) * 2018-05-16 2019-11-26 (주)포인트엔지니어링 마이크로 led 흡착체
KR20210000438A (ko) * 2019-06-25 2021-01-05 세메스 주식회사 반도체 소자들을 픽업하기 위한 장치 및 방법

Also Published As

Publication number Publication date
TW202329297A (zh) 2023-07-16
WO2022157830A1 (ja) 2022-07-28
TW202230595A (zh) 2022-08-01
US20230352324A1 (en) 2023-11-02
WO2022158166A1 (ja) 2022-07-28
JPWO2022158166A1 (https=) 2022-07-28
US12131921B2 (en) 2024-10-29
TWI828355B (zh) 2024-01-01
JP7523823B2 (ja) 2024-07-29
KR102891252B1 (ko) 2025-12-03
KR20230129542A (ko) 2023-09-08
CN115380369A (zh) 2022-11-22

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