WO2001093311A3 - Method of controlling well leakage for trench isolations of differing depths - Google Patents

Method of controlling well leakage for trench isolations of differing depths Download PDF

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Publication number
WO2001093311A3
WO2001093311A3 PCT/US2001/012360 US0112360W WO0193311A3 WO 2001093311 A3 WO2001093311 A3 WO 2001093311A3 US 0112360 W US0112360 W US 0112360W WO 0193311 A3 WO0193311 A3 WO 0193311A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
trench isolations
controlling well
differing depths
well leakage
Prior art date
Application number
PCT/US2001/012360
Other languages
French (fr)
Other versions
WO2001093311A2 (en
Inventor
H Jim Fulford
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to JP2002500431A priority Critical patent/JP2003535468A/en
Priority to EP01928571A priority patent/EP1295329A2/en
Priority to AU2001255414A priority patent/AU2001255414A1/en
Publication of WO2001093311A2 publication Critical patent/WO2001093311A2/en
Publication of WO2001093311A3 publication Critical patent/WO2001093311A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Element Separation (AREA)

Abstract

A method comprising forming a trench (22) in a semiconducting substrate (10) and forming an isolation material (24) in said trench (22). The method further comprises determining at least one of the depth of said trench (22) and the thickness of said trench isolation material (24) and determining an energy level for an ion implantation process to be performed through said isolation material (24) based upon at least one of said determined depth of said trench (22) and said determined thickness of said isolation material (24).
PCT/US2001/012360 2000-05-25 2001-04-16 Method of controlling well leakage for trench isolations of differing depths WO2001093311A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002500431A JP2003535468A (en) 2000-05-25 2001-04-16 Method of controlling well wetting current for different depth trench isolation
EP01928571A EP1295329A2 (en) 2000-05-25 2001-04-16 Method of controlling well leakage for trench isolations of differing depths
AU2001255414A AU2001255414A1 (en) 2000-05-25 2001-04-16 Method of controlling well leakage for trench isolations of differing depths

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57876000A 2000-05-25 2000-05-25
US09/578,760 2000-05-25

Publications (2)

Publication Number Publication Date
WO2001093311A2 WO2001093311A2 (en) 2001-12-06
WO2001093311A3 true WO2001093311A3 (en) 2002-04-11

Family

ID=24314194

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/012360 WO2001093311A2 (en) 2000-05-25 2001-04-16 Method of controlling well leakage for trench isolations of differing depths

Country Status (6)

Country Link
EP (1) EP1295329A2 (en)
JP (1) JP2003535468A (en)
KR (1) KR20030005391A (en)
CN (1) CN1437765A (en)
AU (1) AU2001255414A1 (en)
WO (1) WO2001093311A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3621400B2 (en) * 2003-03-03 2005-02-16 松下電器産業株式会社 Solid-state imaging device and manufacturing method thereof
CN100350588C (en) * 2003-09-25 2007-11-21 茂德科技股份有限公司 Structure of shallow ridge isolation area and dynamic DASD and its mfg method
CN101414554B (en) * 2007-10-17 2010-04-14 中芯国际集成电路制造(上海)有限公司 Ion implantation method
CN101728291B (en) * 2008-10-14 2012-03-28 中芯国际集成电路制造(上海)有限公司 Method for determining height of insulating material in shallow trench
US11854688B2 (en) * 2020-02-19 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2308733A (en) * 1995-12-27 1997-07-02 Samsung Electronics Co Ltd Growing an oxide film of a semiconductor device
US5861338A (en) * 1997-01-21 1999-01-19 Advanced Micro Devices, Inc. Channel stop implant profile shaping scheme for field isolation
WO1999008306A1 (en) * 1997-08-06 1999-02-18 Advanced Micro Devices, Inc. Semiconductor process compensation utilizing non-uniform ion implantation methodology
US5937287A (en) * 1997-07-22 1999-08-10 Micron Technology, Inc. Fabrication of semiconductor structures by ion implantation
EP0948044A1 (en) * 1998-03-25 1999-10-06 Nec Corporation Trench isolated wells in a semiconductor device
US5972728A (en) * 1997-12-05 1999-10-26 Advanced Micro Devices, Inc. Ion implantation feedback monitor using reverse process simulation tool

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2308733A (en) * 1995-12-27 1997-07-02 Samsung Electronics Co Ltd Growing an oxide film of a semiconductor device
US5861338A (en) * 1997-01-21 1999-01-19 Advanced Micro Devices, Inc. Channel stop implant profile shaping scheme for field isolation
US5937287A (en) * 1997-07-22 1999-08-10 Micron Technology, Inc. Fabrication of semiconductor structures by ion implantation
WO1999008306A1 (en) * 1997-08-06 1999-02-18 Advanced Micro Devices, Inc. Semiconductor process compensation utilizing non-uniform ion implantation methodology
US5972728A (en) * 1997-12-05 1999-10-26 Advanced Micro Devices, Inc. Ion implantation feedback monitor using reverse process simulation tool
EP0948044A1 (en) * 1998-03-25 1999-10-06 Nec Corporation Trench isolated wells in a semiconductor device

Also Published As

Publication number Publication date
KR20030005391A (en) 2003-01-17
WO2001093311A2 (en) 2001-12-06
AU2001255414A1 (en) 2001-12-11
JP2003535468A (en) 2003-11-25
CN1437765A (en) 2003-08-20
EP1295329A2 (en) 2003-03-26

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