CN114914260B - 光电转换装置以及照相机 - Google Patents

光电转换装置以及照相机

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Publication number
CN114914260B
CN114914260B CN202210517086.XA CN202210517086A CN114914260B CN 114914260 B CN114914260 B CN 114914260B CN 202210517086 A CN202210517086 A CN 202210517086A CN 114914260 B CN114914260 B CN 114914260B
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China
Prior art keywords
photoelectric conversion
region
transistor
conversion device
conversion element
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CN202210517086.XA
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English (en)
Chinese (zh)
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CN114914260A (zh
Inventor
浮贺谷信贵
桑原英司
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/63—Control of cameras or camera modules by using electronic viewfinders
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/76—Television signal recording
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
CN202210517086.XA 2016-03-31 2017-03-29 光电转换装置以及照相机 Active CN114914260B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-072989 2016-03-31
JP2016072989A JP6789653B2 (ja) 2016-03-31 2016-03-31 光電変換装置およびカメラ
CN201710197850.9A CN107275352B (zh) 2016-03-31 2017-03-29 光电转换装置以及照相机

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CN114914260B true CN114914260B (zh) 2026-04-17

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US (4) US10553634B2 (enExample)
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CN (2) CN114914260B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6789653B2 (ja) * 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
KR102498582B1 (ko) * 2018-02-26 2023-02-14 에스케이하이닉스 주식회사 파티션 패턴들을 가진 이미지 센서
JP2019165066A (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
US10893222B2 (en) * 2018-03-29 2021-01-12 Panasonic Intellectual Property Management Co., Ltd. Imaging device and camera system, and driving method of imaging device
JP2019212900A (ja) 2018-05-31 2019-12-12 パナソニックＩｐマネジメント株式会社 撮像装置
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102674895B1 (ko) 2018-10-08 2024-06-14 삼성전자주식회사 이미지 센서 및 이의 제조 방법
TWI842804B (zh) * 2019-02-01 2024-05-21 日商索尼半導體解決方案公司 受光元件、固體攝像裝置及測距裝置
JP2020162100A (ja) 2019-03-28 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距モジュール
JP2020161779A (ja) * 2019-03-28 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距モジュール
KR102358599B1 (ko) * 2019-09-30 2022-02-08 선전 구딕스 테크놀로지 컴퍼니, 리미티드 이미지 센서의 반도체 구조, 칩 및 전자 장치
JP7433863B2 (ja) 2019-11-27 2024-02-20 キヤノン株式会社 光電変換装置、撮像システム、および移動体
US12019966B1 (en) * 2020-09-03 2024-06-25 Synopsys, Inc. Virtual isolated pattern layer: isolated pattern recognition, extraction and compression
US12356740B2 (en) * 2020-09-25 2025-07-08 Apple Inc. Transistor integration with stacked single-photon avalanche diode (SPAD) pixel arrays
KR102889848B1 (ko) * 2020-12-16 2025-11-27 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2022112240A (ja) * 2021-01-21 2022-08-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
US12563912B2 (en) * 2021-04-13 2026-02-24 Canon Kabushiki Kaisha Light-emitting element, light-emitting device, photoelectric conversion device, and electronic device
JP7797140B2 (ja) * 2021-08-27 2026-01-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2026110615A1 (ja) * 2024-11-19 2026-05-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110033780A (ko) * 2009-09-25 2011-03-31 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
CN102376726A (zh) * 2010-08-09 2012-03-14 索尼公司 固态摄像器件、其制造方法和电子装置
CN103824869A (zh) * 2014-03-17 2014-05-28 北京思比科微电子技术股份有限公司 一种防止图像弥散的图像传感器像素结构及其制造方法

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263266A (ja) 1985-05-17 1986-11-21 Olympus Optical Co Ltd 固体撮像装置
US6388305B1 (en) * 1999-12-17 2002-05-14 International Business Machines Corporation Electrically programmable antifuses and methods for forming the same
KR20040031119A (ko) * 2002-10-04 2004-04-13 (주)그래픽테크노재팬 화소격리영역을 갖는 이미지 센서
JP4539176B2 (ja) * 2004-05-31 2010-09-08 ソニー株式会社 固体撮像素子及びその製造方法
US7605415B2 (en) * 2004-06-07 2009-10-20 Canon Kabushiki Kaisha Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring
JP4742523B2 (ja) 2004-06-14 2011-08-10 ソニー株式会社 固体撮像素子及びその駆動方法
JP4756839B2 (ja) * 2004-09-01 2011-08-24 キヤノン株式会社 固体撮像装置及びカメラ
US8049293B2 (en) * 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
JP4578329B2 (ja) * 2005-06-03 2010-11-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2007095917A (ja) * 2005-09-28 2007-04-12 Matsushita Electric Ind Co Ltd 固体撮像装置
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
JP5328207B2 (ja) * 2008-04-01 2013-10-30 キヤノン株式会社 固体撮像装置
JP5314914B2 (ja) 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP2009272596A (ja) 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
EP2109143B1 (en) 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
JP4759590B2 (ja) * 2008-05-09 2011-08-31 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5353201B2 (ja) 2008-11-21 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
JP5558857B2 (ja) * 2009-03-09 2014-07-23 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5470928B2 (ja) 2009-03-11 2014-04-16 ソニー株式会社 固体撮像装置の製造方法
JP2010225818A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP5539105B2 (ja) * 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5564909B2 (ja) 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5679653B2 (ja) * 2009-12-09 2015-03-04 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5501379B2 (ja) * 2009-12-26 2014-05-21 キヤノン株式会社 固体撮像装置および撮像システム
FR2955701A1 (fr) * 2010-01-28 2011-07-29 St Microelectronics Sa Structure compacte de capteur d'image
JP2011159757A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器
KR101738532B1 (ko) * 2010-05-25 2017-05-22 삼성전자 주식회사 상부 고농도 ｐ 영역을 포함하는 후면 조사형 이미지 센서 및 그 제조 방법
JP2012015274A (ja) * 2010-06-30 2012-01-19 Canon Inc 固体撮像装置、及び固体撮像装置の製造方法。
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
JP2012164768A (ja) * 2011-02-04 2012-08-30 Toshiba Corp 固体撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5999402B2 (ja) * 2011-08-12 2016-09-28 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP6003291B2 (ja) * 2011-08-22 2016-10-05 ソニー株式会社 固体撮像装置及び電子機器
JP5743837B2 (ja) * 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
US8686342B2 (en) * 2012-04-09 2014-04-01 Omnivision Technologies, Inc. Double-sided image sensor formed on a single semiconductor wafer die
KR20140006370A (ko) * 2012-07-04 2014-01-16 삼성전자주식회사 반도체 소자
JP2014022561A (ja) * 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
US9142580B2 (en) * 2012-08-10 2015-09-22 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system
JP2014086514A (ja) * 2012-10-22 2014-05-12 Canon Inc 撮像装置、その製造方法及びカメラ
US9659991B2 (en) * 2012-10-22 2017-05-23 Canon Kabushiki Kaisha Image capturing apparatus, manufacturing method thereof, and camera
US9165959B2 (en) * 2013-02-25 2015-10-20 Omnivision Technologies, Inc. Image sensor with pixel units having mirrored transistor layout
JP6278608B2 (ja) * 2013-04-08 2018-02-14 キヤノン株式会社 半導体装置およびその製造方法
JP2014225536A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
US20150054997A1 (en) * 2013-08-23 2015-02-26 Aptina Imaging Corporation Image sensors having pixel arrays with non-uniform pixel sizes
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP6305030B2 (ja) 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法
JP6282109B2 (ja) * 2013-12-26 2018-02-21 キヤノン株式会社 撮像装置の製造方法および撮像装置
JP6152060B2 (ja) 2014-02-14 2017-06-21 キヤノン株式会社 固体撮像装置及びカメラ
KR102209097B1 (ko) 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102212138B1 (ko) * 2014-08-19 2021-02-04 삼성전자주식회사 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이
US9711558B2 (en) * 2014-09-12 2017-07-18 Panasonic Intellectual Property Management Co., Ltd. Imaging device with photoelectric converter
JP2016187018A (ja) * 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
US9768213B2 (en) * 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
US9653511B2 (en) * 2015-08-11 2017-05-16 Omnivision Technologies, Inc. CMOS image sensor with peninsular ground contracts and method of manufacturing the same
KR102481481B1 (ko) * 2015-12-15 2022-12-26 삼성전자 주식회사 이미지 센서 및 그 제조 방법
JP6789653B2 (ja) * 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
JP6808348B2 (ja) * 2016-04-28 2021-01-06 キヤノン株式会社 光電変換装置およびカメラ
JP7013119B2 (ja) * 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
KR102589016B1 (ko) * 2016-08-25 2023-10-16 삼성전자주식회사 반도체 소자
KR102717094B1 (ko) * 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
KR102701855B1 (ko) * 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
US10079261B1 (en) * 2017-08-17 2018-09-18 Omnivision Technologies, Inc. Raised electrode to reduce dark current
US10566380B2 (en) * 2017-10-18 2020-02-18 Omnivision Technologies, Inc. Image sensor with dual trench isolation structures at different isolation structure depths
KR102542614B1 (ko) * 2017-10-30 2023-06-15 삼성전자주식회사 이미지 센서
US11329089B1 (en) * 2019-06-07 2022-05-10 Gigajot Technology, Inc. Image sensor with multi-patterned isolation well
US11355537B2 (en) * 2019-10-16 2022-06-07 Omnivision Technologies, Inc. Vertical gate structure and layout in a CMOS image sensor
KR102886847B1 (ko) * 2020-12-18 2025-11-14 삼성전자주식회사 이미지 센서 및 이미지 센싱 회로
FR3122057B1 (fr) * 2021-04-15 2025-01-10 Pyxalis Matrice de Pixel à sommation analogique à obturation globale

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110033780A (ko) * 2009-09-25 2011-03-31 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
CN102376726A (zh) * 2010-08-09 2012-03-14 索尼公司 固态摄像器件、其制造方法和电子装置
CN103824869A (zh) * 2014-03-17 2014-05-28 北京思比科微电子技术股份有限公司 一种防止图像弥散的图像传感器像素结构及其制造方法

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