CN116390897A - 铜-陶瓷基板 - Google Patents
铜-陶瓷基板 Download PDFInfo
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- CN116390897A CN116390897A CN202180066263.0A CN202180066263A CN116390897A CN 116390897 A CN116390897 A CN 116390897A CN 202180066263 A CN202180066263 A CN 202180066263A CN 116390897 A CN116390897 A CN 116390897A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 239000010949 copper Substances 0.000 claims abstract description 141
- 229910052802 copper Inorganic materials 0.000 claims abstract description 134
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 130
- 238000000034 method Methods 0.000 claims description 51
- 239000002245 particle Substances 0.000 claims description 17
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 238000007373 indentation Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 description 19
- 238000005219 brazing Methods 0.000 description 7
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种铜‑陶瓷基板(1),包括陶瓷载体(2)和接合到陶瓷载体(2)表面的至少一个铜层(3、4),铜层(3、4)具有至少99.5%的Cu含量,铜层(3、4)具有至少50ppm的Ag含量,以及铜层(3、4)具有最大为3000ppm的Ag含量。
Description
技术领域
本发明涉及一种具有权利要求书1的前序特征的铜-陶瓷基板。
背景技术
例如,铜-陶瓷基板(例如直接铜键合(DCB),活性金属钎焊(AMB))用于制造电子功率模块,是陶瓷载体和铜层的复合材料,铜层可以在一侧或两侧。铜层通常预制成呈铜箔形式的半成品铜制品,厚度为0.1至1.0毫米,并使用接合方法接合到陶瓷载体上。这种连接方法也被称为DCB(直接铜键合)或AMB(活性金属钎焊)。然而,在陶瓷载体强度更高的情况下,也可以应用更厚的铜层或铜箔,这在电学和热学性能方面具有根本性优势。
由例如莫来石、Al2O3、Si3N4、AlN、ZTA、ATZ、TiO2、ZrO2、MgO、CaO、CaCO3或至少两种这些材料的混合物制成的陶瓷板被用作陶瓷载体。
已知具有精细结构铜层,例如平均粒径最大为100μm的铜陶瓷基板,至少在背离陶瓷载体的自由表面上,在以下方面具有根本性优势:适于目视检查;适于线径小于50μm的细线接合的接合能力;非常精细结构的蚀刻行为;晶界配置;可镀锌性和总体上进一步加工。因此,主要是在自由表面上的精细均匀的结构在铜层中是有利的。此外,精细且因此更硬的结构对机械损伤(例如,划痕)具有更高的机械抵抗力。
DCB方法期间的过程控制发生在刚好低于铜的熔点而不是温度>1050℃时。AMB方法期间的钎焊过程发生在≥800℃的温度。AMB和DCB制造过程中的热效应使铜粗化,这种趋势随着纯度的增加而增强。因此,需要铜或铜合金对粗晶粒形成具有更高的抵抗力。
铜中有较高浓度的合金元素,即纯度降低的铜,与铜层导电性要求截然相反,而铜层导电性能需符合铜陶瓷基板最终使用的要求,至少在55MS/m的范围内。此外,铜-陶瓷基板应该可经济地制造。
发明内容
在此背景下,本发明的目的提供一种具有精细均匀的微观结构和高导电性能,并且制造成本低廉的铜-陶瓷基板。
根据本发明,提出了一种具有权利要求1特征的铜-陶瓷基板,以实现上述目的。在从属权利要求中,可以获得进一步的优选改进。
因此,提出了一种包括陶瓷载体和至少一个接合到陶瓷载体表面的铜层的铜-陶瓷基板。铜层具有至少99.5%的Cu(铜)含量。铜层还具有至少50ppm(百万分率)和最多3000ppm的Ag(银)含量。铜层可以获得其他元素的进一步分量。
在有利的实施例中,铜-陶瓷基板包括两个铜层,每个铜层都接合到陶瓷载体的表面。
此外,提出了一种有利的实施方式,其中铜层具有至少99.7%、例如99.8%的Cu(铜)含量。
在铜层或铜陶瓷基板的铜层中,可以通过所提出的分量实现细晶粒形成。在铜层中形成精细均匀的结构。可以实现最多为100μm的平均粒径,并且还能在高温处理条件下保持。
根据一个有利的实施例,建议铜层具有在40μm和100μm之间、更优选在40μm和80μm之间的平均粒径。平均粒径更优选地在40μm到60μm之间,例如50μm。平均粒径的标准差例如可以小于30μm。因此,铜层,特别是铜基板或铜层的自由表面区域,满足各种应用对精细均匀微结构的高要求。铜层因此特别适合目视检查和细线接合期间的接合能力。此外,由于精细均匀的微观结构,铜层对于非常精细的结构表现出特别好的蚀刻性能和对电镀方法的特别适用性,这特别是因为特别平坦的晶界沟槽和相关的低粗糙度。表面和结构的均匀和恒定的机械性能有助于在进一步处理操作中实现均一性能。相应的进一步处理操作例如可以是借助超声方法的线接合,其中直径例如在10至100μm范围内的接合线必须以精确的精度连接。在这种情况下,接合线接触点的结构均匀性非常重要。由于细晶粒的形成,也可以根据霍尔-佩奇关系实现铜层强度的提高。
铜层表面特别适合芯片的钎焊,特别是在芯片逐渐微型化的情况下,因为均匀精细的结构可以减少钎焊芯片区域的应力梯度,从而相比于粗糙不均匀的结构,提高了钎焊质量与焊点的使用寿命。
由于铜含量高,因此所提出的铜-陶瓷基板同时在铜层/多个铜层中提供高电导率>55MS/m。
一个特别的成本优势源于铜-陶瓷基板既可以通过活性金属钎焊(AMB)也可以通过直接铜键合(DCB)来生产的事实。特别是铜-陶瓷基板也可以采用无银焊料的AMB方式生产,其要求更高的焊料温度≥1000℃。铜-陶瓷基板也可以通过其他热接合方法制造,例如热扩散接合。因此,所提出的铜-陶瓷基板具有高抵抗粗晶形成的能力。
在此提出,铜层具有在0.4μm至0.6μm的穿透深度范围内的至少0.7GPa的穿透硬度。
进一步提出,铜层具有在0.1μm至0.25μm的压痕深度范围内的至少0.8GPa的压痕硬度。
尤其是对于低于1微米的压痕深度(这可通过深度分辨的QCSM(定量接触硬度显微镜)方法来确定)的铜层高表面硬度使得在进一步加工或运输过程中具有更高的机械作用抵抗力(例如更高的抗划伤性)。因此可以确保更高的表面质量。同样,在所指示的区域中具有相应的高表面硬度对于多种进一步的加工方法都是有利的。
根据进一步的改进,建议铜层具有最多为800ppm的Ag含量。这尤其可以导致成本降低。
进一步提出,铜层具有最多为30ppm的P含量。已经认识到,磷的存在可能抑制所提出合金的正向晶粒细化行为。这尤其适用于商业交易的铜,这些铜通常含有更多的磷。发现通过所建议的限制P含量可以有效地减少其负面影响。
还建议,铜层具有至少0.1ppm的P含量。进一步降低磷含量不会使铜层的性能进一步改善。
根据进一步的优选实施方案,建议铜层具有最多为10ppm,更优选的是最多为5ppm的O(氧)含量。相应低的氧含量可以实现足够的氢抵抗力,因此可以在氢气氛围下进行各种方法步骤。同时,低氧含量、尤其是O最大值为5ppm,对铜层的电导率有积极影响。
进一步提出,铜层具有至少0.1ppm的O含量。进一步降低氧含量不能进一步改善铜层的性能。
进一步提出,
-铜层中具有元素Cd、Ce、Ge、V、Zn的含量分别为最低0.01ppm至最高1ppm,其中:
-根据另一优选实施例的铜层具有元素Cd、Ce、Ge、V、Zn的总含量为至少0.1ppm且最多为5ppm。结果,可以简化实现高导电性和相应的精细微观结构。
进一步提出,
-铜层具有元素Bi、Se、Sn、Te元素的含量分别为最低0.01到最高2ppm,其中:
-根据另一优选实施例的铜层具有元素Bi、Se、Sn、Te的含量总共为至少0.1ppm且最多为8ppm。结果,可以简化实现高导电性和相应的精细微观结构。
进一步提出,
-铜层具有元素Al、Sb、Ti、Zr的含量分别从最低0.01ppm到最高3ppm,其中:
-根据另一优选实施例的铜层具有元素Al、Sb、Ti、Zr的含量总共为至少0.1ppm且最多为10ppm。结果,可以简化实现高导电性和相应的精细微观结构。
进一步提出,
-铜层具有元素As、Co、In、Mn、Pb、Si的含量分别从最低0.01到最高5ppm,其中:
-根据另一优选实施例的铜层具有元素As、Co、In、Mn、Pb、Si的含量总共为至少0.1ppm且最多为20ppm。结果,可以简化实现高导电性和相应的精细微观结构。
进一步提出,
-铜层具有元素B、Be、Cr、Fe、Mn、Ni、S的含量分别从最低0.01到最高10ppm,其中:
-根据另一优选实施方案的铜层具有元素B、Be、Cr、Fe、Mn、Ni、S的含量总共为至少0.1ppm且最多为50ppm。结果,可以简化实现高导电性和相应的精细微观结构。
进一步提出,铜层具有元素Cd、Ce、Ge、V、Zn、Bi、Se、Sn、Te、Al、Sb、Ti、Zr、As、Co、In、Mn、Pb、Si、B、Be、Cr、Fe、Mn、Ni和S,包括其他杂质的含量最多为50ppm。结果,可以简化实现高导电性和相应的精细微观结构。
上述含量在每种情况下指的是重量比例。
附图说明
下面参照附图用优选实施例来解释本发明。示出了:
图1为具有一层铜层的铜-陶瓷基板;
图2为具有两层铜层的铜-陶瓷基板;
图3为根据DCB工艺的铜-陶瓷基板的根据本发明的精细铜层的显微照片;
图4为根据AMB工艺的铜-陶瓷基板的根据本发明的精细铜层的显微照片;
图5为根据DCB工艺和AMB工艺的铜-陶瓷基板的根据本发明的铜层的粒径分布;
图6为与标准铜相比,根据DCB工艺和AMB工艺的铜-陶瓷基板的根据本发明的铜层的纳米硬度;以及
图7对比显示根据DCB工艺和AMB工艺的铜-陶瓷基板的根据本发明的铜层的识别为孪晶晶体区域部分的显微照片。
具体实施方式
功率模块是电力电子学的半导体元件,用作半导体开关。它们包含在一壳体内的多个与散热器电绝缘的功率半导体(芯片)。它们通过钎焊或接合被施加到电绝缘板(例如,由陶瓷材料制成)的金属化表面,以便一方面确保在基板方向的散热,另一方面确保电绝缘。金属化层和绝缘板组成的复合物称为铜-陶瓷基板1,并使用所谓的DCB技术(直接铜键合)或使用所谓的AMB技术(活性金属钎焊)以工业规模制造。
芯片通过与精细的接合线进行接合而进行接触。此外,还可以存在并集成具有不同功能的其他模块(例如,传感器、电阻器)。
为了生产DCB基板,陶瓷载体2(例如Al2O3、Si3N4、AlN、ZTA、ATZ)在键合过程中使用铜层3、4在顶部和底部相互连接。在准备这个过程中,铜层3、4可以在被放置到陶瓷载体2上之前进行表面氧化(例如,化学氧化或热氧化),然后被放置到陶瓷载体2上。这种连接(键合)是在≥1050℃的高温过程中产生的,其中在铜层3、4的表面上产生共晶熔体,所述共晶熔体与陶瓷载体2形成键合。例如,对于氧化铝(Al2O3)上的铜(Cu),此连接由薄的Cu-Al尖晶层组成。
为了生产AMB基板,铜层3、4通过合适的钎焊焊料钎焊到陶瓷载体2上。钎焊过程在真空或合适的保护气氛(例如氢气)中进行,温度>800℃。它们可以是分批过程或连续过程。使用无银焊料(例如CuAlTiSi焊料)会提高所需的工艺温度,因此这些钎焊工艺可能在高达1050℃的温度下进行。
此外,还可以使用一些方法来生产铜-陶瓷基板1,其中铜和陶瓷之间的接合是通过基于扩散的接合过程(例如热扩散接合)实现的。这里的过程温度同样≥1000℃。
图1显示了具有陶瓷载体2和所提出的铜层3的铜-陶瓷基板1的示例性实施例的示意图。铜层3具有至少99.5%的高铜含量Cu,至少50ppm的Ag且最多为3000ppm的Ag的银含量。
铜层3例如可以根据开篇所述的DCB方法或AMB方法与陶瓷载体2接合,使得铜层通过在表面边缘区5中的材料连接与陶瓷载体2接合。
图2示出了类似于图1的示例性实施例的具有陶瓷载体2的铜-陶瓷基板1的示例性实施例的示意图,其中,相比之下,提供了两个所提出的铜层3和4。铜层3和4具有至少99.5%Cu的高铜含量,其中提供至少50ppm的Ag且最多为3000ppm的Ag的银含量。
铜层3和4可以例如根据开篇描述的DCB方法或AMB方法与陶瓷载体2接合,使得它们通过各自在表面边缘区5和6中的材料连接与陶瓷载体2接合。
具有建议的Cu和Ag含量,特别是建议的最多为10ppm、更优选最多为5ppm的的O含量的铜层3和4是高导电Cu材料并且具有55MS/m,优选至少57MS/m,特别优选至少58MS/m的导电率。
添加Ag、将磷含量限制在最大30ppm以及铜层3、4中存在其他元素使得相对较小的Ag含量足以抵消因AMB方法或DCB方法中的热效应带来的铜层3、4结构中的粗化作用,从而铜-陶瓷基板1的铜层3、4具有精细均匀的结构。这特别适合蚀刻非常精细的结构。此外,精细结构导致铜层3、4的强度增加并且因此获得根据Hall-Petch关系的对机械损伤的高抵抗力。
铜层3和4的铜半成品可以具有0.1至1.0mm的厚度并且以大尺寸放置在陶瓷载体2上并且通过DCB方法接合到陶瓷载体2。然后将大面积的铜-陶瓷基板1被切割成更小的单元并进一步加工。或者,可以通过AMB法进行接合。
这些用于铜层3、4的铜半成品可以例如在排除氧气的生产方法中生产。
此外,铜层3和4可以分别具有从最小0.01到最大1ppm的元素Cd、Ce、Ge、V、Zn含量和/或分别具有从最小0.01到最大2ppm的元素Bi、Se、Sn、Te含量和/或分别具有从最小0.01到最大3ppm的元素Al、Sb、Ti、Zr含量和/或者分别具有从最小0.01到最大5ppm的元素As、Co、In、Mn、Pb、Si含量和/或分别具有从最小0.01到最大10ppm元素B、Be、Cr、Fe、Mn、Ni、S含量。所列举的附加元素可以在即将铸造之前的熔化过程中通过掺杂有意地引入微观结构中,或者基于杂质在半成品铜产品的生产过程中已经存在于铜层3和4中。在任何情况下,这些元素的含量,包括额外的杂质,优选最多为50ppm。
此外,根据另一优选实施例,铜层3、4可以具有元素Cd、Ce、Ge、V、Zn的含量总共至少为0.05ppm且最多为5ppm,元素Bi、Se、Sn、Te的含量总共为至少0.1ppm且最多为8ppm,元素Al、Sb、Ti、Zr的含量总共为至少0.1ppm且最多为10ppm,元素As、Co、In、Mn、Pb、Si的含量总共为至少0.1ppm且最多为20ppm,以及元素B、Be、Cr、Fe、Mn、Ni、S的含量总共为至少0.1ppm且最多为50ppm。
所描述的元素的定量含量可以帮助产生所提出的微观结构的平均粒径。微观结构的形成尤其是由于由元素引起的微观结构的颗粒细化以及由于在接合过程中微观结构中二次再结晶的减少而引起的。
图3显示了以DCB方法生产的铜-陶瓷基板1的铜层3、4之一的显微照片。在该示例性实施例中,铜层3、4的结构的特征在于平均粒径为56.5μm,标准偏差为28.5μm,因此小于要求的100μm平均粒径。根据线性截距法(DIN EN ISO 2624)确定粒径。
图4显示了以AMB方法生产的铜-陶瓷基板1的铜层3、4之一的显微照片。铜层3、4的结构在该示例性实施例中的特征在于平均粒径为78μm,标准偏差为34.6μm,因此小于要求的100μm平均粒径。根据线性截距法(DIN EN ISO 2624)确定粒径。
根据图3和4的两个示例性实施例的粒径分布如图5所示。在根据DCB方法和根据AMB方法生产的情况下,在铜层3、4中产生单模态粒径分布。
在图6中绘制了,在根据DCB方法(黑色圆圈)、根据AMB方法(白色圆圈)制备的铜层3、4和标准铜层(黑色方块)通过深度分辨的QCSM方法进行的纳米硬度测量中,以微米为单位的法向位移下的以GPa为单位的刻痕硬度。纳米硬度测量在多个负载水平下进行,最大测试力为100mN。Berkovich刻痕体用作压头。刻痕硬度相应地绘制为刻痕深度的函数。根据本发明的铜-陶瓷基板1的铜层3、4的表面在两种生产路径上在所有至高达3.5μm的刻痕深度上表现出比标准铜更高的刻痕硬度。已经表明,使用所提出的合金,可以实现针对铜层3、4的低刻痕深度或近表面区域的显著改进的刻痕硬度。这尤其增加了对划痕的抵抗力,并且有利于在进一步加工操作中抵抗机械力的影响。例如,小于2μm、进一步例如1μm或甚至0.5μm的近表面区域的高刻痕硬度的这些特性对于在超声焊接方法中应用非常细的接合线也是有利的。
此外,根据DCB方法以及根据AMB方法生产的根据本发明的的铜-陶瓷基板1的铜层3、4的结构的特征在于增加的孪晶形成。孪晶可以在显微照片中识别为条带,这些条带对应于在孪晶位置折转的晶粒中心区域。根据选定的生产路径,例如铜-陶瓷基板1的DCB(图7a)或AMB(图7b),微观结构可能略有不同。
孪晶形成确实是铜材料中的一种已知现象。在铜-陶瓷基板1的情况下,在热激活接合过程中观察到增强的孪晶形成。因此,在再结晶过程中也发生热孪晶形成。这是热诱导孪晶形成(退火孪晶)。孪晶形成对材料的硬度有积极影响,特别是在精细结构的情况下。
所述孪晶在图7中被涂成深色。对于对应于图7a的根据DCB方法的铜层3、4的结构,获得了19.4%的孪晶面积比例。对于对应于图7b的示例性实施例的根据AMB方法的铜层3、4,获得了21.6%的孪晶表面部分。尽管所提到的面积部分与标准铜仅略有不同,但较小的孪晶数量更多,这与数量较少的大孪晶相比在硬度增加方面具有更高的效果。
Claims (10)
1.铜-陶瓷基板(1),包括:
-陶瓷载体(2)和
-接合到陶瓷载体(2)的表面的至少一个铜层(3、4),
其特征在于,
-铜层(3、4)具有至少99.5%的Cu含量,
-铜层(3、4)具有至少50ppm的Ag含量,并且
-铜层(3、4)具有最大为3000ppm的Ag含量。
2.根据权利要求1所述的铜-陶瓷基板(1),其特征在于,铜层(3、4)具有在40μm和100μm之间的平均粒径。
3.根据权利要求2所述的铜-陶瓷基板(1),其特征在于,铜层(3、4)具有40μm到80μm之间的平均粒径。
4.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,铜层(3、4)具有在0.4μm至0.6μm的压痕深度范围内的至少0.7GPa的压痕硬度。
5.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,铜层(3、4)具有在0.1μm至0.25μm的刻痕深度范围内的至少0.8GPa的刻痕硬度。
6.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,-铜层(3、4)具有最多为30ppm的P含量。
7.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,-铜层(3、4)具有至少0.1ppm的P含量。
8.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,-铜层(3、4)具有最多为10ppm的O含量。
9.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,-铜层(3、4)具有至少0.1ppm的O含量。
10.根据前述权利要求中任一项所述的铜-陶瓷基板(1),其特征在于,铜层(3、4)具有元素Cd、Ce、Ge、V、Zn、Bi、Se、Sn、Te、Al、Sb、Ti、Zr、As、Co、In、Mn、Pb、Si、B、Be、Cr、Fe、Mn、Ni和S,包括其他杂质的含量最多为50ppm。
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US (1) | US20230399267A1 (zh) |
EP (1) | EP4237390A1 (zh) |
JP (1) | JP2023551759A (zh) |
KR (1) | KR20230098154A (zh) |
CN (1) | CN116390897A (zh) |
DE (1) | DE102020213729A1 (zh) |
WO (1) | WO2022090487A1 (zh) |
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JP2003096526A (ja) * | 2001-07-17 | 2003-04-03 | Nippon Mining & Metals Co Ltd | 銅張積層板用圧延銅箔およびその製造方法 |
CN108367994A (zh) * | 2015-12-07 | 2018-08-03 | 阿鲁比斯斯托尔伯格股份有限公司 | 铜陶瓷基板、制备铜陶瓷基板的铜半成品及制备铜陶瓷基板的方法 |
WO2019179600A1 (de) * | 2018-03-20 | 2019-09-26 | Aurubis Stolberg Gmbh & Co. Kg | Kupfer-keramik-substrat |
WO2020138283A1 (ja) * | 2018-12-28 | 2020-07-02 | デンカ株式会社 | セラミックス-銅複合体、セラミックス回路基板、パワーモジュール及びセラミックス-銅複合体の製造方法 |
WO2020162445A1 (ja) * | 2019-02-04 | 2020-08-13 | 三菱マテリアル株式会社 | 銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法、銅/セラミックス接合体、及び、絶縁回路基板 |
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JP6867102B2 (ja) * | 2014-10-22 | 2021-04-28 | Jx金属株式会社 | 銅放熱材、キャリア付銅箔、コネクタ、端子、積層体、シールド材、プリント配線板、金属加工部材、電子機器、及び、プリント配線板の製造方法 |
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2020
- 2020-11-02 DE DE102020213729.3A patent/DE102020213729A1/de active Pending
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2021
- 2021-10-29 WO PCT/EP2021/080163 patent/WO2022090487A1/de active Application Filing
- 2021-10-29 KR KR1020237012333A patent/KR20230098154A/ko unknown
- 2021-10-29 CN CN202180066263.0A patent/CN116390897A/zh active Pending
- 2021-10-29 JP JP2023518531A patent/JP2023551759A/ja active Pending
- 2021-10-29 US US18/033,573 patent/US20230399267A1/en active Pending
- 2021-10-29 EP EP21805423.7A patent/EP4237390A1/de active Pending
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CN108367994A (zh) * | 2015-12-07 | 2018-08-03 | 阿鲁比斯斯托尔伯格股份有限公司 | 铜陶瓷基板、制备铜陶瓷基板的铜半成品及制备铜陶瓷基板的方法 |
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WO2020138283A1 (ja) * | 2018-12-28 | 2020-07-02 | デンカ株式会社 | セラミックス-銅複合体、セラミックス回路基板、パワーモジュール及びセラミックス-銅複合体の製造方法 |
WO2020162445A1 (ja) * | 2019-02-04 | 2020-08-13 | 三菱マテリアル株式会社 | 銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法、銅/セラミックス接合体、及び、絶縁回路基板 |
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Also Published As
Publication number | Publication date |
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WO2022090487A1 (de) | 2022-05-05 |
EP4237390A1 (de) | 2023-09-06 |
JP2023551759A (ja) | 2023-12-13 |
DE102020213729A1 (de) | 2022-05-05 |
US20230399267A1 (en) | 2023-12-14 |
KR20230098154A (ko) | 2023-07-03 |
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