CN110783249B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

Info

Publication number
CN110783249B
CN110783249B CN201910613278.9A CN201910613278A CN110783249B CN 110783249 B CN110783249 B CN 110783249B CN 201910613278 A CN201910613278 A CN 201910613278A CN 110783249 B CN110783249 B CN 110783249B
Authority
CN
China
Prior art keywords
wafer
sheet
substrate
dividing
thermocompression bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910613278.9A
Other languages
English (en)
Other versions
CN110783249A (zh
Inventor
原田成规
冈村卓
赵金艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN110783249A publication Critical patent/CN110783249A/zh
Application granted granted Critical
Publication of CN110783249B publication Critical patent/CN110783249B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/10—Homopolymers or copolymers of propene
    • C08J2323/12—Polypropene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2325/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
    • C08J2325/02—Homopolymers or copolymers of hydrocarbons
    • C08J2325/04—Homopolymers or copolymers of styrene
    • C08J2325/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2367/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

提供晶片的加工方法，在将晶片分割成各个器件芯片时，不会使器件的品质降低。该晶片的加工方法将由相互交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法包含如下的工序：晶片配设工序，在对晶片进行支承的基质的上表面上敷设聚烯烃系片或聚酯系片中的任意的片，将晶片的背面定位在片的上表面上而进行配设；片热压接工序，在密闭环境内对隔着片而配设于基质的晶片进行减压并对片进行加热，并且按压晶片，从而隔着片将晶片热压接在基质上；以及分割工序，将切削刀具定位于晶片的正面而对分割预定线进行切削，从而将晶片分割成各个器件芯片。

Description

晶片的加工方法
技术领域
本发明涉及晶片的加工方法，将由相互交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片。
背景技术
由相互交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片在通过磨削装置对背面进行磨削而加工成规定的厚度之后，通过切割装置被分割成各个器件芯片，分割得到的器件芯片被用于移动电话、个人计算机等电子设备。
在将晶片分割成各个器件芯片时，在晶片的背面上粘贴划片带，并且通过具有对晶片进行收纳的开口的环状框架进行支承，从而即使将晶片分割成各个器件芯片，也能够在维持晶片的形态的状态下搬送至下一工序(例如，参照专利文献1)。
专利文献1：日本特开2010-050214号公报
如上所述，在将晶片分割成各个器件芯片时，借助划片带而通过环状框架进行支承，从而能够将分割后的晶片在维持晶片的形态的状态下搬送至下一工序，但是当实施利用切削刀具对晶片的分割预定线进行切削的切割时，存在如下的问题：在粘贴于划片带的背面侧产生缺损而使器件芯片的品质降低。
据认为上述问题的原因如下：形成于划片带的正面的粘接层比较柔软，因此在分割时器件芯片移动而产生与切削刀具的异常接触，另外，对晶片进行吸引保持的卡盘工作台的保持部由具有通气性的多孔陶瓷形成，因此划片带被卡盘工作台的保持部吸引，从而分割得到的器件芯片的外周部的保持力降低而产生与切削刀具的异常接触。
据认为若将晶片的背面支承于具有刚性的基质(支承板)而进行切割，则能够解决上述问题。但是，基质本身不具有粘接性，因此需要借助液态树脂、蜡、涂布有糊料剂等的带等而与晶片进行一体化。在该情况下，会产生如下新的问题：在切割结束而将基质从晶片的背面剥离时，在各个器件芯片上残留液态树脂、蜡、形成于带的糊料剂等而使器件芯片的品质降低。
发明内容
由此，本发明的目的在于提供晶片的加工方法，在将晶片分割成各个器件芯片时，不会使器件芯片的品质降低。
根据本发明，提供晶片的加工方法，将由相互交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法具有如下的工序：晶片配设工序，在对晶片进行支承的基质的上表面上敷设聚烯烃系片或聚酯系片中的任意的片，将晶片的背面定位在该片的上表面上而进行配设；片热压接工序，在密闭环境内对隔着该片而配设于该基质的晶片进行减压并对该片进行加热，并且将晶片向该片按压，从而隔着该片将晶片热压接在该基质上；分割工序，在实施了该片热压接工序之后，将切削刀具定位于晶片的正面而对分割预定线进行切削，从而将晶片分割成各个器件芯片；以及剥离工序，在实施了该分割工序之后，将该片和该基质从晶片的背面剥离。
优选该聚烯烃系片由聚乙烯片、聚丙烯片、聚苯乙烯片中的任意的片构成。关于在选择了聚烯烃系片作为该片的情况下的该片热压接工序中的该片的加热温度，在该片由聚乙烯片构成的情况下，优选该加热温度为120℃～140℃，在该片由聚丙烯片构成的情况下，优选该加热温度为160℃～180℃，在该片由聚苯乙烯片构成的情况下，优选该加热温度为220℃～240℃。
优选该聚酯系片由聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意的片构成。关于在选择了聚酯系片作为该片的情况下的该片热压接工序中的该片的加热温度，在该片由聚对苯二甲酸乙二醇酯片构成的情况下，优选该加热温度为250℃～270℃，在该片由聚萘二甲酸乙二醇酯片构成的情况下，优选该加热温度为160℃～180℃。
根据本发明，晶片以充分的保持力被保持于基质，即使利用切削刀具对形成于晶片的正面的分割预定线进行切削，也能够抑制在器件芯片的背面上产生缺损。另外，隔着片将晶片热压接在基质上，因此即使基于切削刀具的分割工序结束而将基质从晶片的背面剥离，也不会附着液态树脂、糊料剂、蜡等，克服了使器件的品质降低的问题。
附图说明
图1的(a)、(b)是示出晶片配设工序的实施方式的立体图。
图2的(a)～(c)是依次示出片热压接工序的实施方式的局部剖视侧视图。
图3是通过图2所示的片热压接工序得到的一体化单元的侧视图。
图4是示出将通过图3的片热压接工序得到的一体化单元保持于切削装置的卡盘工作台上的方式的立体图。
图5是示出分割工序的实施方式的立体图。
图6是示出将实施了图5所示的分割工序的一体化单元W载置于剥离用保持工作台上的方式的立体图。
图7是示出将基质从图6所示的一体化单元W剥离的方式的立体图。
图8的(a)、(b)是依次示出划片带配设工序的立体图。
图9的(a)是示出片热压接工序的其他实施方式的立体图，图9的(b)是示出片热压接工序的其他实施方式的局部放大剖视图。
标号说明
10：晶片；12：器件；14：分割预定线；20：片；30：基质；40：支承工作台；42：电加热器；50：基台；52：吸引孔；60：热压接装置；62：密闭罩部件；64：按压部件；64b：按压板；70：切削装置；72：主轴；74：刀具罩；80：卡盘工作台；90：剥离用保持工作台；200：膜状部件；210：辊。
具体实施方式
以下，参照附图对根据本发明构成的晶片的加工方法的一个实施方式进行详细的说明。
在实施本实施方式的晶片的加工方法时，首先如图1的(a)所示，准备作为被加工物的晶片10、片20以及基质30。在晶片10的正面10a上由相互交叉的多条分割预定线14划分而形成有多个器件12。片20设定成与晶片10相同的形状，片20由聚烯烃系片或聚酯系片构成。在本实施方式中，选择聚烯烃系的聚乙烯(PE)片作为片20。另外，基质30的形状与晶片10和片20相同，基质30是比晶片10、片20具有刚性的支承板，由不受后述的片热压接工序时的设定温度影响的玻璃形成。
(晶片配设工序)
若准备了晶片10、片20以及基质30，则如图1的(a)所示，使晶片10的正面10a朝向上方(即，使背面10b朝向下方)而隔着片20配设于敷设在支承工作台40的上表面40a上的基质30上(参照图1的(b))。支承工作台40配设于基台50上，支承工作台40的上表面平坦地形成。
(片热压接工序)
若实施了上述的晶片配设工序，则实施图2所示的片热压接工序。片热压接工序是如下的工序：在密闭环境内对隔着片20而配设于基质30的晶片10进行减压，对片20进行加热，并且将晶片10向片20按压而将晶片10和片20热压接。另外，在支承工作台40的内部内置有电加热器42和未图示的温度传感器作为加热单元。电加热器42和该温度传感器与未图示的控制装置和电源连接，能够将支承工作台40调整为期望的温度。以下进行具体的说明。
为了实施片热压接工序，利用图2的(a)所示的热压接装置60。热压接装置60具有用于形成包含支承工作台40在内的密闭环境的密闭罩部件62。另外，图2是热压接装置60的局部侧视图，为了便于说明内部的结构，仅示出密闭罩部件62的剖面。密闭罩部件62是将基台50的整个上表面覆盖的箱型部件，由上壁62a和从上壁62a的外周端部垂下的侧壁62b构成，下方侧开放。在上壁62a的中央形成有开口62c，该开口62c用于供按压部件64的支承轴64a贯通且在上下方向上进退。另外，为了在使支承轴64a上下进退的同时使密闭罩部件62的内部空间S与外部隔断而成为密闭环境，在对支承轴64a的外周进行支承的开口部62c处形成有密封构造62d。在支承轴64a的下端配设有按压板64b。按压板64b的直径至少大于晶片10，优选按压板64b是设定成比支承工作台40略大的尺寸的圆盘形状。在密闭罩部件62的侧壁62b的下端面上沿着整个圆周配设有弹性密封部件62e。另外，虽省略了图示，但在按压部件64的上方配设有用于使按压部件64在上下方向上进退的驱动单元。
若在支承工作台40上隔着片20和基质30而载置了晶片10，则如图2的(a)所示，使定位于基台50上的密闭罩部件62下降而载置于基台50上。此时，如图2的(b)所示，按压板64b被提起至不与晶片10的上表面接触的上方位置。当密闭罩部件62载置于基台50上时，配设于侧壁62b的下端面的弹性密封部件62e与基台50的上表面紧贴。在基台50上的支承工作台40的附近位置配设有吸引孔52，未图示的吸引单元经由吸引孔52而与通过密闭罩部件62所形成的内部空间S连接。
若如图2的(b)所示那样将密闭罩部件62载置于基台50上而使密闭罩部件62的内部空间S成为密闭环境，则使该吸引单元进行动作，经由吸引孔52而对内部空间S的空气进行吸引，将包含晶片10的区域减压至接近真空的状态。与此同时，使内置于支承工作台40的电加热器42进行动作并通过未图示的温度传感器对支承工作台40的温度进行控制，从而将构成片20的聚乙烯片加热至熔点附近的温度(120℃～140℃)。另外，在对片20进行加热的同时，如图2的(c)所示，使按压板64b下降而利用均等的力对晶片10的整个上表面进行按压。收纳有晶片10的内部空间S减压至接近真空的状态，残留在晶片10、片20以及基质30之间的空气被吸引而去除。并且，片20被加热至上述的温度而发生软化，发挥出粘接性，将晶片10、片20以及基质30热压接，如图3所示，形成一体化单元W。如上所述，完成片热压接工序。若这样完成了片热压接工序，则使未图示的吸引单元和电加热器42停止，使按压板64b上升，并且将密闭罩部件62向上方提起。若片20的温度下降至常温附近，则能够将一体化单元W从支承工作台40搬出。
根据上述的片热压接工序，在密闭环境内进行了减压的状态下，对片20进行加热，在片20发生了软化的状态下从上方按压晶片10而使晶片10与片20紧贴，因此晶片10不借助液态树脂、糊料剂、蜡等而能够以充分的支承力隔着片20支承于基质30。
(分割工序)
若实施了上述的片热压接工序，则实施分割工序，沿着分割预定线14对已成为一体化单元W的晶片10实施切削加工。以下，对分割工序进行具体的说明。
如图4所示，将通过片热压接工序得到的一体化单元W搬送至实施切削加工的切削装置70(仅示出一部分)，使基质30侧朝下而载置于配设在切削装置70的卡盘工作台80的吸附卡盘80a上。吸附卡盘80a由具有通气性的多孔陶瓷构成，使与卡盘工作台80连接的未图示的吸引单元进行动作，从而将一体化单元W吸引保持于卡盘工作台80上。
如图5所示，切削装置70具有主轴单元71。主轴单元71具有对固定于主轴72的前端部的切削刀具73进行保持的刀具罩74。在刀具罩74上，在夹着切削刀具73而相邻的位置配设有切削水提供管75，朝向切削刀具73对晶片10的切削部位提供切削水。
在通过切削刀具73实施切削之前，使用未图示的对准单元进行切削刀具73与形成于晶片10的正面10a侧的分割预定线14的对位(对准)。
若实施了基于该对准单元的对准，则如图5所示，将高速旋转的切削刀具73从卡盘工作台80所保持的晶片10的正面10a侧定位于分割预定线14的加工开始位置并使该切削刀具73下降而切入至晶片10，使晶片10相对于切削刀具73在箭头X所示的X方向(加工进给方向)上移动。切削刀具73的前端位置设定成从晶片10的正面10a至片20的深度，通过切削刀具73沿着分割预定线14形成将晶片10完全分割的分割槽100。使对包含晶片10的一体化单元W进行保持的卡盘工作台80在X方向上移动，除此以外，也一边使该卡盘工作台80在箭头Y所示的Y方向和旋转方向上适当地移动一边通过上述的切削加工，沿着晶片10的所有分割预定线14形成切削槽100(参照图6的上段)，分割成各个器件芯片12’。如上所述，完成分割工序。
(剥离工序)
若完成了上述的分割工序，则实施剥离工序，将片20和基质30从晶片10剥离。以下，对剥离工序的实施步骤进行说明。
将包含通过上述的分割工序而被分割成各个器件芯片12’的晶片10的一体化单元W从切削装置70的卡盘工作台80搬出，搬送至图6所示的剥离用保持工作台90。使搬送至剥离用保持工作台90的一体化单元W上下翻转而使基质30朝向上方(即、使晶片10朝向下方)而载置于剥离用保持工作台90的吸附卡盘90a上。另外，也可以是剥离用保持工作台90具有与上述的切削装置70的卡盘工作台80同样的结构，不另外准备剥离用保持工作台90而使用切削装置70的卡盘工作台80。
若使未图示的吸引单元进行动作而将一体化单元W吸引保持于剥离用保持工作台90上，则对片20进行加热等而如图7所示那样将片20和基质30从晶片10剥离。另外，在实施剥离工序时，若对片20进行加热，则片20发生软化，因此能够容易剥离，但也可以在将片20从晶片10剥离之前将基质30从片20剥离。在该情况下，依次将基质30和片20剥离即可。
在上述的说明中，在将片20和基质30从晶片10剥离时对片20进行加热，但有时也通过冷却而使片20的粘接力降低，还可以在对片20进行冷却之后实施上述剥离工序。在实施剥离工序时，关于对片20进行加热还是进行冷却，根据构成片20的原材料的特性进行选择即可。如上所述，完成剥离工序，晶片10在仍被吸引保持于剥离用保持工作台90的状态下成为被分割成各个器件芯片12’的状态。
(划片带配设工序)
在本实施方式中，考虑将已被分割成各个器件芯片12’的晶片10收纳于规定的盒容器中、或者一个一个地拾取分割得到的器件芯片12’而搬送至下一工序，在实施了上述的剥离工序之后，实施划片带配设工序。经由上述的剥离工序，对于吸引保持于剥离用保持工作台90上的晶片10，由图7可理解，晶片10的背面10b向上方露出。在本实施方式中，如图8的(a)所示，准备具有开口部的环状框架F，该开口部设定成比晶片10大的尺寸，将比该开口部大的圆形的划片带T的外周粘贴于框架F上，并且将剥离用保持工作台90所保持的晶片10定位于开口部的中央，将晶片10的背面10b粘贴在划片带T上。并且，使与剥离用保持工作台90连接的未图示的吸引单元停止，从而使晶片10从剥离用保持工作台90脱离。并且，如图8的(b)所示，使借助划片带T而保持于框架F的晶片10翻转，从而完成划片带配设工序。这样，即使是在分割成各个器件芯片12’之后，也能够在维持晶片10的形态的状态下收纳于未图示的盒容器或者搬送至未图示的实施拾取工序等的拾取装置等。
根据本实施方式，通过实施片热压接工序，从而晶片10隔着片20以充分的支承力被支承于基质30，在对晶片10实施切削加工时可稳定地支承晶片10，即使通过切削刀具73对形成于晶片10的正面10a的分割预定线14进行切削加工，也可防止在器件芯片12’上产生缺损等。另外，在晶片配设工序中，未借助液态树脂、糊料剂以及蜡等而通过片20将晶片10保持于基质30，因此即使在分割工序结束而将片20和基质30从晶片的背面10b剥离，也不会在器件芯片12’的背面上残留液态树脂、糊料剂、蜡等，不会使器件的品质降低。
另外，在上述的实施方式中，通过聚乙烯片构成片20，但本发明不限于此。作为无需液态树脂、糊料剂、蜡等而能够对晶片10进行支承的片20，可以从聚烯烃系片、聚酯系片中适当选择。作为聚烯烃系片，除了上述的聚乙烯片以外，例如可以选择聚丙烯(PP)片、聚苯乙烯(PS)片。另外，作为聚酯系片，例如可以选择聚对苯二甲酸乙二醇酯(PET)片、聚萘二甲酸乙二醇酯(PEN)片。
在上述的实施方式中，将在片热压接工序中对片20进行加热时的温度设定为聚乙烯片的熔点附近的温度(120℃～140℃)，但在如上述那样选择其他片来构成片20的情况下，优选加热至所选择的片的原材料的熔点附近的温度。例如在片20由聚丙烯片构成的情况下，优选将加热时的温度设定为160℃～180℃，在片20由聚苯乙烯片构成的情况下，优选使加热时的温度为220℃～240℃。另外，在片20由聚对苯二甲酸乙二醇酯片构成的情况下，优选使加热时的温度为250℃～270℃，在片20由聚萘二甲酸乙二醇酯片构成的情况下，优选将加热时的温度设定为160℃～180℃。
另外，在上述的实施方式中，通过密闭罩部件62来形成内部空间S从而成为密闭环境，但本发明不限于此。例如，可以如图9的(a)所示，将晶片10与片20、基质30一起保持于具有比基质30大的吸附卡盘96的保持工作台94上，将吸附卡盘96的整个上表面用膜状部件200覆盖，从吸附卡盘96作用负压Vm，从而使包含晶片10在内的膜状部件200的内侧成为密闭环境，对该密闭环境内的空间进行减压。并且，也可以如在图9的(b)中作为局部放大剖视图所示，通过具有加热单元(省略图示)的辊210，一边将片20加热至期望的温度，一边从膜状部件200的上方对晶片10的整个背面10b进行按压，从而实施本发明的片热压接工序。
在上述的实施方式中，由玻璃构成基质30，但本发明不限于此，若能够确保在片热压接工序时即使对片20进行加热也不发生软化，并且在实施分割工序时能够不使晶片10破损而进行支承的刚性，则可以采用由其他原材料构成的基质30，例如由铝、陶瓷等构成的基质30。另外，若是不容易受到对片20进行加热时的温度影响的熔点较高的原材料，则可以从树脂中进行选择。例如在选择聚乙烯片作为片20的情况下的片热压接工序时的加热温度为120℃～140℃，因此可以采用熔点为250℃～270℃的聚对苯二甲酸乙二醇酯(PET)作为基质30。即，优选基质30从熔点温度比片20高的原材料中进行选择。

Claims (5)

1.一种晶片的加工方法，将由相互交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片，其中，
该晶片的加工方法具有如下的工序：
晶片配设工序，在对晶片进行支承的基质的上表面上敷设聚烯烃系片或聚酯系片中的任意的片，将晶片的背面定位在该片的上表面上而进行配设；
片热压接工序，在密闭环境内对隔着该片而配设于该基质的晶片进行减压并对该片进行加热，并且将晶片向该片按压，从而隔着该片将晶片热压接在该基质上；
分割工序，在实施了该片热压接工序之后，将切削刀具定位于晶片的正面而对分割预定线进行切削，从而将晶片分割成各个器件芯片；以及
剥离工序，在实施了该分割工序之后，将该片和该基质从晶片的背面剥离。
2.根据权利要求1所述的晶片的加工方法，其中，
该聚烯烃系片从由聚乙烯片、聚丙烯片以及聚苯乙烯片构成的组中进行选择。
3.根据权利要求2所述的晶片的加工方法，其中，
关于在选择了聚烯烃系片作为该片的情况下的该片热压接工序中的该片的加热温度，在该片由聚乙烯片构成的情况下，该加热温度为120℃～140℃，在该片由聚丙烯片构成的情况下，该加热温度为160℃～180℃，在该片由聚苯乙烯片构成的情况下，该加热温度为220℃～240℃。
4.根据权利要求1所述的晶片的加工方法，其中，
该聚酯系片从由聚对苯二甲酸乙二醇酯片和聚萘二甲酸乙二醇酯片构成的组中进行选择。
5.根据权利要求4所述的晶片的加工方法，其中，
关于在选择了聚酯系片作为该片的情况下的该片热压接工序中的该片的加热温度，在该片由聚对苯二甲酸乙二醇酯片构成的情况下，该加热温度为250℃～270℃，在该片由聚萘二甲酸乙二醇酯片构成的情况下，该加热温度为160℃～180℃。
CN201910613278.9A 2018-07-26 2019-07-09 晶片的加工方法 Active CN110783249B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-140247 2018-07-26
JP2018140247A JP7181020B2 (ja) 2018-07-26 2018-07-26 ウエーハの加工方法

Publications (2)

Publication Number Publication Date
CN110783249A CN110783249A (zh) 2020-02-11
CN110783249B true CN110783249B (zh) 2023-09-15

Family

ID=69149139

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910613278.9A Active CN110783249B (zh) 2018-07-26 2019-07-09 晶片的加工方法

Country Status (6)

Country Link
US (1) US10879122B2 (zh)
JP (1) JP7181020B2 (zh)
KR (1) KR102692687B1 (zh)
CN (1) CN110783249B (zh)
DE (1) DE102019211057A1 (zh)
TW (1) TWI787535B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220550A (ja) * 2018-06-19 2019-12-26 株式会社ディスコ ウエーハの加工方法
JP7286247B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
JP7286245B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
JP7345973B2 (ja) * 2019-08-07 2023-09-19 株式会社ディスコ ウェーハの加工方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7383338B2 (ja) * 2019-10-10 2023-11-20 株式会社ディスコ ウェーハの加工方法
JP7387228B2 (ja) * 2019-10-17 2023-11-28 株式会社ディスコ ウェーハの加工方法
JP7301480B2 (ja) * 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP2021077735A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP2022177553A (ja) * 2021-05-18 2022-12-01 Tdk株式会社 基板処理装置
JP2022177554A (ja) * 2021-05-18 2022-12-01 Tdk株式会社 基板処理装置および基板処理方法
JP2023019193A (ja) * 2021-07-28 2023-02-09 株式会社ディスコ 被加工物の加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102373019A (zh) * 2010-07-29 2012-03-14 日东电工株式会社 半导体背面用切割带集成膜及用于生产半导体器件的方法
CN103748664A (zh) * 2011-08-09 2014-04-23 三井化学东赛璐株式会社 半导体装置的制造方法及该方法中所使用的半导体晶片表面保护用膜
CN104851826A (zh) * 2014-02-18 2015-08-19 信越化学工业株式会社 真空层压装置及半导体装置的制造方法
CN105122482A (zh) * 2013-03-28 2015-12-02 东芝北斗电子株式会社 发光装置、其制造方法及使用发光装置的装置
CN107075187A (zh) * 2014-09-29 2017-08-18 富士胶片株式会社 组合物、片的制造方法、片、层叠体及带有元件晶片的层叠体

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153352A (ja) * 1982-03-09 1983-09-12 Toshiba Corp 半導体素子の製造方法
JP3280876B2 (ja) * 1996-01-22 2002-05-13 日本テキサス・インスツルメンツ株式会社 ウェハダイシング・接着用シートおよび半導体装置の製造方法
JP2002203821A (ja) 2000-12-28 2002-07-19 Mitsubishi Gas Chem Co Inc 接着および剥離法
JP2003037155A (ja) 2001-07-25 2003-02-07 Mitsubishi Gas Chem Co Inc 薄葉化ウェハーの製造法
JP4074758B2 (ja) * 2001-06-18 2008-04-09 株式会社ディスコ 半導体ウエーハの加工方法
TWI241674B (en) * 2001-11-30 2005-10-11 Disco Corp Manufacturing method of semiconductor chip
JP2004153159A (ja) * 2002-10-31 2004-05-27 Enzan Seisakusho:Kk 半導体ウェハの保護部材貼着方法及びその装置
JP2005191297A (ja) 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP2005340390A (ja) * 2004-05-25 2005-12-08 Nec Compound Semiconductor Devices Ltd 半導体装置の製造装置及び製造方法
JP2006295030A (ja) * 2005-04-14 2006-10-26 Nitto Denko Corp 半導体装置の製造方法、およびそれに用いる粘着シート
JP4841866B2 (ja) * 2005-06-01 2011-12-21 リンテック株式会社 接着シート
JP4930679B2 (ja) 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
JP5151104B2 (ja) 2006-09-22 2013-02-27 パナソニック株式会社 電子部品の製造方法
JP2010050214A (ja) 2008-08-20 2010-03-04 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2010184319A (ja) 2009-02-12 2010-08-26 Disco Abrasive Syst Ltd 切削方法
JP2016063060A (ja) * 2014-09-18 2016-04-25 株式会社ディスコ ウエーハの加工方法
JP6356581B2 (ja) * 2014-11-19 2018-07-11 信越化学工業株式会社 半導体装置の製造方法
WO2017036512A1 (en) 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
GB2551732B (en) 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JPWO2018003312A1 (ja) 2016-06-30 2019-04-18 リンテック株式会社 半導体加工用シート

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102373019A (zh) * 2010-07-29 2012-03-14 日东电工株式会社 半导体背面用切割带集成膜及用于生产半导体器件的方法
CN103748664A (zh) * 2011-08-09 2014-04-23 三井化学东赛璐株式会社 半导体装置的制造方法及该方法中所使用的半导体晶片表面保护用膜
CN105122482A (zh) * 2013-03-28 2015-12-02 东芝北斗电子株式会社 发光装置、其制造方法及使用发光装置的装置
CN104851826A (zh) * 2014-02-18 2015-08-19 信越化学工业株式会社 真空层压装置及半导体装置的制造方法
CN107075187A (zh) * 2014-09-29 2017-08-18 富士胶片株式会社 组合物、片的制造方法、片、层叠体及带有元件晶片的层叠体

Also Published As

Publication number Publication date
KR102692687B1 (ko) 2024-08-06
TWI787535B (zh) 2022-12-21
JP2020017658A (ja) 2020-01-30
JP7181020B2 (ja) 2022-11-30
KR20200012732A (ko) 2020-02-05
US20200035559A1 (en) 2020-01-30
TW202007742A (zh) 2020-02-16
CN110783249A (zh) 2020-02-11
DE102019211057A1 (de) 2020-01-30
US10879122B2 (en) 2020-12-29

Similar Documents

Publication Publication Date Title
CN110783249B (zh) 晶片的加工方法
CN110620081B (zh) 晶片的加工方法
CN110491820B (zh) 晶片的加工方法
JP7049941B2 (ja) ウエーハの加工方法
CN110491783B (zh) 晶片的加工方法
CN110571132B (zh) 晶片的加工方法
CN110429062B (zh) 晶片的加工方法
CN111063608A (zh) 晶片的加工方法
CN110808209A (zh) 晶片的加工方法
JP7317482B2 (ja) ウエーハの加工方法
JP2002353296A (ja) ウェハの保護テープ剥離装置およびウェハのマウント装置
CN110880454B (zh) 晶片的加工方法
KR20210023682A (ko) 웨이퍼의 가공 방법
JP7404109B2 (ja) 一体化方法
KR20210145667A (ko) 웨이퍼의 가공 방법
JP2020043111A (ja) ウェーハの加工方法
JP2020024988A (ja) ウェーハの加工方法
JP2020024968A (ja) ウェーハの加工方法
JP2019212784A (ja) ウェーハの加工方法
JP2020009872A (ja) ウェーハの加工方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant