CN112207463B - 激光加工装置 - Google Patents

激光加工装置 Download PDF

Info

Publication number
CN112207463B
CN112207463B CN202010645562.7A CN202010645562A CN112207463B CN 112207463 B CN112207463 B CN 112207463B CN 202010645562 A CN202010645562 A CN 202010645562A CN 112207463 B CN112207463 B CN 112207463B
Authority
CN
China
Prior art keywords
workpiece
unit
height position
wafer
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010645562.7A
Other languages
English (en)
Other versions
CN112207463A (zh
Inventor
植木笃
小林豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN112207463A publication Critical patent/CN112207463A/zh
Application granted granted Critical
Publication of CN112207463B publication Critical patent/CN112207463B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68309—Auxiliary support including alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

提供激光加工装置，计算与改质层的高度位置对应的聚光透镜的适当的高度位置。控制单元的计算部使用设定部所设定的改质层的高度值(H1)和以下的(1)式来计算聚光透镜(183)的高度位置(Defocus)。Defocus＝(晶片1的厚度T1‑高度值H1‑b)/a▪▪(1)，即，根据设定部所设定的改质层的高度值(H1)，计算部能够使用(1)式来计算聚光透镜(183)的适当的高度位置。因此，不需要实施首先根据空气与晶片(1)的折射率之比来大致求出聚光透镜的高度位置，之后根据预先实施的实验结果对该高度位置进行微调整这两个阶段的调整。因此，能够更容易地决定聚光透镜的高度位置。并且，不需要实施用于微调整的麻烦的实验。

Description

激光加工装置
技术领域
本发明涉及激光加工装置。
背景技术
存在如下的激光加工方法：使对于板状的被加工物具有透过性的波长的激光光线从被加工物的上表面侧入射，将激光光线的聚光点定位在被加工物的内部，使聚光点沿着分割预定线移动，在被加工物的内部形成改质层。在该方法中，希望将聚光点定位在距被加工物的下表面一定高度的位置。
因此，在加工前对被加工物的厚度进行测定，根据测定结果来决定用于形成改质层的聚光透镜的高度。例如，在专利文献1～4中公开了被加工物的厚度的测定。
专利文献1：日本特开2011-143488号公报
专利文献2：日本特开2011-151299号公报
专利文献3：日本特开2018-063148号公报
专利文献4：日本特开2010-048715号公报
公知在被加工物是硅的情况下，硅与空气的折射率的比约为4(实际上为3.7)，因此，透过聚光透镜的激光光线的聚光点在被加工物内移动相当于聚光透镜的移动量的约4倍的距离。
因此，在改质层的形成中，首先，求出从被加工物的上表面到改质层的形成预定位置的距离。然后，使聚光透镜从聚光点位于被加工物的上表面的位置按照该距离的1/4的量靠近被加工物。在该状态下，通过对被加工物照射激光光线而形成改质层。
但是，在以往的方法中，当被加工物的厚度存在一些差异时，所形成的改质层的高度位置会在上下方向上偏移。
并且，在上述方法中，当考虑到被加工物的折射率而使聚光透镜移动时，以激光光线的聚光点在被加工物内移动相当于聚光透镜的移动量的4倍的距离为前提。但是，聚光点并不一定移动相当于聚光透镜的移动距离的4倍的距离。因此，在以往的方法中，需要实施在被加工物内形成改质层的实验并根据实验结果对聚光透镜的位置进行微调整的作业。因此，要想能够在距被加工物的下表面规定的高度的位置形成改质层，需要花费时间。
发明内容
因此，本发明的目的在于，提供在设定了被加工物中的改质层的形成位置(距被加工物的下表面规定的高度位置)之后，能够计算与该高度位置对应的聚光透镜的适当的高度位置的激光加工装置。
根据本发明，提供激光加工装置，该激光加工装置具有：加工单元，其将利用聚光透镜使对于被加工物具有透过性的波长的激光光线聚光而得的聚光点定位在被加工物的内部，通过该聚光点在被加工物的内部形成改质层；卡盘工作台，其具有对被加工物进行保持的保持面；加工进给单元，其将该卡盘工作台和该加工单元在与该保持面平行的方向上相对地进行加工进给；升降构件，其使该聚光透镜在与该保持面垂直的方向上移动；以及控制单元，该控制单元包含：设定部，其设定规定的高度位置的距离下表面的高度值，使得在被加工物的内部的从下表面起的该规定的高度位置形成改质层；以及计算部，其使用该设定部所设定的该高度值以及包含常数a和常数b的以下的(1)式来计算该聚光透镜的高度位置(Defocus)，
Defocus＝(被加工物的厚度-高度值-b)/a·· (1)
该计算部一边使该聚光透镜的聚光点从被加工物的上表面阶段性地下降，一边将该聚光透镜定位在高度不同的至少2个点处，在被加工物中形成深度不同的至少2个改质层，在设从改质层到被加工物的上表面的距离(Depth)为纵轴、设该聚光透镜的高度位置(Defocus)为横轴的坐标系中，绘制与该至少2个改质层对应的点，求出通过与各改质层对应的点的近似直线的以下的(2)式所示的一次函数中的作为斜率的常数a和作为截距的常数b，
Depth＝a×Defocus+b·· (2)
通过将该(2)式应用在与从改质层到被加工物的上表面的距离(Depth)相关的以下的(3)式中，求出所述(1)式，
Depth＝被加工物的厚度-高度值·· (3)
通过所述升降构件使该聚光透镜移动到由所述(1)式求出的Defocus的位置，从而在该设定部所设定的从被加工物的下表面起的高度位置形成改质层。
优选所述计算部根据从改质层到被加工物的上表面的距离(Depth)来切换在所述(1)式中使用的该常数a和该常数b。
根据本发明，计算部能够根据设定部所设定的改质层的高度值，使用(1)式来计算聚光透镜的适当的高度位置(Defocus)。因此，不需要实施首先根据空气与被加工物的折射率之比来大致求出聚光透镜的高度位置，之后根据预先实施的实验结果对该聚光透镜的高度位置进行微调整这两个阶段的调整。因此，能够更容易地决定激光加工中的聚光透镜的高度位置。此外，也不需要实施用于微调整的麻烦的实验。
计算部也可以根据从要形成的改质层到被加工物的上表面的距离(Depth)来切换在(1)式中使用的常数a和常数b。由此，能够提高(1)式的精度，因此，能够更准确地计算聚光透镜的高度位置(Defocus)。
附图说明
图1是示出本发明实施方式的激光加工装置的结构的立体图。
图2是示出被加工物单元的分割预定线和激光单元的立体图。
图3是示出激光单元的结构的立体图。
图4是示出控制单元的结构的框图。
图5的(a)和图5的(b)是示出图1所示的激光加工装置的激光加工的动作的示意图。
图6是示出聚光透镜的高度位置(Defocus)与改质层的深度(Depth)的关系的曲线图。
图7是仅与图6所示的曲线图中的Defocus＝-6μm～-34μm的第1范围相关的曲线图。
图8是仅与图6所示的曲线图中的Defocus＝-90μm～-120μm的第2范围相关的曲线图。
标号说明
1：晶片；F：环状框架；S：粘接带；W：被加工物单元；10：激光加工装置；11：基台；13：立壁部；14：卡盘工作台移动机构；15：臂部；20：分度进给单元；30：加工进给单元；50：升降部件；43：卡盘工作台；43a：保持面；61：控制单元；62：存储部；63：设定部；64：计算部；12：激光单元；16：厚度测定构件；17：上表面高度测定构件；18：加工单元；181：聚光器；182：致动器；183：聚光透镜。
具体实施方式
如图1所示，本实施方式的激光加工装置10具有：长方体状的基台11；立壁部13，其竖立设置在基台11的一端；以及卡盘工作台部40，其配设在基台11上。
卡盘工作台部40被用于保持大致圆形状的晶片1。如图1所示，作为被加工物的晶片1作为包含环状框架F、粘接带S以及晶片1的被加工物单元W而被保持于卡盘工作台部40。晶片1具有格子状的分割预定线M。在由分割预定线M划分的各区域中形成有器件(未图示)。通过沿着分割预定线M对晶片1进行分割，能够形成芯片。
卡盘工作台部40具有：作为保持构件的卡盘工作台43，其具有对晶片1进行保持的保持面43a；夹具部45，其设置在卡盘工作台43的周围；以及θ工作台47，其对卡盘工作台43进行支承。
θ工作台47以能够在XY平面内旋转的方式设置于X轴工作台32的上表面。卡盘工作台43形成为圆板状，设置在θ工作台47上。
在卡盘工作台43的上表面形成有用于吸附保持晶片1的含有多孔陶瓷材料的保持面43a。该保持面43a与吸引源(未图示)连通。在卡盘工作台43的周围设置有包含支承臂的4个夹具部45。4个夹具部45被空气致动器(未图示)驱动而从四周对卡盘工作台43所保持的晶片1的周围的环状框架F进行夹持固定。
激光加工装置10的立壁部13竖立设置在卡盘工作台部40的后方。在立壁部13的前表面设置有用于使包含聚光透镜的激光单元12在Z轴方向上移动的升降部件50。
升降部件50包含：一对导轨51，它们沿Z轴方向延伸；Z轴工作台52，其载置在导轨51上；滚珠丝杠53，其与导轨51平行地延伸；以及驱动电动机55，其使滚珠丝杠53进行旋转。
一对导轨51与Z轴方向平行地配置在立壁部13的前表面。Z轴工作台52在一对导轨51上沿着这些导轨51可滑动地设置。在Z轴工作台52上安装有臂部15和激光单元12。
滚珠丝杠53与设置于Z轴工作台52的螺母部(未图示)螺合。驱动电动机55与滚珠丝杠53的一端部连结，对滚珠丝杠53进行旋转驱动。通过使滚珠丝杠53旋转驱动，Z轴工作台52、臂部15以及激光单元12沿着导轨51在Z轴方向上移动。
臂部15从Z轴工作台52向卡盘工作台部40的方向突出。激光单元12以与卡盘工作台部40的卡盘工作台43对置的方式被支承在臂部15的前端。
激光单元12是用于对晶片1进行激光加工的装置。激光单元12具有：加工单元18，其通过激光光线对卡盘工作台43所保持的晶片1进行加工；以及一对厚度测定构件16和一对上表面高度测定构件17，它们以夹着加工单元18的方式设置。
厚度测定构件16对卡盘工作台43所保持的晶片1的厚度进行测定。上表面高度测定构件17对卡盘工作台43所保持的晶片1的上表面高度进行测定。另外，晶片1的上表面高度例如是指从X轴工作台32或基台11的上表面到晶片1的上表面的高度。
并且，作为厚度测定构件16和上表面高度测定构件17，例如能够分别使用利用了专利文献1～4所公开的技术的厚度测定器和高度测定器。
如图2所示，激光单元12在被加工物单元W的晶片1的分割预定线M上沿着X轴方向相对于晶片1相对地移动。
并且，如图3所示，激光单元12的加工单元18具有聚光器181和致动器182。
聚光器181具有激光振荡器和聚光透镜，使对于晶片1具有透过性的波长的激光光线聚光在卡盘工作台43所保持的晶片1的内部。致动器182对聚光器181(聚光透镜)相对于卡盘工作台43所保持的晶片1的高度进行调整。即，致动器182是使聚光器181(聚光透镜)在与卡盘工作台43的保持面43a垂直的方向上移动的升降构件的一例。具有这种结构的加工单元18将利用聚光透镜使激光光线聚光而得的聚光点定位在晶片1的内部，通过该聚光点在晶片1的内部形成改质层。
并且，如图1所示，在基台11的上表面设置有使卡盘工作台43移动的卡盘工作台移动机构14。卡盘工作台移动机构14具有使卡盘工作台43在分度进给方向上移动的分度进给单元20和使卡盘工作台43在加工进给方向上移动的加工进给单元30。
分度进给单元20包含：一对导轨23，它们沿Y轴方向延伸；Y轴工作台24，其载置在导轨23上；滚珠丝杠25，其与导轨23平行地延伸；以及驱动电动机26，其使滚珠丝杠25进行旋转。
一对导轨23与Y轴方向平行地配置在基台11的上表面。Y轴工作台24在一对导轨23上沿着这些导轨23可滑动地设置。在Y轴工作台24上载置有加工进给单元30和卡盘工作台部40。
滚珠丝杠25与设置在Y轴工作台24的下表面侧的螺母部(未图示)螺合。驱动电动机26与滚珠丝杠25的一端部连结，对滚珠丝杠25进行旋转驱动。通过对滚珠丝杠25进行旋转驱动，Y轴工作台24、加工进给单元30以及卡盘工作台部40沿着导轨23在分度进给方向(Y轴方向)上移动。
加工进给单元30将卡盘工作台43和加工单元18在与卡盘工作台43的保持面43a平行的方向即X轴方向上相对地进行加工进给。在本实施方式中，加工进给单元30使卡盘工作台43在加工进给方向上移动。
加工进给单元30具有：一对导轨31，它们沿X轴方向延伸；X轴工作台32，其载置在导轨31上；滚珠丝杠33，其与导轨31平行地延伸；以及驱动电动机35，其使滚珠丝杠33进行旋转。一对导轨31与X轴方向平行地配置在Y轴工作台24的上表面。X轴工作台32在一对导轨31上沿着这些导轨31可滑动地设置。在X轴工作台32上载置有卡盘工作台部40。
滚珠丝杠33与设置于X轴工作台32的下表面侧的螺母部(未图示)螺合。驱动电动机35与滚珠丝杠33的一端部连结，对滚珠丝杠33进行旋转驱动。通过对滚珠丝杠33进行旋转驱动，X轴工作台32和卡盘工作台部40沿着导轨31在加工进给方向(X轴方向)上移动。
并且，激光加工装置10具有对激光加工装置10的各构成要素进行控制的控制单元61。
如图4所示，控制单元61具有：存储部62，其用于存储各种程序和数据；设定部63，其设定晶片1中的改质层的形成位置；以及计算部64，其计算聚光器181中的聚光透镜的高度位置。
接着，对激光加工装置10对晶片1的激光加工的动作进行说明。在激光加工装置10中，通过控制单元61的控制将由对于晶片1具有透过性的波长的激光光线聚光而得的聚光点定位在晶片1的内部，并相对于晶片1沿着分割预定线M相对地进行加工进给。由此，在晶片1的内部形成改质层。
详细来说，首先，作业者在附图所示的卡盘工作台部40的卡盘工作台43上载置晶片1。控制单元61使卡盘工作台43的保持面43a与吸引源连通，使保持面43a对晶片1进行吸引保持。接着，控制单元61对夹具部45进行控制而从四周对晶片1的周围的环状框架F进行夹持固定。
接着，如图2所示，控制单元61一边使激光单元12相对于晶片1相对地移动，一边对晶片1的分割预定线M照射激光光线而实施激光加工。
此时，首先，控制单元61对图1所示的分度进给单元20和卡盘工作台部40进行控制，使晶片1的1条分割预定线M与X轴平行，并将该分割预定线M的一端部配置(对准)在激光单元12(即厚度测定构件16、上表面高度测定构件17以及加工单元18)的正下方。该分割预定线M由激光光线来加工。
在对准之后，控制单元61对加工进给单元30进行控制而对卡盘工作台43所保持的晶片1沿着X轴方向进行加工进给。由此，例如，激光单元12相对于晶片1相对地向+X方向移动。
此时，如图5的(a)所示，控制单元61对加工单元18中的聚光器181(聚光透镜183)的高度位置进行控制。关于该控制，首先，如图5的(a)所示，为了在晶片1的内部的从下表面LS起的规定的高度位置P处形成改质层，图4所示的控制单元61的设定部63设定该规定的高度位置P处的距离晶片1的下表面LS的高度值H1。该高度值H1的设定例如按照由作业者指定的值来实施。
接着，控制单元61的计算部64使用设定部63所设定的高度值H1和包含常数a和常数b的以下的(1)式来计算聚光透镜183的适当的高度位置(Defocus)。
Defocus＝(晶片1的厚度T1-高度值H1-b)/a·· (1)
另外，聚光透镜183的高度位置(Defocus)例如在图5的(a)和(b)所示的例子中为使聚光点C位于晶片1的上表面US那样的聚光透镜183的高度位置(基准位置)成为(Defocus)＝0的位置。在该情况下，在形成改质层时，聚光点C被配置在晶片1的内部，因此，聚光透镜183的高度位置(Defocus)比基准位置低，为负值(参照图5的(b))。
另外，在图5的(a)和(b)所示的例子中，在晶片1的材质为硅的情况下，硅与空气的折射率的比约为4，因此，在晶片1内，聚光点C被定位在聚光透镜183从Defocus＝0起的移动量的约4倍深的位置。例如，当聚光透镜183的高度位置下降10μm(Defocus＝-10)时，聚光点C的位置(改质层的形成位置)下降约40μm。因此，如图5的(b)所示，由聚光点C形成的改质层的深度(从晶片1的上表面US到改质层的距离；Depth)约为40μm。
并且，(1)式中的晶片1的厚度T1的值可以是由图1所示的厚度测定构件16测定的值，也可以是由作业者预先输入并存储在存储部62中的值。
控制单元61使用致动器182(参照图3)将聚光器181的实际的高度位置设定在由计算部64求出的高度位置。
由此，能够将聚光点C配置在与设定部63所设定的距离晶片1的下表面LS的高度值H1对应的高度位置P，并在此处形成改质层。
这里，对上述的(1)式的导出进行说明。在本实施方式中，控制单元61的计算部64实施预先导出(1)式的常数a和常数b的计算式导出工序来作为激光加工的准备工序。
在该计算式导出工序中，计算部64例如在使测定用的晶片1保持于卡盘工作台43的状态下将包含加工单元18(聚光透镜183)的激光单元12配置在晶片1上。
然后，计算部64一边使聚光透镜183的聚光点C从晶片1的上表面US阶段性地下降，一边将聚光透镜183定位在高度不同的至少2个点处，从而在晶片1内形成深度(图5的(b)的Depth)不同的至少2个改质层。
之后，计算部64得到所形成的各改质层的深度(Depth)的测定结果。然后，计算部64在以深度(Depth)为纵轴、以聚光透镜183的高度位置(Defocus)为横轴的坐标系中绘制与所形成的至少2个改质层对应的点(测定点)。即，计算部64将与形成各改质层时的聚光透镜183的高度位置(Defocus)对应的测定出的各改质层的深度(Depth)绘制在坐标系中。这样，计算部64取得表示聚光透镜183的高度位置(Defocus)与改质层的深度(Depth)的关系的曲线图。
然后，计算部64求出通过与各改质层对应的点的近似直线的以下的(2)式所示的一次函数中的作为斜率的常数a和作为截距的常数b。这些常数a和常数b例如是与晶片1的材质(折射率)和所形成的改质层的深度(Depth)对应的值。
Depth＝a×Defocus+b·· (2)
接着，计算部64通过将该(2)式应用在与改质层的深度(Depth)相关的以下的(3)式中而求出所述的(1)式。
Depth＝晶片1的厚度-高度值H1·· (3)
以下，示出了(1)式的导出例。在该例中，如图6所示，计算部64一边将聚光透镜183距离规定的基准位置的高度位置(Defocus)在-6μm～-34μm的第1范围内改变为15种，并且在-90μm～-120μm的第2范围内改变为16种，一边在晶片1内的31个部位处形成改质层，将表示各改质层的深度(Depth)的测定点绘制在上述的坐标轴中。该例中的晶片1的厚度为700μm。
然后，根据这些测定点，计算部64得到以下的(2a)式来作为与上述的(2)式对应的一次函数。
Depth(y)＝-4.1985×Defocus(x)+36.519··(2a)
根据该式，计算部64求出作为一次函数的斜率的常数a＝-4.1985和作为截距的常数b＝36.519。然后，计算部64得到以下的(1a)式来作为与该例的上述的(1)式对应的式。
Defocus＝-(晶片1的厚度T1-高度值H1-36.519)/4.1985··(1a)
在之后的激光加工中，计算部64根据晶片1的厚度(T1)和由设定部63设定的高度值(H1)，使用(1a)式来计算聚光透镜183的高度位置(Defocus)。
如上所述，在本实施方式中，为了在规定的高度位置P形成改质层，设定部63设定该规定的高度位置P处的距离晶片1的下表面的高度值H1。然后，计算部64使用设定部63所设定的高度值H1和上述的(1)式来计算聚光透镜183的高度位置(Defocus)。
这样，在本实施方式中，计算部64能够根据设定部63所设定的改质层的高度值H1，计算聚光透镜183的适当的高度位置。因此，不需要实施如下的两个调整：首先根据空气与晶片1的折射率的比来粗略地求出聚光透镜183的高度位置，之后，根据预先实施的实验结果对该聚光透镜183的高度位置进行微调整。因此，能够更容易地决定激光加工中的聚光透镜183的高度位置。并且，也不需要实施用于微调整的麻烦的实验。
另外，即使距离晶片1的下表面LS的高度值H1相同，所形成的改质层的深度(Depth)也根据晶片1的厚度T1而不同。而且，在所形成的改质层的深度(Depth)不同的情况下，即使晶片1的材质相同，也存在应该用于上述(1)式的适当的常数a和常数b不同的情况。
例如，图6所示的曲线图中的仅与Defocus＝-6μm～-34μm的第1范围(仅晶片1的浅位置)相关的上述(2)式如图7所示那样为以下的(2b)式，常数a和常数b分别是a＝-4.3377和b＝33.791。
Depth(y)＝-4.3377×Defocus(x)+33.791··(2b)
另一方面，图6所示的曲线图中的仅与Defocus＝-90μm～-120μm的第2范围(仅晶片1的深位置)相关的上述(2)式如图8所示那样为以下的(2c)式，常数a和常数b分别为a＝-4.1372和b＝42.902。
Depth(y)＝-4.1372×Defocus(x)+42.902··(2c)
因此，计算部64也可以预先取得与改质层的深度(Depth)对应的多种常数a和常数b。然后，计算部64也可以根据改质层的深度(Depth)、即由设定部63设定的改质层的高度值H1和晶片1的厚度T1)来切换用于(1)式的常数a和常数b。由此，能够提高(1)式的精度，因此，能够更准确地计算聚光透镜183的高度位置(Defocus)。
并且，在1个晶片1的加工中，还存在晶片1的厚度T1和/或卡盘工作台43的保持面43a的高度根据加工进给位置的变化而发生变化的情况。在这样的情况下，控制单元61也可以通过厚度测定构件16和上表面高度测定构件17来测定晶片1的厚度T1和晶片1的上表面US的高度，根据测定结果对聚光透镜183的高度位置(Defocus)进行微调整。
并且，在图1所示的激光加工装置10中，在激光单元12中具有一对厚度测定构件16和一对上表面高度测定构件17。取而代之，激光单元12也可以具有各1个厚度测定构件16和上表面高度测定构件17。
并且，在图1所示的激光加工装置10中，厚度测定构件16和上表面高度测定构件17构成为分体的部件。并不限于此，也可以代替厚度测定构件16和上表面高度测定构件17而在激光单元12中具备具有厚度测定构件16和上表面高度测定构件17的功能的部件(即，能够测定晶片1的厚度和上表面高度的1个部件)。
并且，在计算部64使用作为晶片1的厚度T1存储在存储部62中的值的情况下，激光加工装置10也可以不具有厚度测定构件16。此外，在1个晶片1的加工中的与加工进给位置的变化对应的晶片1的厚度T1和卡盘工作台43的保持面43a的高度的变化小的情况下，激光加工装置10也可以不具有厚度测定构件16和上表面高度测定构件17。
并且，在图6所示的计算式导出工序的例子中，为了导出(1)式，计算部64在深度(Depth)不同的两个范围内，在31个部位处形成改质层。与此相关地，在计算式导出工序中，只要计算部64一边使聚光透镜183的聚光点C从晶片1的上表面阶段性地下降，一边将聚光透镜183定位在高度不同的至少2个点处，从而在晶片1中形成深度不同的至少2个改质层即可。

Claims (2)

1.一种激光加工装置，其具有：
加工单元，其将利用聚光透镜使对于被加工物具有透过性的波长的激光光线聚光而得的聚光点定位在被加工物的内部，通过该聚光点在被加工物的内部形成改质层；
卡盘工作台，其具有对被加工物进行保持的保持面；
加工进给单元，其将该卡盘工作台和该加工单元在与该保持面平行的方向上相对地进行加工进给；
升降构件，其使该聚光透镜在与该保持面垂直的方向上移动；以及
控制单元，
该控制单元包含：
设定部，其设定规定的高度位置的距离下表面的高度值，使得在被加工物的内部的从下表面起的该规定的高度位置形成改质层；以及
计算部，其使用该设定部所设定的该高度值以及包含常数a和常数b的以下的(1)式来计算该聚光透镜的高度位置Defocus，
Defocus＝(被加工物的厚度-高度值-b)/a··(1)
该计算部一边使该聚光透镜的聚光点从被加工物的上表面阶段性地下降，一边将该聚光透镜定位在高度不同的至少2个点处，在被加工物中形成深度不同的至少2个改质层，
在设从改质层到被加工物的上表面的距离Depth为纵轴、设该聚光透镜的高度位置Defocus为横轴的坐标系中，绘制与该至少2个改质层对应的点，
求出通过与各改质层对应的点的近似直线的以下的(2)式所示的一次函数中的作为斜率的常数a和作为截距的常数b，
Depth＝a×Defocus+b··(2)
通过将该(2)式应用在与从改质层到被加工物的上表面的距离Depth相关的以下的(3)式中，求出所述(1)式，
Depth＝被加工物的厚度-高度值··(3)
通过所述升降构件使该聚光透镜移动到由所述(1)式求出的Defocus的位置，从而在该设定部所设定的从被加工物的下表面起的高度位置形成改质层。
2.根据权利要求1所述的激光加工装置，其中，
所述计算部根据从改质层到被加工物的上表面的距离Depth来切换在所述(1)式中使用的该常数a和该常数b。
CN202010645562.7A 2019-07-09 2020-07-07 激光加工装置 Active CN112207463B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019127514A JP2021010936A (ja) 2019-07-09 2019-07-09 レーザ加工装置
JP2019-127514 2019-07-09

Publications (2)

Publication Number Publication Date
CN112207463A CN112207463A (zh) 2021-01-12
CN112207463B true CN112207463B (zh) 2022-12-06

Family

ID=74059579

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010645562.7A Active CN112207463B (zh) 2019-07-09 2020-07-07 激光加工装置

Country Status (6)

Country Link
US (1) US11351631B2 (zh)
JP (1) JP2021010936A (zh)
KR (1) KR20210006840A (zh)
CN (1) CN112207463B (zh)
DE (1) DE102020208553A1 (zh)
TW (1) TW202102327A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021010936A (ja) * 2019-07-09 2021-02-04 株式会社ディスコ レーザ加工装置
JP7305271B2 (ja) * 2019-08-08 2023-07-10 株式会社ディスコ レーザー加工装置の加工性能の確認方法
CN116745632A (zh) 2021-01-27 2023-09-12 住友电气工业株式会社 金刚石磁传感器单元及金刚石磁传感器系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011143488A (ja) * 2010-01-13 2011-07-28 Disco Abrasive Syst Ltd 厚み検出装置および研削機
JP2011151299A (ja) * 2010-01-25 2011-08-04 Disco Abrasive Syst Ltd レーザー加工方法
JP2018063148A (ja) * 2016-10-12 2018-04-19 株式会社ディスコ 計測装置
JP2018129540A (ja) * 2018-04-19 2018-08-16 株式会社東京精密 レーザーダイシング装置
CN109465541A (zh) * 2017-09-06 2019-03-15 株式会社迪思科 高度检测装置和激光加工装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003034417A1 (fr) * 2001-10-10 2003-04-24 Sony Corporation Lentille optique, lentille de condensation, capteur optique et dispositif d'enregistrement/reproduction optique
JP3977234B2 (ja) * 2002-04-24 2007-09-19 シャープ株式会社 光ピックアップ
JP4354262B2 (ja) * 2003-12-08 2009-10-28 株式会社ディスコ レーザー加工された変質層の確認方法
JP4527488B2 (ja) * 2004-10-07 2010-08-18 株式会社ディスコ レーザ加工装置
JP4885658B2 (ja) * 2006-09-01 2012-02-29 株式会社ディスコ 加工孔の深さ検出装置およびレーザー加工機
JP2009200383A (ja) * 2008-02-25 2009-09-03 Seiko Epson Corp 基板分割方法、及び表示装置の製造方法
JP5117920B2 (ja) * 2008-04-28 2013-01-16 株式会社ディスコ レーザー加工装置
JP2010024068A (ja) * 2008-07-16 2010-02-04 Seiko Epson Corp 基板分割方法及び表示装置の製造方法
JP5118580B2 (ja) * 2008-08-22 2013-01-16 株式会社ディスコ 高さ位置検出装置および高さ位置検出方法
JP5860228B2 (ja) * 2011-06-13 2016-02-16 株式会社ディスコ レーザー加工装置
JP5930645B2 (ja) * 2011-09-30 2016-06-08 株式会社ディスコ ウエーハの加工方法
JP6119963B2 (ja) * 2012-11-21 2017-04-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 自動焦点制御装置、半導体検査装置および顕微鏡
JP6062315B2 (ja) * 2013-04-24 2017-01-18 株式会社ディスコ ウエーハの加工方法
JP6101569B2 (ja) * 2013-05-31 2017-03-22 株式会社ディスコ レーザー加工装置
JP5743123B1 (ja) * 2014-03-14 2015-07-01 株式会社東京精密 レーザーダイシング装置及びダイシング方法
JP6328485B2 (ja) * 2014-05-13 2018-05-23 株式会社ディスコ ウエーハの加工方法
JP6549014B2 (ja) * 2015-10-13 2019-07-24 株式会社ディスコ 光デバイスウエーハの加工方法
JP6602207B2 (ja) * 2016-01-07 2019-11-06 株式会社ディスコ ＳｉＣウエーハの生成方法
JP6907011B2 (ja) * 2017-04-24 2021-07-21 株式会社ディスコ レーザー加工装置、及びレーザー加工方法
JP6901909B2 (ja) * 2017-06-05 2021-07-14 株式会社ディスコ エキスパンド方法及びエキスパンド装置
KR102368435B1 (ko) * 2017-07-28 2022-03-02 삼성전자주식회사 기판 검사 장치, 기판 검사 방법 및 이를 이용한 반도체 소자의 제조 방법
JP7043124B2 (ja) * 2017-09-22 2022-03-29 株式会社ディスコ ウェーハの加工方法
JP7235563B2 (ja) * 2019-03-29 2023-03-08 株式会社ディスコ レーザー加工方法
JP7325229B2 (ja) * 2019-06-06 2023-08-14 株式会社ディスコ 発振器載置台、レーザー加工装置及び発振器載置台の調整方法
JP2021010936A (ja) * 2019-07-09 2021-02-04 株式会社ディスコ レーザ加工装置
JP7237432B2 (ja) * 2019-07-26 2023-03-13 株式会社ディスコ 比較方法及びレーザー加工装置
JP7358107B2 (ja) * 2019-07-31 2023-10-10 株式会社ディスコ レーザー加工装置
JP7408332B2 (ja) * 2019-09-27 2024-01-05 株式会社ディスコ レーザー加工装置
JP7336977B2 (ja) * 2019-12-11 2023-09-01 株式会社ディスコ レーザービームのスポット形状の補正方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011143488A (ja) * 2010-01-13 2011-07-28 Disco Abrasive Syst Ltd 厚み検出装置および研削機
JP2011151299A (ja) * 2010-01-25 2011-08-04 Disco Abrasive Syst Ltd レーザー加工方法
JP2018063148A (ja) * 2016-10-12 2018-04-19 株式会社ディスコ 計測装置
CN109465541A (zh) * 2017-09-06 2019-03-15 株式会社迪思科 高度检测装置和激光加工装置
JP2018129540A (ja) * 2018-04-19 2018-08-16 株式会社東京精密 レーザーダイシング装置

Also Published As

Publication number Publication date
CN112207463A (zh) 2021-01-12
US11351631B2 (en) 2022-06-07
JP2021010936A (ja) 2021-02-04
DE102020208553A1 (de) 2021-01-14
TW202102327A (zh) 2021-01-16
KR20210006840A (ko) 2021-01-19
US20210008661A1 (en) 2021-01-14

Similar Documents

Publication Publication Date Title
CN112207463B (zh) 激光加工装置
US11325205B2 (en) Laser processing method
JP6907011B2 (ja) レーザー加工装置、及びレーザー加工方法
JP2017108089A (ja) レーザ加工装置及びレーザ加工方法
CN108723584B (zh) 高度位置检测单元的评价用治具和评价方法
US9044819B2 (en) Laser processing apparatus
KR102271652B1 (ko) 피가공물의 절삭 방법
US20230343618A1 (en) Substrate-floatation-type laser processing apparatus and method for measuring floating height
JP2018190856A (ja) レーザ加工方法
US20110290769A1 (en) Method of dividing workpiece using laser beam
CN111834254A (zh) 加工装置和被加工物的加工方法
KR20160130024A (ko) 레이저 글래스 커팅장치
CN112296526B (zh) 比较方法和激光加工装置
JP5329199B2 (ja) レーザ加工装置、レーザ加工制御方法およびレーザ加工用プログラム
JP2020136662A (ja) 確認方法
JP2021087982A (ja) レーザー加工装置の調整方法
JP2020182960A (ja) レーザー加工装置
JP7330624B2 (ja) レーザー加工装置及び被加工物の加工方法
JP2012192415A (ja) レーザー加工装置
CN220445414U (zh) 隐形切割设备
JP6099507B2 (ja) 切削方法
JP7242140B2 (ja) 収差確認方法
JP2020196038A (ja) 傾き確認方法
JPH03128186A (ja) レーザ加工装置
KR20230170574A (ko) 레이저 가공 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant