TW202002037A - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TW202002037A
TW202002037A TW108121003A TW108121003A TW202002037A TW 202002037 A TW202002037 A TW 202002037A TW 108121003 A TW108121003 A TW 108121003A TW 108121003 A TW108121003 A TW 108121003A TW 202002037 A TW202002037 A TW 202002037A
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wafer
sheet
processing method
processing
thermocompression bonding
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木內人
山本敬祐
木村泰一朗
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日商迪思科股份有限公司
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Abstract

[課題]提供一種將晶圓的背面加工時，不會有使元件的生產性或品質降低的情形的晶圓的加工方法。 [解決手段]本發明之晶圓的加工方法係包含：晶圓配設工程，其係在上面形成為平坦的支持平台(40)的上面舖設與晶圓(10)的形狀為同等以上的大小的聚烯烴系薄片(20)、或聚酯系薄片(20)的任一者，在薄片(20)的上面(20a)定位晶圓(10)的表面(10a)來進行配設；薄片熱壓接工程，其係將透過薄片(20)而配設在支持平台(40)的晶圓(10)在密閉環境內減壓而將薄片(20)加熱，且按壓晶圓(10)而在薄片(20)壓接晶圓(10)，並且將圍繞晶圓(10)的凸起部(22)形成在晶圓(10)的外周；背面加工工程，其係在晶圓(10)的背面(10b)施行加工；及剝離工程，其係將晶圓(10)由薄片(20)剝離。

Description

晶圓的加工方法
本發明係關於將晶圓的背面進行加工的晶圓的加工方法。
IC、LSI等複數元件藉由彼此交叉的複數分割預定線予以區劃而形成在表面的晶圓係在背面被研削裝置研削而加工成預定的厚度之後，藉由切割裝置(切割機)而被分割成各個元件晶片，經分割的元件晶片係被利用在行動電話、個人電腦等電氣機器。
研削裝置係包含：具有保持晶圓的保持面的吸盤平台；可旋轉地配備將被保持在該吸盤平台的晶圓的上面進行研削的研削輪的研削單元；及將研削砥石進行研削進給的進給手段，可將晶圓研削成所希望的厚度(參照例如專利文獻1)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2005-246491號公報
(發明所欲解決之課題)
當藉由研削裝置來研削晶圓的背面時，有在晶圓的表面側貼接具有黏著層的保護膠帶，俾以不會因吸盤平台的保持面與晶圓的表面的接觸而在形成在晶圓的表面的複數元件造成損傷的情形。但是，若將保護膠帶配設在晶圓的表面而載置於吸盤平台，藉由研削裝置進行研削時，在研削進給方向(上下方向)、及水平方向施加強負荷，相對被配設在晶圓的表面的保護膠帶，晶圓偏移，而有晶圓損傷的問題。
尤其，若在形成在晶圓的表面的元件形成複數個稱為凸塊的突起電極時，晶圓的表面與保護膠帶之間的接觸面積相對較小，晶圓未安定地支持在保護膠帶，容易發生上述問題。
此外，研削結束而將保護膠帶由晶圓的表面剝離時，貼接保護膠帶時所使用的糊劑、蠟等附著在該凸塊而殘留，亦有使元件品質降低的問題，藉由追加將該等糊劑、蠟等去除的工程，生產性亦會降低。其中，亦提案出替代保護膠帶而在晶圓的表面塗布液狀樹脂，且形成樹脂層而保護晶圓的表面，但是耗費由晶圓的表面完全去除液狀樹脂的勞力，仍在元件的品質、或生產性產生問題。
因此，本發明之目的係提供將晶圓的背面加工時，不會有使元件的生產性或品質降低的情形的晶圓的加工方法。 (解決課題之手段)
藉由本發明，提供一種晶圓的加工方法，其係將複數元件藉由彼此交叉的複數分割預定線予以區劃而形成在表面的晶圓的背面進行加工的晶圓的加工方法，其係具備：晶圓配設工程，其係在上面形成為平坦的支持平台的該上面舖設與晶圓的形狀為同等以上的大小的聚烯烴系薄片、或聚酯系薄片的任一者，在該薄片的上面定位晶圓的表面來進行配設；薄片熱壓接工程，其係在實施該晶圓配設工程之後，將透過該薄片而配設在該支持平台的晶圓在密閉環境內減壓而將該薄片加熱，且按壓晶圓而在該薄片壓接晶圓，並且將圍繞該晶圓的凸起部形成在該晶圓的外周；背面加工工程，其係在實施該薄片熱壓接工程之後，在晶圓的背面施行加工；及剝離工程，其係在實施該背面加工工程之後，將晶圓由該薄片剝離。
較佳為該支持平台係包含加熱手段，在該薄片熱壓接工程中，該支持平台以該加熱手段被加熱。此外，該支持平台的上面係以氟樹脂被覆為佳。較佳為在該背面加工工程中，實施將晶圓的背面研削的研削加工。
較佳為選擇聚烯烴系的薄片作為該薄片時的該薄片熱壓接工程中的該薄片的加熱溫度，若以聚乙烯薄片構成該薄片，係120~140℃，若以聚丙烯薄片構成該薄片，係160~180℃，若以聚苯乙烯薄片構成該薄片，係220~240℃。
較佳為該聚酯系的薄片係由聚對苯二甲酸乙二酯薄片、聚對萘二甲酸乙二酯薄片之任一者所構成。較佳為選擇聚酯系的薄片作為該薄片時的該薄片熱壓接工程中的該薄片的加熱溫度，若以聚對苯二甲酸乙二酯薄片構成該薄片，係250~270℃，若以聚對萘二甲酸乙二酯薄片構成該薄片，係160~180℃。 (發明之效果)
藉由本發明，晶圓藉由薄片以充分的支持力支持，即使在晶圓的背面施行加工，亦不會有晶圓破損的情形。此外，即使為在元件的表面形成有複數凸塊的情形，該凸塊亦被埋設在薄片而被確實支持，背面加工工程時的應力被分散，而解決晶圓破損的問題。
此外，藉由本發明之加工方法，藉由將晶圓熱壓接在該薄片而一體化，因此在背面加工工程結束之後，即使將該薄片由晶圓的背面剝離，亦不會發生糊劑、蠟、液狀樹脂等殘留在凸塊的問題，解決使元件品質降低的問題。
以下一邊參照所附圖示，一邊詳加說明將根據本發明所構成的晶圓的背面進行加工的加工方法的實施形態。
實施本實施形態之晶圓的加工方法時，首先，如圖1(a)所示，準備作為被加工物的晶圓10、及薄片20。在晶圓10的表面10a係藉由分割預定線14予以區劃而形成有複數元件12。薄片20係設定成至少與晶圓10的形狀為同等以上的大小，藉由聚烯烴系薄片、或聚酯系薄片所構成。在本實施形態中，選擇聚烯烴系的聚乙烯(PE)薄片作為薄片20。
(晶圓配設工程) 若備妥晶圓10、及薄片20，如圖1(a)所示，將晶圓10的背面10b朝向上方，亦即，將表面10a朝向下方，配設在被舖設在支持平台40的上面的薄片20的上面20a(參照圖1(b))。支持平台40係配設在基台50上，支持平台40的上面係形成為平坦，以氟樹脂被覆。
(薄片熱壓接工程) 若上述晶圓配設工程被實施，實施圖2所示之薄片熱壓接工程。薄片熱壓接工程係將配設在薄片20的晶圓10在密閉環境內減壓而將薄片20加熱，並且按壓晶圓10，而將晶圓10與薄片20進行熱壓接的工程。其中，在支持平台40的內部係內置電氣加熱器42、及未圖示的溫度感測器，作為加熱手段。電氣加熱器42及該溫度感測器係連接於未圖示的控制裝置、及電源，可將支持平台40調整為所希望的溫度。以下具體說明之。
為了實施薄片熱壓接工程，利用圖2(a)所示之熱壓接裝置60。熱壓接裝置60係具備用以形成包含支持平台40的密閉環境的密閉蓋件構件62。其中，圖2係熱壓接裝置60的側面圖，但是為了方便說明內部的構成，僅密閉蓋件構件62顯示剖面。密閉蓋件構件62係覆蓋基台50的上面全體的箱型構件，由上壁62a、及由上壁62a的外周端部垂下的側壁62b所構成，下方側係呈開放。在上壁62a的中央係形成有供按壓構件64的支持軸64a貫穿且用以使其以上下方向進退的開口62c。此外，為了一邊使支持軸64a以上下作進退，一邊將密閉蓋件構件62的內部空間S與外部遮斷而形成為密閉環境，在支持支持軸64a的外周的開口部62c形成密封構造62d。在支持軸64a的下端係配設有按壓板64b。按壓板64b係至少比晶圓10為大徑，較佳為設定為比支持平台40為稍大的尺寸的圓盤形狀。在密閉蓋件構件62的側壁62b的下端面係遍及全周配設有彈性密封構件62e。此外，雖省略圖示，在按壓構件64的上方係配設用以使按壓構件64以上下方向作進退的驅動手段。
若在支持平台40上透過薄片20而載置晶圓10，如圖2(a)所示，使被定位在基台50上的密閉蓋件構件62下降而載置於基台50上。此時，按壓板64b係如圖2(b)所示，被上拉至未接觸晶圓10的上面的上方位置。若密閉蓋件構件62被載置於基台50上，被配設在側壁62b的下端面的彈性密封構件62e密接於基台50的上面。在基台50中的支持平台40的近傍位置係配設有吸引孔52，透過吸引孔52，在藉由密閉蓋件構件62所形成的內部空間S連接未圖示的吸引手段。
如圖2(b)所示，將密閉蓋件構件62載置於基台50上，若密閉蓋件構件62的內部空間S形成為密閉環境，將該吸引手段作動，透過吸引孔52而吸引內部空間S的空氣，將包含晶圓10的區域減壓至接近真空的狀態。與此同時，使電氣加熱器42作動，而將支持晶圓10的薄片20加熱。使支持平台40的電氣加熱器42作動，且藉由未圖示的溫度感測器來控制支持平台40的溫度，藉此，構成薄片20的聚乙烯薄片加熱至成為熔點近傍的溫度(120~140℃)。此外，將薄片20加熱的同時，如圖2(c)所示，使按壓板64b下降而以均等的力按壓晶圓10的上面全體。收容晶圓10的內部空間S係被減壓至接近真空的狀態，殘留在晶圓10與薄片20之間的空氣係被吸引而去除。接著，薄片20係藉由被加熱至上述溫度而軟化而黏著性增加，薄片20與晶圓10被熱壓接而形成一體化單元W。藉由以上，薄片熱壓接工程即完成。若如上所示而薄片熱壓接工程完成，將未圖示的吸引手段、及電氣加熱器42停止，且使按壓板64b上升，並且將密閉蓋件構件62上拉至上方。若薄片20的溫度降低至常溫近傍，可由支持平台40搬出一體化單元W。在本實施形態中，在支持平台40的上面被覆氟樹脂，因此即使為因被加熱而黏著性增加的薄片20，亦容易由支持平台40剝離。
一邊參照圖3，一邊更加說明藉由實施上述薄片熱壓接工程而形成的一體化單元W。如上所述、藉由薄片熱壓接工程，在密閉環境內減壓的狀態下，將薄片20加熱，且在薄片20軟化的狀態下按壓晶圓10而使其密接，因此晶圓10係無須透過糊劑或蠟等而以充分的支持力被支持在薄片20。此外，即使在形成在晶圓10的表面10a的元件12形成有複數凸塊16的情形下，由該凸塊16的近傍，空氣被完全吸引而被去除，以圖中放大顯示一體化單元W的端部的剖面的方式，在被加熱而軟化的狀態的薄片20埋設凸塊16且密接而一體化。接著，薄片20相對晶圓10的形狀以同等以上的大小形成，因此薄片20的外周凸起，形成由外方圍繞晶圓10的外周10c的凸起部22。
(背面加工工程) 若實施上述薄片熱壓接工程，實施在形成為一體化單元W的晶圓10的背面10b施行研削加工的背面加工工程。以下具體說明背面加工工程。
將藉由薄片熱壓接工程所得的一體化單元W，如圖4(a)所示，搬送至實施研削加工的研削裝置70(僅顯示一部分)，將薄片20側形成為下而載置於研削裝置70所具備的吸盤平台71的吸附吸盤71a上。吸附吸盤71a係由具通氣性的多孔陶瓷所成，使連接於吸盤平台71的未圖示的吸引手段作動，藉此一體化單元W被吸引保持在吸盤平台71。
若在吸盤平台71吸引保持一體化單元W，藉由圖4(b)所示之研削裝置70研削晶圓10的背面10b。研削裝置70係具備有：用以將作為一體化單元W而被吸引保持在吸盤平台71上的晶圓10的背面10b研削而薄化的研削單元72。研削單元72係具備有：藉由未圖示的旋轉驅動機構被旋轉的旋轉心軸74；被裝設在旋轉心軸74的下端的安裝機76；及被安裝在安裝機76的下面的研削輪78，在研削輪78的下面係以環狀配設有研削砥石78a。
若將晶圓10吸引保持在吸盤平台71上，一邊使研削單元72的旋轉心軸74在圖4(b)中以箭號R1所示方向以例如6000rpm旋轉，一邊使吸盤平台71在圖4(b)中以箭號R2所示方向以例如300rpm旋轉。接著，使研削砥石78a接觸晶圓10的背面10b，將研削輪78，以例如1μm/秒的研削進給速度，以下方，亦即相對吸盤平台71呈垂直的方向進行研削進給。此時，可一邊藉由未圖示的接觸式的測定量器來測定晶圓10的厚度，一邊進行研削，晶圓10的背面10b被研削而將晶圓10形成為預定的厚度，例如50μm，背面加工工程即完成。
(剝離工程) 若上述之背面加工工程完成，實施將晶圓10由薄片20剝離的剝離工程。以下說明剝離工程的實施順序。
藉由背面加工工程被研削且薄化的晶圓10係連同薄片20一起由研削裝置70的吸盤平台71被搬出。由吸盤平台71被搬出的晶圓10係被搬送至圖5(a)所示之剝離用吸盤平台80。晶圓10及薄片20係如圖所示，使上下反轉，將薄片20的背面20b朝向上方，亦即，將晶圓10的背面10b朝向下方，而載置於剝離用吸盤平台80的吸附吸盤80a上。其中，剝離用吸盤平台80係具備有與上述研削裝置70的吸盤平台71同樣的構成，但是研削裝置70的吸附吸盤71a被設定為與薄片20為同等的直徑，相對於此，剝離用吸盤平台80的吸附吸盤80a係被設定為與晶圓10為同等的直徑。
藉由使未圖示的吸引手段作動，若將晶圓10吸引保持在剝離用吸盤平台80，如圖5(b)所示，將薄片20由晶圓10剝離。其中，薄片20係選自聚烯烴系薄片、或聚酯系薄片，因此當使其由晶圓10剝離時可使其彎曲，較為方便。此外，實施剝離工程時，若將薄片20加熱，薄片20會軟化，因此可使其更加容易剝離。
在上述說明中，係當將薄片20由晶圓10剝離時，將薄片20加熱，但是亦有因冷卻而薄片20的黏著力降低的情形，亦可將薄片20冷卻之後，再實施剝離工程。當實施剝離工程時，將薄片20加熱、或冷卻，係若按照構成薄片20的素材的特性來進行選擇即可。
藉由本實施形態，晶圓10係藉由實施薄片熱壓接工程，以充分的支持力被支持在薄片20，將圍繞晶圓10的外周部10c的凸起部22形成在薄片20的外周，因此當對晶圓10施行研削加工時，晶圓10被安定支持，即使在晶圓10的背面10b施行研削加工，亦防止晶圓破損。此外，即使為在形成在晶圓10的表面10a的元件12上形成有複數凸塊的情形下，晶圓10的表面10a與薄片20之間的空氣被吸引而被去除，並且凸塊埋設在因加熱而軟化的薄片20，晶圓10全體被均等支持，因此研削時的應力被分散而防止晶圓10或凸塊破損。此外，在本實施形態中，係使晶圓10藉由熱壓接而支持在薄片20，在薄片20與晶圓10之間未介在有液狀樹脂、糊劑、蠟等。因此，即使將晶圓10由薄片20剝離，亦不會有在元件12殘留液狀樹脂、糊劑、蠟等的情形，不會發生使元件12的品質降低的問題。
其中，在上述實施形態中，係藉由聚乙烯薄片構成薄片20，但是本發明並非限定於此。以不會有必須要有液狀樹脂、糊劑、蠟等的情形而可支持晶圓10的薄片20而言，可由聚烯烴系薄片、聚酯系薄片之中適當選擇。以聚烯烴系薄片而言，除了上述聚乙烯薄片之外，可選擇例如聚丙烯(PP)薄片、聚苯乙烯(PS)薄片。此外，以聚酯系薄片而言，可選擇例如聚對苯二甲酸乙二酯(PET)薄片、聚對萘二甲酸乙二酯(PEN)薄片。
在上述實施形態中，係將在薄片熱壓接工程中將薄片20加熱時的溫度，設定在聚乙烯薄片的熔點近傍的溫度(120~140℃)，但是如上所述，若選擇其他薄片作為薄片20而構成時，以成為所選擇的薄片的素材的熔點近傍的溫度的方式進行加熱為佳。例如，較佳為若薄片20由聚丙烯薄片所構成時，將加熱時的溫度設定設為160~180℃，若薄片20由聚苯乙烯薄片所構成時，將加熱時的溫度形成為220~240℃。此外，較佳為若薄片20由聚對苯二甲酸乙二酯薄片所構成時，將加熱時的溫度設為250~270℃，若薄片20由聚對萘二甲酸乙二酯薄片所構成時，將加熱時的溫度設定為160~180℃。
此外，在上述實施形態中，藉由密閉蓋件構件62形成密閉環境，但是本發明並非限定於此。例如，如圖6(a)所示，使晶圓10連同薄片20一起保持在具有大於薄片20的吸附吸盤91的吸盤平台90，以薄膜狀構件100覆蓋吸附吸盤91的上面全體，使其由吸附吸盤91作用負壓Vm，藉此將包含晶圓10的薄膜狀構件100的內側形成為密閉環境，可將該密閉環境內的空間減壓。接著，以在圖6(b)中顯示為部分放大剖面圖所示，亦可藉由具備未圖示的加熱手段的滾輪110，一邊將薄片20加熱成所希望的溫度，一邊由薄膜狀構件100之上按壓晶圓10的背面10b全體，藉此實施本發明之薄片熱壓接工程。
在上述實施形態中，係說明將本發明之背面加工工程適用在將晶圓的背面進行研削的研削加工之例，但是本發明並非限定於此，亦可將本發明之背面加工工程適用在將晶圓的背面進行研磨的研磨加工，可達成與上述實施形態相同的作用效果。
10‧‧‧晶圓 10a‧‧‧表面 10b‧‧‧背面 10c‧‧‧外周 12‧‧‧元件 14‧‧‧分割預定線 16‧‧‧凸塊 20‧‧‧薄片 20a‧‧‧上面 20b‧‧‧背面 22‧‧‧凸起部 40‧‧‧支持平台 42‧‧‧電氣加熱器 50‧‧‧基台 52‧‧‧吸引孔 60‧‧‧熱壓接裝置 62‧‧‧密閉蓋件構件 62a‧‧‧上壁 62b‧‧‧側壁 62c‧‧‧開口 62d‧‧‧密封構造 62e‧‧‧彈性密封構件 64‧‧‧按壓構件 64a‧‧‧支持軸 64b‧‧‧按壓板 70‧‧‧研削裝置 71‧‧‧吸盤平台 71a‧‧‧吸附吸盤 72‧‧‧研削單元 74‧‧‧旋轉心軸 76‧‧‧安裝機 78‧‧‧研削輪 78a‧‧‧研削砥石 80‧‧‧剝離用吸盤平台 80a‧‧‧吸附吸盤 90‧‧‧吸盤平台 91‧‧‧吸附吸盤 100‧‧‧薄膜狀構件 110‧‧‧滾輪 S‧‧‧內部空間 Vm‧‧‧負壓 W‧‧‧一體化單元 R1、R2‧‧‧箭號
圖1係顯示晶圓配設工程的實施態樣的分解斜視圖。 圖2係顯示薄片熱壓接工程的實施態樣的側面圖。 圖3係藉由圖2所示之薄片熱壓接工程所得的一體化單元的側面圖及部分放大剖面圖。 圖4係顯示本實施形態中的背面加工工程的實施態樣的斜視圖。 圖5係顯示剝離工程的斜視圖。 圖6(a)係顯示薄片熱壓接工程之其他實施形態的斜視圖、及(b)部分放大剖面圖。
10‧‧‧晶圓
20‧‧‧薄片
40‧‧‧支持平台
42‧‧‧電氣加熱器
50‧‧‧基台
52‧‧‧吸引孔
60‧‧‧熱壓接裝置
62‧‧‧密閉蓋件構件
62a‧‧‧上壁
62b‧‧‧側壁
62c‧‧‧開口
62d‧‧‧密封構造
62e‧‧‧彈性密封構件
64‧‧‧按壓構件
64a‧‧‧支持軸
64b‧‧‧按壓板
S‧‧‧內部空間
W‧‧‧一體化單元

Claims (8)

  1. 一種晶圓的加工方法，其係將複數元件藉由彼此交叉的複數分割預定線予以區劃而形成在表面的晶圓的背面進行加工的晶圓的加工方法，其係具備： 晶圓配設工程，其係在上面形成為平坦的支持平台的該上面舖設與晶圓的形狀為同等以上的大小的聚烯烴系薄片、或聚酯系薄片的任一者，在該薄片的上面定位晶圓的表面來進行配設； 薄片熱壓接工程，其係在實施該晶圓配設工程之後，將透過該薄片而配設在該支持平台的晶圓在密閉環境內減壓而將該薄片加熱，且按壓晶圓而在該薄片壓接晶圓，並且將圍繞該晶圓的凸起部形成在該晶圓的外周； 背面加工工程，其係在實施該薄片熱壓接工程之後，在晶圓的背面施行加工；及 剝離工程，其係在實施該背面加工工程之後，將晶圓由該薄片剝離。
  2. 如申請專利範圍第1項之晶圓的加工方法，其中，該支持平台係包含加熱手段，在該薄片熱壓接工程中，該支持平台以該加熱手段被加熱。
  3. 如申請專利範圍第1項或第2項之晶圓的加工方法，其中，該支持平台的上面係以氟樹脂被覆。
  4. 如申請專利範圍第1項之晶圓的加工方法，其中，在該背面加工工程中，實施將晶圓的背面研削的研削加工。
  5. 如申請專利範圍第1項之晶圓的加工方法，其中，該聚烯烴系的薄片係選自由聚乙烯薄片、聚丙烯薄片及聚苯乙烯薄片所成群組。
  6. 如申請專利範圍第5項之晶圓的加工方法，其中，選擇聚烯烴系的薄片作為該薄片時的該薄片熱壓接工程中的該薄片的加熱溫度，若以聚乙烯薄片構成該薄片，係120~140℃，若以聚丙烯薄片構成該薄片，係160~180℃，若以聚苯乙烯薄片構成該薄片，係220~240℃。
  7. 如申請專利範圍第1項之晶圓的加工方法，其中，該聚酯系的薄片係選自由聚對苯二甲酸乙二酯薄片及聚對萘二甲酸乙二酯薄片所成群組。
  8. 如申請專利範圍第7項之晶圓的加工方法，其中，選擇聚酯系的薄片作為該薄片時的該薄片熱壓接工程中的該薄片的加熱溫度，若以聚對苯二甲酸乙二酯薄片構成該薄片，係250~270℃，若以聚對萘二甲酸乙二酯薄片構成該薄片，係160~180℃。
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