CN110620081A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN110620081A
CN110620081A CN201910499815.1A CN201910499815A CN110620081A CN 110620081 A CN110620081 A CN 110620081A CN 201910499815 A CN201910499815 A CN 201910499815A CN 110620081 A CN110620081 A CN 110620081A
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support table
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木内逸人
山本敬祐
木村泰一朗
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Disco Corp
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Abstract

提供晶片的加工方法，在对晶片的背面进行加工时，不会使器件的生产率、品质下降。该晶片的加工方法包含如下的工序：晶片配设工序，在上表面形成为平坦的支承工作台(40)的上表面上敷设尺寸大于或等于晶片(10)的形状的聚烯烃类片材(20)或聚酯类片材(20)中的任意片材，将晶片(10)的正面(10a)定位于片材(20)的上表面(20a)而进行配设；片材热压接工序，在密闭环境内对隔着片材(20)配设在支承工作台(40)上的晶片(10)进行减压并对片材(20)进行加热，按压晶片(10)而将晶片(10)压接于片材(20)，并且在晶片(10)的外周形成围绕晶片(10)的鼓出部(22)；背面加工工序，对晶片(10)的背面(10b)实施加工；以及剥离工序，将晶片(10)从片材(20)剥离。

Description

晶片的加工方法
技术领域
本发明涉及对晶片的背面进行加工的晶片的加工方法。
背景技术
由互相交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片在通过磨削装置对背面进行磨削而加工成规定的厚度之后，通过切割装置(划片机)分割成各个器件芯片，分割得到的器件芯片被应用于移动电话、个人计算机等电子设备。
磨削装置包含：卡盘工作台，其具有对晶片进行保持的保持面；磨削单元，其以能够旋转的方式具有对保持于该卡盘工作台的晶片的上表面进行磨削的磨削磨轮；以及进给构件，其对磨削磨具进行磨削进给，该磨削装置能够将晶片磨削成期望的厚度(例如，参照专利文献1)。
专利文献1：日本特开2005-246491号公报
在通过磨削装置对晶片的背面进行磨削时，有时在晶片的正面侧粘贴具有粘合层的保护带，以使得形成于晶片的正面的多个器件不会因卡盘工作台的保持面与晶片的正面的接触而刮伤。但是，存在如下的问题：当在晶片的正面配设保护带并载置在卡盘工作台上而通过磨削装置进行磨削时，会在磨削进给方向(上下方向)和水平方向上施加较强的负荷，晶片相对于配置在晶片的正面的保护带发生偏移而损伤晶片。
特别是在形成于晶片的正面的器件上形成有多个被称为凸块的突起电极的情况下，晶片的正面与保护带之间的接触面积比较小，晶片未被保护带稳定地支承，容易产生上述问题。
此外，在磨削结束而将保护带从晶片的正面剥离时，还存在粘贴保护带时使用的胶料、蜡等附着并残留于该凸块而使器件的品质下降的问题，通过追加将这些胶料、蜡等去除的工序，会导致生产率也下降。另外，还提出了代替保护带而在晶片的正面涂布液态树脂，形成树脂层而对晶片的正面进行保护的方案，但将液态树脂从晶片的正面完全去除要花费工夫，在器件的品质、生产率上仍然会产生问题。
发明内容
因此，本发明的目的在于提供晶片的加工方法，在对晶片的背面进行加工时不会使器件的生产率、品质下降。
根据本发明，提供晶片的加工方法，对由互相交叉的多条分割预定线划分而在正面形成有多个器件的晶片的背面进行加工，其中，该晶片的加工方法具有如下的工序：晶片配设工序，在上表面形成为平坦的支承工作台的该上表面上敷设尺寸大于或等于晶片的形状的聚烯烃类片材或聚酯类片材中的任意片材，将晶片的正面定位于该片材的上表面而进行配设；片材热压接工序，在实施了该晶片配设工序之后，在密闭环境内对隔着该片材配设在该支承工作台上的晶片进行减压并对该片材进行加热，按压晶片而将晶片压接于该片材，并且在该晶片的外周形成围绕该晶片的鼓出部；背面加工工序，在实施了该片材热压接工序之后，对晶片的背面实施加工；以及剥离工序，在实施了该背面加工工序之后，将晶片从该片材剥离。
优选该支承工作台包含加热构件，在该片材热压接工序中，利用该加热构件对该支承工作台进行加热。另外，优选该支承工作台的上表面被氟树脂包覆。优选在该背面加工工序中，实施对晶片的背面进行磨削的磨削加工。
优选在选择聚烯烃类的片材作为该片材的情况下，该片材热压接工序中的该片材的加热温度在该片材由聚乙烯片材构成的情况下为120℃～140℃，在该片材由聚丙烯片材构成的情况下为160℃～180℃，在该片材由聚苯乙烯片材构成的情况下为220℃～240℃。
优选该聚酯类的片材由聚对苯二甲酸乙二醇酯片材和聚萘二甲酸乙二醇酯片材中的任意片材构成。优选在选择聚酯类的片材作为该片材的情况下，该片材热压接工序中的该片材的加热温度在该片材由聚对苯二甲酸乙二醇酯片材构成的情况下为250℃～270℃，在该片材由聚萘二甲酸乙二醇酯片材构成的情况下为160℃～180℃。
根据本发明，晶片被片材以充分的支承力支承，即使对晶片的背面实施加工，晶片也不会破损。另外，即使在器件的正面上形成有多个凸块的情况下，也能将该凸块埋设到片材中而可靠地进行支承，背面加工工序时的应力分散而解决了晶片破损的问题。
此外，根据本发明的加工方法，由于通过将晶片热压接于该片材而进行一体化，因此在背面加工工序结束之后，即使将该片材从晶片的背面剥离，也不会产生胶料、蜡、液态树脂等残留于凸块的问题，解决了器件的品质下降的问题。
附图说明
图1的(a)和(b)是示出晶片配设工序的实施方式的分解立体图。
图2的(a)、(b)和(c)是示出片材热压接工序的实施方式的侧视图。
图3是通过图2所示的片材热压接工序得到的一体化单元的侧视图和局部放大剖视图。
图4的(a)和(b)是示出本实施方式的背面加工工序的实施方式的立体图。
图5的(a)和(b)是示出剥离工序的立体图。
图6的(a)是示出片材热压接工序的其他实施方式的立体图，图6的(b)是示出片材热压接工序的其他实施方式的局部放大剖视图。
标号说明
10：晶片；12：器件；14：分割预定线；16：凸块；20：片材；22：鼓出部；40：支承工作台；42：电加热器；50：基台；52：吸引孔；60：热压接装置；62：密闭罩部件；64：按压部件；64a：按压板；70：磨削装置；71：卡盘工作台；72：磨削单元；74：旋转主轴；78：磨削磨轮；80：剥离用卡盘工作台；100：膜状部件；110：辊。
具体实施方式
以下，参照附图来详细说明基于本发明而构成的对晶片的背面进行加工的加工方法的实施方式。
在实施本实施方式的晶片的加工方法时，首先，如图1的(a)所示，准备作为被加工物的晶片10和片材20。在晶片10的正面10a上通过分割预定线14划分而形成有多个器件12。片材20至少设定为大于或等于晶片10的形状的尺寸，由聚烯烃类片材或聚酯类片材构成。在本实施方式中，选择了聚烯烃类的聚乙烯(PE)片材作为片材20。
(晶片配设工序)
若准备了晶片10和片材20，则如图1的(a)所示，使晶片10的背面10b朝向上方(即，使正面10a朝向下方)而配设在敷设于支承工作台40的上表面的片材20的上表面20a上(参照图1的(b))。支承工作台40配设在基台50上，支承工作台40的上表面形成为平坦，被氟树脂包覆。
(片材热压接工序)
若实施了上述晶片配设工序，则实施图2所示的片材热压接工序。片材热压接工序是如下的工序：在密闭环境内对配设于片材20的晶片10进行减压并对片材20进行加热，并且按压晶片10而将晶片10和片材20热压接。另外，在支承工作台40的内部内置有电加热器42和未图示的温度传感器作为加热构件。电加热器42和该温度传感器与未图示的控制装置和电源连接，能够将支承工作台40调整为期望的温度。以下进行具体说明。
为了实施片材热压接工序，使用图2的(a)所示的热压接装置60。热压接装置60具有用于形成包含支承工作台40在内的密闭环境的密闭罩部件62。另外，图2是热压接装置60的侧视图，但为了便于说明内部结构，仅示出了密闭罩部件62的截面。密闭罩部件62是覆盖基台50的整个上表面的箱型部件，由上壁62a和从上壁62a的外周端部垂下的侧壁62b构成，下方侧是开放的。在上壁62a的中央形成有用于供按压部件64的支承轴64a贯通并沿上下方向进退的开口62c。另外，为了使支承轴64a上下进退并且将密闭罩部件62的内部空间S与外部隔断而成为密闭环境，在对支承轴64a的外周进行支承的开口部62c形成密封构造62d。在支承轴64a的下端配设有按压板64b。按压板64b是直径至少比晶片10大(优选设定为比支承工作台40稍大的尺寸)的圆盘形状。在密闭罩部件62的侧壁62b的下端面沿整个周向配设有弹性密封部件62e。另外，虽然省略了图示，但在按压部件64的上方配设有用于使按压部件64沿上下方向进退的驱动构件。
若在支承工作台40上隔着片材20载置了晶片10，则使如图2的(a)所示那样定位在基台50上的密闭罩部件62下降而载置在基台50上。此时，如图2的(b)所示，按压板64b被提拉到不与晶片10的上表面接触的上方位置。当密闭罩部件62载置在基台50上时，配设在侧壁62b的下端面的弹性密封部件62e与基台50的上表面紧贴。在基台50的支承工作台40的附近位置配设有吸引孔52，由密闭罩部件62形成的内部空间S经由吸引孔52而与未图示的吸引构件连接。
若如图2的(b)所示那样将密闭罩部件62载置在基台50上而使密闭罩部件62的内部空间S为密闭环境，则使该吸引构件工作而经由吸引孔52对内部空间S的空气进行吸引，将包含晶片10的区域减压到接近真空的状态。与此同时，使电加热器42工作而对支承着晶片10的片材20进行加热。使支承工作台40的电加热器42工作并通过未图示的温度传感器对支承工作台40的温度进行控制，从而将构成片材20的聚乙烯片材加热到熔点附近的温度(120℃～140℃)。此外，在对片材20进行加热的同时，如图2的(c)所示，使按压板64b下降而以均匀的力对晶片10的整个上表面进行按压。收纳有晶片10的内部空间S被减压到接近真空的状态，残留在晶片10与片材20之间的空气被吸引而去除。然后，片材20因被加热到上述温度而软化，粘合性增强，将片材20和晶片10热压接而形成一体化单元W。通过以上，完成片材热压接工序。若像这样完成了片材热压接工序，则使未图示的吸引构件和电加热器42停止，使按压板64b上升并且将密闭罩部件62向上方提拉。若片材20的温度下降到常温附近，则可以将一体化单元W从支承工作台40搬出。在本实施方式中，由于在支承工作台40的上表面包覆有氟树脂，因此即使是粘合性通过加热而增强的片材20，也容易从支承工作台40剥离。
参照图3对通过实施上述片材热压接工序而形成的一体化单元W进一步进行说明。如上述那样，根据片材热压接工序，在密闭环境内进行了减压的状态下对片材20进行加热，在片材20发生了软化的状态下按压晶片10而使晶片10与片材20紧贴，因此晶片10不是经由胶料、蜡等而是被片材20以充分的支承力支承。此外，即使在形成于晶片10的正面10a的器件12上形成有多个凸块16的情况下，也能将空气从该凸块16的附近完全吸引而去除，如图中对一体化单元W的端部的截面进行放大而示出的那样，凸块16埋设并紧贴于被加热而软化的状态的片材20中而一体化。并且，由于片材20以大于或等于晶片10的形状的尺寸形成，所以片材20的外周鼓出，形成从外侧围绕晶片10的外周10c的鼓出部22。
(背面加工工序)
若实施了上述片材热压接工序，则实施背面加工工序，对作为一体化单元W的晶片10的背面10b实施磨削加工。以下，对背面加工工序进行具体说明。
如图4的(a)所示，将通过片材热压接工序而得到的一体化单元W搬送到实施磨削加工的磨削装置70(仅示出了一部分)中，使片材20侧向下而载置在磨削装置70所具有的卡盘工作台71的吸附卡盘71a上。吸附卡盘71a由具有通气性的多孔陶瓷构成，通过使与卡盘工作台71连接的未图示的吸引构件工作而将一体化单元W吸引保持在卡盘工作台71上。
若将一体化单元W吸引保持于卡盘工作台71上，则通过图4的(b)所示的磨削装置70对晶片10的背面10b进行磨削。磨削装置70具有磨削单元72，该磨削单元72用于对以一体化单元W的形式吸引保持在卡盘工作台71上的晶片10的背面10b进行磨削而使晶片10薄化。磨削单元72具有：旋转主轴74，其通过未图示的旋转驱动机构进行旋转；安装座76，其安装于旋转主轴74的下端；以及磨削磨轮78，其安装于安装座76的下表面，在磨削磨轮78的下表面呈环状配设有磨削磨具78a。
若将晶片10吸引保持在卡盘工作台71上，则一边使磨削单元72的旋转主轴74沿图4的(b)中箭头R1所示的方向例如按照6000rpm进行旋转，一边使卡盘工作台71沿图4的(b)中箭头R2所示的方向例如按照300rpm进行旋转。然后，使磨削磨具78a与晶片10的背面10b接触，将磨削磨轮78例如按照1μm/秒的磨削进给速度向下方(即，与卡盘工作台71垂直的方向)进行磨削进给。此时，能够一边通过未图示的接触式的测量仪对晶片10的厚度进行测量一边进行磨削，对晶片10的背面10b进行磨削而使晶片10为规定的厚度(例如50μm)，背面加工工序完成。
(剥离工序)
若完成了上述背面加工工序，则实施剥离工序，将晶片10从片材20剥离。以下对剥离工序的实施过程进行说明。
将通过背面加工工序磨削而薄化的晶片10与片材20一起从磨削装置70的卡盘工作台71搬出。从卡盘工作台71搬出的晶片10被搬送到图5的(a)所示的剥离用卡盘工作台80。如图所示，使晶片10和片材20上下翻转而使片材20的背面20b朝向上方(即，使晶片10的背面10b朝向下方)而载置在剥离用卡盘工作台80的吸附卡盘80a上。另外，剥离用卡盘工作台80具有与上述磨削装置70的卡盘工作台71同样的结构，但磨削装置70的吸附卡盘71a被设定为与片材20同等的直径，与此相对，剥离用卡盘工作台80的吸附卡盘80a被设定为与晶片10相同的直径。
若通过使未图示的吸引构件工作而将晶片10吸引保持于剥离用卡盘工作台80，则如图5的(b)所示，将片材20从晶片10剥离。另外，由于从聚烯烃类片材或聚酯类片材中选择片材20，因此能够使片材20在从晶片10剥离时弯曲，是有利的。另外，在实施剥离工序时，如果对片材20进行加热，则片材20会发生软化，因此能够更容易地剥离。
在上述说明中，在将片材20从晶片10剥离时，对片材20进行了加热，但也存在通过冷却使片材20的粘合力下降的情况，也可以在对片材20进行冷却之后实施剥离工序。在实施剥离工序时，关于对片材20进行加热还是进行冷却，只要根据构成片材20的原材料的特性来选择即可。
根据本实施方式，晶片10通过实施片材热压接工序而被片材20以充分的支承力支承，在片材20的外周形成有围绕晶片10的外周部10c的鼓出部22，因此，在对晶片10实施磨削加工时晶片10被稳定地支承，即使对晶片10的背面10b实施磨削加工，也能防止晶片破损。另外，即使在形成于晶片10的正面10a的器件12上形成有多个凸块的情况下，晶片10的正面10a与片材20之间的空气也被吸引而去除，并且凸块埋设到因加热而软化的片材20中，晶片10整体被均匀地支承，因此磨削时的应力分散而防止了晶片10和凸块破损。此外，在本实施方式中，通过热压接来使片材20支承晶片10，在片材20与晶片10之间未夹设液态树脂、胶料、蜡等。由此，即使将晶片10从片材20剥离，在器件12上也不会残留液态树脂、胶料、蜡等，不会出现器件12的品质下降的问题。
另外，在上述实施方式中，通过聚乙烯片材来构成片材20，但本发明并不限定于此。作为不需要液态树脂、胶料、蜡等便能够支承晶片10的片材20，可以从聚烯烃类片材、聚酯类片材中适当选择。作为聚烯烃类片材，除了上述聚乙烯片材之外，例如可以选择聚丙烯(PP)片材、聚苯乙烯(PS)片材。另外，作为聚酯类片材，例如可以选择聚对苯二甲酸乙二醇酯(PET)片材、聚萘二甲酸乙二醇酯(PEN)片材。
在上述实施方式中，将在片材热压接工序中对片材20进行加热时的温度设定为聚乙烯片材的熔点附近的温度(120℃～140℃)，但如上所述，在选择其他片材构成片材20的情况下，优选以所选择的片材的原材料的熔点附近的温度进行加热。例如，在片材20由聚丙烯片材构成的情况下，优选将加热时的温度设为160℃～180℃，在片材20由聚苯乙烯片材构成的情况下，优选将加热时的温度设为220℃～240℃。另外，在片材20由聚对苯二甲酸乙二醇酯片材构成的情况下，优选将加热时的温度设为250℃～270℃，在片材20由聚萘二甲酸乙二醇酯片材构成的情况下，优选将加热时的温度设定为160℃～180℃。
另外，在上述实施方式中，通过密闭罩部件62来形成密闭环境，但本发明并不限定于此。例如，如图6的(a)所示，可以将晶片10与片材20一起保持于具有比片材20大的吸附卡盘91的卡盘工作台90上，将吸附卡盘91的整个上表面用膜状部件100覆盖，通过从吸附卡盘91作用负压Vm而使包含晶片10在内的膜状部件100的内侧为密闭环境，从而能够对该密闭环境内的空间进行减压。然后，也可以如图6的(b)中局部放大剖视图所示，通过具有未图示的加热构件的辊110将片材20加热到期望的温度，并且从膜状部件100的上方对晶片10的整个背面10b进行按压，从而实施本发明的片材热压接工序。
在上述实施方式中，以将本发明的背面加工工序应用于对晶片的背面进行磨削的磨削加工为例来进行说明，但本发明并不限定于此，也可以将本发明的背面加工工序应用于对晶片的背面进行研磨的研磨加工，能够起到与上述实施方式同样的作用效果。

Claims (8)

1.一种晶片的加工方法，对由互相交叉的多条分割预定线划分而在正面形成有多个器件的晶片的背面进行加工，其中，该晶片的加工方法具有如下的工序：
晶片配设工序，在上表面形成为平坦的支承工作台的该上表面上敷设尺寸大于或等于晶片的形状的聚烯烃类片材或聚酯类片材中的任意片材，将晶片的正面定位于该片材的上表面而进行配设；
片材热压接工序，在实施了该晶片配设工序之后，在密闭环境内对隔着该片材配设在该支承工作台上的晶片进行减压并对该片材进行加热，按压晶片而将晶片压接于该片材，并且在该晶片的外周形成围绕该晶片的鼓出部；
背面加工工序，在实施了该片材热压接工序之后，对晶片的背面实施加工；以及
剥离工序，在实施了该背面加工工序之后，将晶片从该片材剥离。
2.根据权利要求1所述的晶片的加工方法，其中，
该支承工作台包含加热构件，在该片材热压接工序中，利用该加热构件对该支承工作台进行加热。
3.根据权利要求1或2所述的晶片的加工方法，其中，
该支承工作台的上表面被氟树脂包覆。
4.根据权利要求1所述的晶片的加工方法，其中，
在该背面加工工序中，实施对晶片的背面进行磨削的磨削加工。
5.根据权利要求1所述的晶片的加工方法，其中，
该聚烯烃类的片材选自由聚乙烯片材、聚丙烯片材以及聚苯乙烯片材组成的组。
6.根据权利要求5所述的晶片的加工方法，其中，
在选择聚烯烃类的片材作为该片材的情况下，该片材热压接工序中的该片材的加热温度在该片材由聚乙烯片材构成的情况下为120℃～140℃，在该片材由聚丙烯片材构成的情况下为160℃～180℃，在该片材由聚苯乙烯片材构成的情况下为220℃～240℃。
7.根据权利要求1所述的晶片的加工方法，其中，
该聚酯类的片材选自由聚对苯二甲酸乙二醇酯片材和聚萘二甲酸乙二醇酯片材组成的组。
8.根据权利要求7所述的晶片的加工方法，其中，
在选择聚酯类的片材作为该片材的情况下，该片材热压接工序中的该片材的加热温度在该片材由聚对苯二甲酸乙二醇酯片材构成的情况下为250℃～270℃，在该片材由聚萘二甲酸乙二醇酯片材构成的情况下为160℃～180℃。
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