JP2002509358A - 静電放電保護構造を備えた低静電容量トランジスタおよびその製造方法 - Google Patents

静電放電保護構造を備えた低静電容量トランジスタおよびその製造方法

Info

Publication number
JP2002509358A
JP2002509358A JP2000539527A JP2000539527A JP2002509358A JP 2002509358 A JP2002509358 A JP 2002509358A JP 2000539527 A JP2000539527 A JP 2000539527A JP 2000539527 A JP2000539527 A JP 2000539527A JP 2002509358 A JP2002509358 A JP 2002509358A
Authority
JP
Japan
Prior art keywords
region
transistor
substrate
forming
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000539527A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002509358A5 (enExample
Inventor
アレン，マイケル・ジェイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2002509358A publication Critical patent/JP2002509358A/ja
Publication of JP2002509358A5 publication Critical patent/JP2002509358A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000539527A 1997-12-18 1998-10-27 静電放電保護構造を備えた低静電容量トランジスタおよびその製造方法 Pending JP2002509358A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/993,441 US5847431A (en) 1997-12-18 1997-12-18 Reduced capacitance transistor with electro-static discharge protection structure
US08/993,441 1997-12-18
PCT/US1998/022754 WO1999031729A1 (en) 1997-12-18 1998-10-27 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same

Publications (2)

Publication Number Publication Date
JP2002509358A true JP2002509358A (ja) 2002-03-26
JP2002509358A5 JP2002509358A5 (enExample) 2006-01-05

Family

ID=25539554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000539527A Pending JP2002509358A (ja) 1997-12-18 1998-10-27 静電放電保護構造を備えた低静電容量トランジスタおよびその製造方法

Country Status (7)

Country Link
US (1) US5847431A (enExample)
EP (1) EP1042808B1 (enExample)
JP (1) JP2002509358A (enExample)
KR (2) KR100395345B1 (enExample)
CN (1) CN1143387C (enExample)
AU (1) AU1202199A (enExample)
WO (1) WO1999031729A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534867B1 (en) * 1999-09-27 2003-03-18 Kabushiki Kaisha Toshiba Semiconductor device, semiconductor element and method for producing same
CN106158832A (zh) * 2015-04-01 2016-11-23 联华电子股份有限公司 半导体结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324656A (ja) * 1986-05-16 1988-02-02 トムソン・スミコンデユクトウ−ル Ｃｍｏｓテクノロジイ集積回路用入力保護デバイス
JPH03174763A (ja) * 1989-12-04 1991-07-29 Hitachi Ltd 半導体装置
JPH07245380A (ja) * 1994-03-04 1995-09-19 Matsushita Electric Ind Co Ltd 半導体装置
JPH07321303A (ja) * 1994-05-19 1995-12-08 Kobe Steel Ltd Ｍｏｓ型半導体装置及びその製造方法
JPH0936357A (ja) * 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876480A (en) * 1972-08-28 1975-04-08 Motorola Inc Method of manufacturing high speed, isolated integrated circuit
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
NL8900593A (nl) * 1989-03-13 1990-10-01 Philips Nv Halfgeleiderinrichting met een beveiligingsschakeling.
US5121179A (en) * 1990-10-08 1992-06-09 Seiko Epson Corporation Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
DE4334515C1 (de) * 1993-10-09 1994-10-20 Itt Ind Gmbh Deutsche Verpolungsschutz für integrierte elektronische Schaltkreise in CMOS-Technik
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
WO1996031907A1 (en) * 1995-04-06 1996-10-10 Industrial Technology Research Institute N-sided polygonal cell lay-out for multiple cell transistor
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5623787A (en) * 1996-01-05 1997-04-29 Ali; Elsayed A. Tile roof valley guard

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324656A (ja) * 1986-05-16 1988-02-02 トムソン・スミコンデユクトウ−ル Ｃｍｏｓテクノロジイ集積回路用入力保護デバイス
JPH03174763A (ja) * 1989-12-04 1991-07-29 Hitachi Ltd 半導体装置
JPH07245380A (ja) * 1994-03-04 1995-09-19 Matsushita Electric Ind Co Ltd 半導体装置
JPH07321303A (ja) * 1994-05-19 1995-12-08 Kobe Steel Ltd Ｍｏｓ型半導体装置及びその製造方法
JPH0936357A (ja) * 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR100477950B1 (ko) 2005-03-22
WO1999031729A1 (en) 1999-06-24
EP1042808B1 (en) 2008-07-30
CN1143387C (zh) 2004-03-24
CN1282449A (zh) 2001-01-31
KR100395345B1 (ko) 2003-08-21
US5847431A (en) 1998-12-08
EP1042808A4 (en) 2001-02-07
KR20010033125A (ko) 2001-04-25
EP1042808A1 (en) 2000-10-11
KR20030048485A (ko) 2003-06-19
AU1202199A (en) 1999-07-05

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