TW356579B - Planar trenches - Google Patents

Planar trenches

Info

Publication number
TW356579B
TW356579B TW086105057A TW86105057A TW356579B TW 356579 B TW356579 B TW 356579B TW 086105057 A TW086105057 A TW 086105057A TW 86105057 A TW86105057 A TW 86105057A TW 356579 B TW356579 B TW 356579B
Authority
TW
Taiwan
Prior art keywords
layer
trench
isolation
plane surface
treating
Prior art date
Application number
TW086105057A
Other languages
English (en)
Inventor
Anders Karl S Soederbaerg
Nils Ola Oegren
Ernst Haakan Sjoedin
Olof Mikael Zackrisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of TW356579B publication Critical patent/TW356579B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
TW086105057A 1997-03-26 1997-04-18 Planar trenches TW356579B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9701154A SE520115C2 (sv) 1997-03-26 1997-03-26 Diken med plan ovansida

Publications (1)

Publication Number Publication Date
TW356579B true TW356579B (en) 1999-04-21

Family

ID=20406360

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086105057A TW356579B (en) 1997-03-26 1997-04-18 Planar trenches

Country Status (9)

Country Link
EP (1) EP1018156A1 (zh)
JP (1) JP2001519097A (zh)
KR (1) KR100374455B1 (zh)
CN (1) CN1110848C (zh)
AU (1) AU6753998A (zh)
CA (1) CA2285627A1 (zh)
SE (1) SE520115C2 (zh)
TW (1) TW356579B (zh)
WO (1) WO1998043293A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
JP2008028357A (ja) * 2006-07-24 2008-02-07 Hynix Semiconductor Inc 半導体素子及びその製造方法
JP4717122B2 (ja) * 2009-01-13 2011-07-06 三菱電機株式会社 薄膜太陽電池の製造方法
CN102468176B (zh) * 2010-11-19 2013-12-18 上海华虹Nec电子有限公司 超级结器件制造纵向区的方法
CN103822735A (zh) * 2012-11-16 2014-05-28 无锡华润上华半导体有限公司 一种压力传感器用晶片结构及该晶片结构的加工方法
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching

Also Published As

Publication number Publication date
CN1257609A (zh) 2000-06-21
SE9701154D0 (sv) 1997-03-26
EP1018156A1 (en) 2000-07-12
JP2001519097A (ja) 2001-10-16
SE9701154L (sv) 1998-09-27
KR20010005591A (ko) 2001-01-15
KR100374455B1 (ko) 2003-03-04
AU6753998A (en) 1998-10-20
CA2285627A1 (en) 1998-10-01
WO1998043293A1 (en) 1998-10-01
SE520115C2 (sv) 2003-05-27
CN1110848C (zh) 2003-06-04

Similar Documents

Publication Publication Date Title
AU523702B2 (en) Forming a narrow dimensioned region by reactive ion etching
EP0349070A3 (en) A method of manufacturing a semiconductor device
IL137607A0 (en) Crystal ion-slicing of single-crystal films
EP0082256A3 (en) Method of manufacturing a semiconductor device comprising dielectric isolation regions
TW328618B (en) A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby
AU7475491A (en) Etching method for obtaining at least one cavity in a substrate and substrate obtained by such method
TW356579B (en) Planar trenches
JPS54589A (en) Burying method of insulator
ATE71476T1 (de) Verfahren zur herstellung und einstellung von eingegrabenen schichten.
TW350124B (en) Manufacturing method of semiconductor devices
TW367565B (en) Integrated circuit with self-aligned isolation
MY117065A (en) Method for forming a horizontal surface spacer and devices formed thereby
WO2001050501A3 (en) Silicon corner rounding by ion implantation for shallow trench isolation
TW332915B (en) The producing method for shallow trench isolation with global planarization
WO2002041393A3 (en) Method of forming shallow trench isolation in silicon
EP0472726A4 (en) Field effect transistor
TW347576B (en) Method to produce an integrated circuit arrangement
WO2001093311A3 (en) Method of controlling well leakage for trench isolations of differing depths
TW356580B (en) Method for removing edge corners by adjustment
JPS5243370A (en) Method of forming depression in semiconductor substrate
JPS5527623A (en) Semiconductor wafer dividing method
JPS5310265A (en) Impurity diffusion method
TW338176B (en) Improved delibeation pattern for epitaxial depositions
EP1248301A3 (en) Non-volatile semiconductor storage device and method for producing the same
TW332904B (en) The structure and producing method for deep trench of semiconductor