GB2308733A - Growing an oxide film of a semiconductor device - Google Patents

Growing an oxide film of a semiconductor device Download PDF

Info

Publication number
GB2308733A
GB2308733A GB9625267A GB9625267A GB2308733A GB 2308733 A GB2308733 A GB 2308733A GB 9625267 A GB9625267 A GB 9625267A GB 9625267 A GB9625267 A GB 9625267A GB 2308733 A GB2308733 A GB 2308733A
Authority
GB
United Kingdom
Prior art keywords
oxide film
growing
thickness
time
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9625267A
Other versions
GB2308733B (en
GB9625267D0 (en
Inventor
Yong-Minjun
Jae-Man Yang
Sang-Kook Choi
Chan-Sik Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9625267D0 publication Critical patent/GB9625267D0/en
Publication of GB2308733A publication Critical patent/GB2308733A/en
Application granted granted Critical
Publication of GB2308733B publication Critical patent/GB2308733B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Description

2308733 APPARATUS A9D METHODFOR FORMING OXIDE FILM OF SEMICONDUCTOR DEVICE
is The present invention relates to an apparatus and a method of manufacturing semiconductor device, and more particularly, to an oxidizing apparatus and a method for forming an oxide film of desired thickness on a semiconductor wafer using the same.
FIG. 1 is a flowchart illustrating a method for forming an oxide film in a conventional semiconductor device. The time required for growing an oxide film corresponding to the target thickness of an oxide film to be formed on a wafer is determined in step S10 and the oxide film is grown in an oxidizing apparatus for the predetermined duration in step S11. The thickness of the oxide film grown on the wafer is measured using a measuring apparatus of oxide film thickness in step S12, and then the measured thickness is compared with the target thickness in step S13. If the target thickness has not been satisfied in step S13, the time required for growing more oxide film is calculated and steps S10-S12 are repeated until the measured thickness corresponds to the target thickness.
In the above-mentioned conventional process of forming an oxide film, due to various conditions of the oxidizing apparatus itself, the thickness of the oxide film is different in each batch. When the target thickness of the oxide film is not met, the time for growing the oxide film must be manually 1 calculated in order to grow an oxide film of desired thickness.
Also, a method of calculating the time for growing the oxide film may differ such that each calculation is not uniform, and further the results of each batch must be identified and recorded.
Summary of the Invention
Accordingly, it is an object of the present invention to provide an oxidizing apparatus for minimizing differences in oxide film thicknesses grown in a batch by the manually calculated time for growing the oxide film.
It is another object of the present invention to provide a method of forming an oxide film using the oxidizing apparatus.
To accomplish the above first object of the present invention, there is provided an apparatus for forming an oxide film of a semiconductor device, comprising: controlling means for calculating a time required for growing an oxide film of desired thickness, based on a target thickness input from an operator terminal and a measured thickness of an oxide film grown in a previous oxidation process, and outputting the required time for growing the oxide film; oxide film growing means for receiving the -required time output from the controlling means and growing an oxide film for the required time; and oxide film thickness measuring means for measuring a thickness of the oxide film grown in the oxide film growing is 2 is means and inputting the measured thickness to the controlling means.
To accomplish the above second object of the present invention, there is provided a method for forming an oxide film of a semiconductor device, comprising the steps of: a) inputting a target thickness of an oxide film to be formed into a controlling means and calculating a time required for growing an oxide film corresponding to the target thickness with the controlling means; b) inputting the time into an oxide film growing means and then growing an oxide film for the time; c) measuring the thickness of the grown oxide film in an oxide film thickness measuring means and then inputting the measured thickness into the controlling means; d) comparing the target thickness with the measured thickness and calculating the time for growing an oxide film corresponding to difference between the target thickness and the measured thickness in the controlling means; and e) inputting the time for growing an oxide film calculated in the step d) into the oxide film growing means and then repeating the steps from step b) until the target thickness corresponds to the measured thickness.
According to the apparatus of the present invention and a method of forming an oxide film using the same, the time for growing the oxide film corresponding to the target thickness of the oxide film to be grown is automatically calculated, to thereby simplify the process and minimize differences in the oxide film thicknesses. Accordingly, reliability with respect 3 to the process is enhanced and the product can be more uniformly produced.
is Brief Description of the Drawings
The above objects and advantages of the present invention will become more apparent by describing in detail a preferred embodiment thereof with reference to the attached drawings in which:
FIG. 1 is a flowchart illustrating a method for forming an oxide film in a conventional semiconductor device; FIG. 2 is a block diagram of an apparatus for forming an oxide film of a semiconductor device according to the present invention; and FIG. 3 is a flowchart illustrating a method for forming an oxide film of a semiconductor device using the apparatus of FIG. 2.
Detailed Description of the Invention
Referring to FIG. 2, reference numeral 3 refers to an oxide film growing means and reference numeral 4 refers to an oxide film thickness measuring means, respectively.
Reference numeral 5 refers to a controlling means which includes a host computer 1 for storing, comparing and calculating data and a terminal 2.
When either the target thickness of the oxide film to be grown on the wafer or the measured thickness cf the oxide film grown on the wafer is input into the host commuter 1 through 4 the terminal 2, the host computer 1 calculates either the time required for growing an oxide film for growing the target thickness or the time required for growing an oxide film corresponding to the difference between the target thickness and the measured thickness, where the target thickness is thicker than that of the measured thickness, and then outputs the calculated time to the terminal 2.
The time for growing an oxide film is determined from the stored data of oxide film growth rates obtained from repeated oxidation process in the means for growing the oxide film. The oxide film growing means 3 receives the predetermined time required for growing the desired thickness of an oxide film from the controlling means 5 and then grows the oxide film for the predetermined time. Then, the oxide film thickness measuring means 4 measures the thickness of the oxide film and the measured thickness is fed back to the host computer 1 of the controlling means 5.
Referring to FIG. 3, the time for growing an oxide film corresponding to the target thickness of the oxide film to be grown on the wafer is determined using the controlling means 5 in step S101 and the oxide film is grown in the oxide film growing means 3 for the predetermined time in step S102. Next, the oxide film thickness measuring means 4 measures the thickness of the oxide film grown on the wafer during the oxidation process in step S103 and then the controlling means compares the measured thickness with the target thickness. Here, in step S104, the controlling means 5 determines whether the target thickness has been met. If the target thickness is thicker than the measured thickness, the steps S101-S103 are repeated.
The formulas used for calculating the time for growing an oxide film stored in the controlling means are as follows:
t= (t,' R) + [ t (1-R) 2 (1.) (TOX a - T) vgr, 1 (2) G, 21 2- (TOX a g, 2 - T) (3) G2 1 R t 1 / (4) r 20 + t:l wherein t is the time reauired for next growth of oxide film, t, is the duration of growth of current batch, t2 is the duration of growth of previous batch, TOX,,,,l and TOX,,,,2 are the average thicknesses of the oxide grown during ti and t2, respectively, T is the target thickness and G. and G, are the respective growth rates of the oxide during t, and t,.
Here, TOX,....,,, and TOX,,,,- are calculated with the largest and the smallest measured values beinQ discarded. Also, when the di-,:.L"erence between the largest data and the smallest data is larcer than a Dredetermined span value, S (S = x96 of T), 6 the averages TOXa,,3,1 and TOX,,g,2 are replaced by the span value S. When the change in measured thicknesses of the oxide film is large and the time for growing the oxide film is calculated using the above formulas, process failure may occur. Thus, the operator predetermines the span value after repeated processes.
According to the oxidizing apparatus and the method of forming an oxide film of the present invention, the time for growing an oxide film corresponding to the target thickness of the oxide film to be grown is calculated automatically, using the oxidizing apparatus having an oxide film growing means, the oxide film thickness measuring means and controlling means. Accordingly, the operation is simplified and varying oxide film thicknesses in a batch are minimized, to thereby is enhance the reliability with respect to the process and produce more uniform products.
7

Claims (6)

CLAIMS:
1 2 3 4 6 7 8 9 11 12 13 14 15 1 2 3 4 5 6 7 8 9 10 1. An apparatus for forming an oxide film of a semiconductor device, comprising:
controlling means for calculating a time required for growing an oxide film of desired thickness, based on a target thickness input from an operator terminal and a measured thickness of an oxide film grown in a previous oxidation process, and outputting the required time for growing the oxide film; oxide film growing means for receiving the required time output from said controlling means and growing an oxide film for the required time; and oxide film thickness measuring means for measuring a thickness of the oxide film grown in said oxide film growing means and inputting said measured thickness to said controlling means.
2. A method for forming an oxide film of a semiconductor device, comprising the steps of:
a) inputting a target thickness of an oxide film to be formed into controlling means and calculating a time required for growing an oxide film corresponding to said target thickness with said controlling means; b) inputting the time into oxide film growing means and then growing an oxide film for the time; c) measuring the thickness of the grown oxide film in oxide film thickness measuring means and then inputting the 8 11 12 13 14 is 16 17 18 19 6 7 8 9 10 11 1 2 3 4 measured thickness into said controlling means; d) comparing said target thickness with said measured thickness and calculating the time for growing an oxide film corresponding to difference between said target thickness and said measured thickness in said controlling means; and e) inputting the time for growing an oxide film calculated in said step d) into said oxide film growing means and then repeating said steps from step b) until said target thickness corresponds to said measured thickness.
3. A method for forming an oxide film of a semiconductor device according to claim 2, wherein the time, t, required for growing said oxide f ilm can be expressed as t= (tit R) + ( t 2 ' (1-R)] wherein, (TOX avg, 1- T) t 1 t ti t 1 G 2 (TOX g, 2 - T) G 2 1 and R = t1 i t 21 +til 1 in which ti 1 and t2 p are values obtained during times t, and t2 for growing oxide films in previous stages, TOX,,,,, and TOX..,2 represent the average thicknesses of the oxide grown during the times t, and t2, respectively, T represents said target thickness and G, and G2 are the respective growth rates of the oxide during the times t. and t2.
4. A method for forming an oxide film of a semiconductor device according to claim 3, wherein an span value S determined by an operator is used in place of TOX,,,l and TOX,,,,2 when a difference between a greatest value and a 9 smallest value of data of said measured thicknesses of the 6 grown oxide film is larger than said span value S, wherein S = x515 of T.
5. An apparatus for forming an oxide film of a semiconductor device according to claim 1, substantially as herein described with reference to the accompanying drawings.
6. A method for forming an oxide film of a semiconductor device according to claim 2, substantially as herein described with reference to the accompanying drawing.
GB9625267A 1995-12-27 1996-12-04 Apparatus and method for forming oxide film of semiconductor device Expired - Lifetime GB2308733B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059505A KR0165320B1 (en) 1995-12-27 1995-12-27 Method for establishing soaktime of process semiconductor oxidation

Publications (3)

Publication Number Publication Date
GB9625267D0 GB9625267D0 (en) 1997-01-22
GB2308733A true GB2308733A (en) 1997-07-02
GB2308733B GB2308733B (en) 2000-07-05

Family

ID=19445217

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9625267A Expired - Lifetime GB2308733B (en) 1995-12-27 1996-12-04 Apparatus and method for forming oxide film of semiconductor device

Country Status (5)

Country Link
JP (1) JPH09186151A (en)
KR (1) KR0165320B1 (en)
DE (1) DE19652741B4 (en)
GB (1) GB2308733B (en)
TW (1) TW401610B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999052133A1 (en) * 1998-04-06 1999-10-14 Advanced Micro Devices, Inc. Depositing a material of controlled, variable thickness across a surface for planarization of that surface
WO2001093311A2 (en) * 2000-05-25 2001-12-06 Advanced Micro Devices, Inc. Method of controlling well leakage for trench isolations of differing depths

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607926B1 (en) * 1999-08-10 2003-08-19 Advanced Micro Devices, Inc. Method and apparatus for performing run-to-run control in a batch manufacturing environment
US6405096B1 (en) * 1999-08-10 2002-06-11 Advanced Micro Devices, Inc. Method and apparatus for run-to-run controlling of overlay registration
US6625513B1 (en) * 2000-08-15 2003-09-23 Applied Materials, Inc. Run-to-run control over semiconductor processing tool based upon mirror image target
JP3993396B2 (en) * 2001-03-30 2007-10-17 株式会社東芝 Manufacturing method of semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, [E-315], Vol 9, No 115, page 58 &JP600004223A *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999052133A1 (en) * 1998-04-06 1999-10-14 Advanced Micro Devices, Inc. Depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6184986B1 (en) 1998-04-06 2001-02-06 Advanced Micro Devices, Inc. Depositing a material of controlled, variable thickness across a surface for planarization of that surface
WO2001093311A2 (en) * 2000-05-25 2001-12-06 Advanced Micro Devices, Inc. Method of controlling well leakage for trench isolations of differing depths
WO2001093311A3 (en) * 2000-05-25 2002-04-11 Advanced Micro Devices Inc Method of controlling well leakage for trench isolations of differing depths

Also Published As

Publication number Publication date
DE19652741A1 (en) 1997-07-03
GB2308733B (en) 2000-07-05
GB9625267D0 (en) 1997-01-22
DE19652741B4 (en) 2007-07-05
TW401610B (en) 2000-08-11
KR970054573A (en) 1997-07-31
JPH09186151A (en) 1997-07-15
KR0165320B1 (en) 1999-02-01

Similar Documents

Publication Publication Date Title
US5526293A (en) System and method for controlling semiconductor wafer processing
US6460002B1 (en) Method and apparatus for data stackification for run-to-run control
US6237050B1 (en) Method for controlling components of semiconductor fabricating equipment arranged in a processing line
WO2002065511A3 (en) Method and apparatus for controlling etch selectivity
US6721605B2 (en) Multi-computer chamber control system, method and medium
US7340320B2 (en) Method of recipe control operation
GB2308733A (en) Growing an oxide film of a semiconductor device
US7660645B2 (en) Production management method and production management system
US5780317A (en) Apparatus for forming oxide film of semiconductor device
CN109733667B (en) Workpiece vacuum detection and perfusion integrated control method
US7831329B2 (en) Optimization method of deposition time and an optimization system of deposition time
JPH11145021A (en) Method and device for production control
JPH09134886A (en) Method for controlling lapping temperature of semiconductor manufacturing equipment
JP2793448B2 (en) Automatic quality control system
JP2693880B2 (en) Semiconductor device manufacturing method and film growth apparatus
JPH11170144A (en) Semiconductor production system
CN107741731B (en) Error processing method caused by S-curve calculation precision
US7117059B1 (en) Run-to-run control system and operating method of the same
KR100629256B1 (en) System for fabricating semiconductor device
JPH07142314A (en) Device for predicting time of completion of processing
JP3499770B2 (en) Sputtering condition control method, sputtering apparatus, and machine-readable recording medium storing a program for executing sputtering condition control
US20070246063A1 (en) Method of performing a pressure calibration during waferless autoclean process
JP2001135579A (en) Plasma processing system
JPH04277802A (en) Method for controlling manufacture facilities
JP2702469B2 (en) Semiconductor wafer production method