CN111886214A - 铜陶瓷衬底 - Google Patents
铜陶瓷衬底 Download PDFInfo
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Abstract
本发明涉及一种铜陶瓷衬底(1),其包括陶瓷载体(2),以及结合至陶瓷载体(2)的表面上的至少一个铜层结构(3、4),其具有用于形成导电结构和/或固定键合线的自由表面,其中铜层(3、4)具有平均晶粒度直径为200μm至500μm,优选为300μm至400μm的微结构。
Description
本发明涉及一种具有根据权利要求1的前序部分的特征的铜陶瓷衬底。
例如,铜陶瓷衬底(例如DCB、AMB)用于制造电力电子模块,并且是在一侧或两侧上具有铜层的陶瓷载体的复合材料。将铜层预制为铜箔形式的半成品铜产品,其厚度通常为0.1mm至1.0mm,并使用连接方法连接至陶瓷载体。这种连接方法也称为DCB(直接铜键合)或AMB(活性金属钎焊)。然而,在陶瓷载体的强度更高的情况下,也可以施加具有甚至更大厚度的铜层,这在电学和热学性质方面从根本上是有利的。
由例如莫来石、Al2O3、Si3N4、AlN、ZTA、ATZ、TiO2、ZrO2、MgO、CaO、CaCO3或这些材料中的至少两种的混合物制成的陶瓷板被用作陶瓷载体。
在DCB方法中,使用以下方法步骤将铜层连接至陶瓷基底:
-使铜层氧化以得到均匀的铜氧化物层;
-将铜层放置在陶瓷载体上;
-将复合材料加热到1060℃至1085℃的加工温度。
这会在铜层上形成共晶熔体,并与陶瓷载体形成物质间的键合。此过程称为键合。如果将Al2O3用作陶瓷载体,则会通过键合形成薄的Cu-Al尖晶石层。
在键合过程之后,通过蚀刻朝外的铜层表面,即铜层的自由表面,来构造所需的导电带(conductor track)。然后将芯片焊接在其上,并通过应用键合线与芯片各个上侧的触点进行连接,为此,铜层自由表面的微结构应尽可能均匀且结构精细。然后还可以将铜陶瓷衬底连接到基底板上,以制备电力模块。
所描述的铜陶瓷衬底的优点首先在于铜的高载流能力以及陶瓷载体的良好的电绝缘和机械支撑。此外,DCB技术允许铜层很好地附着到陶瓷载体上。另外,所使用的铜陶瓷衬底在应用中经常出现的高环境温度下也很稳定。
铜陶瓷衬底的弱点是所谓的抗热震性,它是描述在一定量的临时热诱导应力作用下部件失效的材料参数。该参数对于电力模块的使用寿命很重要,因为在模块运行期间会产生极端的温度梯度。由于所用陶瓷和铜材料的热膨胀系数不同,因此在铜陶瓷衬底的使用过程中会产生热诱导的机械应力,经过一定次数的循环后,会导致铜层与陶瓷层分层,和/或导致陶瓷层和/或铜层中产生裂纹,从而可能导致部件失效。
通常,具有精细的微结构的铜层的铜陶瓷衬底具有的优点是它们通常在光学检查、接合能力、蚀刻行为、晶界形成、电镀性和进一步加工方面具有优势。然而,不利的是,由于在温度波动的情况下较高的热诱导的应力,它们具有较短的使用寿命和较差的抗温度变化性能。
相反,具有较粗糙的微结构的铜层的铜陶瓷衬底具有使用寿命更长的优点,但是就上述附加要求而言是不利的。
DE 102015224464 A1公开了一种铜陶瓷衬底,其中有意地使朝向陶瓷载体一侧上的铜层的微结构具有比自由表面上的铜层的微结构更大的晶粒度。
事实上,该解决方案的优势体现在由于微结构的晶粒度较小,自由表面上的铜层可以被构造得轻而精细,而朝向陶瓷载体一侧上的铜层由于晶粒度较大,根据Hall-Petch关系,则具有更好的抗热震性。从而,对于上述不同需求,可以改善铜陶瓷衬底以使其具有更好的性能。在铜层的两侧上有针对性地选择晶粒度产生了新的设计参数,通过该参数可以针对两种需求以改进的方式设计铜陶瓷衬底。
事实上,这种解决方案的缺点在于不同晶粒度的实现需要额外的工作。例如,为了实现不同的晶粒度,可以设想通过镀上两种具有不同晶粒度的不同铜层来制备铜层,这需要额外的工作量以及相关成本。结果是DE 102015224464 A1的铜陶瓷衬底变得更昂贵,因此仅适用于更高价格的特殊应用。
在此背景下,本发明的目的是提供一种铜陶瓷衬底,其可以比公开的DE102015224464 A1中的铜陶瓷衬底更经济地制备,并且能够满足各种需求。
根据本发明,提出了一种具有根据权利要求1的前序部分的特征的铜陶瓷衬底以实现该目的。在从属权利要求中可以找到进一步的优选方案。
根据本发明的基本构思,提出了铜层具有平均晶粒度为200μm至500μm,优选为300μm至400μm的微结构。
在这种情况下,微结构的晶粒不仅需要具有所提出的范围内的晶粒度,而且还需要具有对应于单峰高斯分布的晶粒度的分布,并且小部分晶粒也可能具有小于或大于200μm或500μm或小于或大于300μm或400μm的晶粒度。重要的是平均晶粒度在所提出的范围内。例如,可以使用ASTM 112-13中所述的线性截距法确定晶粒度直径。但是,在任何情况下都必须避免晶粒的晶粒度大于1000μm。
可以通过在陶瓷载体上进行键合的过程中直接实现所提出的铜层微结构,例如,通过按照预定通量或停留时间以及键合过程的前期和后期的温度选择,或者也可以通过单独的温度后处理。
所提出的铜陶瓷衬底的优点可以在于,事实上它具有足够长的使用寿命,因为通过选择平均晶粒度直径晶粒具有平均尺寸,从而根据Hall-Petch关系,在温度诱导的交替弯曲负载期间在正常使用情况下可以在衬底中实现足够低的应力水平以实现期望的长使用寿命。另外,为满足对键合能力、光学检查、引入导电结构所需的蚀刻或切割工艺的要求以及其他特定要求,平均晶粒度小于500μm,或特别优选小于400μm是有利的。
为了在温度处理工艺之后获得铜层微结构的这些有利性能,还提出了
-铜层
-具有至少99.95%的比例的Cu,优选至少99.99%的比例的Cu。
此外,铜层可优选具有
-至多25ppm的比例的Ag。
根据另一个优选实施方案,铜层可具有
-至多10ppm,优选至多5ppm的比例的O。
还提出了
-铜层的Cd、Ce、Ge、V、Zn元素的比例分别为至多0ppm至1ppm,其中
-根据另一个优选实施方案的铜层具有的Cd、Ce、Ge、V、Zn元素的比例总计至少为0.5ppm且至多为5ppm。
还提出了
-铜层的Bi、Se、Sn、Te元素的比例分别为至多0ppm至2ppm,其中
-根据另一个优选实施方案的铜层具有的Bi、Se、Sn、Te元素的比例总计至少为1.0ppm且至多为8ppm。
还提出了
-铜层的Al、Sb、Ti、Zr元素的比例分别为至多0ppm至3ppm,其中
-根据另一个优选实施方案的铜层具有的Al、Sb、Ti、Zr元素的比例总计至少为1.0ppm且至多为10ppm。
还提出了
-铜层的As、Co、In、Mn、Pb、Si元素的比例分别为至多0ppm至5ppm,其中
-根据另一个优选实施方案的铜层具有的As、Co、In、Mn、Pb、Si元素的比例总计至少为1.0ppm且至多为20ppm。
还提出了
-铜层的B、Be、Cr、Fe、Mn、Ni、P、S元素的比例分别为至多0ppm至10ppm,其中
-根据另一个优选实施方案的铜层具有的B、Be、Cr、Fe、Mn、Ni、P、S元素的比例总计至少为1.0ppm且至多为50ppm。
还提出了
-铜层具有权利要求4至16中提及的元素,包括其他杂质,其比例优选至多为50ppm。
下面根据优选实施方案并参照附图对本发明进行说明,其中:
图1是根据本发明的具有两个铜层的铜陶瓷衬底。
电力模块是电力电子的半导体器件,并用作半导体开关。在一个壳体中,它们包含与散热器电绝缘的多个功率半导体(芯片)。通过焊接或黏接将它们施加到(例如由陶瓷制成的)电绝缘板的金属化表面上,从而一方面确保了向基底的热传导,另一方面确保了电绝缘。金属化层和绝缘板的复合材料称为铜陶瓷衬底,并使用所谓的DCB技术(直接铜键合技术)以工业规模实现。
芯片通过细键合线键合而连接。此外,还可以存在并集成其他具有不同功能的模块(例如,传感器、电阻器)。
为了制备DCB衬底,将陶瓷载体(例如,Al2O3、Si3N4、AIN、ZTA、ATZ)在键合过程中在顶部和底部使用铜层彼此键合。在准备该过程中,可以在将铜层放置在陶瓷载体上之前对其进行表面氧化(例如化学氧化或热氧化),然后将其放置在陶瓷载体上。在1060℃至1085℃的高温过程中建立连接,其中在铜层表面上形成共晶熔体,其与陶瓷载体形成连接。例如,铜(Cu)在氧化铝(Al2O3)上的情况下,该连接由薄的Cu-Al尖晶石层组成。
图1示出了根据本发明进一步开发的具有陶瓷载体2和两个铜层3和4的铜陶瓷衬底1。还开发了根据本发明的两个铜层3和4,其微结构的平均晶粒度为200μm至500μm,优选为300μm至400μm。
铜层3和4可以例如通过一开始描述的DCB方法连接至陶瓷载体2,使得它们在相应的表面边缘区域5和6中通过物质之间的连接而连接至陶瓷载体2。
在DCB方法期间,将预氧化的半成品铜产品形式的铜层3和4放置在陶瓷载体2上,然后加热至1060℃至1085℃的工艺温度。铜层3和4中的Cu-低氧化物熔化并在表面边缘区域中与陶瓷载体2形成连接。由于温度和两种铜材料的重结晶的影响,可以通过选择合适的停留时间和冷却时间来设置微结构,以便自动设置优选的平均晶粒度直径。由于包括冷却过程在内的温度处理的影响是本领域技术人员公知的,因此他可以具体选择参数,从而形成根据本发明的微结构,而无需进一步的温度处理。如果键合过程不允许这种设置,或者如果由于经济原因这样是不利的,则还可以通过随后或之前进行的温度处理来实现微结构。此外,键合后的铜层3和4优选具有40至100的维氏硬度。
具有根据本发明的微结构或具有根据本发明提出的比例并且特别是具有所提出的O比例的铜层3和4是高导电性的Cu材料,并且具有50MS/m的电导率,优选至少57MS/m的电导率,特别优选至少58MS/m的电导率。然而,也可以设想具有较低电导率的材料。此外,如果需要进一步完善铜层3和4的材料性能,则铜层3和4也可以根据需要补充其他的Cu材料或层,并且根据本发明的微结构不会由此受到不利影响。
铜层3和4的半成品铜产品的厚度可以为0.1mm到1.0mm,并以大尺寸放置在陶瓷载体2上,并通过DCB方法连接至陶瓷载体2上。然后将大面积的铜陶瓷衬底1切成较小的单元,然后进行进一步处理。
铜层3和4还可以具有至少99.95%的Cu,优选至少99.99%的Cu,至多25ppm的Ag,至多10ppm的O,或优选至多5ppm的O。
另外,铜层3和4可以具有分别至多为0ppm至1ppm的比例的Cd、Ce、Ge、V、Zn元素,和/或分别至多为0ppm至2ppm的比例的Bi、Se、Sn、Te元素,和/或分别至多为0ppm至3ppm的比例的Al、Sb、Ti、Zr,和/或分别至多为0ppm至5ppm的比例的As、Co、In、Mn、Pb、Si元素,和/或分别至多为0ppm至10ppm的比例的B、Be、Cr、Fe、Mn、Ni、P、S元素。可以即将在铸造前在熔融过程中通过掺杂将所列举的其他元素有意引入微结构,或者在制备半成品铜产品期间它们可能已经存在于铜层3和4中。无论如何,这些元素,包括额外的杂质的比例应优选为至多50ppm。
此外,根据另一个优选实施方案的铜层具有至少0.5ppm且至多5ppm的比例的Cd、Ce、Ge、V、Zn元素,至少为1.0ppm且至多8ppm的比例的Bi、Se、Sn、Te元素,至少为1.0ppm且至多10ppm的比例的Al、Sb、Ti、Zr元素,至少1.0ppm且至多20ppm的比例的As、Co、In、Mn、Pb、Si元素,总计至少为1.0ppm且至多50ppm的比例的B、Be、Cr、Fe、Mn、Ni、P、S元素。
为了获得根据本发明提出的微结构的平均晶粒度,所描述的元素的定量比例是必要的。形成微结构的原因尤其是由于由元素引起的微结构的晶粒细化以及在键合过程中微结构中的二次再结晶减少。例如,由于可以改变元素并且特别是提高了再结晶温度,因此在键合过程中微结构不再改变到以至于平均晶粒度增加并且因此超出了所提出的范围。此外,由于Zr用作外部晶种,因此元素Zr可以用于保持微结构,同时保持暴露于温度下的平均晶粒度。
Claims (17)
1.一种铜陶瓷衬底(1),其包括
-陶瓷载体(2),以及
-键合至陶瓷载体(2)的表面的至少一个铜层(3、4),其具有
-用于形成导电结构和/或固定键合线的自由表面,其特征在于
-铜层(3、4)具有平均晶粒度直径为200μm至500μm,优选为300μm至400μm的微结构。
2.根据权利要求1所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有至少50MS/m,优选至少57MS/m,特别优选至少58MS/m的电导率。
3.根据权利要求1或2所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)的维氏硬度为40至100。
4.根据前述权利要求中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有至少99.95%的比例的Cu,优选至少99.99%的比例的Cu。
5.根据权利要求4所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有至多25ppm的比例的Ag。
6.根据权利要求4或5所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有至多10ppm的比例的O,优选至多5ppm的比例的O。
7.根据权利要求4至6中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有分别至多为0ppm至1ppm的比例的Cd、Ce、Ge、V、Zn元素。
8.根据权利要求7所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有总计至少为0.5ppm且至多为5ppm的比例的Cd、Ce、Ge、V、Zn元素。
9.根据权利要求4至8中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有分别至多为0ppm至2ppm的比例的Bi、Se、Sn、Te元素。
10.根据权利要求9所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有总计至少为1.0ppm且至多为8ppm的比例的Bi、Se、Sn、Te元素。
11.根据权利要求4至10中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有分别至多为0ppm至3ppm的比例的Al、Sb、Ti、Zr元素。
12.根据权利要求11所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有总计至少为1.0ppm且至多为10ppm的比例的Al、Sb、Ti、Zr元素。
13.根据权利要求4至12中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有分别至多为0ppm至5ppm的比例的As、Co、In、Mn、Pb、Si元素。
14.根据权利要求13所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有总计至少为1.0ppm且至多为20ppm的比例的As、Co、In、Mn、Pb、Si元素。
15.根据权利要求4至14中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有分别至多为0ppm至10ppm的比例的B、Be、Cr、Fe、Mn、Ni、P、S元素。
16.根据权利要求15所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有总计为至少1.0ppm且至多为50ppm的比例的B、Be、Cr、Fe、Mn、Ni、P、S元素。
17.根据权利要求4至16中任一项所述的铜陶瓷衬底(1),其特征在于,
-铜层(3、4)具有至多50ppm的比例的权利要求7至16中提及的元素,包括其他杂质。
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