CN1110848C - 在半导体衬底中制造平面绝缘沟槽的方法 - Google Patents

在半导体衬底中制造平面绝缘沟槽的方法 Download PDF

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Publication number
CN1110848C
CN1110848C CN98805442A CN98805442A CN1110848C CN 1110848 C CN1110848 C CN 1110848C CN 98805442 A CN98805442 A CN 98805442A CN 98805442 A CN98805442 A CN 98805442A CN 1110848 C CN1110848 C CN 1110848C
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CN
China
Prior art keywords
groove
oxidation
dielectric film
polysilicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN98805442A
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English (en)
Chinese (zh)
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CN1257609A (zh
Inventor
A·K·S·瑟德贝里
N·O·厄格伦
E·H·舍丁
O·M·扎克里森
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Infineon Technologies AG
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Telefonaktiebolaget LM Ericsson AB
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Publication of CN1257609A publication Critical patent/CN1257609A/zh
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Publication of CN1110848C publication Critical patent/CN1110848C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
CN98805442A 1997-03-26 1998-03-23 在半导体衬底中制造平面绝缘沟槽的方法 Expired - Fee Related CN1110848C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE97011548 1997-03-26
SE9701154A SE520115C2 (sv) 1997-03-26 1997-03-26 Diken med plan ovansida

Publications (2)

Publication Number Publication Date
CN1257609A CN1257609A (zh) 2000-06-21
CN1110848C true CN1110848C (zh) 2003-06-04

Family

ID=20406360

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98805442A Expired - Fee Related CN1110848C (zh) 1997-03-26 1998-03-23 在半导体衬底中制造平面绝缘沟槽的方法

Country Status (9)

Country Link
EP (1) EP1018156A1 (fr)
JP (1) JP2001519097A (fr)
KR (1) KR100374455B1 (fr)
CN (1) CN1110848C (fr)
AU (1) AU6753998A (fr)
CA (1) CA2285627A1 (fr)
SE (1) SE520115C2 (fr)
TW (1) TW356579B (fr)
WO (1) WO1998043293A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
JP2008028357A (ja) * 2006-07-24 2008-02-07 Hynix Semiconductor Inc 半導体素子及びその製造方法
JP4717122B2 (ja) * 2009-01-13 2011-07-06 三菱電機株式会社 薄膜太陽電池の製造方法
CN102468176B (zh) * 2010-11-19 2013-12-18 上海华虹Nec电子有限公司 超级结器件制造纵向区的方法
CN103822735A (zh) * 2012-11-16 2014-05-28 无锡华润上华半导体有限公司 一种压力传感器用晶片结构及该晶片结构的加工方法
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching

Also Published As

Publication number Publication date
CN1257609A (zh) 2000-06-21
SE9701154D0 (sv) 1997-03-26
EP1018156A1 (fr) 2000-07-12
JP2001519097A (ja) 2001-10-16
SE9701154L (sv) 1998-09-27
KR20010005591A (ko) 2001-01-15
KR100374455B1 (ko) 2003-03-04
TW356579B (en) 1999-04-21
AU6753998A (en) 1998-10-20
CA2285627A1 (fr) 1998-10-01
WO1998043293A1 (fr) 1998-10-01
SE520115C2 (sv) 2003-05-27

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