CN111987101B - 反熔丝存储器 - Google Patents

反熔丝存储器 Download PDF

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Publication number
CN111987101B
CN111987101B CN202010893535.1A CN202010893535A CN111987101B CN 111987101 B CN111987101 B CN 111987101B CN 202010893535 A CN202010893535 A CN 202010893535A CN 111987101 B CN111987101 B CN 111987101B
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CN
China
Prior art keywords
memory
bit line
fuse
word line
region
Prior art date
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Active
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CN202010893535.1A
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English (en)
Chinese (zh)
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CN111987101A (zh
Inventor
葛西秀男
谷口泰弘
川嶋泰彦
樱井良多郎
品川裕
户谷达郎
山口贵德
大和田福夫
吉田信司
畑田辉男
野田敏史
加藤贵文
村谷哲也
奥山幸祐
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Floadia Corp
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Floadia Corp
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Priority to CN202010893535.1A priority Critical patent/CN111987101B/zh
Publication of CN111987101A publication Critical patent/CN111987101A/zh
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Publication of CN111987101B publication Critical patent/CN111987101B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN202010893535.1A 2015-02-25 2016-02-19 反熔丝存储器 Active CN111987101B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015-035858 2015-02-25
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置
CN201680008338.9A CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置
PCT/JP2016/054809 WO2016136604A1 (ja) 2015-02-25 2016-02-19 半導体記憶装置
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680008338.9A Division CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Publications (2)

Publication Number Publication Date
CN111987101A CN111987101A (zh) 2020-11-24
CN111987101B true CN111987101B (zh) 2024-08-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010893535.1A Active CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器
CN201680008338.9A Active CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680008338.9A Active CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Country Status (9)

Country Link
US (1) US10074660B2 (enExample)
EP (1) EP3264464B1 (enExample)
JP (1) JP6500200B2 (enExample)
KR (2) KR102483827B1 (enExample)
CN (2) CN111987101B (enExample)
IL (1) IL254101B (enExample)
SG (1) SG11201706892UA (enExample)
TW (1) TWI689932B (enExample)
WO (1) WO2016136604A1 (enExample)

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US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
EP3624185A4 (en) * 2018-07-17 2020-06-24 Shenzhen Weitongbo Technology Co., Ltd. ANTIFUSE, ANTIFUSE MANUFACTURING METHOD AND STORAGE DEVICE
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
JP7673083B2 (ja) * 2022-05-25 2025-05-08 チャンシン メモリー テクノロジーズ インコーポレイテッド アンチヒューズ構造、アンチヒューズアレイ及びメモリ

Citations (2)

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CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
CN103579246A (zh) * 2012-08-02 2014-02-12 美格纳半导体有限公司 一次性可编程存储器单元及其制造方法

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JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
JP2008047702A (ja) 2006-08-16 2008-02-28 Nec Electronics Corp 半導体記憶装置
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
JP2009147003A (ja) * 2007-12-12 2009-07-02 Toshiba Corp 半導体記憶装置
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
CN102160178B (zh) * 2008-09-19 2013-06-19 株式会社半导体能源研究所 半导体器件
KR101699230B1 (ko) * 2010-08-30 2017-01-25 삼성전자주식회사 안티퓨즈 메모리 셀, 이의 제조 방법, 이를 포함하는 비휘발성 메모리 장치 및 리페어 기능을 갖는 메모리 장치
US8228730B2 (en) * 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
KR101088954B1 (ko) * 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
US8817518B2 (en) * 2012-08-31 2014-08-26 SK Hynix Inc. E-fuse array circuit and programming method of the same
CN104240762B (zh) * 2013-06-09 2018-06-01 中芯国际集成电路制造(上海)有限公司 反熔丝结构及编程方法
CN104347629B (zh) * 2013-07-24 2017-04-19 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
JP5756971B1 (ja) * 2014-10-31 2015-07-29 株式会社フローディア アンチヒューズメモリおよび半導体記憶装置

Patent Citations (2)

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CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
CN103579246A (zh) * 2012-08-02 2014-02-12 美格纳半导体有限公司 一次性可编程存储器单元及其制造方法

Also Published As

Publication number Publication date
CN111987101A (zh) 2020-11-24
CN107251222B (zh) 2020-09-25
EP3264464B1 (en) 2021-12-22
IL254101A0 (en) 2017-10-31
JP6500200B2 (ja) 2019-04-17
TWI689932B (zh) 2020-04-01
KR102522368B1 (ko) 2023-04-18
EP3264464A1 (en) 2018-01-03
JP2016157873A (ja) 2016-09-01
EP3264464A4 (en) 2018-10-24
TW201635302A (zh) 2016-10-01
KR20230006606A (ko) 2023-01-10
WO2016136604A1 (ja) 2016-09-01
KR102483827B1 (ko) 2023-01-03
US20180019248A1 (en) 2018-01-18
US10074660B2 (en) 2018-09-11
IL254101B (en) 2022-02-01
SG11201706892UA (en) 2017-10-30
KR20170120662A (ko) 2017-10-31
CN107251222A (zh) 2017-10-13

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