JP7523823B2 - 半導体装置の製造装置 - Google Patents

半導体装置の製造装置 Download PDF

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Publication number
JP7523823B2
JP7523823B2 JP2022577031A JP2022577031A JP7523823B2 JP 7523823 B2 JP7523823 B2 JP 7523823B2 JP 2022577031 A JP2022577031 A JP 2022577031A JP 2022577031 A JP2022577031 A JP 2022577031A JP 7523823 B2 JP7523823 B2 JP 7523823B2
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target chip
head
distance
chip
target
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Japanese (ja)
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JPWO2022158166A1 (https=
Inventor
耕平 瀬山
孝寛 清水
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Shinkawa Ltd
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Shinkawa Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B41/00—Arrangements for controlling or monitoring lamination processes; Safety arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/028—Treatment by energy or chemical effects using vibration, e.g. sonic or ultrasonic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1132—Using vacuum directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
    • Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
  • Dicing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2022577031A 2021-01-19 2021-12-13 半導体装置の製造装置 Active JP7523823B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2021/001678 2021-01-19
PCT/JP2021/001678 WO2022157830A1 (ja) 2021-01-19 2021-01-19 半導体装置の製造装置
PCT/JP2021/045830 WO2022158166A1 (ja) 2021-01-19 2021-12-13 半導体装置の製造装置

Publications (2)

Publication Number Publication Date
JPWO2022158166A1 JPWO2022158166A1 (https=) 2022-07-28
JP7523823B2 true JP7523823B2 (ja) 2024-07-29

Family

ID=82549593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022577031A Active JP7523823B2 (ja) 2021-01-19 2021-12-13 半導体装置の製造装置

Country Status (6)

Country Link
US (1) US12131921B2 (https=)
JP (1) JP7523823B2 (https=)
KR (1) KR102891252B1 (https=)
CN (1) CN115380369B (https=)
TW (2) TW202230595A (https=)
WO (2) WO2022157830A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250105390A (ko) * 2022-10-27 2025-07-08 도쿄엘렉트론가부시키가이샤 옮겨 싣기 장치, 기판 처리 장치, 옮겨 싣기 방법 및 기판 처리 방법
KR20250105403A (ko) * 2022-12-06 2025-07-08 파나소닉 아이피 매니지먼트 가부시키가이샤 픽업 시스템 및 픽업 방법
TW202507896A (zh) * 2023-08-03 2025-02-16 日商松下知識產權經營股份有限公司 拾取系統、接合裝置、分類裝置及拾取方法
TW202520412A (zh) * 2023-10-12 2025-05-16 日商松下知識產權經營股份有限公司 拾取系統、接合裝置、分類裝置及控制方法
JP2025095916A (ja) * 2023-12-15 2025-06-26 ヤマハロボティクスホールディングス株式会社 半導体装置の製造装置および半導体装置の製造方法
WO2025243968A1 (ja) * 2024-05-22 2025-11-27 パナソニックＩｐマネジメント株式会社 接合装置および制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006160935A (ja) 2004-12-09 2006-06-22 Nitto Denko Corp 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2007194433A (ja) 2006-01-19 2007-08-02 Canon Machinery Inc ピックアップ装置及びピックアップ方法
WO2018061107A1 (ja) 2016-09-28 2018-04-05 富士機械製造株式会社 ダイ実装装置
WO2020213566A1 (ja) 2019-04-15 2020-10-22 株式会社新川 搬送装置
WO2020213567A1 (ja) 2019-04-15 2020-10-22 株式会社新川 実装装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0272638A (ja) * 1988-09-07 1990-03-12 Seiko Epson Corp 半導体装置の製造方法
JP3526802B2 (ja) * 2000-01-21 2004-05-17 旭化成ケミカルズ株式会社 半導体ウエハー固定用の粘着剤ならびに加工方法
JP2004072037A (ja) * 2002-08-09 2004-03-04 Renesas Technology Corp 半導体装置の製造方法
JP2006324373A (ja) * 2005-05-18 2006-11-30 Matsushita Electric Ind Co Ltd チップのピックアップ装置およびピックアップ方法
JP2008130742A (ja) 2006-11-20 2008-06-05 Sekisui Chem Co Ltd 半導体チップの製造方法
JP5847410B2 (ja) * 2011-03-22 2016-01-20 ファスフォードテクノロジ株式会社 ダイボンダ及び半導体製造方法
KR20140064255A (ko) * 2012-11-20 2014-05-28 한미반도체 주식회사 전자부품 실장장치 및 이의 인포지션 판정 방법
TWI553721B (zh) * 2012-12-26 2016-10-11 日立化成股份有限公司 擴展方法、以及半導體裝置的製造方法
US9437468B2 (en) * 2014-03-29 2016-09-06 Intel Corporation Heat assisted handling of highly warped substrates post temporary bonding
DE102014111744B4 (de) * 2014-08-18 2022-01-05 Infineon Technologies Ag Baugruppe zum handhaben eines halbleiterchips und verfahren zum handhaben eines halbleiterchips
JP6418360B1 (ja) * 2017-03-17 2018-11-07 住友ベークライト株式会社 粘着テープセットおよび半導体素子移送用粘着テープ
JP6720333B2 (ja) * 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
KR20190131311A (ko) * 2018-05-16 2019-11-26 (주)포인트엔지니어링 마이크로 led 흡착체
KR102361476B1 (ko) * 2019-06-25 2022-02-10 세메스 주식회사 반도체 소자들을 픽업하기 위한 장치 및 방법
US11056377B2 (en) * 2019-07-02 2021-07-06 Asm Technology Singapore Pte Ltd Collet inspection in a semiconductor pick and place apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006160935A (ja) 2004-12-09 2006-06-22 Nitto Denko Corp 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2007194433A (ja) 2006-01-19 2007-08-02 Canon Machinery Inc ピックアップ装置及びピックアップ方法
WO2018061107A1 (ja) 2016-09-28 2018-04-05 富士機械製造株式会社 ダイ実装装置
WO2020213566A1 (ja) 2019-04-15 2020-10-22 株式会社新川 搬送装置
WO2020213567A1 (ja) 2019-04-15 2020-10-22 株式会社新川 実装装置

Also Published As

Publication number Publication date
TW202329297A (zh) 2023-07-16
WO2022157830A1 (ja) 2022-07-28
TW202230595A (zh) 2022-08-01
US20230352324A1 (en) 2023-11-02
WO2022158166A1 (ja) 2022-07-28
JPWO2022158166A1 (https=) 2022-07-28
US12131921B2 (en) 2024-10-29
TWI828355B (zh) 2024-01-01
KR102891252B1 (ko) 2025-12-03
CN115380369B (zh) 2025-09-12
KR20230129542A (ko) 2023-09-08
CN115380369A (zh) 2022-11-22

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