CA2285627A1 - Procede de production des sillons plats - Google Patents

Procede de production des sillons plats Download PDF

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Publication number
CA2285627A1
CA2285627A1 CA002285627A CA2285627A CA2285627A1 CA 2285627 A1 CA2285627 A1 CA 2285627A1 CA 002285627 A CA002285627 A CA 002285627A CA 2285627 A CA2285627 A CA 2285627A CA 2285627 A1 CA2285627 A1 CA 2285627A1
Authority
CA
Canada
Prior art keywords
trench
layer
insulating
semiconductor material
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002285627A
Other languages
English (en)
Inventor
Anders Karl Sivert Soderbarg
Nils Ola Ogren
Ernst Hakan Sjodin
Olof Mikael Zackrisson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2285627A1 publication Critical patent/CA2285627A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un procédé d'amélioration de la topographie sur des structures de sillon dans lesquelles l'apport d'un matériau polysemiconducteur supplémentaire, par exemple du polysilicium 20, du nitrate ou un oxyde, dans les régions des bords de sillon, et si nécessaire, l'oxydation ultérieure du matériau supplémentaire, empêchent l'apparition de régions de tension mécanique élevée.
CA002285627A 1997-03-26 1998-03-23 Procede de production des sillons plats Abandoned CA2285627A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9701154-8 1997-03-26
SE9701154A SE520115C2 (sv) 1997-03-26 1997-03-26 Diken med plan ovansida
PCT/SE1998/000528 WO1998043293A1 (fr) 1997-03-26 1998-03-23 Procede de production des sillons plats

Publications (1)

Publication Number Publication Date
CA2285627A1 true CA2285627A1 (fr) 1998-10-01

Family

ID=20406360

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002285627A Abandoned CA2285627A1 (fr) 1997-03-26 1998-03-23 Procede de production des sillons plats

Country Status (9)

Country Link
EP (1) EP1018156A1 (fr)
JP (1) JP2001519097A (fr)
KR (1) KR100374455B1 (fr)
CN (1) CN1110848C (fr)
AU (1) AU6753998A (fr)
CA (1) CA2285627A1 (fr)
SE (1) SE520115C2 (fr)
TW (1) TW356579B (fr)
WO (1) WO1998043293A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
JP2008028357A (ja) 2006-07-24 2008-02-07 Hynix Semiconductor Inc 半導体素子及びその製造方法
JP4717122B2 (ja) * 2009-01-13 2011-07-06 三菱電機株式会社 薄膜太陽電池の製造方法
CN102468176B (zh) * 2010-11-19 2013-12-18 上海华虹Nec电子有限公司 超级结器件制造纵向区的方法
CN103822735A (zh) * 2012-11-16 2014-05-28 无锡华润上华半导体有限公司 一种压力传感器用晶片结构及该晶片结构的加工方法
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching

Also Published As

Publication number Publication date
WO1998043293A1 (fr) 1998-10-01
EP1018156A1 (fr) 2000-07-12
JP2001519097A (ja) 2001-10-16
AU6753998A (en) 1998-10-20
SE9701154L (sv) 1998-09-27
SE9701154D0 (sv) 1997-03-26
TW356579B (en) 1999-04-21
CN1257609A (zh) 2000-06-21
SE520115C2 (sv) 2003-05-27
CN1110848C (zh) 2003-06-04
KR100374455B1 (ko) 2003-03-04
KR20010005591A (ko) 2001-01-15

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Legal Events

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