CN113272940B - 基板处理装置、半导体装置的制造方法以及加热器单元 - Google Patents
基板处理装置、半导体装置的制造方法以及加热器单元 Download PDFInfo
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- CN113272940B CN113272940B CN201980088050.0A CN201980088050A CN113272940B CN 113272940 B CN113272940 B CN 113272940B CN 201980088050 A CN201980088050 A CN 201980088050A CN 113272940 B CN113272940 B CN 113272940B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 73
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1931—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of one space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Remote Sensing (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-000743 | 2019-01-07 | ||
| JP2019000743 | 2019-01-07 | ||
| PCT/JP2019/051203 WO2020145183A1 (ja) | 2019-01-07 | 2019-12-26 | 基板処理装置、半導体装置の製造方法およびヒータユニット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113272940A CN113272940A (zh) | 2021-08-17 |
| CN113272940B true CN113272940B (zh) | 2024-03-26 |
Family
ID=71521262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980088050.0A Active CN113272940B (zh) | 2019-01-07 | 2019-12-26 | 基板处理装置、半导体装置的制造方法以及加热器单元 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20210313205A1 (ko) |
| JP (1) | JP7117398B2 (ko) |
| KR (1) | KR102608535B1 (ko) |
| CN (1) | CN113272940B (ko) |
| WO (1) | WO2020145183A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7236420B2 (ja) | 2020-10-29 | 2023-03-09 | 株式会社Kokusai Electric | 温度センサ、ヒータユニット、基板処理装置及び半導体装置の製造方法 |
| CN117837268A (zh) * | 2021-08-12 | 2024-04-05 | Sabic环球技术有限责任公司 | 包括带有电动加热元件的加热区的炉以及相关方法 |
| KR20230031015A (ko) | 2021-08-26 | 2023-03-07 | 주식회사 이뮨메드 | 자가면역질환의 예방 또는 치료를 위한 항체의약품 |
| CN117999639A (zh) * | 2021-12-06 | 2024-05-07 | 株式会社国际电气 | 顶部加热器、半导体装置的制造方法、基板处理方法以及基板处理装置 |
| CN114253316B (zh) * | 2021-12-21 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 管路控温设备和管路控温方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3009204B2 (ja) * | 1990-10-30 | 2000-02-14 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP2002261022A (ja) * | 2001-02-28 | 2002-09-13 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2004119804A (ja) * | 2002-09-27 | 2004-04-15 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| KR20050091691A (ko) * | 2005-02-01 | 2005-09-15 | 도쿄 엘렉트론 가부시키가이샤 | 열처리 방법 및 열처리 장치 |
| JP2009117798A (ja) * | 2007-10-19 | 2009-05-28 | Hitachi Kokusai Electric Inc | 温度制御方法、温度補正値取得方法、半導体製造方法、基板処理装置 |
| WO2014046242A1 (ja) * | 2012-09-24 | 2014-03-27 | 株式会社日立国際電気 | 温度測定器および基板処理装置ならびに温度制御方法および半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127477U (ko) * | 1976-03-25 | 1977-09-28 | ||
| JP2595284B2 (ja) * | 1988-02-18 | 1997-04-02 | 東京エレクトロン株式会社 | 成膜装置 |
| JP4358915B2 (ja) * | 1997-03-21 | 2009-11-04 | 株式会社日立国際電気 | 半導体製造システム |
| JP6080451B2 (ja) * | 2012-09-25 | 2017-02-15 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、及び熱電対支持体 |
| JP6194298B2 (ja) * | 2014-09-09 | 2017-09-06 | 日本フェンオール株式会社 | 温度検出装置 |
| WO2018100850A1 (ja) * | 2016-12-01 | 2018-06-07 | 株式会社日立国際電気 | 基板処理装置、天井ヒータおよび半導体装置の製造方法 |
-
2019
- 2019-12-26 KR KR1020217017798A patent/KR102608535B1/ko active IP Right Grant
- 2019-12-26 CN CN201980088050.0A patent/CN113272940B/zh active Active
- 2019-12-26 WO PCT/JP2019/051203 patent/WO2020145183A1/ja active Application Filing
- 2019-12-26 JP JP2020565714A patent/JP7117398B2/ja active Active
-
2021
- 2021-06-16 US US17/349,600 patent/US20210313205A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3009204B2 (ja) * | 1990-10-30 | 2000-02-14 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP2002261022A (ja) * | 2001-02-28 | 2002-09-13 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2004119804A (ja) * | 2002-09-27 | 2004-04-15 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| KR20050091691A (ko) * | 2005-02-01 | 2005-09-15 | 도쿄 엘렉트론 가부시키가이샤 | 열처리 방법 및 열처리 장치 |
| JP2009117798A (ja) * | 2007-10-19 | 2009-05-28 | Hitachi Kokusai Electric Inc | 温度制御方法、温度補正値取得方法、半導体製造方法、基板処理装置 |
| WO2014046242A1 (ja) * | 2012-09-24 | 2014-03-27 | 株式会社日立国際電気 | 温度測定器および基板処理装置ならびに温度制御方法および半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7117398B2 (ja) | 2022-08-12 |
| US20210313205A1 (en) | 2021-10-07 |
| JPWO2020145183A1 (ja) | 2021-10-21 |
| CN113272940A (zh) | 2021-08-17 |
| KR20210083361A (ko) | 2021-07-06 |
| KR102608535B1 (ko) | 2023-11-30 |
| WO2020145183A1 (ja) | 2020-07-16 |
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