TWI689932B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI689932B
TWI689932B TW105105276A TW105105276A TWI689932B TW I689932 B TWI689932 B TW I689932B TW 105105276 A TW105105276 A TW 105105276A TW 105105276 A TW105105276 A TW 105105276A TW I689932 B TWI689932 B TW I689932B
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TW
Taiwan
Prior art keywords
memory
fuse
bit line
word line
gate electrode
Prior art date
Application number
TW105105276A
Other languages
English (en)
Chinese (zh)
Other versions
TW201635302A (zh
Inventor
葛西秀男
谷口泰弘
川嶋泰彥
櫻井良多郎
品川裕
戶谷達郎
山口貴徳
大和田福夫
吉田信司
畑田輝男
野田敏史
加藤貴文
村谷哲也
奧山幸祐
Original Assignee
日商芙洛提亞股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商芙洛提亞股份有限公司 filed Critical 日商芙洛提亞股份有限公司
Publication of TW201635302A publication Critical patent/TW201635302A/zh
Application granted granted Critical
Publication of TWI689932B publication Critical patent/TWI689932B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW105105276A 2015-02-25 2016-02-23 半導體記憶裝置 TWI689932B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-035858 2015-02-25
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW201635302A TW201635302A (zh) 2016-10-01
TWI689932B true TWI689932B (zh) 2020-04-01

Family

ID=56788525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105105276A TWI689932B (zh) 2015-02-25 2016-02-23 半導體記憶裝置

Country Status (9)

Country Link
US (1) US10074660B2 (enExample)
EP (1) EP3264464B1 (enExample)
JP (1) JP6500200B2 (enExample)
KR (2) KR102483827B1 (enExample)
CN (2) CN111987101B (enExample)
IL (1) IL254101B (enExample)
SG (1) SG11201706892UA (enExample)
TW (1) TWI689932B (enExample)
WO (1) WO2016136604A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
EP3624185A4 (en) * 2018-07-17 2020-06-24 Shenzhen Weitongbo Technology Co., Ltd. ANTIFUSE, ANTIFUSE MANUFACTURING METHOD AND STORAGE DEVICE
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
JP7673083B2 (ja) * 2022-05-25 2025-05-08 チャンシン メモリー テクノロジーズ インコーポレイテッド アンチヒューズ構造、アンチヒューズアレイ及びメモリ

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667902B2 (en) * 2001-09-18 2003-12-23 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US20080042235A1 (en) * 2006-08-16 2008-02-21 Nec Electronics Corporation Semiconductor memory device
US20090152610A1 (en) * 2007-12-12 2009-06-18 Kabushiki Kaisha Toshiba Semiconductor memory device
US20100061136A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Memory Device and Semiconductor Device
US20100072474A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device
US20120051132A1 (en) * 2010-08-31 2012-03-01 Micron Technology, Inc. Memory cell structures and methods
US20130051113A1 (en) * 2011-08-26 2013-02-28 Euipil Kwon Programmable non-volatile memory
EP2760026A1 (en) * 2011-09-21 2014-07-30 Floadia Corporation Non-volatile semiconductor memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
KR101699230B1 (ko) * 2010-08-30 2017-01-25 삼성전자주식회사 안티퓨즈 메모리 셀, 이의 제조 방법, 이를 포함하는 비휘발성 메모리 장치 및 리페어 기능을 갖는 메모리 장치
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
KR101731129B1 (ko) * 2012-08-02 2017-04-28 매그나칩 반도체 유한회사 Ｏｔｐ 메모리 셀 및 그 제조 방법
US8817518B2 (en) * 2012-08-31 2014-08-26 SK Hynix Inc. E-fuse array circuit and programming method of the same
CN104240762B (zh) * 2013-06-09 2018-06-01 中芯国际集成电路制造(上海)有限公司 反熔丝结构及编程方法
CN104347629B (zh) * 2013-07-24 2017-04-19 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
JP5756971B1 (ja) * 2014-10-31 2015-07-29 株式会社フローディア アンチヒューズメモリおよび半導体記憶装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667902B2 (en) * 2001-09-18 2003-12-23 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US20080042235A1 (en) * 2006-08-16 2008-02-21 Nec Electronics Corporation Semiconductor memory device
US20090152610A1 (en) * 2007-12-12 2009-06-18 Kabushiki Kaisha Toshiba Semiconductor memory device
US20100061136A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Memory Device and Semiconductor Device
JP2010087494A (ja) * 2008-09-05 2010-04-15 Semiconductor Energy Lab Co Ltd 半導体記憶装置、及び半導体装置
TW201025551A (en) * 2008-09-05 2010-07-01 Semiconductor Energy Lab Semiconductor memory device and semiconductor device
US20100072474A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device
US20120051132A1 (en) * 2010-08-31 2012-03-01 Micron Technology, Inc. Memory cell structures and methods
US20130051113A1 (en) * 2011-08-26 2013-02-28 Euipil Kwon Programmable non-volatile memory
EP2760026A1 (en) * 2011-09-21 2014-07-30 Floadia Corporation Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
CN111987101A (zh) 2020-11-24
CN107251222B (zh) 2020-09-25
EP3264464B1 (en) 2021-12-22
CN111987101B (zh) 2024-08-02
IL254101A0 (en) 2017-10-31
JP6500200B2 (ja) 2019-04-17
KR102522368B1 (ko) 2023-04-18
EP3264464A1 (en) 2018-01-03
JP2016157873A (ja) 2016-09-01
EP3264464A4 (en) 2018-10-24
TW201635302A (zh) 2016-10-01
KR20230006606A (ko) 2023-01-10
WO2016136604A1 (ja) 2016-09-01
KR102483827B1 (ko) 2023-01-03
US20180019248A1 (en) 2018-01-18
US10074660B2 (en) 2018-09-11
IL254101B (en) 2022-02-01
SG11201706892UA (en) 2017-10-30
KR20170120662A (ko) 2017-10-31
CN107251222A (zh) 2017-10-13

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