CN1143387C - 带有静电放电保护结构的减少了电容的晶体管及其制造方法 - Google Patents

带有静电放电保护结构的减少了电容的晶体管及其制造方法 Download PDF

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Publication number
CN1143387C
CN1143387C CNB988123843A CN98812384A CN1143387C CN 1143387 C CN1143387 C CN 1143387C CN B988123843 A CNB988123843 A CN B988123843A CN 98812384 A CN98812384 A CN 98812384A CN 1143387 C CN1143387 C CN 1143387C
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CN
China
Prior art keywords
region
drain
transistor
substrate
well
Prior art date
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Expired - Fee Related
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CNB988123843A
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English (en)
Chinese (zh)
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CN1282449A (zh
Inventor
Mj
M·J·阿伦
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Intel Corp
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Intel Corp
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Publication of CN1282449A publication Critical patent/CN1282449A/zh
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Publication of CN1143387C publication Critical patent/CN1143387C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB988123843A 1997-12-18 1998-10-27 带有静电放电保护结构的减少了电容的晶体管及其制造方法 Expired - Fee Related CN1143387C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/993,441 US5847431A (en) 1997-12-18 1997-12-18 Reduced capacitance transistor with electro-static discharge protection structure
US08/993441 1997-12-18

Publications (2)

Publication Number Publication Date
CN1282449A CN1282449A (zh) 2001-01-31
CN1143387C true CN1143387C (zh) 2004-03-24

Family

ID=25539554

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988123843A Expired - Fee Related CN1143387C (zh) 1997-12-18 1998-10-27 带有静电放电保护结构的减少了电容的晶体管及其制造方法

Country Status (7)

Country Link
US (1) US5847431A (enExample)
EP (1) EP1042808B1 (enExample)
JP (1) JP2002509358A (enExample)
KR (2) KR100477950B1 (enExample)
CN (1) CN1143387C (enExample)
AU (1) AU1202199A (enExample)
WO (1) WO1999031729A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534867B1 (en) * 1999-09-27 2003-03-18 Kabushiki Kaisha Toshiba Semiconductor device, semiconductor element and method for producing same
CN106158832A (zh) * 2015-04-01 2016-11-23 联华电子股份有限公司 半导体结构

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876480A (en) * 1972-08-28 1975-04-08 Motorola Inc Method of manufacturing high speed, isolated integrated circuit
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
FR2598852B1 (fr) * 1986-05-16 1988-10-21 Eurotechnique Sa Dispositif de protection d'entree pour circuits integres en technologie cmos.
NL8900593A (nl) * 1989-03-13 1990-10-01 Philips Nv Halfgeleiderinrichting met een beveiligingsschakeling.
US5121179A (en) * 1990-10-08 1992-06-09 Seiko Epson Corporation Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
JPH03174763A (ja) * 1989-12-04 1991-07-29 Hitachi Ltd 半導体装置
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
DE4334515C1 (de) * 1993-10-09 1994-10-20 Itt Ind Gmbh Deutsche Verpolungsschutz für integrierte elektronische Schaltkreise in CMOS-Technik
JP3493713B2 (ja) * 1994-03-04 2004-02-03 松下電器産業株式会社 半導体装置
JPH07321303A (ja) * 1994-05-19 1995-12-08 Kobe Steel Ltd Ｍｏｓ型半導体装置及びその製造方法
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
CN1099713C (zh) * 1995-04-06 2003-01-22 工业技术研究院 用n边多边形单元布线的mos单元、多单元晶体管及ic芯片
JPH0936357A (ja) * 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5623787A (en) * 1996-01-05 1997-04-29 Ali; Elsayed A. Tile roof valley guard

Also Published As

Publication number Publication date
KR100477950B1 (ko) 2005-03-22
EP1042808A4 (en) 2001-02-07
KR20010033125A (ko) 2001-04-25
EP1042808A1 (en) 2000-10-11
EP1042808B1 (en) 2008-07-30
CN1282449A (zh) 2001-01-31
JP2002509358A (ja) 2002-03-26
KR20030048485A (ko) 2003-06-19
AU1202199A (en) 1999-07-05
US5847431A (en) 1998-12-08
WO1999031729A1 (en) 1999-06-24
KR100395345B1 (ko) 2003-08-21

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Granted publication date: 20040324

Termination date: 20171027