KR102483827B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR102483827B1
KR102483827B1 KR1020177026913A KR20177026913A KR102483827B1 KR 102483827 B1 KR102483827 B1 KR 102483827B1 KR 1020177026913 A KR1020177026913 A KR 1020177026913A KR 20177026913 A KR20177026913 A KR 20177026913A KR 102483827 B1 KR102483827 B1 KR 102483827B1
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South Korea
Prior art keywords
memory
word line
antifuse
bit line
gate electrode
Prior art date
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Active
Application number
KR1020177026913A
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English (en)
Korean (ko)
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KR20170120662A (ko
Inventor
히데오 가사이
야스히로 다니구찌
야스히꼬 가와시마
료따로 사꾸라이
유따까 시나가와
다쯔로 도야
다까노리 야마구찌
후꾸오 오와다
신지 요시다
데루오 하따다
사또시 노다
다까후미 가또
데쯔야 무라야
고스께 오꾸야마
Original Assignee
플로디아 코포레이션
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Publication date
Application filed by 플로디아 코포레이션 filed Critical 플로디아 코포레이션
Priority to KR1020227046126A priority Critical patent/KR102522368B1/ko
Publication of KR20170120662A publication Critical patent/KR20170120662A/ko
Application granted granted Critical
Publication of KR102483827B1 publication Critical patent/KR102483827B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H01L27/11206—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020177026913A 2015-02-25 2016-02-19 반도체 기억 장치 Active KR102483827B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227046126A KR102522368B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-035858 2015-02-25
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置
PCT/JP2016/054809 WO2016136604A1 (ja) 2015-02-25 2016-02-19 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227046126A Division KR102522368B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치

Publications (2)

Publication Number Publication Date
KR20170120662A KR20170120662A (ko) 2017-10-31
KR102483827B1 true KR102483827B1 (ko) 2023-01-03

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177026913A Active KR102483827B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치
KR1020227046126A Active KR102522368B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227046126A Active KR102522368B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치

Country Status (9)

Country Link
US (1) US10074660B2 (enExample)
EP (1) EP3264464B1 (enExample)
JP (1) JP6500200B2 (enExample)
KR (2) KR102483827B1 (enExample)
CN (2) CN111987101B (enExample)
IL (1) IL254101B (enExample)
SG (1) SG11201706892UA (enExample)
TW (1) TWI689932B (enExample)
WO (1) WO2016136604A1 (enExample)

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US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
EP3624185A4 (en) * 2018-07-17 2020-06-24 Shenzhen Weitongbo Technology Co., Ltd. ANTIFUSE, ANTIFUSE MANUFACTURING METHOD AND STORAGE DEVICE
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
JP7673083B2 (ja) * 2022-05-25 2025-05-08 チャンシン メモリー テクノロジーズ インコーポレイテッド アンチヒューズ構造、アンチヒューズアレイ及びメモリ

Family Cites Families (18)

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JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
JP2008047702A (ja) 2006-08-16 2008-02-28 Nec Electronics Corp 半導体記憶装置
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
JP2009147003A (ja) * 2007-12-12 2009-07-02 Toshiba Corp 半導体記憶装置
CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
CN102160178B (zh) * 2008-09-19 2013-06-19 株式会社半导体能源研究所 半导体器件
KR101699230B1 (ko) * 2010-08-30 2017-01-25 삼성전자주식회사 안티퓨즈 메모리 셀, 이의 제조 방법, 이를 포함하는 비휘발성 메모리 장치 및 리페어 기능을 갖는 메모리 장치
US8228730B2 (en) * 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
KR101088954B1 (ko) * 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
KR101731129B1 (ko) * 2012-08-02 2017-04-28 매그나칩 반도체 유한회사 Ｏｔｐ 메모리 셀 및 그 제조 방법
US8817518B2 (en) * 2012-08-31 2014-08-26 SK Hynix Inc. E-fuse array circuit and programming method of the same
CN104240762B (zh) * 2013-06-09 2018-06-01 中芯国际集成电路制造(上海)有限公司 反熔丝结构及编程方法
CN104347629B (zh) * 2013-07-24 2017-04-19 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
JP5756971B1 (ja) * 2014-10-31 2015-07-29 株式会社フローディア アンチヒューズメモリおよび半導体記憶装置

Also Published As

Publication number Publication date
CN111987101A (zh) 2020-11-24
CN107251222B (zh) 2020-09-25
EP3264464B1 (en) 2021-12-22
CN111987101B (zh) 2024-08-02
IL254101A0 (en) 2017-10-31
JP6500200B2 (ja) 2019-04-17
TWI689932B (zh) 2020-04-01
KR102522368B1 (ko) 2023-04-18
EP3264464A1 (en) 2018-01-03
JP2016157873A (ja) 2016-09-01
EP3264464A4 (en) 2018-10-24
TW201635302A (zh) 2016-10-01
KR20230006606A (ko) 2023-01-10
WO2016136604A1 (ja) 2016-09-01
US20180019248A1 (en) 2018-01-18
US10074660B2 (en) 2018-09-11
IL254101B (en) 2022-02-01
SG11201706892UA (en) 2017-10-30
KR20170120662A (ko) 2017-10-31
CN107251222A (zh) 2017-10-13

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